BAS40V(SOT 563)

WILLAS
FM120-M+
BAS40V THRU
FM1200-M+
SOT-563
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIER Diodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SOT-563
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SCHOTTKY
BARRIER
surfaceDIODE
mounted application in order to
• Low profile
optimize
board
space.
FEATURES
• Low power loss, high efficiency.
z
Low• High
Forward
Voltage
Drop
current
capability,
low forward voltage drop.
surge capability.
• High
z
Fast
Switching
• Guardring for overvoltage protection.
z
Pb-Free package is available
• Ultra high-speed switching.
RoHS
product
for packing
codemetal
suffixsilicon
”G” junction.
epitaxial
planar chip,
• Silicon
Lead-free
parts
meet
environmental
standards
•
Halogen free product for packing code suffix “H”of
MIL-STD-19500 /228
z
Moisture
Level
1 suffix "G"
product for packing
code
• RoHS Sensitivity
Halogen free product for packing code suffix "H"
SOD-123H
0.146(3.7)
0.130(3.3)
Marking: KAN
Mechanical data
• Polarity : Indicated by cathode band
Non-Repetitive
Reverse
Position
: Any Voltage
• MountingPeak
DC Blocking
Voltage
• Weight
: Approximated 0.011 gram
Symbol
VRM
5
4
1
2
3
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Limit
Unit
Dimensions in inches and (millimeters)
na
Method 2026
Parameter
6
ry
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic, SOD-123H
• Case
Maximum
Ratings
@Ta=25℃
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
40
V
200
mA
Pdspecified.
Power
RatingsDissipation
at 25℃ ambient temperature unless otherwise
150
mW
Single phase
half wave, Junction
60Hz, resistive
Thermal
Resistance
to of inductive load.
RθJA
For capacitive load, derate current by 20%
Ambient
667
℃/W
IO
mi
Average Rectified Output Current
VR
Pr
eli
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
2SHUDWLQJ temperature
Marking Code
TJ
13
30
14
40
a125
Storage
temperature
range Voltage
Maximum Recurrent
Peak Reverse
TVSTG
RRM
12
20
15
16
-55~+150
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
ELECTRICAL CHARACTERISTICS (Ta=IO25℃ unless otherwise specified)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
Reverse
breakdown
Typical
Thermal
Resistancevoltage
(Note 2)
RΘJAV(BR)
Typical Junction Capacitance (Note 1)
Reverse
voltage leakage
current
Operating
Temperature
Range
Storage Temperature Range
IFSM
Symbol
CJ
TJ
TSTG
Forward voltage
VF
CHARACTERISTICS
Maximum
Forward Voltage at 1.0A DC
Total capacitance
conditions
μA
IR= 10
10
100
1.0
30
Min
40
40
120
V-55
R=30V
to +125
IF=1mA
℃150
115
120
200
Vo
70
105
140
Vo
100
150
200
Vo
Am
Max
Unit
Am
℃/
V
PF
200
-55 to +150
- 65 to +175
380
I =40mA
℃
nA
℃
℃
mV
1000
F
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Average Reverse Current at @T A=25℃
Rated
DC Blocking
Voltage
Reverse
recovery
time
IR
Test
18
80
@T A=125℃
IR
CT
t rr
0.50
VR=0,f=1MHz
IF=10mA, IR=IF=1mA
RL=100Ω
0.70
0.85
5
0.9
pF
0.5
10
0.92
Vo
5
mA
ns
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40V THRU
FM1200-M+
SOT-563
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-563
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.071(1.8)
0.056(1.4)
.024(0.60)
.020(0.50)
.067(1.70)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.059(1.50)
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
na
0.031(0.8) Typ.
mi
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Pr
eli
.043(1.10)
.051(1.30)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.012(0.30)
.004(0.10)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.012(0.3) Typ.
.067(1.70)
.059(1.50)
z
0.146(3.7)
0.130(3.3)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Operating Temperature Range
TJ
.024(0.60)
.020(0.50)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
CHARACTERISTICS
1.0 .007(0.16)
.003(0.08)
Am
30
40
120
-55 to +125
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.011(0.27)
20
30
40
.007(0.17)
@T A=125℃
0.50
0.70
0.85
0.5
IR
0.9
0.92
Vo
10
mA
NOTES:
.067(1.70)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.059(1.50)
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.A CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS40V THRU
FM1200-M+
SOT-563
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
BAS40V ‐T
Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ry
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.031(0.8) Typ.
na
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
eli
mi
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or A
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature
Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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