STD37P3H6AG Automotive-grade P-channel -30 V, 11 mΩ typ., -49 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD37P3H6AG -30 V 15 mΩ -49 A 60 W • Figure 1: Internal schematic diagram D(2, TAB) • • • • Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD37P3H6AG 37P3H6 DPAK Tape and Reel August 2015 DocID027952 Rev 1 This is information on a product in full production. 1/16 www.st.com Contents STD37P3H6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/16 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 Revision history ............................................................................ 15 DocID027952 Rev 1 STD37P3H6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TCASE = 25 °C -49 Drain current (continuous) at TCASE = 100 °C -34.5 IDM Drain current (pulsed) -196 A PTOT Total dissipation at T${casePCB} = 25 °C 60 W (2) EAS Single pulse avalanche energy 750 mJ -55 to 175 °C Value Unit ID (1) Tstg Storage temperature Tj Operating junction temperature A Notes: (1) (2) Pulse width is limited by safe operating area. starting Tj = 25 °C, ID = -40 A, VDD = 25 V. Table 3: Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Thermal resistance junction-case 2.5 Thermal resistance junction-pcb 50 °C/W Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s. DocID027952 Rev 1 3/16 Electrical characteristics 2 STD37P3H6AG Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = -250 mA -30 Typ. Max. Unit V VGS = 0 V, VDS = -30 V -1 VGS = 0 V, VDS = -30 V, TCASE = 125 °C -10 -100 nA -4 V 11 15 mΩ Min. Typ. Max. Unit - 1630 - - 376 - - 230 - - 30.6 - - 9.7 - - 10 - Min. Typ. Max. - 13.4 - - 15.8 - - 23.6 - - 9.4 - IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = -10 V, ID = -25 A -2 µA Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = -25 V, f = 1 MHz, VGS = 0 V VDD = -15 V, ID = -40 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = -15 V, ID = -20 A RG = 4.7 Ω, VGS = -10 V (see Figure 13: "Switching times test circuit for resistive load") DocID027952 Rev 1 Unit ns STD37P3H6AG Electrical characteristics Table 7: Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - -49 A (1) Source-drain current (pulsed) - -196 A (2) Forward on voltage VGS = 0 V, ISD = -40 A - -1.3 V trr Reverse recovery time - 25.3 ns Qrr Reverse recovery charge - 19.2 nC IRRM Reverse recovery current ISD = -40 A, di/dt = 100 A/µs, VDD = -24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - -1.5 A ISDM VSD Notes: (1) (2) Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027952 Rev 1 5/16 Electrical characteristics 2.1 STD37P3H6AG Electrical characteristics (curves) For the P-channel Power MOSFET, current and voltage polarities are reversed 6/16 Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027952 Rev 1 STD37P3H6AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed DocID027952 Rev 1 7/16 Test circuits 3 STD37P3H6AG Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/16 DocID027952 Rev 1 STD37P3H6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID027952 Rev 1 9/16 Package information 4.1 STD37P3H6AG DPAK (TO-252) type A2 package information Figure 16: DPAK (TO-252) type A2 package outline 10/16 DocID027952 Rev 1 STD37P3H6AG Package information Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID027952 Rev 1 8° 11/16 Package information STD37P3H6AG Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm) 12/16 DocID027952 Rev 1 STD37P3H6AG 4.2 Package information DPAK (TO-252) packing information Figure 18: DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID027952 Rev 1 13/16 Package information STD37P3H6AG Figure 19: DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 14/16 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID027952 Rev 1 18.4 22.4 STD37P3H6AG 5 Revision history Revision history Table 10: Document revision history Date Revision 05-Aug-2015 1 Changes Initial release DocID027952 Rev 1 15/16 STD37P3H6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID027952 Rev 1