DTC114TCA(SOT 23)

WILLAS
FM120-M+
DTC114TCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
Features• Low power loss, high efficiency.
x
x
Epoxy meets
UL epitaxial
94 V-0 flammability
rating
planar chip, metal
silicon junction.
• Silicon
Moisure Sensitivity
Level
1
• Lead-free parts meet environmental standards of
Built-in biasMIL-STD-19500
resistors enable
/228the configuration of an inverter circuit
for packing
suffix "G"
• RoHS product
without connecting
external
inputcode
resistors
(see equivalent circuit)
Halogen free
product
packingresistors
code suffixwith
"H" complete
The bias resistors
consist
of for
thin-film
Mechanical
isolation to
allow negative data
biasing of the input. They also have the
advantage
of almost
completely
eliminating
parasitic effects
: UL94-V0
rated flame
retardant
• Epoxy
Only the on/off conditions need to be set for operation, making
• Case : Molded plastic, SOD-123H
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.122(3.10) 0.071(1.8)
.106(2.70) 0.056(1.4)
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.031(0.8) Typ.
.006(0.15)MIN.
Method 2026
• Polarity : Indicated by cathode band
Absolute Maximum
Ratings
Position : Any
• Mounting
Parameter
Symbol
Value
• Weight : Approximated 0.011
gram
Collector-Base Voltage
V
50
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
Unit
Collector-Emitter Voltage
VCEO
50
MAXIMUM RATINGS AND ELECTRICAL
Emitter-Base voltage
VEBO
5
at 25℃ ambient temperatureICunless otherwise
Collector Ratings
Current-Continuous
100specified.
V
V
CHARACTERISTICS
V
mA
.110(2.80)
CBO
.083(2.10)
•
•
x
0.146(3.7)
0.130(3.3)
Pb-Free•package
iscapability,
available
High current
low forward voltage drop.
High
surge
capability.
•
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen• free
forswitching.
packing code suffix “H”
Ultraproduct
high-speed
.063(1.60)
.047(1.20)
•
phase half wave, 60Hz, resistive
Collector Single
Dissipation
PC of inductive load.
200
mW
For
capacitive
load,
derate
current
by
20%
Temperature
к
Junction
TJ
150
FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
RATINGS
.008(0.20)
к
Storage Temperature Range
TSTG
-55~150
Marking Code
12
13
14
15
16
18 .003(0.08)
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
Sym
Maximum AverageParameter
Forward Rectified Current
Collector-Base Breakdown Voltage
V(BR)CBO
Min
50
IE=0)Current 8.3 ms single half sine-wave
C=50uA,
Peak (I
Forward
Surge
VRMS
14
21
28
35
VDC
20
30
40
50
60
.004(0.10)MAX.
1.0
30
ITyp
O
--IFSM
---
Max
Unit
---
V
42
56
70
105
140
80
100
150
200
.055(1.40)
.035(0.89)
Maximum RMS Voltage
Electrical
Characteristics
Maximum
DC Blocking Voltage
Collector-Emitter Breakdown Voltage
.020(0.50)
50
--V
V(BR)CEOsuperimposed on rated load (JEDEC method)
(IC=1mA, IB=0)
.012(0.30)
40
Typical
Thermal Resistance
(Note
2)
RΘJA
Emitter-Base
Breakdown
Voltage
5
----V
V(BR)EBO
(I
=50uA,
I
=0)
E
C
120
Typical Junction Capacitance (Note 1)
CJ
Collector Cut-off Current
Dimensions
in inches
and
-55
to(millimeters)
+150
--0.5 -55 to
uA+125
ICBO Operating Temperature Range
TJ--(VCB=50V, IE=0)
65
to
+175
Storage
Temperature
Range
TSTG
Emitter
Cut-off Current
IEBO
----0.5
uA
(VEB=4V, IC=0)
DC Current Gain
FM120-MH
FM130-MH
FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
CHARACTERISTICS
Suggested
Solder
100 SYMBOL
300
600
--- FM140-MH FM150-MH
hFE
(VCE=5V, IC=1mA)
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70 Pad Layout 0.85
Collector-Emitter Saturation Voltage
----0.3
V
VCE(sat)
Maximum
Average
Reverse Current at @T A=25℃
IB=1mA)
(IC=10mA,
.031 0.5
IR
.800
R1 RatedInput
Resistor
7
10
13
K¡
10
@T A=125℃
DC Blocking Voltage
Transition Frequency
.035
--250
--MHz
fT (VCE=10V, IE=-5mA, f=100MHz)
.900
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.079
2.000
2- Thermal Resistance From Junction to Ambient
*Marking: 04
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114TCATHRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114TCATHRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability,(1)low(2)
DTC114TCA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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