WILLAS FM120-M+ BAS40W-0x THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SCHOTTKY BARRIER DIODE • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. z Low Forward Voltage current capability, low forward voltage drop. • High z Fast Switching surge capability. • High Guardring for overvoltage protection. • z Pb-Free package is available • Ultra high-speed switching. RoHS product forplanar packing codesilicon suffixjunction. ”G” epitaxial chip, metal • Silicon parts meet environmental of “H” • Lead-free Halogen free product for packingstandards code suffix z SOD-123H SOT-323 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Sensitivity 1 "G" for packingLevel code suffix • RoHS product Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated band MARKING: 46 BAS40W MARKING: 43 by cathode BAS40W-06 Dimensions in inches and (millimeters) BAS40W-05 MARKING：45 BAS40W-04 MARKING：44 • Mounting Position : Any • Weight : Approximated 0.011 gram Maximum Ratings @Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. VRRM Peak repetitive peak reverse voltage For capacitive load, derate current by 20% VRWM Working peak reverse voltage DC blocking Marking Code RATINGS 40 V R 12 voltage Maximum Recurrent Peak Reverse Voltage VRRM 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 35 30 40 50 PowerDC dissipation Maximum Blocking Voltage IFM PD 20 VDC Thermal resistance to ambient Maximum Average Forwardjunction Rectified Current Operating temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage temperature range IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Reverse breakdown voltage Maximum Average Reverse Current at @T A=25℃ VF IR @T A=125℃ NOTES: Reverse recovery time 2012-06 2013-08 42 56 70 80 100 15060 115 150 120 200 Volts 105 140 Volts 200 Volts mA mW 150 ℃/W TJ a125 ℃ TSTG -55~+150 ℃ 30 40 120 -55 to +125 V(BR) VF 2- Thermal Resistance From Junction to Ambient Diode capacitance 10 100 0.50 IR= 10μA = VR 30V IR Forward 1- Measured at 1voltage MHZ and applied reverse voltage of 4.0 VDC. 18 80 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ FM120-MH FM130-MH FM150-MH FM160-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL Symbol Test FM140-MH conditions Min FM180-MHMax Unit CHARACTERISTICS Parameter Maximum Forward Voltage at 1.0A DC Reverse voltage leakage current 16 60 200 ELECTRICAL (Ta=25℃ Storage TemperatureCHARACTERISTICS Range TSTG unless otherwise specified) Rated DC Blocking Voltage V 667 1.0 RθJA RΘJA Typical Thermal Resistance (Note 2) Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Forward continuous current Limit 40 0.5 10 0.85 200 IF=1mA 380 IF=40mA 1000 = = VR 0,f 1MHz CD t rr 0.70 Irr=1mA, IR=IF=10mA RL=100Ω 0.9 V 0.92 Volts mAmp nA mV 5 pF 5 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS40W-0x FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Typical Characteristics • Low profile surface mounted application in order to 0.012(0.3) Typ. Characteristics 0.071(1.8) 0.056(1.4) 10 Ta=100 ℃ /228 T= a 2 5℃ T= a 1 00 ℃ • RoHS product for packing code suffix "G" FORWARD CURRENT Reverse 100 (uA) 10 MIL-STD-19500 0.146(3.7) 0.130(3.3) REVERSE CURRENT IR IF (mA) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Forward Characteristics High surge capability. • 200 Guardring for overvoltage protection. • 100 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Halogen free product for packing code suffix "H" Mechanical data 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0.1 • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band Mounting Position : Any •0.01 0.0 0.2 0.4 0.6 • Weight : Approximated gram V FORWARD0.011 VOLTAGE F 1 0.1 0.040(1.0) 0.024(0.6) Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. 0.01 Dimensions in inches and (millimeters) 1E-3 0.8 1.0 0 10 (V) 20 30 REVERSE VOLTAGE VR 40 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS VRRM 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 12 Maximum Recurrent Peak Reverse Voltage 3 2 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 1 Storage Temperature Range 0 0 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 150 Maximum Forward VoltageREVERSE at 1.0A DCVOLTAGE 1.0 30 100 40 120 50 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ 0 5 10 CHARACTERISTICS 15 20 0 25 50 FM180-MH 75 FM1100-MH 100 FM1150-MH 125 FM1200-MH UNIT FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH SYMBOL VR VF (V) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage (mW) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Ta=25 ℃ SYMBOL FM120-MH Marking Code Power Derating Curve 200 PD 4 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Capacitance For capacitive load, derate current byCharacteristics 20% @T A=125℃ IR 0.50 AMBIENT 0.70 TEMPERATURE 0.85 Ta 0.5 (℃) 0.9 0.92 Volts 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-08 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40W-0x THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 60 80 100 115 150 120 200 Volt 35 42 56 70 105 140 Volt 50 60 80 100 150 200 Volt 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2013-08 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS40W-0x FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) capability. • High surge Part Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Packing code, Tape & Reel Packing Ultra high-speed switching. •Note: (1) epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-08 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.