WILLAS FM120-M+ THRU MMBT2222ATT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers NPN Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. These transistors are efficiency. designed for general purpose amplifier loss, high • Low power applications. Theycapability, are housed the SC−89 package lowinforward voltage drop. which • High current is designed for low power surface mount applications. capability. • High surge • Guardring for overvoltage protection. Features • Ultra high-speed switching. planar chip, metal silicon junction. compliance with RoHS requirements. • We• Silicon declareepitaxial that the material of product partsismeet environmental standards of • Lead-free Pb-Free package available 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SC-89 MIL-STD-19500 /228 RoHS product for packing code suffix ”G” • RoHS product for packing code suffix "G" Halogen freefree product forfor packing Halogen product packingcode codesuffix suffix“H” "H" Moisture Sensitivity Level Mechanical data1 0.031(0.8) Typ. ina : UL94-V0INFORMATION rated flame retardant • Epoxy ORDERING • Case : Molded plastic, SOD-123H Device Maring Shipping , • Terminals :Plated terminals, solderable per MIL-STD-750 ry COLLECTOR 3 1 BASE 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. MMBT2222ATT1 Method 1P2026 3000 / Tape & Ree l • Polarity : Indicated by cathode band • Mounting Position : Any Symbol Rating • Weight : Approximated 0.011 gram Max Unit im Collector−Emitter Voltage VCEO 40 Vdc MAXIMUM ELECTRICAL CHARACTERISTICS Collector−Base Voltage RATINGS AND V 75 Vdc CBO Ratings at 25℃ ambient temperature unless otherwise specified. Emitter−Base Voltage VEBO 6.0 Single phase half wave, 60Hz, resistive of inductive load. Collector Current − Continuous I 600 C For capacitive load, derate current by 20% Symbol Maximum Peak Reverse Voltage Total Recurrent Device Dissipation (Note 1) Maximum Voltage TA RMS = 25°C Maximum DC Blocking Voltage Thermal Resistance, Junction−to−Ambient Maximum Average Forward Rectified Current Vdc 1P M G G FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH THERMAL CHARACTERISTICS RATINGS Marking Code Characteristic MARKING DIAGRAM mAdc Pr el PD VRRM RqJA VDC VRMS Max12 15020 Unit 13 30 mW 14 40 21 28 35 83320 30 °C/W 40 50 14 IO Operating and Storage Junction TJ, Tstg −55 to +150 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Temperature Range 15 50 16 60 1P42 M60 G °C superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Typical Junction Capacitance (Note 1) Operating Temperature Range CJ Characteristic TJ Storage Temperature Range OFF CHARACTERISTICS -55 to +125 Symbol 1 18 80 1.0 30 10 100 115 150 56 70 Code 105 = Specific Device = Date 80 Code 100 150 = Pb−Free Package 120 200 Volts 140 Volts 200 Volts Amp Amp 40 120 Min ℃/W PF Max -55 to +150 Unit - 65 to +175 TSTG ℃ ℃ Collector −Emitter Breakdown Voltage (Note 1) V(BR)CEO 40 − Vdc CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT (IC = 1.0 mAdc, IB = 0) Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Collector −Base Breakdown Voltage V(BR)CBO 75 − Vdc 0.5 Maximum Average Reverse Current at @T A=25℃ (IC = 10 mAdc, IE = 0) IR mAm 10 @T A=125℃ Rated DC Blocking Voltage Emitter −Base Breakdown Voltage V(BR)EBO 6.0 − Vdc NOTES:(IE = 10 mAdc, IC = 0) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Base Cutoff Current 2 EMITTER Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA = 25°C) 2- Thermal Resistance From to Ambient (VCE = 60 Vdc, VEBJunction = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 2014-01 IBL − 20 nAdc ICEX − 100 nAdc WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222ATT1 FM1200-M+ General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SOD-123H 35 50 0.146(3.7) 75 0.130(3.3) 100 40 VCE(sat) VBE(sat) fT − − − − − − − 0.3 1.0 0.6 − 1.2 2.0 250 − − 8.0 0.031(0.8) Typ. Cobo ina Current −Gain :−UL94-V0 Bandwidth Product rated flame retardant • Epoxy (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) • Case : Molded plastic, SOD-123H , Output Capacitance • Terminals :Plated terminals, solderable per MIL-STD-750 (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Method 2026 Input •Capacitance Polarity : Indicated by cathode band (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) • Mounting Position : Any Input Impedance • : Approximated = 10 Vdc, IC = 10 mAdc,0.011 f = 1.0gram kHz) (VCEWeight HFE ry ON CHARACTERISTICS (Note 2) excellent power dissipation offers • Batch process design, better reverse leakage current and thermal resistance. DC Current Gain Low profile surface mounted application in order to • (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = optimize 1.0 mAdc,board VCE =space. 10 Vdc) powerVloss, high efficiency. 10 mAdc, (IC •=Low CE = 10 Vdc) current capability, (IC •=High 150 mAdc, VCE = 10 Vdc)low forward voltage drop. surge V capability. 500 mAdc, (IC •=High CE = 10 Vdc) Guardring for overvoltage protection. • Collector −Emitter Saturation Voltage high-speed (IC •=Ultra 150 mAdc, IB = 15switching. mAdc) epitaxial planar 500 mAdc, IB = 50 mAdc)chip, metal silicon junction. (IC •=Silicon • Lead-free parts meet environmental standards of Base −Emitter Saturation /228 Voltage MIL-STD-19500 (IC•=RoHS 150 mAdc, IB for = 15 mAdc)code suffix "G" product packing (IC = 500 mAdc, IB = 50 mAdc) Halogen free product for packing code suffix "H" SMALL− SIGNAL CHARACTERISTICS Mechanical data − 0.012(0.3) Typ. Vdc 0.071(1.8) 0.056(1.4) Vdc 0.040(1.0) 0.024(0.6) MHz 0.031(0.8) Typ. CDimensions − 30 ibo in inches and (millimeters) 0.25 1.25 pF kW im hie pF Pr el Voltage Feedback Ratio − 4.0 X 10− 4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICShre (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Ratings at 25℃ ambient temperature unless otherwise specified. Smallphase −Signal Gain resistive of inductive load. hfe 75 375 − Single halfCurrent wave, 60Hz, (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) For capacitive load, derate current by 20% Output Admittance hoe 25 200 mmhos FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Marking Code 12 13 14 15 16 18 10 115 120 Noise Figure − 80 4.0 100 dB150 20 30 40 50NF 60 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS SWITCHING CHARACTERISTICS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Delay Time Maximum Average Forward Rectified Current (VCC = 3.0IOVdc, VBE = − 0.5 Vdc, mAdc, IB1 = 15 mAdc) IC = 150 Rise Time Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Storage Time superimposed on rated load (JEDEC method) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IR = 15 mAdc) B2 Typical Thermal Resistance (Note 2) ΘJA Fall Time td ts 1.0− − 30 − tf 40− tr Typical Junction Capacitance J 1. Device mounted on FR4(Note glass1)epoxy printed circuitCboard using the minimum recommended footprint.120 2. Pulse Temperature Test: Pulse Width Operating Range≤ 300 ms, Duty Cycle ≤ 2.0%. TJ Storage Temperature Range -55 to +125 10 25 225 60 Amps ns Amps ns ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2014-01 WILLAS ELECTRONIC CORP. Volts mAmp WILLAS FM120-M+ MMBT2222ATT1 THRU General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SC-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" Mechanical data .040(0.95) .030(0.75) 0.031(0.8) Typ. ina • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ry .067(1.70) .059(1.50) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .067(1.70) .059(1.50) MIL-STD-19500 /228 .012(0.30)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Method 2026 0.012(0.3) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) RATINGS Marking Code .008(0.20) 13 14 .004(0.10) 30 40 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 VDC 20 30 .043(1.10) Maximum DC Blocking Voltage .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ NOTES: 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 .031(0.80) .024(0.60) Pr eli m MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp .013(0.33) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .009(0.23) 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2014-01 Rev.DCORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222ATT1 General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low powerDevice PN Packing 0.130(3.3) • High current capability, low (1) forward voltage drop. MMBT2222ATT1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High • Guardring for overvoltage protection. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.