BAS70x(SOT 23)

WILLAS
FM120-M+
BAS70xTHRU
FM1200-M+
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SWITCHING
DIODE
surface mounted application in order to
• Low profile
FEATURES
optimize board space.
power loss,
high efficiency.
• Lowturn-on
z
Low
voltage
High
current
capability,
low forward voltage drop.
•
z
Fast switching
High
surge
capability.
•
z
Also available in lead free version
for overvoltage
protection.
• Guardring
z
Pb-Free
package
is available
• Ultra high-speed switching.
RoHS product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free
product
packing code
suffix “H”
parts
meet for
environmental
standards
of
• Lead-free
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500
/228Level 1
Moisture
Sensitivity
z
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
BAS70
Marking:
73 terminals,
BAS70S
Marking:
74
BAS70C Marking: 75
• Terminals
:Plated
solderable
per MIL-STD-750
0.031(0.8) Typ.
BAS70A Marking: 76
Method 2026
• Polarity : Indicated by cathode band
MAXIMUM RATINGS @Ta=25℃
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Symbol
VR
Dimensions in inches and (millimeters)
Parameter
Value
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
DC Voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
Forward Continuous Current
IF
Single
phase half wave, 60Hz, resistive of inductive load.
Power
ForPcapacitive
load,
derateDissipation
current by 20%
D
RθJA
Marking Code
70
V
70
mA
200
mW
FM180-MH FM1100-MH
SYMBOL
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
RATINGS
℃ FM1150-MH FM1200-MH UNIT
Thermal
Resistance Junction
to Ambient
500
VRRM
12
20
13
30
14
40
15
50
VRMS
14
21
28
35
-55~+150
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
Maximum Average Forward Rectified Current
Peak Forward Surge
Current 8.3 ms single half sine-wave
Parameter
IO
Symbol
IFSM
Typical
Thermal
Resistance (Note
2)
Reverse
breakdown
voltage
RΘJA
V(BR)
TJ
Operating Temperature
Maximum Recurrent Peak Reverse Voltage
Storage
Tstg RMS Voltage
Maximum
Temperature
16
-55~+125
60
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
Operating
Temperature
Reverse
voltageRange
leakag e
Storage Temperature Range
CHARACTERISTICS
Diode cap acitance
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Reveres recovery time
-55 to +125
10
℃
100
56
70℃
80
100
4070
120
IR= 10µA
- 65 to +175
115
150
120
200
Volts
105
140
Volts
150
200
Volts
Amp
Max
-55 to +150
TSTG
Forward voltage
18
80
1.0
Min
30
Test conditions
TJ I
VR 50V
current =
R
Maximum Forward Voltage at 1.0A DC
Unit
120
Unit
Amp
V
℃/W
nA
℃
PF
410
IF=1mA
mV
VF
1000
I
=15mA
SYMBOL FM120-MH FFM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF C
D
@T A=125℃
NOTES:
IR
trr
VR= 0V 0.50
f= 1MHz
IF=IR=10mA,Irr=0.1xIR,
RL=100Ω
0.70
0.5
10
0.852
0.9
5
ns
pF
0.92
℃
UNIT
Volts
mAmp
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS70x THRU
FM1200-M+
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Typical Characteristics
(uA)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
• 0.1
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.4
0.6
0.8
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
REVERSE CURRENT IR
C
o
Halogen free product for packing code suffix "H"
0.2
0.130(3.3)
Ta=100 C
o
=1
00
a
T
T=
a 2
5
IF
FORWARD CURRENT
MIL-STD-19500 /228
0.01
0.0
Characteristics
0.146(3.7)
o
1
product for packing code suffix "G"
• RoHS
• Polarity : Indicated by cathode band
FORWARD VOLTAGE VF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
SOD-123H
Reverse
10
C
(mA)
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Forward Characteristics
Low power loss, high efficiency.
•100
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
Ultra high-speed switching.
• 10
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
1
0.1
0.031(0.8) Typ.
0.01
1.0
0.040(1.0)
0.024(0.6)
o
Ta=25 C
0
10
0.031(0.8) Typ.
20
30
40
50
Dimensions in inches and (millimeters)
(V)
REVERSE VOLTAGE
VR
60
70
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mW)
250
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
3
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC
2 Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
1 on rated load (JEDEC method)
superimposed
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
0
0
5
Storage Temperature
Range
10
REVERSE VOLTAGE
CHARACTERISTICS
15TSTG
VR
200
150
14
40
15
50
16
60
120
200
Vol
28
35
42
56
70
105
140
50
60
80
100
150
200
Volt
1.0
30
40
120
50
(V)
115
150
40
100
0
10
100
Volt
-55 to +125
20
18
80
Am
75
100
65 to +175
AMBIENT TEMPERATURE Ta
25
℃/W
PF
-55 to +150
0
Am
50-
℃
125
150
℃
(℃)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
RΘJA
Typical Thermal Resistance (Note 2)
POWER DISSIPATION
Power Derating Curve
300
PD
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ratings at 25℃ ambient
temperature
unless otherwise specified.
Capacitance
Characteristics
4
Single phase half wave, 60Hz, resistive of inductive load. T =25℃
a
For capacitive load, derate current by 20%
f=1MHz
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vol
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS70x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOD-123H
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant.106(2.70)
Mechanical data
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
.080(2.04)
.070(1.78)
12
20
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IR
NOTES:
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
15
50
16
60
18
80
2- Thermal Resistance From Junction to Ambient
.008(0.20)
10
115
100
150
.003(0.08)
70
105
100
150
120
200
Volt
140
Volt
200
Volt
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
14
40
TSTG
.004(0.10)MAX.
13
30
0.50
0.70
0.85
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.9
0.92
Volt
10
mAm
Dimensions in inches and (millimeters)
2012-06
2012-11
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS70x THRU
FM1200-M+
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(1) (2)
capability.
• High surge
Part Number ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Vol
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Vol
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Vol
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed
on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature
Range
T
J
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
or indirectly cause injury or threaten a life without expressed written approval Vol
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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