BAS40W 0x(SOT 323)

WILLAS
FM120-M+
BAS40W-0x
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage
current and thermal resistance.
SCHOTTKY
BARRIER
DIODE
• Low profile surface mounted application in order to
optimize board space.
FEATURES
• Low power loss, high efficiency.
z
Low
Forward
Voltage
current capability, low forward voltage drop.
• High
z
Fast
Switching
surge capability.
• High
Guardring
for overvoltage protection.
•
z
Pb-Free package
is available
• Ultra high-speed switching.
RoHS
product
forplanar
packing
codesilicon
suffixjunction.
”G”
epitaxial
chip, metal
• Silicon
parts
meet environmental
of “H”
• Lead-free
Halogen
free
product
for packingstandards
code suffix
z
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Moisture
Sensitivity
1 "G"
for packingLevel
code suffix
• RoHS product
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity
: Indicated
band MARKING: 46
BAS40W
MARKING:
43 by cathode
BAS40W-06
Dimensions in inches
and (millimeters)
BAS40W-05 MARKING:45
BAS40W-04
MARKING:44
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
Maximum
Ratings
@Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Ratings at 25℃ ambient
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
VRRM
Peak repetitive peak reverse voltage
For capacitive load, derate current by 20%
VRWM
Working peak reverse voltage
DC blocking
Marking
Code
RATINGS
40
V
R
12
voltage
Maximum Recurrent Peak Reverse Voltage
VRRM
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
35
30
40
50
PowerDC
dissipation
Maximum
Blocking Voltage
IFM
PD
20
VDC
Thermal
resistance
to ambient
Maximum
Average
Forwardjunction
Rectified Current
Operating
temperature
Peak
Forward Surge
Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC
method)
Storage temperature
range
IO
IFSM
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Reverse
breakdown
voltage
Maximum
Average
Reverse Current
at @T A=25℃
VF
IR
@T A=125℃
NOTES:
Reverse recovery time
2012-06
2013-08
42
56
70
80
100
15060
115
150
120
200
Volts
105
140
Volts
200
Volts
mA
mW
150
℃/W
TJ
a125
℃
TSTG
-55~+150
℃
30
40
120
-55 to +125
V(BR)
VF
2- Thermal Resistance From Junction to Ambient
Diode capacitance
10
100
0.50
IR= 10μA
=
VR 30V
IR
Forward
1- Measured
at 1voltage
MHZ and applied reverse voltage of 4.0 VDC.
18
80
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
FM120-MH FM130-MH
FM150-MH FM160-MH
FM1100-MH FM1150-MH
FM1200-MH UNIT
SYMBOL
Symbol
Test FM140-MH
conditions
Min FM180-MHMax
Unit
CHARACTERISTICS
Parameter
Maximum Forward Voltage at 1.0A DC
Reverse voltage leakage current
16
60
200
ELECTRICAL
(Ta=25℃
Storage TemperatureCHARACTERISTICS
Range
TSTG unless otherwise specified)
Rated DC Blocking Voltage
V
667 1.0
RθJA
RΘJA
Typical Thermal Resistance (Note 2)
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Forward continuous current
Limit
40
0.5
10
0.85
200
IF=1mA
380
IF=40mA
1000
=
=
VR 0,f 1MHz
CD
t rr
0.70
Irr=1mA, IR=IF=10mA
RL=100Ω
0.9
V
0.92
Volts
mAmp
nA
mV
5
pF
5
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS40W-0x
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics
• Low profile surface mounted application in order to
0.012(0.3) Typ.
Characteristics
0.071(1.8)
0.056(1.4)
10
Ta=100 ℃
/228
T=
a 2
5℃
T=
a 1
00
℃
• RoHS product for packing code suffix "G"
FORWARD CURRENT
Reverse
100
(uA)
10
MIL-STD-19500
0.146(3.7)
0.130(3.3)
REVERSE CURRENT IR
IF
(mA)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Forward Characteristics
High surge capability.
• 200
Guardring for overvoltage protection.
• 100
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
Halogen free product for packing code suffix "H"
Mechanical
data
1
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0.1
• Terminals
:Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
Mounting
Position
: Any
•0.01
0.0
0.2
0.4
0.6
• Weight : Approximated
gram V
FORWARD0.011
VOLTAGE
F
1
0.1
0.040(1.0)
0.024(0.6)
Ta=25℃
0.031(0.8) Typ.
0.031(0.8) Typ.
0.01
Dimensions in inches and (millimeters)
1E-3
0.8
1.0
0
10
(V)
20
30
REVERSE VOLTAGE
VR
40
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
VRRM
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
12
Maximum Recurrent Peak Reverse Voltage
3
2
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
1
Storage Temperature Range
0
0
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
150
Maximum Forward VoltageREVERSE
at 1.0A DCVOLTAGE
1.0
30
100
40
120
50
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
0
5
10
CHARACTERISTICS
15
20
0
25
50 FM180-MH
75 FM1100-MH
100 FM1150-MH
125 FM1200-MH UNIT
FM120-MH
FM130-MH FM140-MH
FM150-MH
FM160-MH
SYMBOL
VR
VF
(V)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
(mW)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Ta=25
℃
SYMBOL
FM120-MH
Marking Code
Power Derating Curve
200
PD
4
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Capacitance
For capacitive load, derate
current byCharacteristics
20%
@T A=125℃
IR
0.50
AMBIENT
0.70 TEMPERATURE
0.85 Ta
0.5
(℃)
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-08
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40W-0x
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.070(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.056(1.40)
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
.010(0.25)
16 .003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
60
80
100
115
150
120
200
Volt
35
42
56
70
105
140
Volt
50
60
80
100
150
200
Volt
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.008(0.20)
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2013-08
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS40W-0x
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Packing code, Tape & Reel Packing Ultra high-speed
switching.
•Note: (1)
epitaxial
planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average
Forward Rectified Current
IO
1.0
Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
10
@T
A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-08
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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