WILLAS FM120-M+ SE2302THRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. N-Channel MOSFET for overvoltage protection. • Guardring 20-V(D-S) • Ultra high-speed switching. FEATURE • Silicon epitaxial planar chip, metal silicon junction. partsPower meet environmental • Lead-free TrenchFET MOSFET standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-23 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1. GATE Mechanical data APPLICATIONS 2. SOURCE • Epoxy : UL94-V0 rated flame retardant z Load Switch for Portable Devices • Case : Molded plastic, SOD-123H z DC/DC Converter , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 3. DRAIN 0.031(0.8) Typ. 0.031(0.8) Typ. z Pb-Free package is available Method 2026 RoHS product for packing • Polarity : Indicated by cathode band code suffix ”G” Position • Mounting Halogen free: Any product for • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) packing code suffix “H” MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MARKING: S2 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 15 50 16 60 18 80 10 100 115 150 120 200 Vol VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol Maximum Average Forward Rectified Current IO otherwise IFSM Maximum ratings (T =25℃ unless a Peak Forward Surge Current 8.3 ms single half sine-wave RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Gate-Source Storage TemperatureVoltage Range TSTG Drain-Source Voltage Continuous Drain Current CHARACTERISTICS 1.0 30 noted) Symbol V Value 40 120 20 -55 DS to +125 Am Am -55 to +150 -±8 65 to +175 VGS ID Unit ℃/W PF ℃ V ℃ 2.1 A FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH Continuous Source-Drain Current(Diode Conduction) Maximum Forward Voltage at 1.0A DC VF Power Dissipation Maximum Average Reverse Current at @T A=25℃ IR Resistance to Ambient (t≤5s) @T A=125℃ RatedThermal DC Blocking Voltage from Junction Operating Junction NOTES: 1- Measured at 1Temperature MHZ and applied reverse voltage of 4.0 VDC. Storage 14 40 Maximum RMS Voltage Parameter Typical Thermal Resistance (Note 2) 13 30 Vol superimposed on rated load (JEDEC method) 12 20 IS 0.50 0.70 0.6 0.85 0.9 PD 0.350.5 W RθJA 35710 ℃/W TJ 150 TSTG -55 ~+150 0.92 Vol mAm ℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2302THRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Electrical characteristics (Ta=25℃ unless otherwise noted) capability. • High surge • Guardring for overvoltage protection. Parameter Symbol Test Condition switching. • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • Static • Lead-free parts meet environmental standards of Drain-source breakdown MIL-STD-19500 /228voltage V(BR)DSS 0.146(3.7) 0.130(3.3) Min VGS = 0V, ID =10µA 20 VDS =VGS, ID =50µA 0.65 Gate-body leakage Mechanical VDS =0V, VGS =±8V data IGSS Epoxy : UL94-V0 flame retardant IDSS Zero• gate voltage drainrated current Typ Max0.071(1.8) Units 0.056(1.4) for packing code suffix "G" • RoHS product Gate-threshold voltage VGS(th) Halogen free product for packing code suffix "H" 0.012(0.3) Typ. V 0.95 1.2 ±100 1 VDS =20V, VGS =0V • Case : Molded plastic, SOD-123H VGS =4.5V, ID =3.6A 0.031(0.8) Typ. a , Drain-source on-resistance rDS(on) • Terminals :Plated terminals, solderable per MIL-STD-750 VGS =2.5V, ID =3.1A 0.045 0.070 nA 0.040(1.0) 0.024(0.6) µA 0.0600.031(0.8) Typ. Ω 0.115 Method 2026 Forward transconductance a • Polarity : Indicated by cathode band Diode forward voltage Position : Any • Mounting Dynamic • Weight : Approximated 0.011 gram gfs VDS =5V, ID =3.6A VSD IS=0.94A,VGS=0V Total gate charge Qg 8 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VDS =10V,VGS =4.5V,ID =3.6A Gate-source charge temperature unless otherwise Qgsspecified. Ratings at 25℃ ambient Single phase half wave, 60Hz, resistive of inductive load. Gate-drain charge Qgd For capacitive load, derate current by 20% b Input capacitance Coss nC 1.5 300 VDS =10V,VGS =0V,f=1MHz pF 13 30 14 40 15 50 16 60 18 80 80 120 10 100 115 150 120 200 Volt Reverse transfer capacitance Maximum Recurrent Peak Reverse Voltage rss VCRRM b Maximum RMS Voltage Switching VRMS 14 21 28 35 42 56 70 105 140 Volt VDC 20 30 40 50 60 80 100 150 200 Volt Turn-on delay time td(on) IO tr FSM tId(off) Maximum Average Forward Rectified Current Rise time Peak Forward Surge Current 8.3 ms single half sine-wave Turn-off delay time superimposed on rated load (JEDEC method) tf RΘJA FallThermal time Resistance (Note 2) Typical CJ Typical Junction Capacitance (Note 1) Notes : TJ Operating Temperature Range a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. Storage Temperature Range 10 12 20 b Maximum DC Blocking Voltage 4.0 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Output capacitance Marking Code 1.2 0.65 Ciss RATINGS b 0.76 S RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω 40 120 -55 to +125 CHARACTERISTICS 15 Amp 55 80 16 60 Amp 25 ℃/W 10 ns PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 VDD=10V, 7 @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2302 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Typical Characteristics better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Output Characteristics protection. • Guardring for overvoltage 15 V =3.5V,3.0V,2.5V T =25℃ switching. • Ultra high-speed Pulsed • Silicon epitaxial planar chip, metal silicon junction. V =2.0V • Lead-free parts meet environmental standards of GS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Transfer Characteristics 10 0.071(1.8) 0.056(1.4) Ta=25℃ a Pulsed GS 8 (A) ID • MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 9 Mechanical data • Epoxy : UL94-V0 rated flame retardant • 6Case : Molded plastic, SOD-123H , =1.5V • Terminals :Plated terminals, solderable perVMIL-STD-750 GS DRAIN CURRENT DRAIN CURRENT ID (A) 12 Method 2026 DRAIN TO SOURCE VOLTAGE VDS 0.040(1.0) 0.024(0.6) 4 0.031(0.8) Typ. 0.031(0.8) Typ. 2 3 • Polarity : Indicated by cathode band • Mounting Position : Any • 0Weight : Approximated 0.011 gram 0 2 4 6 6 Dimensions in inches and (millimeters) 8 0 0.0 10 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE VGS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25℃ RATINGS VRRM (mΩ) 12 20 13 30 14 21 VDC 20 30 Maximum Average Forward Rectified Current ON-RESISTANCE VGS=2.5V Peak Forward Surge Current 8.3 ms single half sine-wave 40 superimposed on rated load (JEDEC method) VGS=4.5V IO IFSM 20 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 0 5 0.12 15 50 16 60 10 15 20 CHARACTERISTICS DRAIN CURRENT ID (A) 25 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 0.08 Am Am ID=4.5A40 -55 to +125 ℃ 120 0.04 P -55 to +150 ℃ - 65 to +175 TSTG Maximum Forward Voltage at 1.0A DC 30 0.00 0 2 4 ℃ 6 8 10 FM180-MH VFM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH GATE TOFM160-MH SOURCE VOLTAGE (V) GS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 0.16 RΘJA Typical Thermal Resistance (Note 2) RDS(ON) VRMS Maximum60DC Blocking Voltage RDS(ON) Maximum RMS Voltage 0 Ta=25℃ ( Ω) 80 Maximum Recurrent Peak Reverse Voltage VGS FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH Pulsed Pulsed Marking Code RDS(ON) —— 0.20 ON-RESISTANCE Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive load. RDS(ON) ——of inductive ID 100 For capacitive load, derate current by 20% 2.5 (V) @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2302THRU FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERMOSFETS RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .122(3.10) Mechanical data .106(2.70) • Epoxy : UL94-V0 rated flame retardant .063(1.60) .047(1.20) Halogen free product for packing code suffix "H" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .110(2.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .083(2.10) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI .080(2.04) .070(1.78) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 115 100 150 .003(0.08) 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .012(0.30) NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 2- Thermal Resistance From Junction to Ambient 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.5 0.92 Volts mAm 10 Dimensions in inches and (millimeters) 2012-06 2012-10 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. SE2302 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2302‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.