STD45P4LLF6AG Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD45P4LLF6AG -40 V 15 mΩ -50 A Figure 1: Internal schematic diagram D(2, TAB) Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD45P4LLF6AG 45P4LLF6 DPAK Tape and reel July 2015 DocID027807 Rev 2 This is information on a product in full production. 1/16 www.st.com Contents STD45P4LLF6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/16 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 Revision history ............................................................................ 15 DocID027807 Rev 2 STD45P4LLF6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -40 V VGS Gate-source voltage ±18 V V Drain current (continuous) at Tcase = 25 °C -50 Drain current (continuous) at Tcase = 100 °C -31 IDM(1) Drain current (pulsed) -200 A PTOT Total dissipation at Tcase = 25 °C 58 W EAS(2) Single pulse avalanche energy 160 mJ –55 to 150 °C ID Tstg Storage temperature Tj(3) Operating junction temperature A Notes: (1) Pulse width is limited by safe operating area. (2) starting Tj = 25 °C, RG = 47 Ω, ID(min) = -25 A. (3) HTRB performed at Tj = 175 °C, VDS = 100% V(BR)DSS. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient DocID027807 Rev 2 Value 2.14 50 Unit °C/W 3/16 Electrical characteristics 2 STD45P4LLF6AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = -250 µA Min. Typ. Max. -40 Unit V VGS = 0 V, VDS = -40 V -1 VGS = 0 V, VDS = -40 V, Tcase = 125 °C -10 Gate-body leakage current VDS = 0 V, VGS = -18 V -100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA -2.5 V RDS(on) Static drain-source onresistance VGS = -10 V, ID = -25 A 12 15 VGS = -4.5 V, ID = -25 A 17 20 Min. Typ. Max. - 3525 - - 345 - - 240 - - 65.5 - - 11.5 - - 13 - Min. Typ. Max. - 12 - - 35.5 - - 63.5 - - 31 - IDSS Zero gate voltage drain current IGSS -1 µA mΩ Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = -25 V, f = 1 MHz, VGS = 0 V VDD = -20 V, ID = -50 A, VGS = -10 V (see Figure 14: "Gate charge test circuit") Unit pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = -20 V, ID = -25 A RG = 4.7 Ω, VGS = -10 V (see Figure 13: "Switching times test circuit for resistive load" ) DocID027807 Rev 2 Unit ns STD45P4LLF6AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - -50 A ISDM(1) Source-drain current (pulsed) - -200 A VSD(2) Forward on voltage - -1.3 V VGS = 0 V, ISD = -50 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = -50 A, di/dt = -100 A/µs, VDD = -32 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 27.5 ns - 24.5 nC - -1.8 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027807 Rev 2 5/16 Electrical characteristics 2.1 6/16 STD45P4LLF6AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027807 Rev 2 STD45P4LLF6AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed. DocID027807 Rev 2 7/16 Test circuits 3 STD45P4LLF6AG Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/16 DocID027807 Rev 2 STD45P4LLF6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027807 Rev 2 9/16 Package information 4.1 STD45P4LLF6AG DPAK (TO-252) type A2 package information Figure 16: DPAK (TO-252) type A2 package outline 10/16 DocID027807 Rev 2 STD45P4LLF6AG Package information Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID027807 Rev 2 8° 11/16 Package information STD45P4LLF6AG Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm) 12/16 DocID027807 Rev 2 STD45P4LLF6AG 4.2 Package information DPAK (TO-252) packing information Figure 18: DPAK (TO-252) tape outline DocID027807 Rev 2 13/16 Package information STD45P4LLF6AG Figure 19: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 14/16 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID027807 Rev 2 18.4 22.4 STD45P4LLF6AG 5 Revision history Revision history Table 10: Document revision history Date Revision 28-Apr-2015 1 First release. 2 Modified: VGS values in absoute maximum ratings table and static table. Updated: DPAK (TO-252) type A2 package information section updated. Minor text changes. 22-Jul-2015 Changes DocID027807 Rev 2 15/16 STD45P4LLF6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID027807 Rev 2