BCW66GLT1(SOT 23)

WILLAS
FM120-M+
BCW66GLT1THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
NPN
Silicon
• Batch process design, excellent power dissipation offers
better
reverse
current
and thermal resistance.
ƽ We
declare
that leakage
the material
of product
surface
mounted
application in order to
• Low profilewith
compliance
RoHS
requirements.
optimize
board space.
Pb-Free
package
is available
Low product
power loss,
high efficiency.
•RoHS
for packing
code suffix ”G”
High current capability, low forward voltage drop.
•Halogen
free product for packing code suffix “H”
capability.
• High surge
Moisture
Sensitivity
Level 1
• Guardring for overvoltage protection.
DEVICE MARKING AND ORDERING INFORMATION
• Ultra high-speed switching.
Device
Marking
Shipping
epitaxial planar chip,
metal silicon junction.
• Silicon
Lead-free parts meet environmental
standards
of
•BCW66GLT1
EG
3000/Tape&Reel
MIL-STD-19500 /228
MAXIMUM
RATINGS
for packing code suffix "G"
• RoHS product
Halogen
free product for packing
code suffix "H"
Rating
Symbol
Value
Unit
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT–23
0.071(1.8)
0.056(1.4)
3
COLLECTOR
Mechanical data
Collector–Emitter Voltage
V CEO
45
Vdc
• Epoxy : UL94-V0 rated flame retardant
Collector–Base Voltage
V CBO
75
Vdc
• Case : Molded plastic, SOD-123H
,
Emitter–Base
EBO
Vdc
• Terminals Voltage
:Plated terminals, Vsolderable
per7.0
MIL-STD-750
IC
800
Max
Unit
PD
225
mW
ELECTRICAL
CHARACTERISTICS
Pr
el
Derate
above
25°C temperature unless otherwise specified.
1.8
mW/°C
Ratings
at 25℃
ambient
Resistance,
Junction
to Ambient
SingleThermal
phase half
wave, 60Hz,
resistive
of inductive load. R θJA
556
°C/W
Total Device
For capacitive
load,Dissipation
derate current by 20%
PD
300
mW
Alumina Substrate,
(2) TA = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Derate above 25°C
2.4
mW/°C
Marking Code
12
13
14
15
16
18
10
115
120
Thermal
Resistance,
Junction
to
Ambient
R
30417
40 °C/W50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM θJA 20
Junction and Storage Temperature
TJ , Tstg
–55
to
+150
°C
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
20
30
unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (TA = 25°CVDC
IO
Characteristic
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Min
RΘJA
V (BR)CEO
CJ
45
Maximum Average Forward Rectified Current
40
50
60
Typ
Max
—
—
40
120
OFF CHARACTERISTICS
Breakdown
TypicalCollector–Emitter
Thermal Resistance
(Note 2) Voltage
Typical(IJunction
Capacitance (Note 1)
C = 10mAdc, I B= 0 )
Collector–Emitter Breakdown Voltage
Storage Temperature Range
(IC = 10 µAdc, V EB = 0 )
V (BR)CES
TSTG
Emitter–BaseCHARACTERISTICS
Breakdown Voltage
E
C
Maximum Average Reverse Current at @T A=25℃
Collector Cutoff Current
Rated DC Blocking Voltage
(VCE = 45 Vdc, IE = 0 )
75
Unit
Vdc
@T A=125℃
5.0
0.50 —
—
0.70
Vdc 0.85
I CES IR
0.92
10
20
nAdc
—
—
20
µAdc
(V EB= 4.0 Vdc, I C = 0)
—
—
20
nAdc
(V EB= 7.0 Vdc, I C = 0) (3)
—
—
100
nAdc
NOTES:(VCE = 45 Vdc, IE = 0 ) (TA=150°C)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.5
—
2- Thermal Resistance From Junction to Ambient
200
— - 65 to +175
Vdc
—
Emitter Cutoff Current
150
-55 to +150
—
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V (BR)EBO
VF
Maximum
Voltage
at 1.0A DC
(I =Forward
10 µAdc,
I = 0)
-55 to +125
TJ
Operating Temperature Range
80
1.0
30
superimposed on rated load (JEDEC method)
EMITTER
mAdc
Symbol
Maximum DC Blocking Voltage
0.031(0.8) Typ.
2
Dimensions in inches and (millimeters)
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C MAXIMUM RATINGS AND
0.031(0.8) Typ.
im
ina
• Polarity : Indicated by cathode band
THERMAL
CHARACTERISTICS
Position : Any
• Mounting
Characteristic
• Weight : Approximated 0.011 gram
BASE
ry
Method
2026
Collector Current
— Continuous
0.040(1.0)
0.024(0.6)
1
I EBO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Added IEBO test to guarantee quality for oxide defects
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:*LT1THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
(TA = 25°C unless otherwise noted) (Continued)
ELECTRICAL
optimizeCHARACTERISTICS
board space.
high efficiency.
• Low power loss,Characteristic
Symbol
• High current capability, low forward voltage drop.
ON CHARACTERISTICS
surge capability.
• High
DC Current
Gain
hFE
for overvoltage protection.
• Guardring
( IC= 100 µAdc, VCE = 10 Vdc )
• Ultra high-speed switching.
( IC= 10 mAdc, VCE = 1.0 Vdc )
epitaxial planar chip, metal silicon junction.
• Silicon
( IC= 100 mAdc, VCE = 1.0 Vdc )
parts meet environmental standards of
• Lead-free
Min
fT
Turn–On Time
t on
RATINGS AND ELECTRICAL
(I B1= I MAXIMUM
B2= 15 mAdc,I C = 150mAdc, R L = 150Ω)
Ratings atTurn–Off
25℃ ambient
Time temperature unless otherwise specified.
t off
Single phase
half
wave,
60Hz,Cresistive
of inductive
load.
(I B1= I B2= 15 mAdc,I
= 150mAdc,
R L = 150Ω)
For capacitive load, derate current by 20%
—
—
110
160
—
—
—
400
60
—
—
100
—
—
—
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MHz0.040(1.0)
0.024(0.6)
—
12
pF
—
80
pF
0.031(0.8) Typ.
—
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
—
—
10
dB
—
—
CHARACTERISTICS
100
ns
400
ns
—
—
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Pr
el
RATINGS
Marking Code
50
im
ina
•
•
•
Weight CHARACTERISTICS
: Approximated 0.011 gram
SWITCHING
Unit
ry
V CErated
= 10 flame
Vdc, f =
100 MHz)
(I C = 20mAdc,
: UL94-V0
retardant
• Epoxy
Output
Capacitance
• Case : Molded plastic, SOD-123H
C obo
,
(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
• Terminals
:Plated terminals, solderable per MIL-STD-750
Input Capacitance
Method 2026
C ibo
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Polarity : Indicated by cathode band
Noise Figure
NF
Mounting
Position
: Any
(V CE = 5.0 Vdc,
I C = 0.2
mAdc, R S = 1.0 kΩ, f = 1.0 kHz)
Max
0.146(3.7)
0.130(3.3)
—
( IC= 300 mAdc, V/228
CE = 2.0 Vdc )
MIL-STD-19500
• RoHS product for packing code suffix "G"
Halogen free product
for packing code suffix "H"
SMSMALL–SIGNAL
CHARACTERISTICS
Mechanical
data Product
Current–Gain — Bandwidth
Typ
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:*LT1THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
standards of
• Lead-free parts meet environmental
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
.006(0.15)MIN.
0.012(0.3) Typ.
MIL-STD-19500 /228
"G"
• RoHS product for packing code suffix .106(2.70)
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
im
ina
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.080(2.04)
.070(1.78)
RATINGS
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
.004(0.10)MAX.
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
40
120
-55 to +125
-55 to +150
- 65 to +175
.020(0.50)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.012(0.30)
VF
Maximum Forward Voltage at 1.0A DC
1.0
30
.055(1.40)
.035(0.89)
0.031(0.8) Typ.
.083(2.10)
Method 2026
0.031(0.8) Typ.
.110(2.80)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
Dimensions in inches and (millimeters)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC:*LT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability, low
(1) forward voltage drop.
BCW66GLT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical WILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range
TSTG
or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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