WILLAS FM120-M+ SCS480K THRU FM1200-M SOT-353 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SCHOTTLKY BARRIER DIODE • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES surge capability. • High z Low current rectification • Guardring for overvoltage protection. z High reliability high-speed switching. • Ultra z epitaxial is planar chip, metal silicon junction. • Silicon Pb-Free package available Lead-free parts meet environmental standards of • RoHS product for packing code suffix ”G” MIL-STD-19500 /228 product for packing code suffixcode "G" suffix “H” Halogen product for packing • RoHSfree 0.146(3.7) SOT-353 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free productLevel for packing Moisture Sensitivity 1 code suffix "H" z Mechanical data 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any MARKING: 3T : Approximated 0.011 gram • Weight 0.031(0.8) Typ. 5 0.031(0.8) Typ. 4 im ina Dimensions in inches and (millimeters) 1 2 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at Ratings 25℃ ambient temperature unless otherwise specified.Single Maximum and Electrical Characteristics, Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% Marking Code DC reverse VRM SYMBOL Maximum Recurrent Peak Reverse Voltage Peak forward current Maximum RMS Voltage VR VRRM 12 20 13 30 14 40 IFMVRMS 14 21 20 30 Maximum DC Blocking Voltage VDC Mean rectifying current IO Junction temperature Tj Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 18 80 10 V 100 115 150 120 200 28 1 35 42 56 70 A 105 140 40 50 60 80 100 150 200 CJ Operating Temperature Range TJ Storage Temperature Range 40 0.1 -55~+150 -55 to +125 CHARACTERISTICS Parameter Maximum Average Reverse Current at @T A=25℃ VF @T A=125℃ NOTES: Min Typ Max 0.50 IR 600 1 IR 5 Unit mV µA 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 -55 to +150 450 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ℃ - 65 to +175 Reverse current SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Symbol VF Maximum Forward Voltage at 1.0A DC A ℃ 40 120 TSTG Electrical Ratings @Ta=25℃ Capacitance between terminals 1.0 30 150 IFSM Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 16 60 IO RΘJA Typical Thermal Resistance (Note 2) Unit 15 50 Tstg 2SHUDWLQJStorage superimposed on ratedtemperature load (JEDEC method) Forward voltage Limit 45 V FM1150-MH FM1200-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM120-MH FM130-MH FM140-MH Pr el Peak reverse voltage RATINGS Diode @Ta=25℃ CT 6 25 pF Conditions 0.70 0.85 0.5 IF=10mA 10 IF=100mA 0.9 0.92 VR=10V VR=40V VR=0V VR=10V,f=1MHz WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS480K THRU FM1200-M SOT-353 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-353 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental . 0 7 1 ( 1 . 8standards 0) MIL-STD-19500 /228 . 0 8 6 ( 2 . 20 ) • RoHS product for packing code suffix "G" Halogen free product for packing . 3 0suffix T Y P"H" .) . 0 5 T Y P .( 1code 0.146(3.7) 0.130(3.3) Mechanical data .031(0.80) .039(1.00) ry 0.031(0.8) Typ. 0.031(0.8) Typ. .071(1.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 14 40 IO Maximum Average Forward Rectified Current 15 50 16 60 18 80 35 42 50 60 Operating Temperature Range TJ .031(0.80) .039(1.00) CJ Storage Temperature Range CHARACTERISTICS NOTES: 56 70 105 140 80 100 150 200 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 120 200 40 120 TSTG Maximum Forward Voltage at 1.0A DC .031(0.80) .043(1.10) RΘJA Typical Junction Capacitance (Note 1) 115 150 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 10 100 . 0 0 4 ( 01.0 .08) .007(0.18) 0.50BSC Peak Forward Surge Current 8.3 ms single half sine-wave IFSM .020BSC .096(2.45) Dimensions in inches and (millimeters) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code 0.040(1.0) 0.024(0.6) ina .053(1.35) .045(1.15) Method 2026 .004(0.10) .018(0.46) 0.071(1.8) 0.056(1.4) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. @T A=125℃ 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 .006(0.15) .014(0.35) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.B COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS480K THRU FM1200-M+ SOT-353 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing low forward voltage drop. • High current capability, (1) (2) capability. G ‐WS • High surge SCS480K ‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) high-speed switching. • Ultra Packing code, Tape & Reel Packing epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking contained are intended to provide a product description only. "Typical" parameters Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V V RRM which may be included on WILLAS data sheets and/ or specifications can V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U or indirectly cause injury or threaten a life without expressed written approval V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.