WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Lowoptimize Forward Voltage board space. Low power loss, high efficiency. • z Fast Switching • High current capability, low forward voltage drop. z Pb-Free package is available capability. • High surge RoHS productfor forovervoltage packing code suffix ”G” protection. • Guardring Ultra high-speed switching. • Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. z Moisture Sensitivity 1 parts meetLevel environmental standards of • Lead-free SOT-23 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Terminals :Plated solderable per MIL-STD-750 BAS40• MARKING: 43 terminals, BAS40A MARKING: 46 BAS40C MARKING：45 0.031(0.8) Typ. BAS40S MARKING：44 Method 2026 Maximum Ratings @Ta=25℃ • Polarity : Indicated by cathode band • Mounting Position : Any Parameter 0.011 gram • Weight : Approximated Dimensions in inches and (millimeters) Symbol Limit Unit VRRM CHARACTERISTICS Peak repetitive peak reverse voltage AND ELECTRICAL MAXIMUM RATINGS VRWM 40 Working reversetemperature voltage unless otherwise specified. Ratings at peak 25℃ ambient Single phase half wave, 60Hz, resistive of inductive load. DC blocking voltage For capacitive load, derate current by 20% Forward continuous current RATINGS P12D Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Thermal resistance junction to ambient Operating temperature StorageAverage temperature Maximum Forwardrange Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) ELECTRICAL CHARACTERISTICS Typical Junction Capacitance (Note 1) CHARACTERISTICS Reverse voltage leakage current IO IFSM 14 21 28 35 20 30 40 50 Reverse recovery 2- Thermal Resistance Fromtime Junction to Ambient 18 80 10 100 42 56 70 60 80 100 -55~+125 -55~+150 1.0 mW 115 150 120 200 Vol 105 140 Volt 150 200 Volt ℃/W ℃ ℃ Am 30 Test -55 to +125conditions 40 120 Min Am ℃/W - 65 to +175 40 IR= 10μA PF Maxto +150 Unit -55 ℃ ℃ V FM1100-MH FM1150-MH FM1200-MH SYMBOLIRFM120-MHVFM130-MH = nA R 30V FM140-MH FM150-MH FM160-MH FM180-MH200 VF IR @T A=125℃ capacitance 500 60 CJ VF IF=1mA 0.50 IF=40mA = = VR 0,f 1MHz CD 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-11 mA 20016 RΘJA (Ta=25℃ unless otherwise specified) Maximum Average Reverse Current at @T A=25℃ Forward voltage 2012-06 15 50 TSTG V(BR) Maximum Forward Voltage at 1.0A DC 14 40 TJ TSTG Reverse breakdown voltage Diode NOTES: 13 30 RθJA TJ Storage Temperature Range 20 Symbol Parameter Operating Temperature Range Rated DC Blocking Voltage 200 IFM SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Power Code dissipation V VR t rr Irr=1mA, IR=IF=10mA RL=100Ω 0.70 0.85 0.5 10 380 1000 0.9 mV 5 pF 5 ns 0.92 UNI Vol mAm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. switching. • Ultra high-speedForward Characteristics • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free 100 0.146(3.7) 0.130(3.3) Typical Characteristics Reverse 100 MIL-STD-19500 /228 REVERSE CURRENT IR IF Ta=100℃ Mechanical data 10 FORWARD CURRENT • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Ta=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 1 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.1 0.0 0.031(0.8) Typ. Dimensions in inches and (millimeters) Ta=25℃ 0.01 V (V) F Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Capacitance Characteristics RATINGS 10 20 30 REVERSE VOLTAGE VR 40 (V) Power Derating Curve FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI 0.25 SYMBOL FM120-MH FM130-MH FM140-MH Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 3.0 Peak Forward 2.5 Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) 2.0 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 1.5 Storage Temperature Range 15 50 16 60 18 80 10 100 115 150 120 200 Volt 28 35 42 56 70 105 140 Volt 40 50 60 80 100 150 200 Volt 0.20 POWER DISSIPATION 3.5 14 40 (W) 13 30 PD Maximum Recurrent Peak Reverse Voltage Ta=25℃ 12 f=1MHz 20 VRRM Marking Code CAPACITANCE BETWEEN TERMINALS CT (pF) 0.031(0.8) Typ. 0.1 1E-3 4.0 0.040(1.0) 0.024(0.6) 1 0.2 0.4 0.6 0.8 1.0 0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FORWARD VOLTAGE Ta=100℃ 10 Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Characteristics (uA) (mA) • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 1.0 30 0.15 0.10 40 120 -55 to +125 Amp ℃/W PF -55 to +150 0.05 Amp ℃ - 65 to +175 TSTG ℃ 1.0 0 CHARACTERISTICS 5 10 Maximum Forward Voltage at 1.0A DC 15 REVERSE VOLTAGE 20 VR Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SYMBOL FM120-MH FM130-MH FM140-MH 0.00 (V) VF @T A=125℃ IR 25 30 0.50 0 25 0.70 50 75 0.85 AMBIENT TEMPERATURE 0.5 100 TJ (℃ ) 0.9 125 0.92 Volt 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant.106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage VRRM Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 100 150 21 28 35 42 20 30 40 50 60 80 VF @T A=125℃ IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .008(0.20) 10 115 14 Maximum Average Reverse Current at @T A=25℃ NOTES: 18 80 100 150 120 200 Volt 140 Volt 200 Volt 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Forward Voltage at 1.0A DC 16 60 TSTG .004(0.10)MAX. Rated DC Blocking Voltage 15 50 VDC TJ Operating Temperature Range 14 40 VRMS CJ Typical Junction Capacitance (Note 1) 13 30 56 .003(0.08) 70 105 RΘJA Typical Thermal Resistance (Note 2) 12 20 0.50 0.70 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.85 0.5 0.9 0.92 Volt 10 mAm Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.DCORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) capability. • High surge Part Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt V RRM which may be included on WILLAS data sheets and/ or specifications can Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI or indirectly cause injury or threaten a life without expressed written approval Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.