WILLAS FM120-M+ SE2301THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. P-Channel 20-V(D-S) MOSFET capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. FEATURE • Lead-free parts meet environmental standards of TrenchFET Power MOSFET MIL-STD-19500 /228 RoHS product for packing code suffix "G" • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-23 Halogen free product for packing code suffix "H" 1. GATE Mechanical data 2. SOURCE APPLICATIONS • Epoxy : UL94-V0 rated flame retardant z Load Portable Devices : Moldedfor plastic, SOD-123H • CaseSwitch , z DC/DC Converter • Terminals :Plated terminals, solderable per MIL-STD-750 z Pb-Free package is available Method 2026 • Polarity : Indicated cathodecode band suffix ”G” RoHS product forby packing Mountingfree Position : Any •Halogen product for packing code suffix “H” • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 3. DRAIN 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MARKING:MAXIMUM S1 RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol MaximumMaximum Average Forward Rectified ratings (TCurrent a=25℃ unlessIOotherwise noted) Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) Drain-Source Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Gate-Source Voltage Operating Temperature Range ContinuousRange Drain Current Storage Temperature Symbol RΘJA VDS -20 VGS ±8 CJ -55 to +125 TJ TSTG Pulsed Drain Current CHARACTERISTICS SYMBOL Continuous Source-Drain Diode Current Maximum Forward Voltage at 1.0A DC Maximum Power Dissipation VF Maximum Average Reverse Current at @T A=25℃ IR NOTES: Junction Temperature Storage Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 40 120 Am Am Unit ℃/W V ID -2.3- 65 to +175 -55 to +150 IDM -10 A PF ℃ ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN I -0.72 Resistance from Junction to Ambient(t ≤5s) @T A=125℃ Rated DCThermal Blocking Voltage 1.0 Value 30 IFSM S PD 0.50 0.70 0.35 0.85 0.5 R θJA 357 TJ 150 Tstg -55 ~+150 10 W 0.9 0.92 Vol ℃/W mAm ℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2301THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to • Lowcharacteristics Electrical (Ta=25℃ unless otherwise noted) optimize board space. • Low power loss, high efficiency. Parameter Symbol Test Condition • High current capability, low forward voltage drop. Static• High surge capability. for overvoltage protection. • Guardring Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA • Ultra high-speed switching. VDS =VGS, ID =-250µA Gate-source threshold VGS(th)junction. epitaxialvoltage planar chip, metal silicon • Silicon Lead-free parts meet environmental standards of • Gate-source leakage I VDS =0V, VGS =±8V GSS MIL-STD-19500 /228 RoHS product for packing code suffix "G" • voltage drain current IDSS Zero gate Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) Min Typ -20 -1 VGS =-2.5V, ID =-2.0A • Epoxy : UL94-V0 rated flame retardant a Forward transconductance gfs VDS =-5V, ID =-2.8A : Molded plastic, SOD-123H • Case , b • Terminals :Plated terminals, solderable per MIL-STD-750 Dynamic 0.110 Input capacitance Method 2026 Gate resistance VDS =-10V,VGS =0V,f =1MHz Turn-on delay time td(on) VRRM Rise time Maximum RMS Voltage tr VRMS Maximum Blocking Turn-offDC delay timeVoltage td(off)VDC Maximum Average Forward Rectified Current Fall time tf Peak Forward Surgebody Current 8.3 mscharacteristics single half sine-wave Drain-source diode superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) a Operating Temperature Range current IO IFSM IS RΘJA CJ Pulse diode forward current ISM TJ Body diode voltage VSD Storage Temperature Range Notes : S 0.031(0.8) Typ. pF 75 5.5 10 3.3 6 nC 0.7 1.3 TSTG CHARACTERISTICS 12 20 13 30 14 40 15 50 16 60 11 80 20 100 10 115 150 120 200 Vol 14 21 28 35 42 35 56 6070 105 140 Vol 20 30 40 50 60 80 30 100 50 150 200 Vol 10 20 VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω TC=25℃ 18 1.0 30 - 65 to +175 IS=-0.7A ns Am Am 40 120 -55 to +125 -0.8 -1.3 ℃/W PF A -55-10 to +150 -1.2 ℃ ℃ V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ b.Guaranteed by design, not subject to productionIRtesting. Rated DC Blocking Voltage Ω 0.040(1.0) 0.142 0.024(0.6) 55 g Maximum Recurrent Peak Reverse Voltage Typical Thermalsource-drain Resistance (Note 2) Continuous diode 0.112 FM1100-MH FM1150-MH FM1200-MH UN =1MHz FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH 6.0 Ω RSYMBOL fFM120-MH Marking Code µA 405 Ratings at 25℃ ambient temperature unless otherwise specified. VDS =-10V,VGS =-2.5V,ID =-3A Gate-source charge Qgs Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Gate-drain charge Qgd RATINGS -1 Dimensions in inches and (millimeters) VDS =-10V,VGS =-4.5V,ID =-3A Total gate charge g MAXIMUM RATINGS AND Q ELECTRICAL CHARACTERISTICS nA 6.5 0.031(0.8) Typ. Ciss • Polarity : Indicated by cathode band Output capacitance Coss • Mounting Position : Any Reverse transfer capacitance Crss • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) ±100 VDS =-20V, VGS =0V 0.090 RDS(on) Units 0.012(0.3) Typ. V -0.4 VGS =-4.5V, ID =-2.8A Mechanical data a Drain-source on-state resistance Max @T A=125℃ 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2301 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Output Characteristics optimize board space. Transfer Characteristics -14 -10 V = -4.0V,-3.5V,-3.0V,-2.5V T =25 ℃ loss, high efficiency. • Low power Pulsed capability, low forward voltage drop. current • High -12 V =-2.0V • High surge capability. for overvoltage protection. • Guardring -10 • Ultra high-speed switching. • Silicon-8 epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Ta=25℃ GS a 0.012(0.3) Typ. Pulsed GS (A) VGS=-1.5V Mechanical data -4 ID MIL-STD-19500 /228 • RoHS -6product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) -6 DRAIN CURRENT DRAIN CURRENT ID (A) -8 -4 0.040(1.0) 0.024(0.6) -2 • Epoxy-2: UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H V =-1.0V , -0 • Terminals :Plated terminals, solderable per -0 -1 -2 -3 MIL-STD-750 -4 0.031(0.8) Typ. GS DRAIN TO SOURCE VOLTAGE Method 2026 VDS -0 -0.0 (V) • Polarity : Indicated by cathode band • Mounting Position : AnyR —— ID DS(ON) 150 : Approximated 0.011 gram • Weight 0.031(0.8) Typ. -0.5 -1.0 -1.5 -2.0 GATE TO SOURCE VOLTAGE VGS -2.5 (V) Dimensions in inches and (millimeters) RDS(ON) —— VGS 250 Ta=25℃ Ta=25℃ Pulsed Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 120 (mΩ) (mΩ) RDS(ON) RDS(ON) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. VGS=-2.5V 90 For capacitive load, derate current by 20% RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO -8 IFSM 60 VGS=-4.5V 30 0 -0 Current 8.3 -2 ms single-4half sine-wave -6 Peak Forward Surge DRAIN CURRENT superimposed on rated load (JEDEC method) ID Typical Junction Capacitance (Note 1) IS —— CHARACTERISTICS (A) 35 40 50 18 80 10 100 115 150 120 200 Vo 42 56 70 105 140 Vo 60 80 100 150 200 Vo D 1.0 -4 30 -0 -2 40 120 -55 to +125 Am -6 VGS -8 Am (V) ℃/ P -55 to +150 ℃ - 65 to +175 VF 0.50 IS IR @T A=125℃ 0.70 ℃ 0.85 0.5 -0.1 Rated DC Blocking Voltage SOURCE CURRENT 28 16 60 I =-3.6A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ NOTES: 15 50 GATE TO SOURCE VOLTAGE TJ Maximum Forward Voltage at 1.0A DC 14 40 TSTG Pulsed -0.3 50 -10 CJ VSD Ta=25 ℃ Storage Temperature Range (A) 100 0 RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range -1 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN ON-RESISTANCE ON-RESISTANCE 200 0.9 0.92 Vo 10 mA -0.03 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -0.01 2- Thermal Resistance From Junction to Ambient -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE 2012-06 2012-10 -1.0 VSD -1.2 (V) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2301THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .122(3.10) .063(1.60) .047(1.20) Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant .106(2.70) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 Maximum RMS Voltage VRMS 14 21 28 35 42 56 VDC 20 30 40 50 60 80 .080(2.04) .070(1.78) Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 120 200 Volts 70 105 140 Volts 100 150 200 Volts .003(0.08) 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage TSTG .004(0.10)MAX. 10 115 .008(0.20) 100 150 1.0 30 0.50 0.70 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.85 0.9 0.5 0.92 Volts mAmp 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP. SE2301 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2301‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.