WILLAS FM120-M SE2304 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N-Channeloptimize 30-V(D-S) boardMOSFET space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. FEATURE • Guardring for overvoltage protection. TrenchFET Power MOSFET switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) SOT-23 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3. DRAIN Mechanical data APPLICATIONS Epoxy : UL94-V0 rated flame retardant z Load•Switch for Portable Devices • Case : Molded plastic, SOD-123H z DC/DC Converter , • Terminals :Plated terminals, solderable per MIL-STD-750 z 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Pb-Free package is available Method 2026 RoHS product for packing code suffix ”G” • Polarity : Indicated by cathode band 0.031(0.8) Typ. Dimensions in inches and (millimeters) : Any • Mounting Halogen free Position product for packing code suffix “H” • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% MARKING: S4 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 unless otherwise noted) Maximum ratings (Ta=25℃ Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) Drain-Source Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Gate-Source Voltage Operating Temperature Range Continuous Drain Current Storage Temperature Range IFSM VDS CJ VGS TJ Pulsed Drain Current CHARACTERISTICS Continuous Source-Drain Diode Current Maximum Forward Voltage at 1.0A DC Maximum Power Dissipation Symbol RΘJA TSTG 1.0 Value 30 ID 40 120 30 -55 to +125 IDM ±20 3.3 Unit V -55 to +150 - 65 to +175 A 15 SYMBOL FM120-MH IS FM130-MH FM140-MH FM150-MH 0.9 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF 0.70 0.85 0.5 RθJA 357 10 Storage Temperature TJ 150 Junction Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. TSTG -55 ~+150 IR Thermal Resistance from Junction to Ambient @T A=125℃ (t≤5s) Rated DC Blocking Voltage NOTES: PD 0.50 0.35 Maximum Average Reverse Current at @T A=25℃ W 0.9 0.92 ℃/W ℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2304 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss, high (T efficiency. • Low Electrical characteristics a=25℃ unless otherwise noted) • High current capability, low forward voltage drop. surge capability. • HighParameter Symbol Test condition • Guardring for overvoltage protection. Static • Ultra high-speed switching. epitaxialvoltage planar chip, metalVsilicon • Silicon Drain-source breakdown (BR)DSSjunction. VGS = 0V, ID =250µA • Lead-free parts meet environmental standards of Gate-source threshold voltage MIL-STD-19500 /228 VGS(th) 0.146(3.7) 0.130(3.3) Min Typ Max 30 VDS =VGS, ID =250µA V 1.2 2.2 RoHS product for packing code suffix "G" IGSS VDS =0V, VGS =±20V Halogen free product for packing code suffix "H" IDSS ±100 VGS =10V, ID =3.2A • Epoxy : UL94-V0 rated flame retardant RDS(on) • Case : Molded plastic, SOD-123H VGS =4.5V, ID =2.8A , a terminals, solderable per MIL-STD-750 • Terminals :Plated Forward transconductance gfs VDS =4.5V, ID =2.5A 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any Total gate charge Qg • Weight : Approximated 0.011 gram VDS =15V,VGS =10V,ID =3.4A Gate-source charge VDS =15V,VGS =4.5V,ID =3.4A 0.031(0.8) Typ. 4.5 6.7 2.1 3.2 nC 0.8 4.4 Ciss Ω 8.8 235 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VDS =15V,VGS =0V,f =1MHz Coss Marking Code Reverse capacitance Maximumtransfer Recurrent Peak Reverse Voltage Crss VRRM Maximum RMS Time Voltage Turn-on delay td(on)VRMS Maximum DC Blocking Voltage Rise time Maximum Average Forward Rectified Current Turn-off delay time Fall time superimposed on rated load (JEDEC method) Turn-on delay time Typical Thermal Resistance (Note 2) tr IO td(off) IFSM tf td(on) RΘJA Typical Junction Capacitance (Note 1) Rise time CJ tr Operating Temperature Range Turn-off delay time td(off) Storage Temperature Range 12 20 14 20 VDC VDD=15V, Peak Forward Surge Current 8.3 ms single half sine-wave TJ 13 30 14 40 15 50 16 60 21 28 35 42 30 40 50 60 RL=5.6Ω, ID ≈2.7A, VDD=15V, to +125 RL=5.6Ω, ID-55 ≈2.7A, 17 12 50 18 80 10 100 56 20 80 75 pF 115 150 120 200 70 105 140 100 150 200 20 35 10 405 120 12 20 10 15 5 10 - 65 to +175 tf CHARACTERISTICS 45 1.0 12 30 22 VGEN=4.5V,Rg=1Ω TSTG VGEN=10V,Rg=1Ω Fall time ns -55 to +150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Drain-source body diode characteristics VF Maximum Forward Voltage at 1.0A DC Continuous source-drain Maximum Average Reverse diode Currentcurrent at @T A=25℃ IS Rateddiode DC Blocking Voltage Pulse forward current Ω 0.65 Single phase half wave, 60Hz, resistive of inductive Gate resistance Rg load. f =1.0MHz 0.075 0.85 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Output capacitance 0.061 S Gate-drain Qgd specified. Ratings at charge 25℃ ambient temperature unless otherwise RATINGS 0.060 Dimensions in inches and (millimeters) Qgs For capacitive load, derate current by 20% Input capacitance 0.049 µA 0.040(1.0) 0.024(0.6) 2.5 Method 2026 Dynamic nA 1 VDS =30V, VGS =0V Drain-source on-state resistancea b Units 0.071(1.8) 0.056(1.4) • leakage Gate-body Zero gate voltage drain current Mechanical data 0.012(0.3) Typ. @T A=125℃ISM IR 0.50 TC=25℃ 0.70 0.9 0.85 0.5 1.4 A 10 15 A 1.2 V 0.92 Body diode voltage NOTES: VSD IS=-2.7A,VGS=0V 0.8 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Notes : 2- Thermal Resistance From Junction to Ambient a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. Guaranteed by design, not subject to production testing. 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2304 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Features Package outline Typical Characteristics • Batch process design, excellent power dissipation offers 5 V =10V,9V,8V,7V,6V,5V Ta=25℃ optimizeGSboard space. Pulsed • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. VGS=4V • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" VGS=3V Halogen free product for packing code suffix "H" 3 2 VDS Method 2026 0 VGS VGS Pulsed Maximum RMS Voltage VRMS 14 VGS=10V VDC Maximum DC Blocking Voltage 30 IO IFSM Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 0 superimposed on rated method)12 0 4 load (JEDEC 8 16 20 RΘJA DRAIN CURRENT ID (A) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ (mΩ) 14 40 15 50 CHARACTERISTICS 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 ID=2.5A 60 80 100 150 200 100 0 1.0 30 0 2 4 6 GATE TO SOURCE 40 VOLTAGE 120 -55 to +125 VGS 8 10 (V) -55 to +150 - 65 to +175 TSTG VSD SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 13 30200 ON-RESISTANCE 12 20 —— 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VGS=4.5V Storage Temperature Range I S 4 (V) 400 RDS(ON) (mΩ) RDS(ON) 3 Ta=25℃ VRRM ON-RESISTANCE GATE TO SOURCE VOLTAGE RDS(ON) —— Maximum Recurrent Peak Reverse Voltage 60 0.50 0.85 0.9 0.5 IR @T A=125℃ 0.70 0.92 10 IS (A) 2 500 RATINGS Marking Code 0.031(0.8) Typ. 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 90 1 0.031(0.8) Typ. 0 Dimensions in inches and (millimeters) 120 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Pulsed 0.040(1.0) 0.024(0.6) (V) Ta=25℃ Ta=25℃ 0.071(1.8) 0.056(1.4) 1 • Polarity : Indicated by cathode band : Any—— I • Mounting Position RDS(ON) D 150 • Weight : Approximated 0.011 gram 10 0.012(0.3) Typ. (A) Mechanical data DRAIN TO SOURCE VOLTAGE 0.146(3.7) 0.130(3.3) 4 GS Ta=25℃ Pulsed • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H V =2V 0 , 0• Terminals 2 4 6 8 10 12 :Plated terminals, solderable per MIL-STD-750 Pulsed Transfer Characteristics SOD-123H 5 ID DRAIN CURRENT 10 better reverse leakage current and thermal resistance. Output Characteristics • Low profile surface mounted application in order to DRAIN CURRENT 15 ID (A) 20 SOURCE CURRENT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.1 2- Thermal Resistance From Junction to Ambient 0.01 1E-3 0 200 400 600 800 2012-06 SOURCE TO DRAIN VOLTAGE V SD 2012-0 1000 (mV) 1200 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2304 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range VRRM 12 20 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC Rev.D COR WILLAS ELECTRONIC CORP. SE2304 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2304‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.