DTC123JCA(SOT 23)

WILLAS
FM120-M+
DTC123JCA THRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
Planar Die Construction
• Epitaxial
high-speed switching.
• Ultra
NPN planar
Typeschip,
Available
• Complementary
metal silicon junction.
• Silicon epitaxial
• Built-In
Biasing
Resistors
• Lead-free parts meet environmental standards of
• Pb-Free
package is available
MIL-STD-19500
/228
RoHS product for packing code suffix "G"
•
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix "H"
Halogen
free product for
packing code suffix “H”
Mechanical
data
• Epoxy meets UL 94 V-0 flammability rating
: UL94-V0
rated
• Epoxy
• Moisure
Sensitivity
Level
1 flame retardant
• Case : Molded plastic, SOD-123H
,
Terminals :Plated
terminals,
solderable per MIL-STD-750
Absolute• maximum
ratings
@ 25к
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
Features
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.006(0.15)MIN.
0.031(0.8) Typ.
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.110(2.80)
Single phase half wave, 60Hz, resistive of inductive load.
Electrical
Characteristics @ 25 20%
For capacitive load, derate current by к
Symbol
Parameter
.008(0.20)
.003(0.08)
Min
Typ
Max
Unit
SYMBOL---FM120-MH
0.5
Input voltage RATINGS
(VCC=5V, IO=100­A)
VI(off)
--- FM130-MH
V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
--1.1
VMarking
=0.3V,
I
=5mA)
(V
--I(on)
O
O
Code
12
13 V
14
15
16
18
10
115
120
VMaximum
Output
voltage
(I
=5mA,I
=0.25mA)
--0.1
0.3
O(on)
O
i
20
30 V
40
50
60
80
100
150
200
Recurrent Peak Reverse Voltage
VRRM
.004(0.10)MAX.
II
Input current (VI=5V)
----3.6
mA
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
IO(off)
Output current (VCC=50V, VI=0)
----0.5
­A
Maximum
DC
Voltage
40
50
60
80
100
150
200
GI
DC Blocking
current gain
(VO=5V, IO=10mA)
80VDC --- 20 --- 30
R
Input
resistance
1.54
2.2
2.86
K
1
¡
Maximum Average Forward Rectified Current
IO
1.0
.020(0.50)
R2/R1
Resistance ratio
17 21
26
.012(0.30)
Transition
frequency
Peak
Forward
Surge
Current
8.3
ms
single
half
sine-wave
fT
---IFSM 250
--MHz
30
(VO=10V, IO=5mA, f=100MHz)
.055(1.40)
.035(0.89)
.083(2.10)
Method
2026
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply voltage
50
--V
Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band --VIN
Input voltage
-5
--+12
V
Position : Any
• Mounting
Pd
Power dissipation
--200
--mW
Tj
Junction
temperature
--150
--• Weight : Approximated 0.011 gram
ć
Tstg
Storage temperature
-55
--150
ć
IO
100
RATINGS AND ELECTRICAL
CHARACTERISTICS
Output MAXIMUM
current
mA
IC(MAX)
100
Ratings at 25℃ ambient temperature unless otherwise specified.
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
Dimensions
40 in inches and (millimeters)
120
-55 to +150
-55 to +125
- 65 to +175 Solder
Suggested
Pad Layout
*Marking:TSTG
E42
CHARACTERISTICS
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
.031
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.9
0.85
.800
0.92
0.5
.035
.900
10
.079
2.000
NOTES:
inches
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC123JCA THRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Features
100
Typical Characteristics
Package outline
ON Characteristics
OFF Characteristics
• Batch process design, excellent power dissipation offers
10
better reverse leakage current and thermal
VOresistance.
=0.3V
optimize board space.
INPUT VOLTAGE
a
1
•
0.3
MIL-STD-19500 /228
Ta=100℃
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3
(mA)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
I0
VI(ON)
(V)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
3
• Silicon epitaxial planar chip, metal silicon junction.
standards of
• Lead-free parts meet environmental
T =25℃
OUTPUT CURRENT
30
VCC=5V
SOD-123H
• Low profile surface mounted application in order to
0.071(1.8)
0.056(1.4)
Ta=100℃
0.3
Ta=25℃
0.1
0.03
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
1
10
100
30
3
: Molded plastic,
SOD-123H
• Case 0.3
,
OUTPUT CURRENT I
(mA)
• Terminals :Plated
terminals, solderable per MIL-STD-750
0.1
0.1
0.01
0.2
0.4
0.031(0.8) Typ.
0.6
INPUT VOLTAGE
O
0.8
VI(OFF)
1.0
0.031(0.8) Typ.
(V)
Method 2026
• Polarity : Indicated
by cathode
VO(ON)
—— IOband
1000 • Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
GI
——
IO
1000
IO/II=20
VO=5V
300
100
RATINGS
Maximum Recurrent Peak Reverse Voltage
Ta=25℃
VRRM
12
20
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
30
Maximum
RMS Voltage
10
1
10 half sine-wave
30
3
Peak Forward
Surge Current
8.3 ms single
OUTPUT
CURRENT
superimposed on rated load
(JEDEC
method) IO (mA)
Storage Temperature Range
GI
30
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
0.3
1.0
3
30
1
-55 to +125
PD 10
IO
30
100
(mA)
40
120
—— Ta
-55 to +150
- 65 to +175
400
350
(mW)
IR
@T A=125℃
PD
(pF)
16
60
OUTPUT CURRENT
VF
CO
OUTPUT CAPACITANCE
15
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC
Blocking Voltage
6
3
1
0.1
Ta=25℃
Maximum Forward Voltage at 1.0A DC
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
21
TSTG
f=1MHz
CHARACTERISTICS
14
40
10
TJ
30
100
CJ
VR
10
8
Ta=25℃
13
30
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature RangeCO ——
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ta=100℃
Marking Code
Ta=100℃
POWER DISSIPATION
OUTPUT VOLTAGE
VO(ON)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DC CURRENT GAIN
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
4
2- Thermal Resistance From Junction to Ambient
2
0.50
0.70
300
0.92
0.5
10
250
200
0.9
0.85
DTC123JCA
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC123JCATHRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Product
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1)low
(2)forward voltage drop.
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• HighDTC123JCA –T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval Maximum Average Reverse Current at @T A=25℃
0.9
0.92
0.5
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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