WILLAS FM120-M+ DTC114TCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. Features• Low power loss, high efficiency. x x Epoxy meets UL epitaxial 94 V-0 flammability rating planar chip, metal silicon junction. • Silicon Moisure Sensitivity Level 1 • Lead-free parts meet environmental standards of Built-in biasMIL-STD-19500 resistors enable /228the configuration of an inverter circuit for packing suffix "G" • RoHS product without connecting external inputcode resistors (see equivalent circuit) Halogen free product packingresistors code suffixwith "H" complete The bias resistors consist of for thin-film Mechanical isolation to allow negative data biasing of the input. They also have the advantage of almost completely eliminating parasitic effects : UL94-V0 rated flame retardant • Epoxy Only the on/off conditions need to be set for operation, making • Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 .122(3.10) 0.071(1.8) .106(2.70) 0.056(1.4) 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) 0.031(0.8) Typ. 0.031(0.8) Typ. .006(0.15)MIN. Method 2026 • Polarity : Indicated by cathode band Absolute Maximum Ratings Position : Any • Mounting Parameter Symbol Value • Weight : Approximated 0.011 gram Collector-Base Voltage V 50 0.012(0.3) Typ. Dimensions in inches and (millimeters) Unit Collector-Emitter Voltage VCEO 50 MAXIMUM RATINGS AND ELECTRICAL Emitter-Base voltage VEBO 5 at 25℃ ambient temperatureICunless otherwise Collector Ratings Current-Continuous 100specified. V V CHARACTERISTICS V mA .110(2.80) CBO .083(2.10) • • x 0.146(3.7) 0.130(3.3) Pb-Free•package iscapability, available High current low forward voltage drop. High surge capability. • RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen• free forswitching. packing code suffix “H” Ultraproduct high-speed .063(1.60) .047(1.20) • phase half wave, 60Hz, resistive Collector Single Dissipation PC of inductive load. 200 mW For capacitive load, derate current by 20% Temperature к Junction TJ 150 FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH RATINGS .008(0.20) к Storage Temperature Range TSTG -55~150 Marking Code 12 13 14 15 16 18 .003(0.08) 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Sym Maximum AverageParameter Forward Rectified Current Collector-Base Breakdown Voltage V(BR)CBO Min 50 IE=0)Current 8.3 ms single half sine-wave C=50uA, Peak (I Forward Surge VRMS 14 21 28 35 VDC 20 30 40 50 60 .004(0.10)MAX. 1.0 30 ITyp O --IFSM --- Max Unit --- V 42 56 70 105 140 80 100 150 200 .055(1.40) .035(0.89) Maximum RMS Voltage Electrical Characteristics Maximum DC Blocking Voltage Collector-Emitter Breakdown Voltage .020(0.50) 50 --V V(BR)CEOsuperimposed on rated load (JEDEC method) (IC=1mA, IB=0) .012(0.30) 40 Typical Thermal Resistance (Note 2) RΘJA Emitter-Base Breakdown Voltage 5 ----V V(BR)EBO (I =50uA, I =0) E C 120 Typical Junction Capacitance (Note 1) CJ Collector Cut-off Current Dimensions in inches and -55 to(millimeters) +150 --0.5 -55 to uA+125 ICBO Operating Temperature Range TJ--(VCB=50V, IE=0) 65 to +175 Storage Temperature Range TSTG Emitter Cut-off Current IEBO ----0.5 uA (VEB=4V, IC=0) DC Current Gain FM120-MH FM130-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS Suggested Solder 100 SYMBOL 300 600 --- FM140-MH FM150-MH hFE (VCE=5V, IC=1mA) 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 Pad Layout 0.85 Collector-Emitter Saturation Voltage ----0.3 V VCE(sat) Maximum Average Reverse Current at @T A=25℃ IB=1mA) (IC=10mA, .031 0.5 IR .800 R1 RatedInput Resistor 7 10 13 K¡ 10 @T A=125℃ DC Blocking Voltage Transition Frequency .035 --250 --MHz fT (VCE=10V, IE=-5mA, f=100MHz) .900 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .079 2.000 2- Thermal Resistance From Junction to Ambient *Marking: 04 inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114TCATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114TCATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) forward voltage drop. • High current capability,(1)low(2) DTC114TCA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.