C945(SOT 23)

WILLAS
FM120-M+
C945 THRU
FM1200-M
SOT-23
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
TRANSISTOR
(NPN)
optimize
board space.
• Low power loss, high efficiency.
FEATURE
• High current capability, low forward voltage drop.
z
Excellent
hFE capability.
Linearity
• High surge
Guardring for overvoltage protection.
•
z
Low noise
• Ultra high-speed switching.
z
Pb-Free
is available
epitaxial planar
chip, metal silicon junction.
• Siliconpackage
Lead-free
parts
meet
environmental
standards
•
RoHS product for packing code suffix
”G”of
MIL-STD-19500 /228
for packingfor
code
suffix "G"code suffix
• RoHS product
Halogen
free product
packing
Halogen free product for packing code suffix "H"
SOT-230.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
1. BASE
2. EMITTER
3. COLLECTOR
“H”
z
Moisture Sensitivity Level 1
Mechanical data
MARKING:CR
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic,
SOD-123H
• Case
unless otherwise noted)
MAXIMUM
RATINGS
(Ta=25℃
,
terminals, solderable per MIL-STD-750 Value
Symbol • Terminals :Plated
Parameter
VCBO
VCEO
VEBO
IC
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
Method 2026
60
Collector-Base Voltage
• Polarity
: Indicated by cathode band
Collector-Emitter
Any
• Mounting Position :Voltage
• Weight
: Approximated
Emitter-Base
Voltage 0.011 gram
Collector Current -Continuous
V
Dimensions in inches and (millimeters)
50
V
5
V
150
mA
200
mW
150
℃
-55-150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Power
Dissipation
PCRatings atCollector
25℃ ambient
temperature
unless otherwise specified.
half wave,
60Hz, resistive of inductive load.
Junction
Temperature
TJSingle phase
For
capacitive
load,
derate
current by 20%
Tstg
Storage Temperature
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12
20
13
30
14
40
15
50
16
60
18
80
35
Min42
Typ 56
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
VRRM
Maximum Recurrent Peak Reverse Voltage
VRMS
Symbol
Maximum RMS Voltage
Parameter
Maximum DC Blocking Voltage
VDC
14
21
28
Test
conditions
20
30
40
50
Collector-base breakdown voltage
V(BR)CBO
IC=100uA, IE=0
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA , IB=0
50
IE=0.1mA, IC=0
5
Maximum Average Forward Rectified Current
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
Emitter-base breakdown voltage
superimposed on rated load (JEDEC method)
IFSM
V(BR)EBO
Collector
cut-offResistance
current (Note 2)
Typical Thermal
ICBORΘJA
VCB=60V, IE=0
Typical Junction
Collector
cut-offCapacitance
current (Note 1)
ICERCJ
VCE=55V,R=10MΩ
Emitter
cut-off current
Storage Temperature Range
IEBO
TSTG
VEB=5V ,
IC=0
hFE(1)
VCE=6 V ,
IC=1mA
TJ
Operating Temperature Range
DC current gain
CHARACTERISTICS
60
60
80
Max70
100
115
150
120
200
Unit105
140
V
1.0
30
40
120
-55 to +125
10
100
150
200
V
V
0.1
0.1
uA
uA
-55 to +150
- 65 to +175
130
0.1
uA
400
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
hFE(2)
VF
Maximum Forward Voltage at 1.0A DC
Collector-emitter
voltage
Maximum Average saturation
Reverse Current
at @T A=25℃VCE(sat)
Rated DC Blocking
Voltage voltage
Base-emitter
saturation
0.012(0.3) Typ.
IR
@T A=125℃
VBE(sat)
VCE=6 V ,
IC=0.1mA
40
0.50
0.70
0.9
0.85
IC=100mA, IB=10mA
0.5
0.3
V
IC=100mA, IB=10mA
10
1
V
0.92
Transition
frequency
NOTES:
fT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector output capacitance
2- Thermal Resistance From Junction to Ambient
Noise
figure
Cob
NF
VCE=6V,IC=10mA,f =30 MHz
150
MHz
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA
Rg=10kΩ,f=1kMHZ
4
3.0
pF
10
dB
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
130-200
200-400
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
C945 THRU
FM1200-M
SOT-23
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics
• Low profile surface mounted application in order to
optimize board space.
IC
a
8
•
6
Mechanical data
21uA
RoHS product for packing
code suffix "G"
Halogen free product for 18uA
packing code suffix "H"
15uA
hFE ——
1000
0.012(0.3) Typ.
IC
Ta=100℃
0.071(1.8)
0.056(1.4)
Ta=25℃
300
DC CURRENT GAIN
COLLECTOR CURRENT
24uA
MIL-STD-19500
/228
0.146(3.7)
0.130(3.3)
hFE
(mA)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Static Characteristic
12 • Guardring for overvoltage protection.
COMMON
• Ultra high-speed switching.
30uA
EMITTER
junction.
10 • Silicon epitaxial planar chip, metal silicon
℃
T =25
27uA
• Lead-free parts meet environmental standards of
100
0.040(1.0)
0.024(0.6)
12uA
• Epoxy : UL94-V0 rated flame retardant
4
• Case : Molded plastic, SOD-123H9uA
,
6uA
2 • Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
30
Method 2026
• Polarity : Indicated by cathode band
0
2
4
6
8
Position : Any
• Mounting COLLECTOR-EMITTER
VOLTAGE V
• Weight : Approximated 0.011 gram
VCEsat ——
300
CE
RATINGS
T =100℃
100
150
(mA)
IC
Ta=25℃
VRRM
12
20
VRMS
14
Peak Forward
Surge Current 8.3 ms single half sine-wave
10
10
30
superimposed on rated load (JEDEC method)
COLLECTOR CURRENT
IC
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
Cob /(Note
Cib 1)
——
(mA)
VCB / VEB
15
Operating Temperature Range
Storage Temperature Range
C
CAPACITANCE
16
60
18
10
80 Ta=100℃100
115
150
120
200
21
28
35
42
56
70
105
140
30 400
40
50
60
80
100
150
200
200
0.1
0.3
1
PC
-55 to0.25
+125
TJ
f=1MHz
1.0
30
3
40
120
——
β=10
10
COLLECTOR CURRENT
CJ
100 150
30
IC
(mA)
Ta
-55 to +150
- 65 to +175
0.20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Cib
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IR
NOTES:5
Cob
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50
0.70
0.15
0.9
0.85
0.5
0.92
10
0.10
0.05
0.00
0.3
1
REVERSE BIAS VOLTAGE
2012-06
15
50
COLLECTOR POWER DISSIPATION
PC (W)
(pF)
CHARACTERISTICS
0
0.1
14
40
RΘJA
Ta=25℃
Rated DC Blocking Voltage
13 600
30
β=10
IFSM100 150
IE=0 /IC=0
TSTG
10
Maximum
Forward Voltage at 1.0A DC
Ta=25℃
IO
3
20
VDC
Maximum Average Forward Rectified Current
1
800
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
a
Maximum DC Blocking Voltage
2012-0
IC
VBEsat ——
1000
Maximum
30 RMS Voltage
30
10
COLLECTOR CURRENT
(V)
IC
Maximum Recurrent Peak Reverse Voltage
Dimensions in inches and (millimeters)
3
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
10
0.7
12
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
100
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
VCE=6V
IB=3uA
10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
0
10
3
V
(V)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
C945
SOT-23
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-23
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.080(2.04)
Marking Code
Maximum Recurrent Peak Reverse Voltage
.070(1.78)
.083(2.10)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.110(2.80)
Method 2026
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
VRRM
12
20
13
30
14
40
15
50
16
60
18
10
115
150
120
200
.003(0.08)
80
100
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Maximum RMS Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
@T A=125℃
IR
.020(0.50)
NOTES:
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
0.50
.055(1.40)
.035(0.89)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.5
0.92
10
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.D
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
C945
SOT-23 Plastic-Encapsulate Transistors
FM120-M
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Prod
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing capability, low forward voltage drop.
• High current
surge(3)
capability.
• High
C945 x
‐T(1)G(2)‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape & Reel Packing high-speed switching.
• Ultra
Silicon
epitaxial planar chip, metal silicon junction.
•
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228 FE RANK (3)MIL-STD-19500
CLASSIFICATION OF h
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
WILLAS reserves the right to make changes without notice to any product For capacitive load, derate current by 20%
specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking
Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
for any errors or inaccuracies. Data sheet specifications and its information 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
contained are intended to provide a product description only. "Typical" parameters Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average Forward Rectified Current
which may be included on WILLAS data sheets and/ or specifications can IO
1.0
and do vary in different applications and actual performance may vary over time. Peak
Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
WILLAS does not assume any liability arising out of the application or 40
Typical Thermal Resistance (Note 2)
RΘJA
use of any product or circuit. 120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
TJ
- 65 to +175
Storage Temperature Range
TSTG
WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200life‐saving implant or other applications intended for life‐sustaining or other related 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum
Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC Blocking Voltage
or indirectly cause injury or threaten a life without expressed written approval NOTES:
of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal
Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
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