DTC144ECA(SOT 23)

WILLAS
FM120-M+
DTC144ECATHRU
NPN Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
Features
better reverse leakage current and thermal resistance.
•
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
Absolute maximum ratings @ 25к
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Symbol
VCC
VIN
IO
Pd
Tj
Tstg
•
•
•
Parameter
Method 2026
Supply voltage
Input voltage
Polarity
: Indicated by cathode band
Output current
Mounting
Position : Any
Power dissipation
Junction: Approximated
temperature
Weight
0.011 gram
Storage temperature
Min
---10
-------55
Typ
50
----200
150
---
Unit
V
V
mA
mW
ć
ć
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
Max
--40
100
----150
.122(3.10)
.106(2.70)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.110(2.80)
•
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
•
•
•
.063(1.60)
.047(1.20)
•
SOT-23
SOD-123H
Pb-Free package is available
• Low profile surface mounted application in order to
RoHS optimize
product board
for packing
space. code suffix ”G”
Low
power
loss,
efficiency.code suffix “H”
•
Halogen free producthigh
for packing
current
capability,
low forwardrating
voltage drop.
Epoxy• High
meets
UL 94
V-0 flammability
surge capability.
• High
Moisure
Sensitivity
Level 1
for overvoltage
protection.
• Guardring
Built-in
bias resistors
enable the
configuration of an inverter circuit
Ultra
high-speed
switching.
•
without connecting external input resistors
epitaxial
planar
metalresistors
silicon junction.
• Silicon
The bias
resistors
consist
ofchip,
thin-film
with complete
meet environmental
of also have the
• Lead-free
isolation
to allowparts
negative
biasing of thestandards
input. They
MIL-STD-19500 /228
advantage
of
almost
completely
eliminating
parasitic
effects.
• RoHS product for packing code suffix "G"
Only the
on/off
conditions
need
to
be
set
for
operation,
making
Halogen free product for packing code suffix "H"
device design easy
Mechanical data
.083(2.10)
Features
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.055(1.40)
.035(0.89)
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
.003(0.08)
Single phase half wave, 60Hz, resistive of inductive load.
Electrical
Characteristics @ 25к
For capacitive load, derate current by 20%
Symbol
Parameter
Min
Typ
Max
Unit
SYMBOL
FM120-MH
---FM130-MH
--V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VI(off)
0.5
Input voltageRATINGS
(VCC=5V, IO=100­A)
----- 12 3.0 13 V
VI(on) Code
(VO=0.3V, IO=2mA)
.004(0.10)MAX.
Marking
14
15
16
18
10
115
120
VO(on)
Output voltage
=
(IO/II 10mA/0.5mA)
--50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
VRRM --- 20 0.3 30 V 40
II =
Input current (VI 5V)
----0.18
mA
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
­A
IO(off)
Output current (VCC
=
=50V, VI 0)
----0.5
.020(0.50)
Maximum
DC
40
50
60
80
100
150
200
GI
DCBlocking
current Voltage
gain (VO=5V,
=
IO 5mA)
68
VDC --- 20 --- 30
.012(0.30)
K¡
R1
Input resistance
32.9
47
61.1
Maximum
Average
Forward Rectified Current
IO
1.0
Resistance ratio
0.8
1.0
1.2
R2/R1
Transition frequency
Peak
fT Forward Surge Current 8.3 ms single half sine-wave --250
--MHz
Dimensions
in inches and (millimeters)
FSM
30
I
(VO=10V, IO=5mA, f=100MHz)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
Suggested Solder
Pad Layout
*Marking:
26 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
.031
.800
0.85
0.9
0.92
0.5
.035
.900
10
.079
2.000
NOTES:
inches
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
2012-06
2012-0
.037
.950
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144ECA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
3
1
(mA)
Mechanical data
0.3
SOD-123H
VCC=5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.1
IO
(V)
VI(ON)
10
1
0.3
OUTPUT CURRENT
better reverse leakage current and thermal resistance.
V =0.3V
• Low profile surface mounted application Oin order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
metal silicon junction.
• Silicon epitaxial planar chip,
Ta=25℃
standards of
• Lead-free parts meet environmental
Ta=100℃
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
30
INPUT VOLTAGE
OFF Characteristics
ONdesign,
Characteristics
excellent power dissipation offers
• Batch process
100
Ta=100℃
0.071(1.8)
0.056(1.4)
0.03
Ta=25℃
0.01
3E-3
• Epoxy : UL94-V0 rated flame retardant
0.1
: Molded plastic,
SOD-123H
30
0.1 • Case 0.3
1
10
3
,
I solderable
(mA)
• Terminals OUTPUT
:PlatedCURRENT
terminals,
per MIL-STD-750
0.040(1.0)
0.024(0.6)
1E-3
0.0
0.4
0.031(0.8)
Typ.
O
0.8
1.2
INPUT VOLTAGE
VI(OFF)
1.6
2.0
0.031(0.8)
Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
1000
GI
IO/II=20
RATINGS
Marking Code
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
Ta=100℃
Ta=25℃
Maximum DC Blocking Voltage
Peak10Forward Surge Current 8.3 ms single half sine-wave
3
superimposed on rated load
(JEDEC
method)
OUTPUT
CURRENT
I
O
Typical Thermal Resistance (Note 2)
10
CJ
Operating Temperature Range
CO ——
Storage
Temperature Range
8
TJ
VR
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
0.3
1.0
3 30
1
OUTPUT CURRENT
40
120
GI
-55 to +125
PD
400
10
IO
30
(mA)
100
——
Ta
- 65 to +175
-55 to +150
f=1MHz
Ta=25℃
CHARACTERISTICS
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
@T A=125℃
(mW)
VF
6
Maximum Average Reverse Current at @T A=25℃
(pF)
16
60
TSTG
Maximum Forward Voltage at 1.0A DC
IR
CO
NOTES:
CAPACITANCE
15
50
1
0.1
RΘJA
4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
50
(mA)
Typical Junction Capacitance (Note 1)
Rated DC Blocking Voltage
13
30
10
30
IFSM
PD
1
Ta=25℃
100
3
POWER DISSIPATION
0.5
Ta=100℃
IO
Maximum Average Forward Rectified Current
VO=5V
30
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Recurrent Peak Reverse Voltage
30
DC CURRENT GAIN
(mV)
VO(ON)
300
Ratings
at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
100
IO
——
1000
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
OUTPUT VOLTAGE
Dimensions in inches and (millimeters)
2- Thermal Resistance From Junction to Ambient
2
0.50
300
0.70
0.9
0.85
0.92
0.5
10
250
DTC144ECA
200
150
100
50
0
0
2012-06
2012-0
5
10
REVERSE BIAS VOLTAGE
15
VR
(V)
20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144ECA THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTC144ECA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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