DTC114YCA(SOT 23)

WILLAS
FM120-M+
DTC114YCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Pb-Free
package is available
• Guardring for overvoltage protection.
RoHS •product
for packing
code suffix ”G”
Ultra high-speed
switching.
Silicon
epitaxial
planar
chip, metal
silicon
junction.
•
Halogen free product for packing
code
suffix
“H”
parts
meet environmental standards of
• Lead-free
Epitaxial
Planar Die
Construction
MIL-STD-19500 /228
Complementary
NPN Types Available
• RoHS product for packing code suffix "G"
Built-In Biasing Resistors
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
Epoxy
•
Marking:
64 : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
.070(1.78)
ry
Method 2026
0.031(0.8) Typ.
im
ina
Absolute•maximum
ratings @ 25к
Polarity : Indicated by cathode band
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.110(2.80)
Symbol
Parameter
Min
Typ
Max
Unit
Mounting
Position : Any
• Collector
--100
IC
current
--mA
VIN
voltage
-6
--+40
V
• Input
Weight
: Approximated 0.011 gram
Pd
Power dissipation
--200
--mW
Tj
Junction temperature
--150
--ć
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Tstg
Storage temperature
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
0.040(1.0)
0.024(0.6)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Pr
el
Electrical
Characteristics @ 25к
Marking Code
Symbol
Parameter
Min
Typ
Maximum Recurrent Peak Reverse Voltage
VRRM
0.3
--VI(off)
Input voltage (VCC=5V, IO=100­A)
RMS Voltage (VO=0.3V, IO=1mA)
---VRMS --VMaximum
I(on)
VMaximum
Output
voltage
(IO=5mA,Ii=0.25mA)
--- VDC --O(on)
DC Blocking
Voltage
II
Input current (VI=5V)
----Maximum Average Forward Rectified Current
IO --I
Output
current
(V
--O(off)
CC=50V, VI=0)
GI
DC current gain (VO=5V, IO=5mA)
68 --Peak
Forward Surge Current 8.3
ms single half sine-wave
R1
Input resistance
7 IFSM 10
superimposed on rated load (JEDEC method)
R2/R1
Resistance ratio
3.7
4.7
Typical Thermal
Resistance
(Note 2)
RΘJA
Transition
frequency
--250
fT
(VO =10V,
IO=5mA, (Note
f=100MHz)
Typical Junction
Capacitance
1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
.008(0.20)
.003(0.08)
12
Max
20
--14 1.4
20 0.3
0.88
0.5
--13
5.7
---
13
Unit
30
V
21 V
30 V
mA
­A
14
40
28
40
15
16
50
60
.004(0.10)MAX.
35
42
50
60
1.0
30
K¡
MHz
-55 to +125
18
80
10
100
115
150
120
200
56
70
105
140
80
100
150
200
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
x
.083(2.10)
x
x
x
•
•
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
•
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
Features
Dimensions
40 in inches and (millimeters)
120
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Suggested
Solder
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
0.50
0.70
0.85
Pad Layout
IR
0.92
.031
.800
10
.035
.900
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.5
.079
2.000
2- Thermal Resistance From Junction to Ambient
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114YCA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC114YCA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: • Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.071(1.8)
0.056(1.4)
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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