WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features SWITCHING DIODE design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to Extremely switching speed optimize boardfast space. power loss, high efficiency. • Low Low forward voltage • High current capability, low forward voltage drop. Pb-Free package is available surge capability. • High for overvoltage protection. • Guardring RoHS product for packing code suffix ”G” • Ultra high-speed switching. Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental of • Lead-free Moisture Sensitivity Levelstandards 1 Package outline SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Dimensions in inches and (millimeters) BAT54W Marking: BAT54AW Marking: KL6/B7 BAT54CW Marking: KL7/5C BAT54SW Marking: KL8/L44/B8 Position : Any • Mounting KL5/B4 • Weight : Approximated 0.011 gram Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Reverse voltage VR For capacitive load, derate current by 20% V PD VRRM 12 20 13 30 14 40 15 200 50 16 60 18 80 10 100 Maximum Voltage ThermalRMS Resistance Junction to Ambient Maximum DC Blocking Voltage VRMS Rθ 14 21 28 35 500 42 56 70 20 30 40 50 60 80 100 Tj IO T stg IFSM Storage temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Ratings @Ta=25℃ Parameter Symbol TJ Operating Temperature Range Storage Temperature Range Conditions -55 to +125 TSTG Reverse breakdown voltage IR=100uA V(BR) CHARACTERISTICS Reverse current Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IRSYMBOL VF1 VF VF2 NOTES: IR 1.0 30 CJ Typical Junction Capacitance (Note 1) -55~+125 -55~+150 RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage JA VDC Maximum Average Forward Rectified Current 30 Forward powerPeak dissipation Maximum Recurrent Reverse Voltage Operating temperature Unit SYMBOL FM1200-MH UNIT 200 FM160-MH FM180-MH FM1100-MH FM1150-MH mA IF FM120-MH FM130-MH FM140-MH FM150-MH Forward current RATINGS Marking Code Limit Min 40 120 115 120 200 Volts 105 ℃/W 140 Volts 200 Volts mW 150 150 ℃ ℃ Typ ℃/W - 65 to +175 30 0.50 = IF 0.1mA = IF 1mA 0.70 0.9 0.85 0.5 10 0.24 V 0.32 V 2- Thermal Resistance From Junction to Ambient VF4 = IF 30mA 0.5 V VF5 = IF 100mA 1 V 10 pF 5 ns 2012-06 2012-11 ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VR=25V 2 uA V trr ℃ V 0.4 Reverse recovery time PF -55Max to +150 Unit = IF 10mA CT Amp F3 1- Forward Measured atvoltage 1 MHZ and applied reverse voltage of 4.0 V VDC. Capacitance between terminals Amp = = VR 0V,f 1MHZ IF=IR=10mA,Irr=0.1*IR, RL=100Ω 0.92 Volts mAmp WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54xWTHRU FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Typical Characteristics Features better reverse leakage current and thermal resistance. Forward Characteristics mounted application in order to • Low profile surface 200 optimize board space. • Low power loss, high efficiency. 100 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. •10Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-123H 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0.1 • Terminals :Plated terminals, solderable per MIL-STD-750 200 400 600 Method 2026 FORWARD VOLTAGE VF (mV) Polarity : Indicated by cathode band REVERSE CURRENT IR a T =1 00 ℃ (uA) 0.146(3.7) 0.130(3.3) Mechanical data 0 Reverse Characteristics 100 T= a 2 5℃ FORWARD CURRENT IF (mA) • Batch process design, excellent power dissipation offers Ta=100℃ 10 0.071(1.8) 0.056(1.4) 1 Ta=25℃ 0.1 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.01 800 0 5 15 20 VR 25 30 (V) Dimensions in inches and (millimeters) RATINGS 250 (mW) Ratings at 25℃ ambient temperature unless otherwise specified. Ta=25℃ Single phase half wave, 60Hz, resistive of inductive load.f=1MHz For capacitive load, derate current by 20% 16 Marking Code VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum8DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 12 Peak Forward Surge Current 8.3 ms single half sine-wave 4 superimposed on rated load (JEDEC method) 0 5 10 Operating Temperature Range REVERSE VOLTAGE Storage Temperature Range 15 VR CJ TJ (V) TSTG 150 100 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volt 28 35 42 56 70 105 140 Volt 40 50 60 80 100 150 200 Volt 50 1.0 30 0 40 120 RΘJA Typical Thermal Resistance (Note 2) POWER DISSIPATION Maximum Recurrent Peak Reverse Voltage Typical Junction Capacitance (Note 1) 0 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN PD CAPACITANCE BETWEEN TERMINALS CT (pF) 10 Capacitance Characteristics MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSPower Derating Curve 20 0.031(0.8) Typ. REVERSE VOLTAGE • • Mounting Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 20 -55 to +1250 25 Amp 75 100 -55 to +150 AMBIENT TEMPERATURE Ta (℃) - 65 to +175 50 Amp ℃/W PF 125 ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage .047(1.20) .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM 12 20 13 30 14 40 15 50 60 80 100 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .004(0.10)MAX. Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing 0.012(0.3) Typ. • High current capability, low forward voltage drop. (1) (2) capability. • High surge Part Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.