LL103x(MINI MELF)

WILLAS
FM120-M+
LL103x THRU
FM1200-M+
SMALL
SIGNAL SCHOTTKY
BARRIESBARRIER
SWITCHING
DIODES -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
VOLTAGE
0.35
Amperes
CURRENT
20 to leakage
40 Voltscurrent
better reverse
and thermal
resistance.
MINI-MELF/LL-34
Unit : inch (mm)
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
FEATURES
• Low power loss, high efficiency.
• Low
Forward
Voltage
Drop low forward voltage drop.
current
capability,
• High
• Guard
Ring
Construction
for Transient Protection
surge
capability.
• High
• Low
Reverse Recovery
Time protection.
for overvoltage
• Guardring
• Low
Reverse
Capacitance
high-speed
switching.
• Ultra
• In •compliance
with EUplanar
RoHS chip,
2002/95/EC
directives
Silicon epitaxial
metal silicon
junction.
Sensitivity
Levelenvironmental
1
• Moisture
parts meet
standards of
• Lead-free
0.146(3.7)
0.130(3.3)
.063(1.6)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MECHANICAL
Halogen free DATA
product for packing code suffix "H"
.020(0.5)
.012(0.3)
Case:
Molded Glass MINI
MELF
Mechanical
data
Terminals: Solderable per MIL-STD-750, Method 2026
• Epoxy : UL94-V0 rated flame retardant
Polarity: See Diagram Below
• Case : Molded plastic, SOD-123H
Approx. Weight: 0.03 grams
,
•
Terminals
:Plated
• Mounting
Position:
Any terminals, solderable per MIL-STD-750
Method 2026
•
•
•
•
.055(1.4)DIA.
0.012(0.3) Typ.
.020(0.5)
.012(0.3)
0.040(1.0)
0.024(0.6)
.146(3.7)
.130(3.3)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
AND ELECTRICAL
CHARACTERISTICS
(TJ =25°C unless otherwise noted)
Ratings
at 25℃RATINGS
ambient temperature
unless otherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
RATINGS
S YM B O L
LL
103A
LL
103B
LL
103C
U N IT S
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking
Code
Peak R
e p e t i t i ve R e ve r s e V o l t a g e
VRRM
V R R M 12
20
13 4 0
30
14
40
15 3 0
50
16
60
182 0
80
10
100
V 115
Maximum Recurrent Peak Reverse Voltage
150
120
200
V
R M S R eRMS
v e r s eVoltage
Vo lta g e
Maximum
VRMS V R M S 14
21 2 8
28
35 2 1
42
561 4
70
V 105
140
V
Maximum DC Blocking Voltage
VDC
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IF S M
IFSM
M a x. A ve r a g e R e c t i f i e d C ur r e nt
. 3 msine-wave
s
P e aForward
k F o r wSurge
a r d SCurrent
u r g e C8.3
u r rms
e n tsingle
, t < 0half
Peak
superimposed on rated load (JEDEC method)
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5 O C
Typical Thermal Resistance (Note 2)
RΘJA
CJ
Typical
= 20mA
M a x i mJunction
u m F o rCapacitance
w a r d V o l t a g(Note
e , I F 1)
mA
I F = 2 0 0 Temperature
Operating
Range
Storage Temperature Range
M a xi m um R e ve r s e C ur r e nt
Ty p i c a l J u n c t i o nCHARACTERISTICS
C a p a c i t a nc e ( N o t e 1 )
Maximum Forward Voltage at 1.0A DC
TJ
TSTG
PD
20
350
1.0
30
15
VF
-55 to +125
IR
5@30V
400
0 .3 7
0 .7 0
5@20V
mA
A
A
mW
40
120
-55 to +150
A
- 65 to +175
℃
V
µA
5@10V
FM1200-MH U
SYMBOL CFM120-MH FM130-MH FM140-MH FM150-MH
5 0 FM160-MH FM180-MH FM1100-MH FM1150-MH
pF
J
V
0.9
0.92
VF
0.50
0.70
0.85
Maximum
Ty p i c a l Average
R e v e r s eReverse
R e c o v eCurrent
r y ( N o at
t e 2@T
) A=25℃
@T A=125℃
Rated DC Blocking Voltage
IF ( A V )
trr
10
Ty p i c a l T h e r m a l R e s i s t a n c e
NOTES:
RθJ A
250
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
S t o r a g e Te m p e r a t u r e R a n g e
2- Thermal Resistance From Junction to Ambient
TS T G
-5 5 to +1 5 0
IR
0.5
ns
10
O
m
C / W
O
C
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=50mA to IR=200mA, RL=100Ω
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
LL103x THRU
FM1200-M+
SMALL
SIGNAL SCHOTTKY
BARRIES SWITCHING DIODES
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
betterAND
reverse
leakage current and thermal
resistance.
RATING
CHARACTERISTIC
CURVES
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
1000
• High surge capability.
• Guardring for overvoltage protection.
• Ultra100high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
10
POWER DISSIPATION,mW
FORWARD CURRENT (mA)
MIL-STD-19500 /228
Halogen
free product for packing code suffix "H"
1.0
Mechanical data
• Epoxy
0.1 : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0.01
• Terminals
:Plated terminals, solderable per MIL-STD-750
0.5
0.012(0.3) Typ.
400
• RoHS product for packing code suffix "G"
0
0.146(3.7)
0.130(3.3)
500
0.071(1.8)
0.056(1.4)
300
200
0.040(1.0)
0.024(0.6)
100
0.031(0.8) Typ.
0.031(0.8) Typ.
0
0
100
200
1.0
Method 2026
FORWARD
VOLTAGE
Polarity : Indicated
by cathode
band (V)
O
AMBIENT TEMPERATURE ( C)
Dimensions in inches and (millimeters)
•
Position : Any
• Mounting
Fig.1 FORWARD
CHARACTERISTICS
• Weight : Approximated 0.011 gram
Fig.2 POWER DISSIPATION DERATING CURVE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C J , CAPACITANCE (pF)
100
Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC1.0Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed0.1
on rated load (JEDEC method)
10 (Note 20
Typical Thermal0Resistance
2)
30
40
RΘJA50
V R(Note
, REVERSE
Typical Junction Capacitance
1) VOLTAGE (V)
CJ
Operating Temperature Range
TJ
1.0
30
40
120
-55 to +125
A
℃
-55 to +150
Fig.3
TYPICALRange
CAPACITANCE vs REVERSE TSTG
VOLATGE
Storage
Temperature
A
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
LL103x THRU
FM1200-M+
SMALL
SIGNAL SCHOTTKY
BARRIESBARRIER
SWITCHING
DIODES -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY
RECTIFIERS
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(1) (2)
G ‐WS Tape&Reel: 2.5 Kpcs/Reel surge capability.
• High Part Number ‐T
Guardring for overvoltage protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
or indirectly cause injury or threaten a life without expressed written approval Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.