WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ SCS491DS THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Schottky Barrier Diode • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES • High surge capability. z Small surface mounting type for overvoltage protection. • Guardring Ultra high-speed switching. • z Low reverse current and low forward voltage • Silicon epitaxial planar chip, metal silicon junction. z High reliability parts meet environmental standards of • Lead-free MIL-STD-19500 /228is available package z Pb-Free • RoHS product for packing code suffix "G" SOT-23 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 RoHS product for packing code suffix ”G” Halogen free product for packing code suffix "H" Halogen free product Mechanical datafor packing code suffix “H” 3 2 rated flame • Epoxy : UL94-V0 Moisture Sensitivity Levelretardant 1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) ina ry z 0.146(3.7) 0.130(3.3) Method 2026 • Polarity Marking: D2E : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Symbol For capacitiveParameter load, derate current by 20% RATINGS Peak reverse voltage SYMBOL FM120-MH V RM VRRM V Maximum Recurrent Peak Reverse Voltage DC reverse voltage R Maximum RMS Voltage Maximum DC Blockingcurrent Voltage Mean rectifying Peak forward surge current Peak Forward Surge Current 8.3 ms single half sine-wave 13 30 25 14 40 VRMS 14 21 28 IVFDC 20 30 40 15 50 Typical Junction Capacitance (Note 1) Operating/Storage temperature -55 to +125 TJ Operating Temperature Range Storage Temperature Range 10 100 35 42 56 70 60 80 100 1.0 30 150 CJ Tstg 18 80 150 3 IFSM RΘJA Typical Thermal Resistance (Note 2) 16 60 20 IFSM Tj superimposedtemperature on rated load (JEDEC method) Junction Unit FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH IO Maximum Average Forward Rectified Current 12 20 Pr el Marking Code Limit -55~+150 40 120 V A 115 150 120 200 V 105 140 V 150 200 V A A -55 to +150 V A ℃ ℃ ℃ - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Electrical Ratings @Ta=25℃ 0.50 0.70 IR @T A=125℃ 0.85 0.9 0.92 0.5 V m 10 NOTES: 1- Measured at 1Parameter MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Symbol Min Typ Max Unit Conditions Forward voltage VF 0.45 V IF=1A Reverse current IR 200 μA VR=20V 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V FM120-M+ SCS491DS THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .122(3.10) .106(2.70) • Epoxy : UL94-V0 rated flame retardant .063(1.60) .047(1.20) Halogen free product for packing code suffix "H" Mechanical data 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry Method 2026 .110(2.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .080(2.04) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range IFSM RΘJA Typical Thermal Resistance (Note 2) CHARACTERISTICS Rated DC Blocking Voltage VF @T A=125℃ IR .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 80 100 .003(0.08) 56 70 80 100 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ TSTG Maximum Forward Voltage at 1.0A DC .008(0.20) 18 10 1.0 30 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) Dimensions in inches and (millimeters) ina • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 10 Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.D CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS491DS THRU SOT-23 Plastic-Encapsulate FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) (2) surge capability. G ‐WS • HighSCS491DS ‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V RRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.