SE2310(SOT 23)

WILLAS
SE2310
SOT-23 Plastic-Encapsulate MOSFETS
N-Channel MOSFET
DESCRIPTION
The SE2310 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
 High power and current handing capability
 Lead free product is acquired
 Surface mount package
Moisture Sensitivity Level 1
APPLICATION
 Battery Switch
 DC/DC Converter
MARKING: S10
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
3
A
Pulsed Drain Current (note 1)
IDM
10
A
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
2013-10
WILLAS ELECTRONIC CORP.
WILLAS
SE2310
SOT-23 Plastic-Encapsulate MOSFETS
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =60V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
60
V
1
µA
±100
nA
2
V
VGS =10V, ID =3A
105
mΩ
VGS =4.5V, ID =3A
125
mΩ
Forward tranconductance (note 3)
gFS
VDS =15V, ID =2A
Diode forward voltage (note 3)
VSD
IS=3A, VGS = 0V
0.5
S
1.4
1.2
V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
247
pF
Output Capacitance
Coss
34
pF
Reverse Transfer Capacitance
Crss
19.5
pF
6
ns
VGS=10V,VDD=30V,
15
ns
ID=1.5A,RGEN=1Ω
15
ns
tf
10
ns
Total Gate Charge
Qg
6
nC
Gate-Source Charge
Qgs
1
nC
Gate-Drain Charge
Qgd
1.3
nC
VDS =30V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
VDS =30V,VGS =4.5V,ID =3A
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
2013-10
WILLAS ELECTRONIC CORP.
WILLAS
SE2310
SOT-23 Plastic-Encapsulate MOSFETS
Typical Characteristics
Output Characteristics
15
Transfer Characteristics
8
Pulsed
VDS=5.0V
Pulsed
(A)
DRAIN CURRENT
DRAIN CURRENT
VGS=2.5V
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
VDS
Ta=100℃
4
2
VGS=2.0V
0
Ta=25℃
6
ID
10
ID
(A)
VGS=5V、4V、3.0V
0
5
0
1
(V)
2
3
GATE TO SOURCE VOLTAGE
ID
140
RDS(ON)
400
——
4
VGS
(V)
VGS
Ta=25℃
Ta=25℃
(mΩ)
(mΩ)
VGS=4.5V
300
RDS(ON)
100
ON-RESISTANCE
RDS(ON)
ON-RESISTANCE
Pulsed
Pulsed
120
80
VGS=10V
60
200
ID=3A
100
40
20
0.5
2
4
6
DRAIN CURRENT
8
ID
0
10
2
4
6
8
GATE TO SOURCE VOLTAGE
IS —— VSD
10
0
(A)
VGS
10
(V)
Threshold Voltage
1.2
Ta=25℃
(V)
1.1
VTH
1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
Pulsed
0.1
0.01
1.0
ID=250uA
0.9
0.8
0.7
0.6
1E-3
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
2013-10
1.0
VSD (V)
1.2
0.5
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃)
WILLAS ELECTRONIC CORP.
WILLAS
SE2310
SOT-23 Plastic-Encapsulate MOSFETS
Ordering Information:
Device PN
(1)
Packing
Tape & Reel Packing :3000pcs/Reel
(2)
Part Number-T G ‐WS Note: 1. Packing code, T: Tape & 7” Reel Pakcing
2. RoHS product for packing code suffix ”G”, Halogen free product for packing code suffix "H" .
***Disclaimer***
WILLAS reserves the right to make changes without no ce to any product
specifica on herein, to make correc ons, modifica ons, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifica ons and its informa on
contained are intended to provide a product descrip on only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifica ons can
and do vary in different applica ons and actual performance may vary over me.
WILLAS does not assume any liability arising out of the applica on or
use of any product or circuit.
WILLAS products are not designed, intended or authorized for use in medical,
life-saving implant or other applica ons intended for life-sustaining or other related
applica ons where a failure or malfunc on of component or circuitry may directly
or indirectly cause injury or threaten a life without expressed wri en approval
of WILLAS. Customers using or selling WILLAS components for use in
such applica ons do so at their own risk and shall agree to fully indemnify WILLAS
Inc and its subsidiaries harmless against all claims, damages and expenditures.
2013-10
WILLAS ELECTRONIC CORP.