BAS40x(SOT 23)

WILLAS
FM120-M+
BAS40x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SCHOTTKY
BARRIER
DIODE
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z
Lowoptimize
Forward
Voltage
board
space.
Low power loss, high efficiency.
•
z
Fast Switching
• High current capability, low forward voltage drop.
z
Pb-Free
package
is available
capability.
• High surge
RoHS
productfor
forovervoltage
packing code
suffix ”G”
protection.
• Guardring
Ultra
high-speed
switching.
•
Halogen free product for packing code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
z
Moisture
Sensitivity
1
parts meetLevel
environmental
standards of
• Lead-free
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Terminals :Plated
solderable
per MIL-STD-750
BAS40• MARKING:
43 terminals,
BAS40A
MARKING:
46
BAS40C MARKING:45
0.031(0.8) Typ.
BAS40S MARKING:44
Method 2026
Maximum
Ratings
@Ta=25℃
• Polarity
: Indicated
by cathode band
• Mounting Position : Any
Parameter 0.011 gram
• Weight : Approximated
Dimensions in inches and (millimeters)
Symbol
Limit
Unit
VRRM CHARACTERISTICS
Peak repetitive
peak reverse
voltage AND ELECTRICAL
MAXIMUM
RATINGS
VRWM
40
Working
reversetemperature
voltage unless otherwise specified.
Ratings at peak
25℃ ambient
Single
phase half
wave, 60Hz, resistive of inductive load.
DC
blocking
voltage
For capacitive load, derate current by 20%
Forward continuous current
RATINGS
P12D
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Thermal resistance junction to ambient
Operating temperature
StorageAverage
temperature
Maximum
Forwardrange
Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical
Thermal Resistance
(Note 2)
ELECTRICAL
CHARACTERISTICS
Typical Junction Capacitance (Note 1)
CHARACTERISTICS
Reverse voltage
leakage current
IO
IFSM
14
21
28
35
20
30
40
50
Reverse
recovery
2- Thermal
Resistance
Fromtime
Junction to Ambient
18
80
10
100
42
56
70
60
80
100
-55~+125
-55~+150 1.0
mW
115
150
120
200
Vol
105
140
Volt
150
200
Volt
℃/W
℃
℃
Am
30
Test
-55
to +125conditions
40
120
Min
Am
℃/W
- 65 to +175
40
IR= 10μA
PF
Maxto +150 Unit
-55
℃
℃
V
FM1100-MH FM1150-MH
FM1200-MH
SYMBOLIRFM120-MHVFM130-MH
=
nA
R 30V FM140-MH FM150-MH FM160-MH FM180-MH200
VF
IR
@T A=125℃
capacitance
500
60
CJ
VF
IF=1mA
0.50
IF=40mA
=
=
VR 0,f 1MHz
CD
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-11
mA
20016
RΘJA
(Ta=25℃
unless otherwise
specified)
Maximum
Average
Reverse Current at @T A=25℃
Forward
voltage
2012-06
15
50
TSTG
V(BR)
Maximum Forward Voltage at 1.0A DC
14
40
TJ
TSTG
Reverse breakdown voltage
Diode
NOTES:
13
30
RθJA
TJ
Storage Temperature Range
20
Symbol
Parameter
Operating Temperature Range
Rated DC Blocking Voltage
200
IFM
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking
Power Code
dissipation
V
VR
t rr
Irr=1mA, IR=IF=10mA
RL=100Ω
0.70
0.85
0.5
10
380
1000
0.9
mV
5
pF
5
ns
0.92
UNI
Vol
mAm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
switching.
• Ultra high-speedForward
Characteristics
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
100
0.146(3.7)
0.130(3.3)
Typical Characteristics
Reverse
100
MIL-STD-19500 /228
REVERSE CURRENT IR
IF
Ta=100℃
Mechanical
data
10
FORWARD CURRENT
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
Ta=25℃
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.1
0.0
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Ta=25℃
0.01
V
(V)
F
Ratings at 25℃ ambient temperature unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Capacitance Characteristics
RATINGS
10
20
30
REVERSE VOLTAGE
VR
40
(V)
Power Derating Curve
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
0.25
SYMBOL FM120-MH FM130-MH FM140-MH
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
3.0
Peak Forward
2.5 Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal
Resistance (Note 2)
2.0
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
1.5
Storage Temperature Range
15
50
16
60
18
80
10
100
115
150
120
200
Volt
28
35
42
56
70
105
140
Volt
40
50
60
80
100
150
200
Volt
0.20
POWER DISSIPATION
3.5
14
40
(W)
13
30
PD
Maximum Recurrent Peak Reverse Voltage
Ta=25℃
12
f=1MHz
20
VRRM
Marking Code
CAPACITANCE BETWEEN TERMINALS
CT (pF)
0.031(0.8) Typ.
0.1
1E-3
4.0
0.040(1.0)
0.024(0.6)
1
0.2
0.4
0.6
0.8
1.0
0
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
FORWARD VOLTAGE
Ta=100℃
10
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
Characteristics
(uA)
(mA)
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
1.0
30
0.15
0.10
40
120
-55 to +125
Amp
℃/W
PF
-55 to +150
0.05
Amp
℃
- 65 to +175
TSTG
℃
1.0
0
CHARACTERISTICS
5
10
Maximum Forward Voltage at 1.0A DC
15
REVERSE VOLTAGE
20
VR
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
SYMBOL FM120-MH FM130-MH FM140-MH
0.00
(V)
VF
@T A=125℃
IR
25
30
0.50
0
25
0.70
50
75
0.85
AMBIENT TEMPERATURE
0.5
100
TJ
(℃ )
0.9
125
0.92
Volt
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIER Diodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant.106(2.70)
Mechanical data
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Marking Code
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
VRRM
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage Temperature Range
CHARACTERISTICS
100
150
21
28
35
42
20
30
40
50
60
80
VF
@T A=125℃
IR
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.008(0.20)
10
115
14
Maximum Average Reverse Current at @T A=25℃
NOTES:
18
80
100
150
120
200
Volt
140
Volt
200
Volt
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
16
60
TSTG
.004(0.10)MAX.
Rated DC Blocking Voltage
15
50
VDC
TJ
Operating Temperature Range
14
40
VRMS
CJ
Typical Junction Capacitance (Note 1)
13
30
56 .003(0.08)
70
105
RΘJA
Typical Thermal Resistance (Note 2)
12
20
0.50
0.70
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.85
0.5
0.9
0.92
Volt
10
mAm
Dimensions in inches and (millimeters)
2012-06
2012-11
WILLAS ELECTRONIC
Rev.DCORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape & Reel Packing switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
or indirectly cause injury or threaten a life without expressed written approval Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
10
@T
A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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