BAT54xW(SOT 323)

WILLAS
FM120-M+
BAT54xW
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIER Diodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
SWITCHING
DIODE
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
Extremely
switching speed
optimize
boardfast
space.
power loss, high efficiency.
• Low
Low forward voltage
• High current capability, low forward voltage drop.
Pb-Free
package is available
surge capability.
• High
for overvoltage protection.
• Guardring
RoHS product for packing code suffix ”G”
• Ultra high-speed switching.
Halogen
free
product
for packing
code suffix “H”
epitaxial
planar
chip, metal
silicon junction.
• Silicon
parts
meet environmental
of
• Lead-free
Moisture
Sensitivity
Levelstandards
1
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
BAT54W Marking:
BAT54AW Marking: KL6/B7 BAT54CW Marking: KL7/5C BAT54SW Marking: KL8/L44/B8
Position : Any
• Mounting KL5/B4
• Weight : Approximated 0.011 gram
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Ratings at 25℃ ambient
temperature unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
Reverse
voltage
VR
For
capacitive
load, derate current by 20%
V
PD
VRRM
12
20
13
30
14
40
15
200
50
16
60
18
80
10
100
Maximum
Voltage
ThermalRMS
Resistance
Junction to Ambient
Maximum DC Blocking Voltage
VRMS
Rθ
14
21
28
35
500
42
56
70
20
30
40
50
60
80
100
Tj
IO
T
stg
IFSM
Storage temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Electrical Ratings @Ta=25℃
Parameter
Symbol
TJ
Operating Temperature Range
Storage Temperature Range
Conditions
-55
to +125
TSTG
Reverse breakdown voltage
IR=100uA
V(BR)
CHARACTERISTICS
Reverse current
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IRSYMBOL
VF1
VF
VF2
NOTES:
IR
1.0
30
CJ
Typical Junction Capacitance (Note 1)
-55~+125
-55~+150
RΘJA
Typical Thermal Resistance (Note 2)
Rated DC Blocking Voltage
JA
VDC
Maximum Average Forward Rectified Current
30
Forward
powerPeak
dissipation
Maximum
Recurrent
Reverse Voltage
Operating temperature
Unit
SYMBOL
FM1200-MH UNIT
200 FM160-MH FM180-MH FM1100-MH FM1150-MH
mA
IF FM120-MH FM130-MH FM140-MH FM150-MH
Forward current RATINGS
Marking Code
Limit
Min
40
120
115
120
200
Volts
105
℃/W
140
Volts
200
Volts
mW
150
150
℃
℃
Typ
℃/W
- 65 to +175
30
0.50
=
IF 0.1mA
=
IF 1mA
0.70
0.9
0.85
0.5
10
0.24
V
0.32
V
2- Thermal Resistance From Junction to Ambient
VF4
=
IF 30mA
0.5
V
VF5
=
IF 100mA
1
V
10
pF
5
ns
2012-06
2012-11
℃
FM120-MH FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH UNIT
VR=25V
2
uA
V
trr
℃
V
0.4
Reverse recovery time
PF
-55Max
to +150 Unit
=
IF 10mA
CT
Amp
F3
1- Forward
Measured atvoltage
1 MHZ and applied reverse voltage of 4.0 V
VDC.
Capacitance between terminals
Amp
=
=
VR 0V,f 1MHZ
IF=IR=10mA,Irr=0.1*IR,
RL=100Ω
0.92
Volts
mAmp
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54xWTHRU
FM1200-M+
SOT-323
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
better reverse leakage current and thermal resistance.
Forward
Characteristics
mounted
application in order to
• Low profile surface
200
optimize board space.
• Low power loss, high efficiency.
100
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
•10Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
1
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0.1
• Terminals :Plated terminals, solderable per MIL-STD-750
200
400
600
Method 2026
FORWARD VOLTAGE VF (mV)
Polarity : Indicated by cathode band
REVERSE CURRENT IR
a
T
=1
00
℃
(uA)
0.146(3.7)
0.130(3.3)
Mechanical data
0
Reverse Characteristics
100
T=
a 2
5℃
FORWARD CURRENT
IF
(mA)
• Batch process design, excellent power dissipation offers
Ta=100℃
10
0.071(1.8)
0.056(1.4)
1
Ta=25℃
0.1
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.01
800
0
5
15
20
VR
25
30
(V)
Dimensions in inches and (millimeters)
RATINGS
250
(mW)
Ratings at 25℃ ambient temperature unless otherwise specified.
Ta=25℃
Single phase half wave, 60Hz, resistive of inductive load.f=1MHz
For capacitive
load, derate current by 20%
16
Marking Code
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum8DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
12
Peak Forward Surge Current 8.3 ms single half sine-wave
4
superimposed on rated load (JEDEC method)
0
5
10
Operating Temperature Range
REVERSE VOLTAGE
Storage Temperature Range
15
VR
CJ
TJ
(V)
TSTG
150
100
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volt
28
35
42
56
70
105
140
Volt
40
50
60
80
100
150
200
Volt
50
1.0
30
0
40
120
RΘJA
Typical Thermal Resistance (Note 2)
POWER DISSIPATION
Maximum Recurrent Peak Reverse Voltage
Typical Junction
Capacitance (Note 1)
0
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
PD
CAPACITANCE BETWEEN TERMINALS
CT (pF)
10
Capacitance
Characteristics
MAXIMUM
RATINGS
AND ELECTRICAL CHARACTERISTICSPower Derating Curve
20
0.031(0.8) Typ.
REVERSE VOLTAGE
•
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
20
-55 to +1250
25
Amp
75
100
-55 to +150
AMBIENT TEMPERATURE Ta (℃)
- 65 to +175
50
Amp
℃/W
PF
125
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54xW
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.070(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.056(1.40)
Marking Code
Maximum Recurrent Peak Reverse Voltage
.047(1.20)
.010(0.25)
16 .003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
12
20
13
30
14
40
15
50
60
80
100
115
150
120
200
Volts
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Maximum RMS Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.008(0.20)
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54xW
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing 0.012(0.3) Typ.
• High current capability, low forward voltage drop.
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) Packing code, Tape & Reel Packing 0.071(1.8)
• Ultra high-speed switching.
0.056(1.4)
epitaxial planar chip, metal silicon junction.
• Silicon (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amps
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on
rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature
Range
T
J
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmps
10
@T A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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