WILLAS FM120-M+ DTC114YCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Pb-Free package is available • Guardring for overvoltage protection. RoHS •product for packing code suffix ”G” Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free Epitaxial Planar Die Construction MIL-STD-19500 /228 Complementary NPN Types Available • RoHS product for packing code suffix "G" Built-In Biasing Resistors Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) Epoxy meets UL 94 V-0 flammability rating Mechanical data Moisure Sensitivity Level 1 Epoxy • Marking: 64 : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .080(2.04) .070(1.78) ry Method 2026 0.031(0.8) Typ. im ina Absolute•maximum ratings @ 25к Polarity : Indicated by cathode band 0.031(0.8) Typ. Dimensions in inches and (millimeters) .110(2.80) Symbol Parameter Min Typ Max Unit Mounting Position : Any • Collector --100 IC current --mA VIN voltage -6 --+40 V • Input Weight : Approximated 0.011 gram Pd Power dissipation --200 --mW Tj Junction temperature --150 --ć MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Storage temperature -55 --150 ć Ratings at 25℃ ambient temperature unless otherwise specified. 0.040(1.0) 0.024(0.6) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Pr el Electrical Characteristics @ 25к Marking Code Symbol Parameter Min Typ Maximum Recurrent Peak Reverse Voltage VRRM 0.3 --VI(off) Input voltage (VCC=5V, IO=100A) RMS Voltage (VO=0.3V, IO=1mA) ---VRMS --VMaximum I(on) VMaximum Output voltage (IO=5mA,Ii=0.25mA) --- VDC --O(on) DC Blocking Voltage II Input current (VI=5V) ----Maximum Average Forward Rectified Current IO --I Output current (V --O(off) CC=50V, VI=0) GI DC current gain (VO=5V, IO=5mA) 68 --Peak Forward Surge Current 8.3 ms single half sine-wave R1 Input resistance 7 IFSM 10 superimposed on rated load (JEDEC method) R2/R1 Resistance ratio 3.7 4.7 Typical Thermal Resistance (Note 2) RΘJA Transition frequency --250 fT (VO =10V, IO=5mA, (Note f=100MHz) Typical Junction Capacitance 1) CJ TJ Operating Temperature Range Storage Temperature Range .008(0.20) .003(0.08) 12 Max 20 --14 1.4 20 0.3 0.88 0.5 --13 5.7 --- 13 Unit 30 V 21 V 30 V mA A 14 40 28 40 15 16 50 60 .004(0.10)MAX. 35 42 50 60 1.0 30 K¡ MHz -55 to +125 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 .020(0.50) .012(0.30) .055(1.40) .035(0.89) x .083(2.10) x x x • • 0.071(1.8) 0.056(1.4) .006(0.15)MIN. • 0.012(0.3) Typ. .122(3.10) .106(2.70) .063(1.60) .047(1.20) Features Dimensions 40 in inches and (millimeters) 120 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Suggested Solder VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 0.50 0.70 0.85 Pad Layout IR 0.92 .031 .800 10 .035 .900 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.5 .079 2.000 2- Thermal Resistance From Junction to Ambient inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114YCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTC114YCA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.071(1.8) 0.056(1.4) Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.