DTA143ZCA(SOT 23)

WILLAS
FM120-M+
DTA143ZCATHRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Features
• Low power loss, high efficiency.
•
•
Epoxy
meetsepitaxial
UL 94 planar
V-0 flammability
ratingjunction.
chip, metal silicon
• Silicon
parts Level
meet environmental
standards of
• Lead-free
Moisure
Sensitivity
1
Built-inMIL-STD-19500
bias resistors /228
enable the configuration of an inverter circuit
product forexternal
packing code
"G"
• RoHS
without
connecting
inputsuffix
resistors
Halogen free product for packing code suffix "H"
The bias resistors consist of thin-film resistors with complete
Mechanical
data
isolation
to allow negative
biasing of the input. They also have the
advantage
almost completely
eliminating parasitic effects.
rated flame retardant
• Epoxyof: UL94-V0
Only•the
on/off
conditions
need
to
be set for operation, making
Case : Molded plastic, SOD-123H
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.006(0.15)MIN.
•
•
•
SOT-23
.063(1.60)
.047(1.20)
•
0.146(3.7)
0.130(3.3)
current capability,
low forward voltage drop.
• Highpackage
Pb-Free
is available
• High surge capability.
RoHS
productfor
forovervoltage
packing code
suffix ”G”
protection.
• Guardring
high-speed
switching.
• Ultrafree
Halogen
product
for packing code suffix “H”
Absolute maximum
ratings
Method
2026@ 25к
.110(2.80)
For capacitive load, derate current by 20%
Electrical Characteristics
RATINGS @ 25к
.008(0.20)
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Symbol
Parameter
Min
Typ12 Max 13 Unit 14
Marking Code
15
16
18
10
115
120
VI(off)
-0.5
----V
Input voltage (VCC=-5V, IO=-100­A)
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse
Voltage
VRRM
----V
VI(on)
(VO=-0.3V, IO=-5mA)
-1.3
.004(0.10)MAX.
35
42
56
70
105
140
Maximum
RMS
Voltage
V--RMS
VO(on)
Output
voltage
=
(IO/II -5mA/-0.25mA
--- 14 -0.3 21 V 28
II
=
Input
current
(VI -5V)
----- 20 -1.8 30 mA 40
Maximum
DC
Blocking
Voltage
50
60
80
100
150
200
VDC
­A
IO(off)
Output current (VCC=
=-50V, VI 0)
-----0.5
Maximum Average Forward Rectified Current
IO
1.0
GI
DC current gain (VO=-5V,
=
IO -10mA)
80
----.020(0.50)
R1
Input resistance
3.29
4.7
6.11
K¡
Peak Forward Surge Current 8.3 ms single half sine-wave
.012(0.30)
FSM
30
I
R2/R1
Resistance ratio
8.0
10
12
superimposed on rated load (JEDEC method)
Transition frequency
fT
--250
--- MHz
40 in inches and (millimeters)
(VO=-10V,
IO=5mA,
f=100MHz)
Typical
Thermal
Resistance
(Note
2)
RΘJA
Dimensions
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
.055(1.40)
.035(0.89)
.083(2.10)
Symbol • Polarity : Indicated
Parameter
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
by cathode band
VCC
Supply voltage
---50
--V
Position : Any
VIN • Mounting
Input voltage
-30
--5.0
V
-100
IO
• Weight
:
Approximated
0.011
gram
Output current
----mA
IC(MAX)
-100
Pd
Power dissipation
--200
--mW
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Tj
Junction temperature
--150
--ć
Ratings
at
25℃
ambient
temperature
unless
otherwise
specified.
Tstg
Storage temperature
-55
--150
ć
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature Range
Suggested Solder
- 65 to
+175
Pad
Layout
TSTG
CHARACTERISTICS
.031
.800 FM180-MH FM1100-MH FM1150-MH FM1200-MH
*Marking: SYMBOL
E13 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
.035
0.85
0.9
0.92
0.5
.900
10
.079
2.000
m
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ZCATHRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
design,
excellent power dissipation offers
• Batch processON
Characteristics
INPUT VOLTAGE
VI(ON)
-10
-3
-1
-3
(mA)
(V)
-30
Mechanical data
-0.3
OFF Characteristics
SOD-123H
-10
VCC=-5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=100 ℃
-1
IO
better reverse leakage current and thermal resistance.
=-0.3V
O order to
• Low profile surface mounted applicationVin
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
=25℃
MIL-STD-19500Ta/228
• RoHS product for packing code suffix "G"
Halogen free product Tfor
packing
code suffix "H"
=100
℃
a
OUTPUT CURRENT
-100
0.071(1.8)
0.056(1.4)
-0.3
Ta=25℃
-0.1
-0.03
• Epoxy : UL94-V0 rated flame retardant
-0.1
• Case-0.3: Molded-1 plastic,-3 SOD-123H
-0.1
-10
-100
-30
,
• Terminals :Plated
terminals,
per MIL-STD-750
OUTPUT CURRENT
I solderable
(mA)
0.040(1.0)
0.024(0.6)
-0.01
-0.2
0.031(0.8)
Typ.
-0.4
O
-0.6
-0.8
INPUT VOLTAGE
VI(OFF)
-1.0
0.031(0.8)
-1.2 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
GI —— IO
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
1000
Dimensions in inches and (millimeters)
VO(ON) ——
IO
-1000
VO=-5V
IO/II=20
-300
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
10
3
Peak Forward
Surge Current 8.3 ms single half sine-wave
1
-1
-0.3
-3
superimposed on rated load (JEDEC method)
OUTPUT CURRENT
-10
IO
Typical Thermal Resistance (Note 2)
-30
(mA)
35
42
56
70
105
140
60
80
100
150
200
-0.3
1.0
-3 30
-1
OUTPUT CURRENT
40
120
TSTG
400
f=1MHz
Ta=25℃
PD
-30
-10
IO
(mA)
-100
-55 to +150
—— Ta
- 65 to +175
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
(pF)
@T A=125℃
(mW)
VF
Maximum Average Reverse Current at @T A=25℃
CO
120
200
50
-55 to +125
OUTPUT CAPACITANCE
115
150
28
TJ
Rated8 DC Blocking Voltage
18Ta=25℃ 10
80
100
40
-30
Operating Temperature Range
CO ——
Storage
Temperature Range
12
CHARACTERISTICS
16
60
30
CJ
VR
15
50
21
Typical Junction Capacitance (Note 1)
10
IR
NOTES:
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
RΘJA
Maximum Forward Voltage at 1.0A DC
13
30
-10
-0.1
-100
PD
V0
-100
FM140-MH FM150-MH FM160-MH
SYMBOL FM120-MH FM130-MH
Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
-0.1
OUTPUT VOLTAGE
RATINGS
30
Marking Code
POWER DISSIPATION
DC CURRENT GAIN
GI
(mV)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
Ratings at 25℃ ambientTtemperature
unless otherwise specified.
=100℃
a
100 phase half wave, 60Hz, resistive of inductive load.
Single
Ta=25
For capacitive load, derate current
by℃20%
2- Thermal Resistance From Junction to Ambient
4
0.50
0.70
0.92
10
250
200
0.9
0.85
0.5
300
DTA143ZCA
150
100
2
50
0
-0
2012-06
2012-0
-4
-8
-12
REVERSE BIAS VOLTAGE
-16
VR
(V)
-20
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
150
T (℃) ELECTRONIC CORP
WILLAS
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ZCATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low(2)
forward voltage drop.
• High current capability,(1)
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• HighDTA143ZCA –T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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