WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ SCS425DS THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SCHOTTKY BARRIER DIODE SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. FEATURES • Guardring for overvoltage protection. high-speed switching. • Ultra Small Surface Mounting Type • Silicon epitaxial planar chip, metal silicon junction. Low •VLead-free F parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 High Reliability • RoHS product for packing code suffix "G" Pb-Free package is available Halogen free product for packing code suffix "H" Mechanical datacode suffix ”G” RoHS product for packing flame retardant • Epoxy Halogen free: UL94-V0 productrated for packing code suffix “H” 0.040(1.0) 0.024(0.6) : Molded plastic, SOD-123H • CaseSensitivity Moisture Level 1 • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. , APPLICATIONS Method 2026 PolarityRectification : Indicated by cathode band Low •Power 0.031(0.8) Typ. Dimensions in inches and (millimeters) • Mounting Position : Any • Weight MARKING: D3L: Approximated 0.011 gram MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Symbol Parameter Ratings at 25℃ ambient temperature unless otherwise specified. Continuous Reverse Voltage SingleVphase half wave, 60Hz, resistive of inductive load. R For capacitive load, derate current by 20% Continuous Forward Current I O IFSM Marking Code PD RATINGS Peak Forward Surge Power Dissipation VRRM 12 20 13 30 RθJARMS VoltageThermal Resistance from Junction 14 21 Maximum VRMS to Ambient Temperature Maximum Voltage Tj DC BlockingOperating 20 30 VDC Maximum Rectified Current Storage Temperature Tstg Average Forward Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range ELECTRICAL CHARACTERISTICS(T ℃ unless a=25TSTG Parameter CHARACTERISTICS Symbol Maximum Forward Voltage at 1.0A DC V(BR) Reverse voltage Maximum Average Reverse Current at @T I A=25℃ Reverse current Forward voltage NOTES: @T A=125℃ VF Ctot 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 V 100 mA 14 40 250 15 50 28 400 35 16 60 18 10 mW 80 100 42 56 ℃/W 70 80 ℃ 100 60 1.0 30 -55~+150 -55 to +125 V 105 140 V 150 200 V A A ℃ -55 to +150 otherwise specified) 120 200 ℃ 40 120 115 150 - 65 to +175 TestFM130-MH conditions Min FM180-MH Typ FM1100-MH Max FM1150-MH Unit FM1200-MH U FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH IVRF=100μA VIRR=10V IF=100mA 0.50 0.70 40 VR=10V,f=1MHz 0.9 V 0.85 0.5 30 10 0.55 IF=10mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Total capacitance 40 40 -55~+125 50 IO IFSM RΘJA Typical Thermal Resistance (Note 2) R Unit FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U CurrentSYMBOL FM120-MH FM130-MH FM140-MH FM150-MH 1 A Maximum Recurrent Peak Reverse Voltage Rated DC Blocking Voltage Value 0.34 6 0.92 μA V m V pF WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ SCS425DS THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Typical Characteristics better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 500 0.130(3.3) Ta=100 ℃ (uA) 10 Ta=75 ℃ 1 0.1 0.01 600 0.031(0.8) Typ. 0 10 20 30 Dimensions in inches and (millimeters) VR 40 (V) Capacitance Characteristics PerELECTRICAL Diode Power Derating Curve MAXIMUM RATINGS AND CHARACTERISTICS 300 250 (mW) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VRRM Maximum RMS Voltage VRMS 14 Maximum 20 DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 10 superimposed on rated load (JEDEC method) Typical 0Junction Capacitance (Note 1)10 0 5 Operating Temperature Range REVERSE VOLTAGE VR (V) Storage Temperature Range 15 CJ TJ 200 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 150 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 100 50 RΘJA Typical Thermal Resistance (Note 2) 13 30 PD Maximum Recurrent Peak Reverse Voltage 12 20 30 POWER DISSIPATION Marking Code 0.031(0.8) Typ. REVERSE VOLTAGE Ta=25 ℃ Ratings at 25℃ ambient temperature unless otherwise specified. f=1MHz Single phase half wave, 60Hz, resistive of inductive load. 40 For capacitive load, derate current by 20% CAPACITANCE BETWEEN TERMINALS CT (pF) 0.040(1.0) 0.024(0.6) Ta=25 ℃ F 50 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Method 2026 100 200 300 400 •0 Polarity : Indicated by cathode band FORWARD VOLTAGE V (mV) • Mounting Position : Any • Weight : Approximated 0.011 gram Characteristics 0.146(3.7) 100 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 1 Reverse 1000 REVERSE CURRENT IR T= a 25 ℃ • 10 T= a 10 0 FORWARD CURRENT ℃ IF (mA) optimize board space. Forward Characteristics loss, high efficiency. • Low power 100 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 20 0 0 -55 to +125 25 50 40 120 75 JUNCTION TEMPERATURE - 65 to +175 TSTG 100 TJ-55 (℃to ) +150 125 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS425DS THRU SOT-23 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM .080(2.04) Maximum RMS Voltage .070(1.78) Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 10 Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.D CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS425DS THRU SOT-23 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High SCS425DS Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 which may be included on WILLAS data sheets and/ or specifications can Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.