WILLAS FM120-M+ SESD3ZxxCTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H General Description surface mounted application in order to • Low profile Features board space. Theoptimize SESD3ZxxC is designed to protect voltage • Low power loss, high efficiency. sensitive fromlow ESD and voltage transient voltage current capability, forward drop. • Highcomponents surge capability. • High events. Excellent clamping capability, low leakage, and • Guardring for overvoltage protection. fast response time, make these parts ideal for ESD switching. • Ultra high-speed protection designs where board space is at a planar chip, metal silicon junction. • Silicononepitaxial Lead-free parts meet environmental standards of • premium. z Small Body Outline Dimensions 0.146(3.7) z Low Body Height z Peak Power up to 350 Watts @ 8 x 20 µs Pulse z Low Leakage current z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) per Human • MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" z Cellular phones • Epoxy : UL94-V0 rated flame retardant Portable devices • Case : Molded plastic, SOD-123H ,z Digital cameras • Terminals :Plated terminals, solderable per MIL-STD-750 Power supplies Method 2026 z z z 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Body Model Applications Mechanical data z 0.130(3.3) Pb-Free package is available RoHS product for packing code suffix0.040(1.0) ”G” 0.024(0.6) Halogen free product for packing code suffix “H” Moisture Sensitivity Level 1 0.031(0.8) Typ. 0.031(0.8) Typ. Complies with Dimensions the following standards in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MIL STD 883E - Method 3015-7 Class 3 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Functional diagram RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ 0.50 IR Absolute Ratings (Tamb=25 °C) @T A=125℃ Rated DC Blocking Voltage 14 40 TSTG SOD-323 Maximum Forward Voltage at 1.0A DC Symbol Parameter 0.70 0.85 0.9 0.5 10 Units PPK at 1 MHZPeak Pulse Power (tpof=4.0 8/20μs) 1- Measured and applied reverse voltage VDC. 350 W 2- Thermal From Junctionlead to Ambient TL ResistanceMaximum temperature 260 °C 2012-09 for soldering during 10s Tstg Storage Temperature Range -55 to +155 °C Top Operating Temperature Range -40 to +125 °C TJ Maximum junction temperature 150 °C 2012-06 0.92 Value NOTES: 25 kV HBM (Human Body Model) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD3ZxxCTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • BatchParameter Electrical better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space.Parameter Symbol • Low power loss, high efficiency. IPP• High current Maximum Reverse Peak Pulse Current capability, low forward voltage drop. High surge capability. • VC Clamping Voltage @ IPP • Guardring for overvoltage protection. VRWM Working Peak Reverse Voltage switching. • Ultra high-speed epitaxial planar chip,Leakage metal silicon junction. • SiliconMaximum Reverse Current @ IR• Lead-free parts meet environmental standards of VRWM MIL-STD-19500 /228 IT• RoHS Test Current product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) free product for packing code suffix "H" VBRHalogen Breakdown Voltage @ IT Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Electrical Characteristics 0.031(0.8) Typ. 0.031(0.8) Typ. Ratings at 25°C ambient temperature unless otherwise specified. • Polarity : Indicated by cathode band VBR • Mounting Position : Any • Weight : Approximated 0.011 gram Min. Typ. Part Numbers Dimensions in inches and (millimeters) VRWM IT Max. IR Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive SESD3Z5C 5.4 of inductive 6.7 load. 7.8 For capacitive load, derate current by 20% SESD3Z12C RATINGS 13.3 14.5 Typ. （Note1） MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V V V mA V C 1 5.0 µA pF 1 200 15.7 1 FM140-MH FM150-MH 12.0 FM160-MH FM180-MH 1 FM1100-MH100 FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Marking Code 1. Capacitance is measured at f=1MHz, VR=0V,TA12 =25℃. 13 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 V Typical Maximum DCCharacteristics Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction Ambient Fig1. Pulse toWaveform 2012-09 2012-06 Fig2.Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD3ZxxCTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch process Application Note better reverse leakage current and thermal resistance. SOD-123H Electrostatic discharge (ESD) is a major of failure in electronic systems. Transient Voltage mounted application in ordercause to • Low profile surface optimize board space. Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. transient a low capability, enough level such that damage low forward voltage drop. to the protected semiconductor is prevented. • Hightocurrent High surge capability. •Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel • Guardring for overvoltage protection. protection elements, switching. connected between the signal lines to ground. As the transient rises above the 0.071(1.8) • Ultra high-speed 0.056(1.4) epitaxial chip, metal siliconbecomes junction. a low impedance path diverting the transient current to • Silicon operating voltage of planar the device, the TVS Lead-free parts meet environmental standards of • ground. The SESD3ZxxC is the ideal board evel protection of ESD sensitive semiconductor components. MIL-STD-19500 /228 RoHS product for packing code suffix "G" design flexibility in the design of high density boards where the •The tiny SOD-323 package allows Halogen free product for packing code suffix "H" space saving is at a premium. This enables to shorten the routing and contributes to hardening against Mechanical data ESD. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , SOD-323 Mechanical Data • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) .045(1.15) .010(0.25) .016(0.40) .057(1.45) .106(2.70) • Polarity : Indicated by cathode band.091(2.30) • Mounting Position : Any .075(1.90) • Weight : Approximated 0.011 gram .059(1.50) .043(1.10) .031(0.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .004(0.10)MAX. RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CHARACTERISTICS 115 150 120 200 21 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V .008(0.20) 30 .004(0.10) 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ Marking 10 100 Dimensions in inches and (millimeters) Maximum Forward Voltage at 1.0A DC 18 80 TSTG Rated DC Blocking Voltage 16 60 TJ Storage Temperature Range 15 50 .010(0.25)MIN. Operating Temperature Range 14 40 .016(0.40) .010(0.25) CJ Typical Junction Capacitance (Note 1) 13 30 @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Type number 2- Thermal Resistance From Junction to Ambient 2012-09 Marking code SESD3Z5C CC SESD3Z12C 12C 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD3ZxxC Transient Voltage Suppressors for ESD Protection Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09 WILLAS ELECTRONIC CORP.