WILLAS FM120-M+ UMH9N THRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to • Low DIGITAL TRANSISTOR (NPN+NPN) SOT-363 optimize board space. • Low power loss, high efficiency. FEATURES • High current capability, low forward voltage drop. surge capability. • High z Two DTC114Y chips in a package • Guardring for overvoltage protection. z Transistor elements are independent, eliminating interference switching. • Ultra high-speed planar silicon junction. • Silicon epitaxial z Mounting cost and areachip, canmetal be cut in half • Lead-free parts meet environmental standards of z z z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) MARKING：H9 MIL-STD-19500 /228 for packing code suffix • RoHS product Moisture Sensitivity Level 1 "G" Halogen free product for packing code suffix "H" External circuit Pb-Free package is available Mechanical data RoHS product for packing code suffix ”G” : UL94-V0 rated flame retardant • Epoxy Halogen free product for packing code suffix “H” plastic, SOD-123H • Case : Molded • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. , 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ℃) otherwise specified. Absolute maximum Ratings at 25℃ ambientratings(Ta=25 temperature unless Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% Supply voltageRATINGS FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH FM130-MH FM140-MH50 V FM1200-MH UNIT VCC Marking Code Input voltage VIN Maximum Recurrent Peak Reverse Voltage IO 13 30 14 -6~40 15 40 50 16 60 18 80 10 100 115 V 150 21 28 35 42 56 70 30 40 10050 105 mA 140 60 80 100 150 VRMS VDC 20 Pd PowerAverage dissipation Maximum Forward Rectified Current IO IFSM Junction Peak Forwardtemperature Surge Current 8.3 ms single Tj half sine-wave superimposed on rated load (JEDEC method) Tstg Storage temperature Electrical characteristics Operating Temperature Range Storage Temperature Range Parameter (Ta=25℃) Symbol VI(off) Input voltageCHARACTERISTICS Maximum Forward Voltage at 1.0A DC VI(on) Input current NOTES: -55 to +125 Typ VF 0.50 1.4 IR @T A=125℃ ℃ Amps ℃ ℃/W PF mA 0.5 μA G 68 Input resistance R1 7 10 13 Resistance ratio R2/R1 3.7 4.7 5.7 Transition frequency fT 0.85 ,IO=1 mA 0.9 VO=0.3V 0.70 0.88 DC current gain 2013-05 Amps mW ℃ Unit - 65 to +175Conditions V IO(off) 2012-06 Volts 200 -55 to +150 0.3 Output current I 2- Thermal Resistance From Junction to Ambient Volts Volts ℃ V =5V ,I =100µA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Max. 120 200 CC O SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT O(on) II 40 120 0.3 Maximum Average Reverse CurrentVat @T A=25℃ Output voltage Rated DC Blocking Voltage -55~150 TJ TSTG Min. 1.0 30 150 CJ Typical Junction Capacitance (Note 1) 70 150(TOTAL) RΘJA Typical Thermal Resistance (Note 2) 12 20 IC(MAX) Maximum DC Blocking Voltage VRRM 14 Maximum RMScurrent Voltage Output Unit Value 0.5 10 IO/II=5mA/0.25mA 0.92 Volts mAmp VI=5V VCC=50V, VI=0 VO=5V ,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ UMH9NTHRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE ON Characteristics Pb Free Product OFF Characteristics Package outline 100 10 Features VO=0.3V • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H (V) • Low profile surface mounted application in order to (mA) a MIL-STD-19500 /228 Ta=100℃ 1 0.146(3.7) 0.130(3.3) IO OUTPUT CURRENT INPUT VOLTAGE VI(ON) optimize board space. 10 power loss, high efficiency. • Low • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. T =25℃ • Ultra high-speed switching. 1 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.012(0.3) Typ. Ta=25℃ 0.071(1.8) 0.056(1.4) 0.1 Ta=100℃ • RoHS product for packing code suffix "G" VCC=5V Halogen free product for packing code suffix "H" 0.1 Mechanical data 0.1 1 10 0.01 0.0 100 rated CURRENT flame retardant • Epoxy : UL94-V0OUTPUT I (mA) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.4 GI Method 2026 —— 0.8 INPUT VOLTAGE O 1.2 0.040(1.0) 0.024(0.6) (V) 0.031(0.8) Typ. IO VO(ON) —— IO Dimensions in inches and (millimeters) VO=5V 1.6 0.031(0.8) Typ. 1000 1000 • Polarity : Indicated by cathode band T =100℃ : Any • Mounting Position 300 • Weight : Approximated 0.011 gram VI(OFF) IO/II=20 RATINGS VO(ON) Ta=100℃ 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI T =25℃ Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 3 12 20 13 30 14 40 15 50 16 60 a 18 80 10 100 115 150 120 200 Volt Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volt 10 Maximum Average Forward Rectified Current 1 10 OUTPUT CURRENT IO (mA) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) O 6 Typical Junction Capacitance (Note 1) —— CJ TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS CO OUTPUT CAPACITANCE Maximum Average Reverse Current at @T A=25℃ NOTES: (mA) Ta ℃/W PF -55 to +150 ℃ - 65 to +175 @T A=125℃ IR 2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 ℃ 150 0.50 0.70 0.9 0.85 0.92 0.5 mAm 10 100 Volt 50 0 0 4 8 REVERSE VOLTAGE 2012-06 2013-05 2013-03 IO Amp PD40 —— 120 200 -55 to +125 f=1MHz Ta=25℃ VF Maximum Forward Voltage at 1.0A DC Amp 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI 4 Rated DC Blocking Voltage (mW) (pF) TSTG 10 OUTPUT CURRENT RΘJA VR 1.0 30 1 PD Typical Thermal Resistance (Note 2) C IO IFSM 10 100 POWER DISSIPATION OUTPUT VOLTAGE GI MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Ta=25℃ Single phase half wave, 60Hz, resistive of inductive load. 100 For capacitive load, derate current by 20% DC CURRENT GAIN (mV) a 12 VR 16 (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ UMH9NTHRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .087(2.20) .071(1.80) Halogen free product for packing code suffix "H" .054(1.35) .045(1.15) Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .030(0.75) RATINGS .021(0.55) Marking Code .010(0.25) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI .003(0.08) 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 150 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts Maximum DC Blocking Voltage .056(1.40) .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .004(0.10)MAX. Typical Junction Capacitance (Note 1) IO IFSM RΘJA CJ TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ Maximum Average Reverse Current at Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF .016(0.40) @T A=25℃ IR @T A=125℃ .004(0.10) NOTES: .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.5 0.92 Volts mAm 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2013-05 2013-03 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. UMH9N Digital transistors (built-in resistors) Ordering Information: Device PN UMH9N ‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel Packing (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-05 WILLAS ELECTRONIC CORP.