BSS138LT1(SOT 23)

WILLAS
FM120-M+
THRU
BSS8LT1
FM1200-M+
200 mAmps,
50 Volts
Power
MOSFET
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
high efficiency.
• Low power loss,SOT–23
N–Channel
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
surge capability.
• High
Typical
applications
are dc–dc converters, power management in
for overvoltage protection.
• Guardring
portable
and battery–powered
products such as computers, printers,
high-speed switching.
• Ultracards,
PCMCIA
cellular and cordless telephones.
• Silicon epitaxial planar chip, metal silicon junction.
Threshold
Voltage
(V GS(th): 0.5V...1.5V)
• Low
it ideal for low
parts
meet environmental
standards makes
of
• Lead-free
MIL-STD-19500
/228
voltage applications
• RoHS product for packing code suffix "G"
• Miniature
SOT–23 Surface Mount Package saves board space
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical
packagedata
is available
• Pb-Free
0.040(1.0)
0.024(0.6)
: UL94-V0
flame
retardant
• Epoxy
RoHS
product
for rated
packing
code
suffix ”G”
plastic,for
SOD-123H
• Case : Molded
Halogen
free product
packing code suffix “H”
,
• Terminals :Plated terminals, solderable per MIL-STD-750
SOT –23
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
N - Channel
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
2
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
J1
70
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
IO
Maximum Average Forward Rectified Current
1.0
30
MAXIMUM RATINGS (TA = 25 o C unless otherwise
noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Rating
Typical Thermal Resistance (Note 2)
Drain–to–Source Voltage
Typical Junction Capacitance (Note 1)
Gate–to–Source Voltage – Continuous
Operating Temperature Range
DrainTemperature
Current
Storage
Range
– Continuous @ TA = 25°C
– Pulsed Drain
Current (tp ≤ 10 µs)
CHARACTERISTICS
Maximum
Forward
Voltage at@
1.0A
Total Power
Dissipation
TADC
= 25°C
IFSM
Symbol
RΘJA
VDSS
CJ
VGSTJ
TSTG
ID
IDM
SYMBOL
PD VF
Maximum
Average
at @T A=25℃ T T
Operating
and Reverse
Storage Current
Temperature
J, stgIR
@T A=125℃
Unit
50
Vdc
± 20
Vdc
-55
to +125
mA
225
mW 0.50
RθJA
556
°C/W
1- Measured
at 1Lead
MHZTemperature
and applied reverse
voltage of 4.0 VDC.
Maximum
for Soldering
TL
260
°C
Purposes,
for 10
seconds
2- Thermal
Resistance
From
Junction to Ambient
2012-06
2012-10
115
150
120
200
Volts
105
140
Volts
150
200
Volts
Amps
J1 = Device Code
M = Month Code
Amps
℃/W
PF
ORDERING INFORMATION
-55 to +150
- 65 to +175 Package
Device
℃
0.70
0.85
0.5
10
℃
Shipping
200
BSS138LT1
SOT–23
3000 Tape & Reel
800
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
°C
Thermal Resistance – Junction–to–Ambient
NOTES:
40
120
– 55 to
150
RatedRange
DC Blocking Voltage
Value
10
100
M
MARKING DIAGRAM
& PIN ASSIGNMENT
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
1
For capacitive load, derate current by 20%
0.9
0.92
UNIT
Volts
mAmps
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS8LT1
FM1200-M+
200 mAmps,
50 Volts
Power
MOSFET
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
ELECTRICAL
CHARACTERISTICS
(TA = 25°C unless otherwise noted)
high efficiency.
• Low power loss,
forward voltage drop.
• High current capability, lowCharacteristic
• High surge capability.
OFF CHARACTERISTICS
• Guardring for overvoltage protection.
Breakdown
Voltage
Ultra high-speed
switching.
•Drain–to–Source
(VGS = 0epitaxial
Vdc, ID =planar
250 µAdc)
chip, metal silicon junction.
• Silicon
Lead-free
parts Drain
meet Current
environmental standards of
•Zero
Gate Voltage
0.146(3.7)
0.130(3.3)
Symbol
V(BR)DSS
IDSS
MIL-STD-19500
/228
(VDS = 25 Vdc, VGS
= 0 Vdc)
packing
code suffix "G"
• RoHS
(VDS =product
50 Vdc,for
VGS
= 0 Vdc)
Halogen free product for packing code suffix "H"
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Mechanical data
ON CHARACTERISTICS (Note 1.)
• Epoxy : UL94-V0 rated flame retardant
Gate–Source Threshold Voltage
SOD-123H
• Case
(VDS =: Molded
VGS, ID =plastic,
1.0 mAdc)
,
•Static
Terminals :Plated terminals, solderable per MIL-STD-750
Drain–to–Source On–Resistance
(VGS = 2.75Method
Vdc, ID <2026
200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0
Vdc, ID = by
200cathode
mAdc) band
• Polarity
: Indicated
0.012(0.3) Typ.
Min
Typ
Max
Unit
50
–
–
Vdc
–
–
–
–
0.1
0.5
–
–
±0.1
0.071(1.8)
0.056(1.4)
µAdc
µAdc
0.040(1.0)
0.024(0.6)
VGS(th)
0.5
–
1.5
0.031(0.8) Typ.
rDS(on)
Transconductance
Mounting
Position : Any
•Forward
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
• Weight
: Approximated 0.011 gram
Vdc
0.031(0.8) Typ.
–
5.6
10
– (millimeters)
3.5
Dimensions– in inches and
gfs
Ohms
100
–
–
mmhos
–
40
50
pF
–
12
25
–
3.5
5.0
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS AND
CHARACTERISTICS
(VDSELECTRICAL
= 25 Vdc, VGS = 0,
f = 1 MHz)
Ciss
Input Capacitance
RatingsOutput
at 25℃Capacitance
ambient temperature unless otherwise
specified.
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
Single phase half wave, 60Hz, resistive of inductive load.
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
For capacitive load, derate current by 20%
SWITCHING CHARACTERISTICS
(Note 2.) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
UNIT
Delay Time
td(on)
Marking Turn–On
Code
12
13
14
15
16 –
18 –
10 20
115 ns 120
(VDD = 30 Vdc, ID = 0.2 Adc,)
20
30
40
50
60–
80 –
100 20
150
200
Maximum
Recurrent
PeakTime
Reverse Voltage
Volts
VRRM
Turn–Off
Delay
td(off)
Volts
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
1. Pulse
Test: Pulse Width ≤ 300 µs, Duty CycleVRMS
≤ 2%.
Volts
2. Switching
characteristics
are independent of V
operating
junction
temperature.
Maximum
DC Blocking
Voltage
20
30
40
50
60
80
100
150
200
DC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS8LT1
FM1200-M+
200 mAmps,
50 Volts
Power
MOSFET
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
CHARACTERISTICS
dissipationELECTRICAL
offers
• Batch process design, excellent powerTYPICAL
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
0.8
optimize
board space.
0.9
•
MIL-STD-19500
/228
0.3
RoHS product for packing code suffix "G"
0.2
Halogen
free product for packing code suffix "H"
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VGS = 3.5 V
TJ =loss,
25°C high efficiency.
• Low power
0.7
• High current capability, low forward voltage drop.
VGS = 3.25 V
• High
0.6 surge capability.
• Guardring for overvoltage protection.
VGS = 3.0 V
0.5 high-speed switching.
• Ultra
VGS = 2.75 V
epitaxial planar chip, metal silicon junction.
• Silicon
0.4
• Lead-free parts meet environmental standards of
VGS = 2.5 V
Mechanical
data
0.1
0.7
150°C
0.071(1.8)
0.056(1.4)
0.5
0.4
0.3
0.2
0.040(1.0)
0.024(0.6)
0
0.5
0.031(0.8) Typ.
1.5
2
2.5
3
3.5
0.031(0.8) Typ.
4
4.5
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Method 2026
Dimensions in inches and (millimeters)
1.25
ID = 1.0 mA
2
RATINGS
1.2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
CHARACTERISTICS
ID = 0.8 A
1.8 MAXIMUM RATINGS AND ELECTRICAL
1.125
Ratings at 25℃ ambient temperature unless otherwise specified.
1.6
Single phase half wave, 60Hz, resistive of inductive load.
VGS = 4.5 V
For capacitive1.4
load, derate current by 20%
1
ID = 0.5 A
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
1 Peak Reverse Voltage
Maximum Recurrent
12
20
VRRM
13
30
Maximum RMS0.8
Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
0.6
-55Forward Rectified
-5 Current
Maximum Average
45
95
14
0.875
40
28
40
0.75
-55
145
IO
TJ, JUNCTION TEMPERATURE
(°C)
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
15
50
Variation with
TemperatureRΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Typical Junction Capacitance (Note 1)
CJ
10
TJ
VDS = 40 V
J
8
NOTES:
115
150
42
56
70
105
60
80
100
150
-5
45
95
70
1.020
TJ, JUNCTION TEMPERATURE (°C)
30
120
120
200
Volts
140
Volts
200
Volts
145
Amps
Amps
Figure 4. Threshold Voltage Variation
with
40 Temperature
120
-55 to +125
℃/W
PF
-55 to +150
℃
- 65 to +175
VF
6
0.50
0.70
℃
0.85
0.5
IR
10
0.9
0.92
Volts
mAmps
4
ID = 200 mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
10
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
@T A=125℃
18
80
35
TSTG
T = 25°C
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
16
60
50
-30
superimposed on rated load
(JEDEC3.
method)
Figure
On–Resistance
-55°C
0.6
0
• Polarity : Indicated by cathode band
Position : Any
• Mounting
2.2
• Weight : Approximated 0.011 gram
25°C
0.012(0.3) Typ.
0.1
• Epoxy : UL94-V0 rated flame retardant
0
2
4
5
6
7
8
9
10
1
3 SOD-123H
plastic,
• Case0: Molded
,
V
,
DRAIN-TO-SOURCE
VOLTAGE
(VOLTS)
DS terminals, solderable per MIL-STD-750
• Terminals :Plated
0.146(3.7)
0.130(3.3)
2
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS8LT1
FM1200-M+
200 mAmps,
50 Volts
Power
MOSFET
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
TYPICAL ELECTRICAL CHARACTERISTICS
• Batch process design, excellent power dissipation offers
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
V
optimize Vboard
space.
GS = 2.5
9
• Low power loss, high efficiency.
8
capability, low forward voltage drop.
• High current
capability.
• High surge
7
• Guardring for overvoltage protection.
6
switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon
5
• Lead-free parts meet environmental standards of
4
MIL-STD-19500
/228
• RoHS3product for packing code suffix "G"
Halogen free product for packing code suffix "H"
2
Mechanical
data
150°C
25°C
-55°C
• Epoxy1 : UL94-V0 rated flame retardant
0.05
0.15
0
0.1
0.2
• Case : Molded plastic,I SOD-123H
,
DRAIN
CURRENT
(AMPS)
D
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
better reverse leakage current and thermal resistance.
profile surface mounted application in order to
• Low 10
6
5
RATINGS
2.5
4
Maximum Recurrent Peak Reverse Voltage
VRRM
12
-55°C
20
Maximum RMS Voltage
VRMS
14
1.5
13
30
21
0.35 0.420 0.45 30
0.3 VDC
0.5
Maximum Average Forward Rectified
IO
ID,Current
DRAIN CURRENT (AMPS)
Peak Forward Surge Current 8.3 ms single half sine-wave
Figure 8. On–Resistance versusIFSM
Drain Current
0
0.1
0.05
2
1
0.15
0.2
0.25
Storage Temperature Range
I D , DIODE CURRENT (AMPS)
-55 to +125
TJ
Operating Temperature Range
TSTG
TJ = 150°C
25°C
CHARACTERISTICS
VGS = 10 V
4
VF
2.5
25°C
2
14
40
1.5
28
1
40 0
15
50
16
60
18
80
10
100
35
42
56
70
120
200
Volts
140
Volts
60
150 0.45 200
0.15 0.2 800.25 0.31000.35 0.4
0.5
ID1.0
, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance
versus Drain Current
30
Volts
℃/W
40
120
120
Amps
Amps
PF
-55 to +150
℃
- 65 to +175
0.70
℃
0.6
0.8
1.0
1.2
0
0.9
0.92
Volts
mAmps
Ciss10
Coss
20
2- Thermal Resistance From Junction to Ambient
0.85
0.5
60
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.4
115
150
-55°C
105
50 0.1
0.05
0.50
IR
@T A=125℃
0.2
150°C
3
40
0
0.25
Dimensions in inches and (millimeters)
100
0.01
0.001
0.2
ID, DRAIN CURRENT (AMPS)0.031(0.8) Typ.
-55°C
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.15
0.1
0.040(1.0)
0.024(0.6)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
80
Maximum Forward Voltage at 1.0A DC
NOTES:
CJ
Typical Junction 1Capacitance (Note 1)
0.05
0
RΘJA
Typical Thermal Resistance (Note 2)
0.1
-55°C
4.5
superimposed on rated load (JEDEC method)
25°C
3
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
2
1
Maximum DC Blocking
Voltage
0.071(1.8)
0.056(1.4)
3.5
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃4 ambient temperature unless otherwise specified.
Single phase 3.5
half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
3
25°C
Marking Code
150°C
0.012(0.3) Typ.
Figure 7. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
4.5 MAXIMUM
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
150°C
5
VGS = 2.75 V
7
Figure
6. On–Resistance versus Drain Current
Method 2026
• Polarity : Indicated by cathode band
6
• MountingVPosition
GS = 4.5 V: Any
5.5
• Weight : Approximated 0.011 gram
SOD-123H
8
Crss
0
5
10
15
20
25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
2012-06
2012-10
Figure 11. Capacitance
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BSS8LT1
FM1200-M+
200 mAmps,
50 Volts
Power
MOSFET
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
.006(0.15)MIN.
• Low profile surface mounted application in order to SOT-23
optimize board space.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.122(3.10)
• Guardring for overvoltage protection.
.106(2.70)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.110(2.80)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.086(2.10)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.008(0.20)
Method 2026
.080(2.04)
• Polarity : Indicated by cathode
band
.070(1.78)
• Mounting Position : Any
Dimensions in inches and (millimeters)
.003(0.08)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.004(0.10)MAX.
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
.020(0.50)
20
VDC
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO.012(0.30)
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-55 to +125
40
120
0.037 0.95
- 65 to +175
Amps
Amps
℃/W
PF
-55 to +150
℃
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
2012-10
0.037
0.95
VF
Maximum Forward Voltage at 1.0A DC
1.0
30
Dimensions in inches and (millimeters)
RΘJA
CJ
Operating Temperature Range
Rated DC Blocking Voltage
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.50
IR
0.70
0.079
2.0
0.85
0.5
10
0.9
0.92
Volts
mAmps
0.035
0.9
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
Power MOSFET 200 mAmps, 50 Volts
BSS8LT1
Ordering Information: Device PN BSS138LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10
WILLAS ELECTRONIC CORP.
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