WILLAS FM120-M+ THRU SE4812LT1 FM1200-M+ 30V N-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low V profile = 30V DS board space. optimize Low power loss, efficiency. , Vgshigh @10V, [email protected] = 38mΩ RDS(ON) High current capability, low forward voltage drop. RDS(ON) , [email protected], Ids@5A = 52mΩ High surge capability. • • • • Guardring for overvoltage protection. • Ultra high-speed switching. Features • Silicon epitaxial planar chip, metal silicon junction. Advancedparts trench process technologystandards of meet environmental • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) High Density Cell Design For Ultra Low On-Resistance MIL-STD-19500 /228 Highproduct Power and Currentcode Handling Capability for packing suffix "G" • RoHS Halogen free product for packing code suffix "H" Pb-Free package Mechanical data is available SOT-23 0.040(1.0) 0.024(0.6) RoHS product forflame packing code suffix ”G” : UL94-V0 rated retardant • Epoxy Halogen free product for packing code suffix “H” : Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 N - Channel 0.031(0.8) Typ. 3 0.031(0.8) Typ. Method 2026 ▼ Simple Drive Requirement • Polarity : Indicated by cathode band ▼ Small Package Position : Any Outline • Mounting • Weight : Approximated 0.011 gram ▼ Surface Mount Device Dimensions in inches and (millimeters) 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, Information 60Hz, resistive of inductive load. Ordering For capacitive load, derate current by 20% Device Marking Shipping RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage 3000/Tape&Reel 12 20 VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC SE4812LT1 Marking Code N48 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 Volts 20 30 40 50 60 80 100 150 200 Volts IO ThermalIFSM Characteristics Peak ForwardMaximum Surge Current Ratings 8.3 ms singleand half sine-wave Maximum Average Forward Rectified Current o (TA = 25 C unless superimposed on rated load (JEDEC method) Symbol Typical Thermal Resistance (Note 2) Parameter Operating Temperature Range V GS Storage Temperature Range ID RΘJA DS Typical Junction V Capacitance (Note 1) Drain-Source Voltage CJ TJ Gate-Source Voltage 1.0 otherwise 30 Amps noted) 40 120 -55 to +125 Amps Limit Unit - 65 to +175 ℃/W PF 30 V -55 to +150 TSTG ℃ ± 20 Continuous Drain Current ℃ 6.9 A FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 1) IDMCHARACTERISTICSPulsed DrainSYMBOL 30 Current VF Maximum Forward Voltage at 1.0A DC 0.50 Maximum Average Reverse Current at @T A=25℃ PD Rated DC Blocking Voltage IR Dissipation Maximum Power @T A=125℃ 0.70 TA = 25oC 0.5 TA = 75oC 10 0.85 0.9 0.92 2 UNIT Volts W mAmps 1.44 NOTES: TJ, Tstg Operating Junction and Storage Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. RθJC 24 Junction-to-Case Thermal Resistance 2- Thermal Resistance From Junction to Ambient RθJA o -55 to 150 Junction-to-Ambient Thermal Resistance (PCB mounted) 2) 62.5 o C C/W Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2 2oz Cu PCB board 2. 1-in 3. Guaranteed by design; not subject to production testing 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE4812LT1 THRU FM1200-M+ 30V N-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers ELECTRICAL CHARACTERISTICS better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimizeParameter board space. Test Condition Symbol • Low power loss, high efficiency. Static • High current capability, low forward voltage drop. High surge capability. VGS = 0V, ID = 250uA BV•DSS Drain-Source Breakdown Voltage • Guardring for overvoltage protection. VGS = 4.5V, ID = 5A RDS(on) Drain-Source On-State Resistance switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. V = 10V, I = 8.5A RDS(on) Drain-Source On-State Resistance GS D • Lead-free parts meet environmental standards of MIL-STD-19500 /228 VGS(th) Gate Threshold Voltage SOD-123H Min IDSS Gate Voltage Drain Halogen Zero free product for packing codeCurrent suffix "H" VDS = 24V, VGS = 0V Mechanical data IGSS Gate Body Leakage VGS = ± 20V, VDS = 0V V 35.0 tr 1.5 3 V 1 uA + 100 nA 0.040(1.0) 0.024(0.6) 15.4 3.1 Turn-On Delay Time 9 Turn-On Rise Time 14 Input Capacitance Coss Capacitance Maximum RecurrentOutput Peak Reverse Voltage 5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Transfer CapacitanceVRMS Maximum DC Blocking Voltage VDC Maximum CrssRMS Voltage Reverse Source-Drain Diode IS Max. Diode Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave V Diode Forward Voltage SD on rated superimposed load (JEDEC method) IFSM Note: Pulse test: pulse width 2% Typical Thermal Resistance (Note 2) <= 300us, duty cycle<= RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 12V = 15V, 13 V 14 DS GS = 0V 20 30 40 15 50 16 60 18 80 14 21 28 35 42 56 20 30 40 50 60 80 f = 1.0 MHz IO Maximum Average Forward Rectified Current ns 30 f Ciss nC 4.2 Ratings at 25℃ ambient temperature unless otherwise specified.ID = 1A, VGEN = 10V Delay Time Singletd(off) phase half Turn-Off wave, 60Hz, resistive of inductive load. RG = 6Ω For capacitive load, derate current by 20% t Turn-Off Fall Time Marking Code 20 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL VDDCHARACTERISTICS = 15V, RL = 15Ω RATINGS S 0.031(0.8) Typ. 13 • Mounting Position : Any Qgd Gate-Drain Charge • Weight : Approximated 0.011 gram mΩ 38.0 Method Total Gate2026 Charge : Indicated by cathode band Q• gsPolarity Gate-Source Charge td(on) 52.0 0.071(1.8) 0.056(1.4) 22.0 1 VDS = 15V, ID = 8.5A VGS = 10V Unit 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant VDS = 5V, ID = 6.9A gfs Forward Transconductance • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 3) , Dynamic • Terminals :Plated terminals, solderable per MIL-STD-750 Qg Max 30 VDS =VGS, ID = 250uA • RoHS product for packing code suffix "G" Typ 0.146(3.7) 0.130(3.3) 610 10 100100 77 70 100 1.0 30 IS = 1A, VGS = 0V 40 120 -55 to +125 115 150 120 pF 200 Volts 105 140 Volts 150 200 Volts Amps 3 1.3 A Amps V ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE4812LT1 FM1200-M+ 30V N-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline TYPICAL ELECTRICAL CHARACTERISTICS Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Id, DRAIN CURRENT(A) Id DRAIN CURRENT(A) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H V gs , G A T E - T O - S O U R C E V O L T A G E ( V ) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. V d s , D R A I N - T O - S O U RC E V O0.031(0.8) L T A G E (Typ. V) Method 2026 1. Transfer Characteristics • PolarityFigure : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Figurein2. On–Region Characteristics Dimensions inches and (millimeters) RATINGS R d s ( o n )- O n - R e s i s t a n ce ( Ω) R d s ( o n ) - On - R e s i s t a n c e ( Ω) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.5 0.4 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) I d - D2) r a i n C u rr e n t ( A ) RΘJA Typical Thermal Resistance (Note CJ Typical Junction Capacitance (Note 1) Figure 3.Range On–Resistance versus Drain Operating Temperature TJ Current Storage Temperature Range 0.3 14 40 15 50 16 60 0.2 28 35 42 18 10 80 100 56Id=5A 70 40 0.1 50 60 80 0 3 3.2 -55 to +125 100 115 150 120 200 Volts 105 140 Volts 150 200 Volts 1.0 30 Amps Amps 4 3.4 3.6 3.8 V g s40 - G a t e - t o - S o ur c e V o l t a g e ( V ) 120 ℃/W PF -55 +150 Figure 4. On-Resistance vs.toGate-to-Source Voltage - 65 to +175 TSTG ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE4812LT1 FM1200-M+ 30V N-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .080(2.04) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .055(1.40) .035(0.89) .086(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Halogen free product for packing code suffix "H" Mechanical data .020(0.50) .012(0.30) -55 to +125 TJ Dimensions in inches Operating Temperature Range Storage Temperature Range TSTG CHARACTERISTICS 40 120 Amps Amps ℃/W PF -55 to +150 and (millimeters) ℃ - 65 to +175 0.037 0.95 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.037 Maximum Forward Voltage at 1.0A DC VF 0.95 Maximum Average Reverse Current at @T A=25℃ IR Rated DC Blocking Voltage 1.0 30 0.50 0.70 0.85 0.5 10 @T A=125℃ 0.9 0.92 Volts mAmps NOTES: 0.079 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012-10 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. 30V N-Channel Enhancement-Mode MOSFET SE4812LT1 Ordering Information: Device PN SE4812LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.