WILLAS FM120-M+ DTC143ZCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. High surge capability. • Pb-Free• package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” switching. • Ultra high-speed Silicon epitaxial planar chip,code metalsuffix silicon“H” junction. • Halogen free product for packing parts meet environmental standards of x Epitaxial• Lead-free Planar Die Construction MIL-STD-19500 /228 Available NPN Types x Complementary RoHS product for packing code suffix "G" • x Built-In Biasing Resistors Halogen free product for packing code suffix "H" • Epoxy meets UL 94 V-0 flammability rating Mechanical data • Moisure Sensitivity Level 1 • Epoxy x Marking: E23 : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .122(3.10) .106(2.70) .063(1.60) .047(1.20) Features 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. Absolute maximum ratings @ 25к Method 2026 .110(2.80) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Electrical Characteristics @ 25к .083(2.10) Symbol Parameter Typ Max Unit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Min VCC supply voltage --50 --V Mounting Position : Any •Collector IC current --100 --mA VIN Input voltage -5 --+30 V • Weight : Approximated 0.011 gram Pd Power dissipation --200 --mW Tj Junction MAXIMUM temperature RATINGS AND--150 --- CHARACTERISTICS ć ELECTRICAL Tstg Storage temperature -55 --150 ć Ratings at 25℃ ambient temperature unless otherwise specified. .008(0.20) .055(1.40) .035(0.89) FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH RATINGS .003(0.08) Symbol Parameter Min Typ Max Unit Marking Code 0.5 12 --13V 14 15 16 18 10 115 120 --VI(off) Input voltage (VCC=5V, IO=100A) --- VRRM--VI(on) 201.3 30V 40 50 60 80 100 150 200 =0.3V, IOVoltage =5mA) (VOReverse Maximum Recurrent Peak VO(on) Output voltage (I =5mA,Ii=0.25mA) ----140.3 21V 28 35 42 56 70 105 140 Maximum RMS Voltage O VRMS .004(0.10)MAX. II Input current (VI=5V) ----1.8 mA Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC IO(off) Output current (VCC=50V, VI=0) ----0.5 A G DC current gain (V =5V, I =10mA) 80 ----I O O Current Maximum Average Forward Rectified IO 1.0 R1 Input resistance 3.29 4.7 6.11 K¡ .020(0.50) Surge Current R2Peak /R1 Forward Resistance ratio 8.3 ms single half sine-wave 8 IFSM 10 12 30 .012(0.30) Transition frequency on rated load (JEDEC method) --250 --MHz fsuperimposed T (VO=10V, IO=5mA, f=100MHz) 40 Typical Thermal Resistance (Note 2) RΘJA Dimensions in inches and (millimeters) 120 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range Storage Temperature Range TJ -55 to +125 - 65 to +175 TSTG CHARACTERISTICS PIN 3 COLLECTOR Maximum Forward Voltage at 1.0A DC Suggested Solder SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH PadFM180-MH LayoutFM1100-MH FM1150-MH FM1200-MH VF (OUTPUT) PIN Maximum 1 R1Average Reverse Current at @T A=25℃ BASE @T A=125℃ Rated DC Blocking Voltage (INPUT) R2 NOTES: 2 reverse voltage of 4.0 VDC. 1- Measured at 1 MHZ and PIN applied EMITTER (GROUND) 2- Thermal Resistance From Junction to Ambient -55 to +150 SOT-23 0.50 0.70 0.85 .031 .800 0.9 0.5 IR 1. IN 0.92 10 .035 .900 .079 2.000 2. GND inches mm 3. OUT .037 .950 .037 .950 2012-06 201- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC143ZCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features design, excellent power dissipation offers • Batch processON Characteristics INPUT VOLTAGE 3 1 VCC=5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 (mA) VI(ON) 10 3 0.3 IO (V) 30 OFF Characteristics SOD-123H 10 Ta=100℃ OUTPUT CURRENT better reverse leakage current and thermal resistance. =0.3 O to • Low profile surface mounted application inVorder optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Ta=25℃ • RoHS product for packing code suffix "G" Ta=100℃ Halogen free product for packing code suffix "H" 100 0.071(1.8) 0.056(1.4) Ta=25℃ 0.1 0.03 0.01 Mechanical data 0.3 0.040(1.0) 0.024(0.6) 3E-3 • Epoxy : UL94-V0 rated flame retardant 0.1 • Case : Molded plastic, SOD-123H 0.3 3 0.1 1 10 100 30 , • Terminals :Plated terminals, solderable per MIL-STD-750 OUTPUT CURRENT I (mA) 1E-3 0.2 0.031(0.8) 0.4 Typ. 0.6 INPUT VOLTAGE O 0.031(0.8) 1.0 Typ. 0.8 VI(OFF) (V) Method 2026 • Polarity : Indicated by cathode band GI :—— Any IO • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) VO=5V VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 10 Maximum DC Blocking Voltage 3 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 1 10 3 superimposed on rated load (JEDEC method) OUTPUT CURRENT Typical Thermal Resistance (Note 2) IO 30 (mA) IO IFSM CJ Operating Temperature Range Storage Temperature Range CO TJ —— VR 16 60 18 80 Ta=100℃ 28 35 42 Ta=25 ℃ 56 40 50 60 80 0.3 1.0 30 3 1 OUTPUT CURRENT (mV) 40 120 -55 to +125 PD 10 100 115 150 120 200 70 105 140 100 150 200 30 10 IO 100 (mA) 400 VF (pF) 0.50 IR @T A=125℃ CO OUTPUT CAPACITANCE 15 50 —— Ta - 65 to +175 -55 to +150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 350 Maximum Average Reverse Current at @T A=25℃ 6 300 250 POWER DISSIPATION NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 0.1 100 f=1MHz Ta=25℃ Maximum Forward Voltage at 1.0A DC 8 Rated DC Blocking Voltage 30 30 TSTG CHARACTERISTICS 14 40 21 RΘJA Typical Junction Capacitance (Note 1) 10 13 30 (mW) 1 0.3 VO(ON) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 100 Maximum Recurrent Peak Reverse Voltage 0.1 OUTPUT VOLTAGE RATINGS 30 Marking Code IO/II=20 300 PD DC CURRENT GAIN GI Ratings at 25℃ ambient Ttemperature unless otherwise specified. =100℃ a Single 100 phase half wave, 60Hz, resistive of inductive load. Ta=25℃ For capacitive load, derate current by 20% IO MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 VO(ON) —— 1000 2- Thermal Resistance From Junction to Ambient 4 2 0.70 0.9 0.85 0.92 0.5 10 DTC143ZCA 200 150 100 50 0 0 2012-06 201- 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 100 125 150 WILLAS ELECTRONIC COR AMBIENT TEMPERATURE Ta (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC143ZCA THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1)low (2)forward voltage drop. DTC143ZCA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 201- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.