WILLAS FM120-M+ BCW68GLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNPbetter Silicon reverse leakage current and thermal resistance. • SOD-123H • Low profile surface mounted application in order to RoHS product for packing code suffix "G", optimize board space. Halogen free product for packing code suffix "H" loss, high efficiency. • Low power 0.146(3.7) 0.130(3.3) . • Weight • High: current 0.008g capability, low forward voltage drop. • High surge capability. • Moisture Sensitivity Level 1 0.012(0.3) Typ. • Guardring for overvoltage protection. • Ultra high-speed switching. ORDERING INFORMATION • Silicon epitaxial planar chip, metal silicon junction. Device parts meet Marking Shipping of environmental standards • Lead-free 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 BCW68GLT1 DG code suffix 3000/Tape&Reel "G" • RoHS product for packing Halogen free product for packing code suffix "H" MAXIMUM RATINGS Mechanical data SOT–23 Rating Symbol Unit : UL94-V0 rated flame retardant Value • Epoxy – 45 Vdc Collector–Emitter Voltage V CEO plastic, SOD-123H • Case : Molded , Collector–Base Voltage terminals,Vsolderable – MIL-STD-750 60 Vdc • Terminals :Plated per CBO Method 2026 Emitter–Base Voltage V EBO • Polarity : Indicated by cathode band Collector Current — Continuous IC • Mounting Position : Any – 5.0 Vdc – 800 mAdc 0.040(1.0) 0.024(0.6) 3 0.031(0.8) Typ. COLLECTOR 0.031(0.8) Typ. 1 Dimensions in inches BASE and (millimeters) 2 EMITTER • Weight : Approximated 0.011 gram THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation FR– 5 Board, (1) Ratings at 25℃ ambient temperature unless otherwise specified. PD 225 mW TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. 1.8 mW/°C Derate above 25°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 556 °C/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Total Device Dissipation PD 12 Marking Code Substrate, (2) T = 25°C 13300 14 mW 15 16 18 10 115 120 Alumina A 2.4 mW/°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V RRM Derate above 25°C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS RθJA Thermal Resistance, Junction to Ambient 417 °C/W Maximum DC Blocking Voltage 60 80 100 150 200 Junction and Storage Temperature –5530to +150 40 °C 50 VDC TJ , Tstg20 Characteristic IO IFSM OFFThermal CHARACTERISTICS Typical Resistance (Note 2) RΘJA Maximum Average Forward Rectified Current Typ 1.0 30 Max – 45 — 40 120 — – 60 — ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) TypicalCollector–Emitter Junction Capacitance (Note 1)Voltage (IC = –10 mAdc, CJ IB = 0 ) Breakdown TJ Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Operating Temperature Range Storage Temperature Range TSTG Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ (VCE = –45 Vdc, I B= 0 , TA = 150°C) Rated DC Blocking Voltage @T A=125℃ Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) Min V (BR)CEO -55 to +125 V (BR)CES V (BR)EBO – 5.0 Unit Vdc — Vdc - 65 to +175 — — Vdc -55 to +150 I CES FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH VF Maximum Voltage (VCEForward = –45 Vdc, I E= at 0 )1.0A DC Symbol 0.50 IR I EBO — 0.70 — — — — — – 20 0.5 – 10 10 – 20 0.85 nAdc 0.9 µAdc 0.92 nAdc NOTES: 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 1- Measured at 1 voltage of 4.0 VDC. 2. Alumina = MHZ 0.4 xand 0.3applied x 0.024reverse in. 99.5% alumina. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application order otherwise to • Low profile ELECTRICAL CHARACTERISTICS (TA = 25°Cinunless noted) (Continued) optimize board space. Symbol high efficiency. • Low power loss,Characteristic ON CHARACTERISTICS • High current capability, low forward voltage drop. DC Current Gain hFE surge capability. • High for overvoltage protection. • Guardring ( IC= –10 mAdc, VCE = –1.0 Vdc ) switching. • Ultra ( IC= high-speed –100 mAdc, V CE = –1.0 Vdc ) epitaxial chip,Vdc metal • Silicon ( IC= –300 mAdc,planar VCE = –1.0 ) silicon junction. parts meet environmental • Lead-free Collector–Emitter Saturation Voltage standards of MIL-STD-19500 /228 ( IC = – 300 mAdc, IB = –30 mAdc ) product for packing code suffix "G" • RoHS Base–Emitter Saturation Voltagecode suffix "H" Halogen free product for packing ( I = – 500 mAdc, I = –50 mAdc ) C B Mechanical data Min Typ Unit Max 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. — 120 160 60 — — — 400 — — V CE(sat) — — – 1.5 Vdc V BE(sat) — — – 2.0 Vdc 0.071(1.8) 0.056(1.4) SMSMALL–SIGNAL rated flame retardant • Epoxy : UL94-V0CHARACTERISTICS 0.040(1.0) 0.024(0.6) Current–Gain — Bandwidth Product f 100 T • Case : Molded plastic, SOD-123H (I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz) , • Terminals :Plated terminals, solderable per MIL-STD-750 Output Capacitance — — MHz 0.031(0.8) Typ. 0.031(0.8) Typ. C obo — C ibo — — 105 pF NF (V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10 dB Vdc, I E2026 = 0, f = 1.0 MHz) (V CB = – 10Method Polarity : Indicated by cathode band Input Capacitance • Vdc, I C: =Any 0, f = 1.0 MHz) (V EB = –0.5 Position • Mounting Noise Figure • Weight : Approximated 0.011 gram — 18 pF Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. in order to • Low profile surface mounted applicationSOT-23 SOD-123H optimize board space. 0.146(3.7) 0.130(3.3) .106(2.70) MIL-STD-19500 /228 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. silicon junction. • Silicon epitaxial planar chip, metal.122(3.10) • Lead-free parts meet environmental standards of • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Mechanical data 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .080(2.04) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave,.070(1.78) 60Hz, resistive of inductive load. .003(0.08) For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 .004(0.10)MAX. Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .020(0.50) TSTG .012(0.30) Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 15 50 16 60 18 80 35 42 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 14 40 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 .055(1.40) .035(0.89) .083(2.10) .110(2.80) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ 0.5 Rated DC Blocking Voltage 10 Dimensions inIR inches and (millimeters) @T A=125℃ 0.9 0.92 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW68GLT1THRU Purpose Transistors FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) BCW68GLT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.