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STH410N4F7-2AG,
STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
40 V
1.1 mΩ
200 A
365 W
STH410N4F7-2AG
STH410N4F7-6AG





Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Figure 1: Internal schematic diagram
Applications

Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
STH410N4F7-2AG
STH410N4F7-6AG
February 2016
Marking
410N4F7
Package
H²PAK-2
H²PAK-6
DocID027734 Rev 4
This is information on a product in full production.
Packing
Tape And Reel
1/19
www.st.com
Contents
STH410N4F7-2AG, STH410N4F7-6AG
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
2/19
4.1
H²PAK-2 package information ......................................................... 10
4.2
H²PAK-6 package information ......................................................... 13
4.3
H²PAK packing information ............................................................. 16
Revision history ............................................................................ 18
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at Tcase = 25 °C
200
Drain current (continuous) at Tcase = 100 °C
200
IDM
Drain current (pulsed)
800
A
PTOT
Total dissipation at Tcase = 25 °C
365
W
(3)
EAS
Single pulse avalanche energy
1.9
J
-55 to 175
°C
(1)
ID
(2)
Tstg
Storage temperature range
Tj
Operating junction temperature range
A
Notes:
(1)
(2)
(3)
Current is limited by package, the current capability of the silicon is 420 A at 25 °C.
Pulse width is limited by safe operating area.
Tj ≤ 175 °C, Iav=80A
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.41
Thermal resistance junction-pcb
35
Rthj-pcb
(1)
Value
Unit
°C/W
Notes:
(1)
When mounted on a 1-inch² FR-4 board, 2oz Cu.
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3/19
Electrical characteristics
2
STH410N4F7-2AG, STH410N4F7-6AG
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
Min.
VGS = 0 V, ID = 250 µA
Typ.
Max.
40
Unit
V
VGS = 0 V, VDS = 40 V
10
VGS = 0 V, VDS = 40 V,
Tcase = 125 °C
100
Gate-body leakage current
VDS = 0 V, VGS = 20 V
200
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4.5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 90 A
1.1
mΩ
Unit
IDSS
Zero gate voltage drain
current
IGSS
2.5
0.8
µA
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
Min.
Typ.
Max.
-
11500
-
-
3500
-
-
390
-
-
141
-
-
65
-
-
27
-
Test conditions
Min.
Typ.
Max.
VDD = 20 V, ID = 90 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 13: "Test circuit for
resistive load switching times"
and Figure 18: "Switching time
waveform")
-
35
-
-
198
-
-
108
-
-
44.2
-
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 20 V, ID = 180 A,
VGS = 10 V (see Figure 14:
"Test circuit for gate charge
behavior")
pF
nC
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/19
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
DocID027734 Rev 4
Unit
ns
STH410N4F7-2AG, STH410N4F7-6AG
Electrical characteristics
Table 7: Source-drain diode
Symbol
(1)
ISD
(2)
VSD
Parameter
Test conditions
Source-drain current
Min.
Typ.
Max.
Unit
-
200
A
1.3
V
Forward on voltage
VGS = 0 V, ISD = 90 A
-
trr
Reverse recovery time
-
74.4
ns
Qrr
Reverse recovery
charge
-
115
nC
IRRM
Reverse recovery
current
ISD = 180 A, di/dt = 100 A/µs,
VDD = 32 V, Tj = 25 °C (see Figure
15: "Test circuit for inductive load
switching and diode recovery
times")
-
3.1
A
Notes:
(1)
(2)
Limited by package, 420 A current allowed by silicon.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027734 Rev 4
5/19
Electrical characteristics
2.2
6/19
STH410N4F7-2AG, STH410N4F7-6AG
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward characteristics
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7/19
Test circuits
3
STH410N4F7-2AG, STH410N4F7-6AG
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
8/19
DocID027734 Rev 4
Figure 18: Switching time waveform
STH410N4F7-2AG, STH410N4F7-6AG
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID027734 Rev 4
9/19
Package information
4.1
STH410N4F7-2AG, STH410N4F7-6AG
H²PAK-2 package information
Figure 19: H²PAK-2 package outline
8159712_D
10/19
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
Package information
Table 8: H²PAK-2 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
-
7.80
15.80
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID027734 Rev 4
11/19
Package information
STH410N4F7-2AG, STH410N4F7-6AG
Figure 20: H²PAK-2 recommended footprint
8159712_D
12/19
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
4.2
Package information
H²PAK-6 package information
Figure 21: H²PAK-6 package outline
DocID027734 Rev 4
13/19
Package information
STH410N4F7-2AG, STH410N4F7-6AG
Table 9: H²PAK-6 package mechanical data
mm
Dim.
Min.
14/19
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
H1
7.40
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
L4
1.5
1.75
M
1.90
2.50
R
0.20
0.60
V
0°
8°
DocID027734 Rev 4
-
10.40
7.80
STH410N4F7-2AG, STH410N4F7-6AG
Package information
Figure 22: H²PAK-6 recommended footprint
Dimensions are in mm.
DocID027734 Rev 4
15/19
Package information
4.3
STH410N4F7-2AG, STH410N4F7-6AG
H²PAK packing information
Figure 23: Tape outline
Figure 24: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess hole
At slot location
B
D
C
N
A
Tape slot
In core for
Full radius
At hub
Tape start
16/19
G measured
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
Package information
Table 10: Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027734 Rev 4
Min.
Max.
330
13.2
26.4
30.4
17/19
Revision history
5
STH410N4F7-2AG, STH410N4F7-6AG
Revision history
Table 11: Document revision history
18/19
Date
Revision
Changes
10-Apr-2015
1
First release.
13-May-2015
2
Updated Static.
04-Dec-2015
3
Updated note 1 in Table 2: "Absolute maximum ratings",
Figure 2: "Safe operating area" and Figure 3: "Thermal impedance".
17-Feb-2016
4
Modified: Table 2: "Absolute maximum ratings", Table 4: "Static"
Modified: Figure 2: "Safe operating area"
Minor text changes
DocID027734 Rev 4
STH410N4F7-2AG, STH410N4F7-6AG
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DocID027734 Rev 4
19/19
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