BCW68GLT1(SOT 23)

WILLAS
FM120-M+
BCW68GLT1 THRU
General
Purpose
Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
PNPbetter
Silicon
reverse leakage current and thermal resistance.
•
SOD-123H
• Low profile surface mounted application in order to
RoHS
product for packing code suffix "G",
optimize board space.
Halogen
free product
for packing
code suffix "H"
loss, high
efficiency.
• Low power
0.146(3.7)
0.130(3.3)
.
• Weight
• High: current
0.008g capability, low forward voltage drop.
• High surge capability.
• Moisture Sensitivity Level 1
0.012(0.3) Typ.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
ORDERING INFORMATION
• Silicon epitaxial planar chip, metal silicon junction.
Device parts meet
Marking
Shipping of
environmental standards
• Lead-free
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
BCW68GLT1
DG code suffix 3000/Tape&Reel
"G"
• RoHS product for packing
Halogen
free
product
for
packing code suffix "H"
MAXIMUM RATINGS
Mechanical data
SOT–23
Rating
Symbol
Unit
: UL94-V0 rated flame
retardant Value
• Epoxy
– 45
Vdc
Collector–Emitter
Voltage
V CEO
plastic, SOD-123H
• Case : Molded
,
Collector–Base
Voltage terminals,Vsolderable
– MIL-STD-750
60
Vdc
• Terminals :Plated
per
CBO
Method 2026
Emitter–Base Voltage
V EBO
• Polarity : Indicated by cathode band
Collector Current — Continuous
IC
• Mounting Position : Any
– 5.0
Vdc
– 800
mAdc
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
COLLECTOR
0.031(0.8) Typ.
1
Dimensions in inches
BASE and (millimeters)
2
EMITTER
• Weight
: Approximated 0.011 gram
THERMAL
CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Total Device Dissipation FR– 5 Board, (1)
Ratings at 25℃ ambient temperature unless otherwise specified.
PD
225
mW
TA = 25°C
Single phase
half wave, 60Hz, resistive of inductive load.
1.8
mW/°C
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Total Device Dissipation
PD 12
Marking
Code Substrate, (2) T = 25°C
13300
14 mW 15
16
18
10
115
120
Alumina
A
2.4
mW/°C
20
30
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
V
RRM
Derate above 25°C
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS RθJA
Thermal
Resistance, Junction to Ambient
417
°C/W
Maximum
DC Blocking
Voltage
60
80
100
150
200
Junction
and Storage
Temperature
–5530to +150 40 °C 50
VDC TJ , Tstg20
Characteristic
IO
IFSM
OFFThermal
CHARACTERISTICS
Typical
Resistance (Note 2)
RΘJA
Maximum Average Forward Rectified Current
Typ
1.0
30
Max
– 45
—
40
120
—
– 60
—
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
TypicalCollector–Emitter
Junction Capacitance
(Note 1)Voltage (IC = –10 mAdc,
CJ IB = 0 )
Breakdown
TJ
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )
Operating Temperature Range
Storage Temperature Range
TSTG
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff
Current
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
(VCE = –45 Vdc, I B= 0 , TA = 150°C)
Rated DC Blocking Voltage
@T A=125℃
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
Min
V
(BR)CEO
-55 to +125
V (BR)CES
V
(BR)EBO
– 5.0
Unit
Vdc
—
Vdc
- 65 to +175
—
—
Vdc
-55 to +150
I CES FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
VF
Maximum
Voltage
(VCEForward
= –45 Vdc,
I E= at
0 )1.0A DC
Symbol
0.50
IR
I EBO
—
0.70
—
—
—
—
—
– 20
0.5
– 10
10
– 20
0.85
nAdc
0.9
µAdc
0.92
nAdc
NOTES:
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
1- Measured
at 1
voltage
of 4.0 VDC.
2. Alumina
= MHZ
0.4 xand
0.3applied
x 0.024reverse
in. 99.5%
alumina.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW68GLT1THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application
order otherwise
to
• Low profile
ELECTRICAL
CHARACTERISTICS
(TA = 25°Cinunless
noted) (Continued)
optimize board space.
Symbol
high efficiency.
• Low power loss,Characteristic
ON CHARACTERISTICS
• High current capability, low forward voltage drop.
DC Current
Gain
hFE
surge capability.
• High
for overvoltage
protection.
• Guardring
( IC= –10 mAdc,
VCE = –1.0 Vdc
)
switching.
• Ultra
( IC= high-speed
–100 mAdc, V
CE = –1.0 Vdc )
epitaxial
chip,Vdc
metal
• Silicon
( IC= –300
mAdc,planar
VCE = –1.0
) silicon junction.
parts meet
environmental
• Lead-free
Collector–Emitter
Saturation
Voltage standards of
MIL-STD-19500 /228
( IC = – 300 mAdc, IB = –30 mAdc )
product for packing code suffix "G"
• RoHS
Base–Emitter
Saturation
Voltagecode suffix "H"
Halogen
free product
for packing
(
I
=
–
500
mAdc,
I
=
–50
mAdc )
C
B
Mechanical
data
Min
Typ
Unit
Max
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
—
120
160
60
—
—
—
400
—
—
V CE(sat)
—
—
– 1.5
Vdc
V BE(sat)
—
—
– 2.0
Vdc
0.071(1.8)
0.056(1.4)
SMSMALL–SIGNAL
rated flame retardant
• Epoxy : UL94-V0CHARACTERISTICS
0.040(1.0)
0.024(0.6)
Current–Gain — Bandwidth Product
f
100
T
• Case : Molded plastic, SOD-123H
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
Output Capacitance
—
—
MHz
0.031(0.8) Typ.
0.031(0.8) Typ.
C obo
—
C ibo
—
—
105
pF
NF
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
—
—
10
dB
Vdc, I E2026
= 0, f = 1.0 MHz)
(V CB = – 10Method
Polarity
: Indicated by cathode band
Input Capacitance
•
Vdc, I C: =Any
0, f = 1.0 MHz)
(V EB = –0.5
Position
• Mounting
Noise
Figure
• Weight : Approximated 0.011 gram
—
18
pF
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW68GLT1THRU
General
Purpose
Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
in order to
• Low profile surface mounted applicationSOT-23
SOD-123H
optimize board space.
0.146(3.7)
0.130(3.3)
.106(2.70)
MIL-STD-19500 /228
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
silicon junction.
• Silicon epitaxial planar chip, metal.122(3.10)
• Lead-free parts meet environmental standards of
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
Mechanical data
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.080(2.04)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,.070(1.78)
60Hz, resistive of inductive load.
.003(0.08)
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
.004(0.10)MAX.
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.020(0.50)
TSTG
.012(0.30)
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
15
50
16
60
18
80
35
42
50
60
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
14
40
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
.055(1.40)
.035(0.89)
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
0.5
Rated DC Blocking Voltage
10
Dimensions
inIR inches and (millimeters)
@T A=125℃
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW68GLT1THRU
Purpose
Transistors
FM1200-M+
1.0AGeneral
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(1)
BCW68GLT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring for overvoltage protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related 65
to
+175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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