WILLAS SE2310 SOT-23 Plastic-Encapsulate MOSFETS N-Channel MOSFET DESCRIPTION The SE2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURES High power and current handing capability Lead free product is acquired Surface mount package Moisture Sensitivity Level 1 APPLICATION Battery Switch DC/DC Converter MARKING: S10 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Thermal Resistance from Junction to Ambient (note 2) Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ 2013-10 WILLAS ELECTRONIC CORP. WILLAS SE2310 SOT-23 Plastic-Encapsulate MOSFETS Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 2 V VGS =10V, ID =3A 105 mΩ VGS =4.5V, ID =3A 125 mΩ Forward tranconductance (note 3) gFS VDS =15V, ID =2A Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 0.5 S 1.4 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss 247 pF Output Capacitance Coss 34 pF Reverse Transfer Capacitance Crss 19.5 pF 6 ns VGS=10V,VDD=30V, 15 ns ID=1.5A,RGEN=1Ω 15 ns tf 10 ns Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 1.3 nC VDS =30V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDS =30V,VGS =4.5V,ID =3A Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. 2013-10 WILLAS ELECTRONIC CORP. WILLAS SE2310 SOT-23 Plastic-Encapsulate MOSFETS Typical Characteristics Output Characteristics 15 Transfer Characteristics 8 Pulsed VDS=5.0V Pulsed (A) DRAIN CURRENT DRAIN CURRENT VGS=2.5V 5 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS Ta=100℃ 4 2 VGS=2.0V 0 Ta=25℃ 6 ID 10 ID (A) VGS=5V、4V、3.0V 0 5 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID 140 RDS(ON) 400 —— 4 VGS (V) VGS Ta=25℃ Ta=25℃ (mΩ) (mΩ) VGS=4.5V 300 RDS(ON) 100 ON-RESISTANCE RDS(ON) ON-RESISTANCE Pulsed Pulsed 120 80 VGS=10V 60 200 ID=3A 100 40 20 0.5 2 4 6 DRAIN CURRENT 8 ID 0 10 2 4 6 8 GATE TO SOURCE VOLTAGE IS —— VSD 10 0 (A) VGS 10 (V) Threshold Voltage 1.2 Ta=25℃ (V) 1.1 VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed 0.1 0.01 1.0 ID=250uA 0.9 0.8 0.7 0.6 1E-3 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 2013-10 1.0 VSD (V) 1.2 0.5 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃) WILLAS ELECTRONIC CORP. WILLAS SE2310 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN (1) Packing Tape & Reel Packing :3000pcs/Reel (2) Part Number-T G ‐WS Note: 1. Packing code, T: Tape & 7” Reel Pakcing 2. RoHS product for packing code suﬃx ”G”, Halogen free product for packing code suﬃx "H" . ***Disclaimer*** WILLAS reserves the right to make changes without no ce to any product speciﬁca on herein, to make correc ons, modiﬁca ons, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet speciﬁca ons and its informa on contained are intended to provide a product descrip on only. "Typical" parameters which may be included on WILLAS data sheets and/ or speciﬁca ons can and do vary in diﬀerent applica ons and actual performance may vary over me. WILLAS does not assume any liability arising out of the applica on or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applica ons intended for life-sustaining or other related applica ons where a failure or malfunc on of component or circuitry may directly or indirectly cause injury or threaten a life without expressed wri en approval of WILLAS. Customers using or selling WILLAS components for use in such applica ons do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-10 WILLAS ELECTRONIC CORP.