C1815(SOT 23)

WILLAS
FM120-M
C1815 THRU
FM1200-
SOT-23 Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Prod
Package outline
Features
• Batch process design, excellent power dissipation offers
SOD-123H
SOT-23
better reverse leakage current and thermal resistance.
TRANSISTOR
(NPN
)
profile surface mounted application in order to
• Low
FEATURES optimize board space.
• Low power loss, high efficiency.
Power dissipation
• High current capability, low forward voltage drop.
capability.
• High surge
Pb-Free package
is available
• Guardring for overvoltage protection.
RoHS product
for packing code suffix ”G”
• Ultra high-speed switching.
epitaxial
planar chip,code
metal suffix
silicon junction.
• Silicon
Halogen free
product
for packing
“H”
Lead-free
parts
meet
environmental
standards
of
•
Moisture Sensitivity Level 1
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. EMITTER
3. COLLECTOR
MIL-STD-19500 /228
MARKING : HF
• RoHS product for packing code suffix "G"
=25℃forunless
MAXIMUM RATINGS
(Taproduct
Halogen free
packing otherwise
code suffix "H"noted)
Mechanical data
Symbol • Epoxy : UL94-V0 rated flame retardant
Parameter
Value
: Molded plastic, Voltage
SOD-123H
• CaseCollector-Base
,
Collector-Emitter
Voltage
• Terminals
:Plated terminals,
solderable per MIL-STD-750
VCBO
VCEO
0.031(0.8) Typ.
Method 2026
Emitter-Base
Voltage
VEBO
• Polarity : Indicated by cathode band
Collector Current -Continuous
• Mounting Position : Any
Collector Power Dissipation
• Weight : Approximated 0.011 gram
IC
PC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Storage Temperature
Tstg
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise
For capacitive load, derate current by 20%
Parameter
RATINGS
60
V
50
V
5
V
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Junction Temperature
Tj
0.040(1.0)
Unit 0.024(0.6)
150
mA
200
mW
150
℃
℃
-55-150
specified)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120
SYMBOL FM120-MH
Symbol
Test conditions
Min
Typ
Max
Unit
Marking Code
12
13
14
40
14
21
28
20
30
40
100uA,
I30
V(BR)CBO
20
E 0
VRRM IC==
Collector-base
breakdown
Maximum Recurrent
Peakvoltage
Reverse Voltage
VRMS
Maximum RMS Voltage
V(BR)CEO
Collector-emitter breakdown voltage
Maximum DC Blocking Voltage
VDC
I=
C= 0.1mA, IB 0
15
60
50
16
60
18
80
35
42
56
70
50
60
80
100
50
VCB=60V, IE 0
ICBO I=
O
Collector
cut-off
current
Maximum
Average
Forward Rectified Current
Peakcut-off
Forwardcurrent
Surge Current 8.3 ms single half sine-wave
=
VCE=50V, IB 0
ICEO IFSM
Collector
superimposed on rated load (JEDEC method)
VEB= 5V, IC 0 IEBO R=
ΘJA
EmitterTypical
cut-off
current
Thermal
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
hFE
DC current gain
Operating Temperature Range
CJ
TJ
VCE= 6V, IC= 2mA
-55 to +125
130
10
100
V 150
115
120
200
105
140
150
200
V
1.0
30
0.1
uA
0.1
uA
40
120
0.1
uA
400
-55 to +150
- 65 to +175
Storage Temperature
Range
Collector-emitter
saturation
voltage
VCE(sat)TSTG IC=100mA, IB= 10mA
Base-emitter saturation
voltage
CHARACTERISTICS
=100mA,
IB= 10mA
VBE(sat)
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH V
FM1150-MH FM1200
SYMBOLICFM120-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum
Average Reverse Current at @T A=25℃ fT
Transition
frequency
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
VCE=10V, IC= 1mA,
f=30MHz
0.70
0.25
V
0.9
0.85
0.5
80
10
0.9
MHz
NOTES:
CLASSIFICATION
OF
FE reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ
andhapplied
Rank
L
H
130-200
200-400
2- Thermal Resistance From Junction to Ambient
Range
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
C1815
SOT-23 Plastic-Encap sulate Transistors
FeaturesI
——
C
hFE
1000
——
IC
design, excellent
power
dissipation offers
• Batch process16uA
COMMON
EMITTER
℃ thermal resistance.
Ta=25and
better reverse leakage current
optimize board space.
12uA
COLLECTOR CURRENT
IC
• Low power loss, high efficiency.
low forward voltage drop.
• High current capability,10uA
• High surge capability.
8uA
• Guardring for overvoltage protection.
• Ultra high-speed switching. 6uA
• Silicon epitaxial planar chip, metal4uAsilicon junction.
• Lead-free parts meet environmental standards of
3
2
1
MIL-STD-19500 /228
SOD-123H
Ta=100℃
hFE
• Low profile surface mounted application in order to
4
DC CURRENT GAIN
(mA)
14uA
Ta=25℃
0.146(3.7)
0.130(3.3)
0
0
0.071(1.8)
0.056(1.4)
IB=2uA
COMMON EMITTER
VCE= 6V
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
T =100 ℃
100
100 150
10
COLLECTOR CURRENT
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1
VCE (V)
• Epoxy : UL94-V0
VCEsat rated
—— flame
IC retardant
2000
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
500
a
Ta=25℃
VBEsat ——
IC
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
β=10
For10 capacitive load, derate current by 20%
1
10
COLLECTOR
CURREMT
RATINGS
100
IC
0.040(1.0)
0.024(0.6)
IC
0.031(0.8) Typ.
0.031(0.8) Typ.
1000
Ta=25℃Dimensions
in inches and (millimeters)
Ta=100 ℃
150
β=10
100
0.1
1
100 150
10
FM150-MH
FM160-MH
FM180-MH FM1100-MH FM1150-MH FM120
SYMBOL FM120-MH FM130-MH FM140-MH
COLLECTOR
CURREMT
IC (mA)
(mA)
VRRM
12
20
COMMON EMITTER
100
Maximum
RMS Voltage
V = 6V
13
30
1000
14
40
15
f50
——
T
16
IC
60
18
80
10
100
115
150
120
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
(MHz)
—— VBE
Maximum
Recurrent PeakIC Reverse
Voltage
150
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
10
T=
a 10
0℃
COLLECTOR CURRENT
Peak Forward Surge Current 8.3 ms single half sine-wave
T=
a 25
℃
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical
Junction Capacitance (Note 1)
1
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
1.0
30
fT
TRANSITION FREQUENCY
IC
(mA)
CE
100
-55 to +125
0
CHARACTERISTICS
600
300
-55 to +150
- 65 toCOMMON
+175 EMITTER
VCE=10V
FM120-MH10FM130-MH
FM140-MH1 FM150-MH FM160-MH
FM180-MH FM1100-MH
FM1150-MH FM1200
SYMBOL
1200
0.1
10
100
900
VF
VBE (mV)
Maximum Average Reverse Current at @T A=25℃
Cob/Cib —— VCB/VEB
@T A=125℃
Rated
50 DC Blocking Voltage
NOTES:
Ta=25 ℃
(pF)
to Ambient
CAPACITANCE
C
2- Thermal Resistance
COLLECTOR CURRENT
0.70
PC
250
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
FromCibJunction
0.50
IR
f=1MHz
IE=0/IC=0
10
Ta=25℃
COLLECTOR POWER DISSIPATION
PC (mW)
0.1
BASE-EMMITER
VOLTAGE
Maximum Forward
Voltage at 1.0A
DC
40
120
(mA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
10
0.1
Halogen
free product
for packing
code
2
4
6
8 suffix "H"
10
COLLECTOR-EMITTER VOLTAGE
0.012(0.3) Typ.
100
• RoHS product for packing code suffix "G"
Pb Free Prod
Typical Characteristics
Package outline
VCE
THRU
FM1200-
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
5
FM120-M
Cob
——
IC
Ta
0.9
0.85
(mA)
0.9
0.5
10
200
150
100
50
2012-06
0.1
0.1
WILLAS ELECTRONIC CO
0
1
REVERSE VOLTAGE
2012-0
10
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
C1815 THRU
FM1200-M
SOT-23
Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Prod
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Marking Code
Maximum Recurrent Peak Reverse Voltage
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
12
20
13
30
VRMS
14
21
28
VDC
20
30
40
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
18
10
.008(0.20)
115
150
120
200
35
42
140
60
56
70
.003(0.08)
105
50
150
200
CHARACTERISTICS
100
80
100
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
VF
Maximum Forward Voltage at 1.0A DC
80
1.0
30
TSTG
.004(0.10)MAX.
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
16
60
15
50
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
14
40
@T A=125℃
IR
NOTES:
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
0.70
0.85
0.9
0.5
.055(1.40)
.035(0.89)
.083(2.10)
Dimensions in inches and (millimeters)
0.92
10
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC CO
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
C1815 THRU
FM1200-M
SOT-23
Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Prod
SOD-123+ PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Ordering
Information:
capability, low forward voltage drop.
• High current
• High surge capability.
Device PN Packing • Guardring for overvoltage protection.
(3) (1) (2)
C1815 x
‐T switching.
G ‐WS Tape&Reel: 3 Kpcs/Reel high-speed
• Ultra
Silicon epitaxial planar chip, metal silicon junction.
•
Note: (1) Packing code, Tape & Reel Packing • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G"
(3) Halogen
CLASSIFICATION OF h
RANKcode
free product for FE packing
suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at
25℃ ambient temperature unless otherwise specified.
Single
phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking
Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak
Forward Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
superimposed on rated load (JEDEC method)
use of any product or circuit. 40
Typical Thermal Resistance (Note 2)
RΘJA
Junction Capacitance (Note 1)
120
Typical
CJ
-55
to
+125
-55 to +150
Operating Temperature Range
TJ
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
applications where a failure or malfunction of component or circuitry may directly 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum
Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
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