WILLAS FM120-M+ THRU SCS706F-40 FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SOT-323 SchottkyFeatures Barrier Diode • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES Low profile surface mounted application in order to • z Smalloptimize package board space. power loss, z Low• Low VF and low IR high efficiency. High current capability, low forward voltage drop. • z High reliability • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring high-speed switching. • Ultra RoHS product for packing code suffix ”G” epitaxial planar chip, metal silicon junction. • Silicon Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of z SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 3 0.071(1.8) 0.056(1.4) 2 Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MAKING:Halogen 3J free product for packing code suffix "H" Mechanical data Maximum Ratings @Ta=25℃ • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Parameter Symbol , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 VRM Peak reverse voltage • Polarity : Indicated by cathode band DC reverse voltage VR Position : Any • Mounting • Weight : Approximated 0.011 gram Mean rectifying current I 0.040(1.0) 0.024(0.6) Limit 0.031(0.8) Typ. Unit 0.031(0.8) Typ. 45 V Dimensions in inches and (millimeters) 40 30 O mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 200 Surge current IFSM Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Power dissipation PD For capacitive load, derate current by 20% RATINGS Thermal Resistance from Marking Code Junction to Ambient VRRM Maximum RMS Voltage Operating temperature VRMS T j Maximum Average Forward Rectified Current Storage temperature IO Tstg Maximum DC Blocking Voltage VDC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Ratings @Ta=25℃ Operating Temperature Range 14 21 20 30 Parameter Symbol CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: Capacitance between terminals 14 40 mW 15 50 16 60 28 -55~+125 35 40 50 -55~+150 IFSM TSTG Forward voltage Maximum Forward Voltage at 1.0A DC 13 30 -55 to +125 Typ 42 56 70 80 100 Unit 115 150 ℃ 105 150 120 200 Vo 140 Vo 200 Vo ℃ Am Am ℃ P -55 to +150 Max 10 100 60 40 120 Min 18 80 1.0 30 TJ Storage Temperature Range 12 20 CJ Typical Junction Capacitance (Note 1) Reverse current Rated DC Blocking Voltage 200 RΘJA Typical Thermal Resistance (Note 2) mA FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH500 ℃/W R θJA Maximum Recurrent Peak Reverse Voltage V ℃ - 65 to +175 ℃ Conditions SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VFVF 0.50 IR I R CT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.37 1 2 I0.85 F=1mA V0.70 μA pF 0.5 10 0.9 0.92 Vo VR=10V mA VR=1V, f=1MHZ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU SCS706F-40 FM1200-M+ Pb Free Product Package outline Features Typical Characteristics • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FORWARD CURRENT (uA) Halogen free product for packing code suffix "H" Ta=25℃ • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR MIL-STD-19500 /228 1 0.146(3.7) 0.130(3.3) Characteristics 0.012(0.3) Typ. Ta=100℃ • RoHS product for packing code suffix "G" Mechanical data Reverse 10 a IF (mA) optimize board space. • Low power loss, high efficiency. Forward Characteristics 100• High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial T =100℃ planar chip, metal silicon junction. 10• Lead-free parts meet environmental standards of 0.071(1.8) 0.056(1.4) 1 0.1 0.040(1.0) 0.024(0.6) Ta=25℃ 0.01 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band 0.1 0.2 0.3 0.4 0.5 0.6 0.7 : Any • Mounting Position FORWARD VOLTAGE V (V) • Weight : Approximated 0.011 gram 0.1 0.0 0.8 0.9 1E-3 1.0 0 Dimensions in inches and (millimeters) 10 20 REVERSE VOLTAGE F 30 VR 40 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 2.5 2.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.5 1.0 15 20 REVERSE VOLTAGE VR (V) Storage Temperature Range 25TJ 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 21 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V 30 0.15 1.0 30 0.10 0.05 30 -55 to 0.00 +125 0 CHARACTERISTICS 25 50 75 ℃ 100-55 Ta to +150 125 150 (℃ ) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage A - 65 to +175 AMBIENT TEMPERATURE TSTG Maximum Forward Voltage at 1.0A DC A 40 120 CJ Typical Junction Capacitance (Note 1) 13 0.20 30 RΘJA Typical Thermal Resistance (Note 2) (W) VRRM PD Maximum Recurrent Peak Reverse Voltage 5 10 Operating0 Temperature Range 0.25 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking 3.0Code Power Derating Curve 0.30 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Capacitance Characteristics 4.0 at 25℃ ambient temperature unless otherwise specified. Ratings Ta=25℃ Single phase half wave, 60Hz, resistive of inductive load. f=1MHz For capacitive load, derate current by 20% 3.5 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS706F-40 FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) .054(1.35) .045(1.15) Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .010(0.25) 16.003(0.08) 18 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 60 80 10 100 115 150 120 200 Vo 35 42 56 70 105 140 Vo 50 60 80 100 150 200 Vo 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 10 Vo mA 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V SOD-123+ FM120-M+ THRU SCS706F-40 FM1200-M+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low (2) forward voltage drop. • High current capability, (1) SCS706F‐40‐T G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.