DTC124ECA(SOT 23)

WILLAS
FM120-M+
DTC124ECA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Featuresbetter reverse leakage current and thermal resistance.
SOT-23
SOD-123H
•
•
• Case : Molded plastic, SOD-123H
Parameter
Method
2026
Supply voltage
Polarity
:
Indicated
by cathode band
Input voltage
•
Position : Any
• Mounting
Output current
Power dissipation
• Weight
: Approximated 0.011 gram
Junction temperature
StorageMAXIMUM
temperature
RATINGS AND
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
Min
---10
0.031(0.8) Typ.
Typ
Max
Unit
50
--V
Dimensions in inches and (millimeters)
--40
V
30
----mA
100
--200
--mW
ć
--150
---55
--150CHARACTERISTICS
ć
ELECTRICAL
.110(2.80)
Symbol
VCC
VIN
IO
IC(MAX)
Pd
Tj
Tstg
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
,
Absolute• maximum
ratings @ 25к
Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
.106(2.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
•
•
•
0.146(3.7)
0.130(3.3).122(3.10)
.006(0.15)MIN.
•
.063(1.60)
.047(1.20)
• Low profile surface mounted application in order to
Pb-Freeoptimize
package
is available
board space.
Low power
high efficiency.
RoHS•product
forloss,
packing
code suffix ”G”
High current capability, low forward voltage drop.
•
Halogen free product for packing code suffix “H”
High surge capability.
Epoxy•meets
UL 94 V-0 flammability rating
• Guardring for overvoltage protection.
Moisure Sensitivity Level 1
• Ultra high-speed switching.
Built-in• bias
resistors
the configuration
of an inverter circuit
Silicon
epitaxialenable
planar chip,
metal silicon junction.
without• Lead-free
connecting
external
input
resistors
parts meet environmental standards of
The biasMIL-STD-19500
resistors consist
/228of thin-film resistors with complete
isolation
to allow
negative
biasing
of the
input. They also have the
product
for packing
code suffix
"G"
• RoHS
advantage
of almost
completely
eliminating
effects.
Halogen
free product
for packing
code suffixparasitic
"H"
Only the
on/off conditions
need to be set for operation, making
Mechanical
data
device• design
easy
Epoxy : UL94-V0 rated flame retardant
.008(0.20)
.003(0.08)
Electrical
Characteristics @ 25к
.055(1.40)
.035(0.89)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Symbol
Parameter
Min
Typ
Max
Unit
Code
--- 12 --VMarking
13 V
14
15
16
18
10
115
120
0.5
Input voltage (VCC=5V, IO=100­A)
I(off)
---VRRM --- 20 3.0 30 V
VMaximum
(VReverse
I(on)
O=0.2V, IVoltage
O=5mA)
40
50
60
80
100
150
200
Recurrent Peak
.004(0.10)MAX.
VO(on)
Output voltage (I=
--0.1
0.3
V
O/II 10mA/0.5mA)
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
II =
Input current (VI 5V)
----0.36
mA
Maximum
DC
Blocking
Voltage
20
30
40
50
60
80
100
150
200
V
DC
­A
IO(off)
Output current (VCC
=
=50V, VI 0)
----0.5
G
DC
current
gain
(V
=5V,
=
I
5mA)
56
----.020(0.50)
I
O
O
Maximum Average Forward Rectified Current
IO
1.0
.012(0.30)
R1
Input resistance
15.4
22
K¡
28.6
RPeak
Resistance
ratio 8.3 ms single half sine-wave 0.8
1.0
1.2
Surge Current
2/R1 Forward
30
IFSM
Transition
superimposed
on ratedfrequency
load (JEDEC method)
fT
--250
--MHz
Dimensions in inches and (millimeters)
(VO=10V, IO=5mA, f=100MHz)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
Suggested Solder
Pad Layout
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
*Marking:
25
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
- 65 to +175
TSTG
@T A=125℃
IR
0.50
0.70
.031
.800
0.5
0.92
10
.035
.900
NOTES:
.079
2.000
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.85
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC124ECA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
ON Characteristics
excellent power dissipation offers
• Batch process design,
100
0.3
OFF Characteristics
SOD-123H
10
(mA)
3
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=100℃
I0
1
OUTPUT CURRENT
INPUT VOLTAGE
VI(ON)
(V)
better reverse leakage current and thermal resistance.
=0.2V
to
• Low profile surface mounted application inVOorder
optimize board space.
30 • Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10 • High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
3 • Silicon epitaxial planar chip, metal silicon junction.
Ta=25℃
• Lead-free parts meet environmental standards of
Ta=100℃
MIL-STD-19500 /228
1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
0.3
Ta=25℃
0.1
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0.1
: Molded plastic,
SOD-123H
• Case 0.3
0.1
1
10
100
30
3
,
• Terminals :Plated
per MIL-STD-750
OUTPUTterminals,
CURRENT I solderable
(mA)
VCC=5V
0.01
0.4
0.031(0.8)
0.8Typ.
1.2
1.6
INPUT VOLTAGE
O
VI(OFF)
0.031(0.8)
2.0 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON)
—— IO
: Any
• Mounting Position
1000
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
100
Maximum Recurrent Peak Reverse Voltage Ta=25℃
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
30
10
Peak Forward
Surge Current 8.3 ms single half sine-wave
10
3
superimposed on rated load (JEDEC method)
OUTPUT CURRENT
Typical Thermal Resistance (Note 2)
IO
(mA)
CJ
Operating Temperature Range
CO
Storage
10 Temperature Range
TJ
VR
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
0.3
1.0
30
3
1
40
120
GI
-55 to +125
10
5
OUTPUT CURRENT
IO
30
PD
100
(mA)
-55 to +150
400
VF
(pF)
CO
OUTPUT CAPACITANCE
16
60
—— Ta
- 65 to +175
350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Average Reverse Current at @T A=25℃
IR
PD
@T A=125℃
6
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
3
15
50
f=1MHz
Ta=25℃
CHARACTERISTICS
Rated DC Blocking Voltage
14
40
10
1
0.1
100
TSTG
Maximum
Forward Voltage at 1.0A DC
8
30
RΘJA
Typical Junction Capacitance (Note 1)
——
21
POWER DISSIPATION
30
13
30
(mW)
1
Ta=25℃
SYMBOL FM120-MH FM130-MH
30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ta=100℃
Marking Code
Ta=100℃
100
DC CURRENT GAIN
VO(ON)
OUTPUT VOLTAGE
300 at 25℃ ambient temperature unless otherwise specified.
Ratings
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
4
2- Thermal
Resistance From Junction to Ambient
2
0.50
0.70
0.92
10
250
200
0.9
0.85
0.5
300
DTC124ECA
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
100
125
150
T (℃)ELECTRONIC COR
WILLAS
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC124ECA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC124ECA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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