WILLAS FM120-M SE2321 THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOT-23 Plastic-Encapsulate MOSFETS Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. P-Channel 20-V(D-S) MOSFET • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. APPLICATIONS • Guardring for overvoltage protection. z PA Switch • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. z Load •Switch • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) SOT-23 Pb-Free package /228 is available MIL-STD-19500 • RoHS product for packing code suffix "G" RoHS Halogen product packing code freefor product for packing code suffix suffix "H"”G” Mechanical data Halogen free product for packing code suffix “H” z 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% MARKING: S21 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximumratings RMS Voltage VRMS noted)14 Maximum (Ta=25℃ unless otherwise 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage VRRM VDC Maximum Average Forward Rectified Current Parameter Peak Forward Surge Current 8.3 ms single half sine-wave Drain-Source Voltage superimposed on rated load (JEDEC method) Gate-Source Voltage IFSM RΘJA Typical Thermal Resistance (Note 2) 20 IO Symbol ±12 -2.9 ID Operating Temperature Range Pulsed Drain Current TJ IDM Continuous Source-Drain Diode Current TSTG Maximum Power Dissipation CHARACTERISTICS -55 to +125 IS -12 -0.59 40 120 - 65 to +175 Unit V -55 to +150 A PD 0.35 FM160-MH FM180-MH FM1100-MH W FM1150-MH FM1200FM130-MH FM140-MH FM150-MH SYMBOL FM120-MH Maximum Forwardfrom Voltage at 1.0A DC Thermal Resistance Junction to Ambient VF Junction Temperature IR Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -20 VGS CJ Storage Temperature Range Value VDS Continuous Drain Current Typical Junction Capacitance (Note 1) 1.0 30 @T A=125℃ Storage Temperature NOTES: RθJA 0.50 3570.70 TJ 150 Tstg -50 ~+150 0.85 0.5 10 ℃/W 0.9 0.92 ℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2321 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. unless otherwise Electrical •characteristics (Ta=25℃ Silicon epitaxial planar chip, metal silicon junction. noted) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Parameter Static Symbol 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Test Condition • RoHS product for packing code suffix "G" 0.012(0.3) Typ. Min Typ Max Unit Halogen free product for packing code suffix "H" Mechanical data Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-10µA -20 : UL94-V0 rated flame retardant • Epoxy Gate-source leakage IGSS VDS =0V, VGS =±12V • Case : Molded plastic, SOD-123H Zero Gate voltage drain current IDSS VDS =-16V, VGS, =0V • Terminals :Plated terminals, solderable per MIL-STD-750 Gate-source threshold voltage Method 2026 V 0.040(1.0) 0.024(0.6) ±100 0.031(0.8) Typ. VGS(th) VDS =VGS, ID =-250µA • Polarity : Indicated by cathode band : Any • Mounting Drain-source on-state Position resistance RDS(on) • Weight : Approximated 0.011 gram VGS =-4.5V, ID =-3.3A -0.4 nA -1.0 µA0.031(0.8) Typ. -0.9 V Dimensions in inches 0.057 and (millimeters) VGS =-2.5V, ID =-2.8A 0.076 VGS =-1.8V, ID =-2.3A 0.110 Ω 3 Forward tranconductance gfS ELECTRICAL VDS =-5V, ID CHARACTERISTICS =-3.3A MAXIMUM RATINGS AND S Ratings at 25℃ ambient temperature unlessVotherwise Forward diode voltage Vspecified. GS =0V,IS=-1.6A SD -1.2 Single phase half wave, 60Hz, resistive of inductive load. Dynamic For capacitive load, derate current by 20% Input capacitancea,b a,b Ciss RATINGS a,b Voltage Maximum Recurrent Peak Reverse Reverse transfer capacitance Maximum RMS Voltage a Crss Qg Total Gate charge Maximum DC Blocking Voltage Qgs Gate-Source chargea Maximum Average Forward Rectified Current Gate-Drain chargea Qgd Peak Forward Surge Current 8.3 ms single half sine-wave Switching superimposed on rated load (JEDEC method) a,b Typical Thermal Resistance (Note 2) Turn-on delay Time td(on) Typical Junction Capacitance (Note 1) Rise time tr Operating Temperature Range Turn-off delay time Storage Temperature Range time Fall td(off) CHARACTERISTICS tf Notes : Maximum Forward Voltage at 1.0A DC VDS =-6V,V 12 GS =0V,f 13 =1MHz 14 VRRM 20 30 40 15 50 VRMS 14 21 28 35 VDC 20 30 40 50 16 170 60120 42 60 VDS =-6V,VGS =-4.5V,ID=-3.3A CJ 80 40 120 13 10 pF 100 115 150 120 200 70 105 140 150 200 100 nc nc nc 25 55-55 to +150 ns - 65 to +175 90 VGEN=-4.5V,V-55 DD=-6V, to +125 TJ ID =-1.0A,RG=6Ω, TSTG 56 1.0 2.2 30 IFSM RΘJA 18 80 1.2 IO RL=6Ω 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Reverse Current duty at @T A=25℃ a. Pulse Test :Average pulse width ≤300µs, cycle ≤2%. Rated DC Blocking Voltage 715 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Coss Output capacitance Marking Code V @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2321 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Features Package outline Typical Characteristics • Batch process design, excellent power dissipation offers Outputleakage Characteristics better reverse current and thermal resistance. VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V profile surface mounted application in order to Pulsedoptimize board space. VGS=-2.0V • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 VGS=-1.5V • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" -16 • Transfer Characteristics SOD-123H -10 Low Ta=25℃ Pulsed 0.146(3.7) 0.130(3.3) -8 0.012(0.3) Typ. DRAIN CURRENT DRAIN CURRENT ID ID (A) (A) -12 Ta=25℃ -8 -4 Mechanical data -6 0.071(1.8) 0.056(1.4) -4 -2 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant V =-1.0V • Case : Molded plastic, SOD-123H -0 -1 -2 -3 -4 , -0.0 • Terminals :Plated terminals, solderable per MIL-STD-750 GS -0 -0 DRAIN TO SOURCE VOLTAGE VDS Method 2026 300 0.031(0.8) Typ. -0.5 -1.0 GATE TO SOURCE VOLTAGE (V) • Polarity : Indicated by cathode band Any I • Mounting Position RDS(ON) :—— D • Weight : Approximated 0.011 gram T =25℃ -1.5 VGS (V) Dimensions in inches and (millimeters) VGS RDS(ON) —— 500 Ta=25℃ a Pulsed Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ON-RESISTANCE RATINGS 150 Marking Code Maximum Recurrent Peak Reverse VGSVoltage =-1.8V 100 Maximum RMS Voltage Maximum DC Blocking Voltage VRRM 12 20 VRMS 14 VGS=-2.5V VDC 20 (mΩ) 13 30 14 40 200 21 28 30 100 40 15 50 16 60 18 80 42 60 35 ID=-3.3A 50 IO Maximum Average Forward Rectified Current VGS=-4.5V Peak Forward Surge Current 8.3 ms single half sine-wave 0 -0 -2 -4 -6 superimposed on rated load (JEDEC method)-8 Typical Thermal DRAIN CURRENT Resistance (Note 2) ID -10 IFSM -12 RΘJA (A) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ IS —— VSD Storage Temperature Range 0 -0 -2 -4 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 GATE TO SOURCE VOLTAGE 40 10 100 -6 VGS 120 -55 to +125 -8 (V) -55 to +150 - 65 to +175 TSTG -20 Ta=25℃ CHARACTERISTICS -10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Pulsed VF IS (A) Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage IR 0.50 0.70 0.85 0.9 0.5 0.92 10 -3 SOURCE CURRENT 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- 50 RDS(ON) RDS(ON) (mΩ) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 200 For capacitive load, derate current by 20% 400 ON-RESISTANCE 250 0.031(0.8) Typ. -2.5 -2.0 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- -1 Thermal Resistance From Junction to Ambient -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 2012-06SOURCE TO DRAIN VOLTAGE 2012-10 VSD (V) -1.2 -1.4 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2321 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM .080(2.04) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .070(1.78) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC COR Rev.D WILLAS ELECTRONIC CORP. SE2321 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2321‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.