WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current andsuffix thermal product for packing code "G",resistance. • RoHS SOD-123H profile free surface mounted application in order • Low Halogen product for packing code suffix "H"to . optimize board space. Moisture Sensitivity Level 1 • Low power loss, high efficiency. current capability, low forward voltage drop. • High ORDERING INFORMATION • High surge capability. for overvoltage protection. • Guardring Device Marking Shipping • Ultra high-speed switching. 1AM 3000/Tape & Reel MMBT3904LT1 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT–23 MIL-STD-19500 /228 productRATINGS for packing code suffix "G" MAXIMUM • RoHS Halogen free product for packing code suffix "H" Symbol Rating data Mechanical Value Unit Collector–Emitter Voltage V CEO 40 : UL94-V0 rated flame retardant • Epoxy Collector–Base Voltage 60 : Molded plastic, SOD-123H V CBO • Case , • Terminals :Plated terminals, solderable 6.0 Emitter–Base Voltage V EBO per MIL-STD-750 Method 2026 Collector Current — Continuous IC Polarity : Indicated by cathode band 200 • • Mounting Position : Any THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram 0.024(0.6) Vdc 0.031(0.8) Typ. mAdc 2 Symbol Max Unit MAXIMUM RATINGS Total Device Dissipation FR– 5 AND Board, ELECTRICAL (1) PDCHARACTERISTICS 225 mW T = 25°C A ambient temperature unless otherwise specified. Ratings at 25℃ above 25°Cresistive of inductive load. 1.8 mW/°C Single phaseDerate half wave, 60Hz, Thermal Resistance, Junction to Ambient R 556 °C/W θJA For capacitive load, derate current by 20% Total Device Dissipation PD 300 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Alumina Substrate, (2) TA = 25°C Marking Code 12 13 14 15 16 18 10 115 120 Derate above 25°C 2.4 mW/°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Thermal Resistance, Junction to Ambient RθJA 417 °C/W Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Operating Junction and Storage Temperature –55 to +150 TJ , Tstg °C Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC IO IFSM Maximum Average Forward Rectified Current DEVICE MARKING Peak Forward Surge Current 8.3 ms single half sine-wave MMBT3904LT1 = 1AM superimposed on rated load (JEDEC method) 1.0 30 noted.) ELECTRICAL (TAR=ΘJA 25°C unless otherwise Typical Thermal Resistance CHARACTERISTICS (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Characteristic OFF CHARACTERISTICS Storage Temperature Range Symbol Min -55 to +125 Max Amps Amps 40 120 Unit 40 — 60 0.70 — V (BR)EBO 6.0 — Current 1- Measured at Base 1 MHZCutoff and applied reverse voltage of 4.0 VDC. I BL — 50 nAdc 30 Vdc, V EB to = Ambient 3.0 Vdc, ) ( V CE=From 2- Thermal Resistance Junction Collector Cutoff Current I CEX — 50 nAdc CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Collector–Base Breakdown Voltage (I C = 10 µAdc) V (BR)CEO VF @T A=125℃ NOTES: V (BR)CBO 0.50 IR Emitter–Base Breakdown Voltage ℃/W PF -55 to +150 ℃ ℃ Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage - 65 to +175 TSTG Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc) 0.031(0.8) Typ. 1 BASE Vdc Dimensions in inches and (millimeters) EMITTER Characteristic 3 0.040(1.0) COLLECTOR Vdc Vdc 0.5 10 0.85 0.9 0.92 Volts mAmps Vdc (I E = 10 µAdc) ( V CE = 30Vdc, V BE = 3.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal ELECTRICAL CHARACTERISTICS (T A resistance. = 25°C unless otherwise noted) (Continued) application in order to • Low profile surface mounted Characteristic Symbol optimize board space. ON CHARACTERISTICS (3) • Low power loss, high efficiency. DC Current Gain(1)low forward voltage drop. capability, • High current (I =0.1 mAdc, V CE =1.0 Vdc) C capability. • High surge (I = 1.0 mAdc, V CE = protection. 1.0 Vdc) C for overvoltage • Guardring (I = 10 mAdc, V = 1.0 Vdc) C CE switching. • Ultra high-speed = 50mAdc, V = 1.0Vdc) planar chip, metal silicon junction. • Silicon(Iepitaxial C CE meetVenvironmental standards of • Lead-free (I C =parts 100mAdc, =1.0 Vdc) CE MIL-STD-19500 /228 Saturation Voltage Collector–Emitter for packing code suffix "G" • RoHS product (I C = 10 mAdc, I B = 1.0 mAdc)(3) Halogen free product for packing code suffix "H" (I C = 50 mAdc, I B = 5.0mAdc) Mechanical data Base–Emitter Saturation Voltage(3) rated retardant • Epoxy(I: CUL94-V0 = 10 mAdc, I B =flame 1.0mAdc) –– –– –– 300 –– –– –– –– 0.2 0.3 0.65 –– 0.85 0.95 Input Capacitance 0.071(1.8) 0.056(1.4) Vdc Vdc 0.031(0.8) Typ. fT Unit 0.012(0.3) Typ. 40 70 100 60 30 V BE(sat) Method 2026 Current–Gain — Bandwidth Product 0.146(3.7) 0.130(3.3) VCE(sat) • Polarity (I C: =Indicated 10mAdc, by V CEcathode = 20Vdc,band f = 100MHz) Position : Any • Mounting Output Capacitance 0, f = gram 1.0 MHz) CB = 5.0Vdc, I E =0.011 • Weight(V: Approximated SOD-123H Max hFE I B =SOD-123H 5.0mAdc ) plastic, • Case :(IMolded C = 50mAdc, , • Terminals :Plated terminals, solderable per MIL-STD-750 SMALL–SIGNAL CHARACTERISTICS MAXIMUM (V I C = 0, f = 1.0AND MHz) ELECTRICAL BE = 0.5Vdc, RATINGS Min 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 300in inches and–– Dimensions (millimeters) MHz C obo –– 4.0 pF C ibo –– 8.0 pF CHARACTERISTICS Impedancen Ratings at 25℃Input ambient temperature unless otherwise specified. 1.0 10 kW h ie (V = 10Vdc, f = 1.0 kHz) CE C = 1.0mAdc, Single phase half wave, 60Hz,I resistive of inductive load. Voltage Feedback For capacitive load, derate currentRatio by 20% 0.5 8.0 X10 –4 h re (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH RATINGS Small–Signal Current Gain 100 — 115 Marking Code 12 13 14 h fe 15 16 18 400 10 120 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Output Admittance Volts 1.0 14 21 28 h oe 35 42 56 40 70 105 140 Maximum RMS Voltage VRMS mmhos (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Noise Figure NF — 5.0 dB Amps Maximum Average Forward Rectified Current 1.0 (V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0IOk Ω, f = 1.0 kHz) Peak ForwardSWITCHING Surge Current 8.3 ms single half sine-wave CHARACTERISTICS 30 IFSM Amps superimposed on rated load (JEDEC method) Delay Time Rise Time Typical Junction Capacitance (Note 1) Storage Time Operating Temperature Range Fall Time Typical Thermal Resistance (Note 2) Storage Temperature Range (V CC = 3.0 Vdc,V BE = –0.5Vdc ΘJA I C = 10RmAdc, I B1 = 1.0mAdc) CJ (V CC = 3.0Vdc, -55 to +125 J I C = 10 T mAdc,I B1 = I B2 = 1.0 mAdc) TSTG td tr ts tf — 40 — 120 — — - 65 to +175 35 ns 35 200 -55 to +150 ns 50 ℃/W PF ℃ ℃ 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. +3 V • Low power loss, high efficiency. 10 < t < 500 µs DUTY CYCLE = 2% capability, low forward voltage drop. • High current DUTY CYCLE = 2% 275 300 nscapability. +10.9 V • High surge • Guardring for overvoltage protection. 10 k 0 • Ultra high-speed switching. –0.5 V epitaxial planar chip, metal silicon junction. • Silicon C < 4 pF* < 1 ns standards of • Lead-free parts meet environmental 1 0.146(3.7) 0.130(3.3) t1 +3 V 0.012(0.3) Typ. +10.9 V 275 10 k 0.071(1.8) 0.056(1.4) S C S < 4 pF* 1N916 –9.1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" < 1 ns * Total shunt capacitance of test jig and connectors Halogen free product for packing code suffix "H" Mechanical data Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time 0.040(1.0) flame retardant • Epoxy : UL94-V0 rated Equivalent Test Circuit • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Equivalent Test Circuit 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band TYPICAL TRANSIENT CHARACTERISTICS • Mounting Position : Any • Weight : Approximated 0.011 gram T J = 25°C T J = 125°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 5.0 RATINGS V CC = 40 V I C /I B = 10 3000 2000 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage C ibo 3.0 Maximum RMS Voltage 2.0 Voltage Maximum DC Blocking C obo Maximum Average Forward Rectified Current 5000 Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 0.1 (JEDEC 0.2 0.3 method) 0.5 0.7 1.0 superimposed on rated load 2.0 3.0 VRRM 12 20 13 30 VRMS 14 21 VDC 20 30 IO IFSM 5.0 7.0 10 Storage Temperature Range 1000 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 QT 70 105 140 Volts 300 40 200 50 60 80 100 150 200 Volts 700 500 1.0 30 100 70 50 20 30 40 RΘJA REVERSE BIAS VOLTAGE (VOLTS) Typical Junction Capacitance (Note 1) CJ Figure 3. Capacitance Operating Temperature Range TJ Typical Thermal Resistance (Note 2) Q, CHARGE (pC) Marking Code CAPACITANCE (pF) Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load,7.0derate current by 20% 1.0 2.0 3.0 5.0 7.0 10 QA Amps 20 30 50 70 100 Amps 200 40 I C , COLLECTOR CURRENT (mA) 120 Figure 4. Charge Data -55 to +150 ℃/W -55 to +125 PF ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch process 500 500 better reverse leakage current and thermal resistance. I C /I B = 10 300 surface mounted application in order to • Low profile 200 optimize board space. loss, high efficiency. • Low power 100 capability, low forward voltage drop. • High current 70 t r @ V CC = 3.0 V capability. • High surge 50 • Guardring for overvoltage protection. 30 40 V switching. • Ultra high-speed 20 • Silicon epitaxial planar chip, metal silicon junction. 15 V • Lead-free 10 parts meet environmental standards of MIL-STD-19500 /228 2.0 V 7 t d @ V OB = 0 V for packing code suffix "G" • RoHS product 5 1.0product 2.0 for 3.0packing 5.0 7.0 code 10 20 "H" 30 50 70 100 200 Halogen free suffix SOD-123H t r, RISE TIME (ns) TIME (ns) I C /I B = 10 0.146(3.7) 0.130(3.3) 100 70 30 20 0.071(1.8) 0.056(1.4) 10 7 5 1.0 5. Turn–On Time flame retardant • Epoxy : UL94-V0 ratedFigure plastic, SOD-123H • Case : Molded 500 , t ’s = t s –1 /8 tf • Terminals 300:Plated terminals, solderable per MIL-STD-750 I C /I B =10 200 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. I C /I B = 20 Dimensions in inches and (millimeters) 50 30 I C /I B = 10 20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. 7 For capacitive load,5derate current by 20% 1.0 2.0 3.0 5.0 7.0 10 RATINGS 20 30 50 70 100 10 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 I C , COLLECTOR CURRENT (mA) Marking Code 12 Figure 7. Storage Time 20 Maximum Recurrent Peak Reverse Voltage VRRM 13 30 14 40 15 50 VRMS 14 21 28 35 42 56 VDC 20 30 40 50 60 80 Maximum DC Blocking Voltage 50 70 100 I C , COLLECTOR CURRENT (mA) 16 18 10 Figure 8. 80 Fall Time 60 100 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS IO 1.0 NOISE FIGURE VARIATIONS Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM (V CE 200 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 12 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts Amps = 5.0 Vdc, T A = 25°C, Bandwidth = 1.030 Hz) RΘJA Typical Thermal Resistance (Note 2) -55 to +125 SOURCE RESISTANCE=200Ω TSTG Amps 40 120 Storage Temperature10 Range I C = 1.0 mA NF, NOISE FIGURE (dB) 30 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum RMS Voltage 50 70 100 V CC = 40 V I B1 = I B2 100 70 14 f = 1.0 kHz ℃/W PF -55 to +150 ℃ I = 1.0 mA C - 65 to +175 12 NF, NOISE FIGURE (dB) 30 300 200 I C /I B =20 30 20 20 500 0.031(0.8) Typ. I B1 = I B2 • Polarity100 : Indicated by cathode band • Mounting70Position : Any 50 • Weight : Approximated 0.011 gram 5.0 7.0 10 Figure 6. Rise Time t f, , FALL TIME (ns) t ’s , STORAGE TIME (ns) I /I B =10 2.0 3.0 I C , COLLECTOR CURRENT (mA) C I C /I B =202026C Method 0.012(0.3) Typ. 50 Mechanical data I , COLLECTOR CURRENT (mA) 200 V CC = 40 V 300 200 ℃ I C = 0.5 mA 10 SOURCE RESISTANCE =200ΩFM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL 8 I C = 50 µA Volts 0.9 Maximum Forward Voltage at 1.0A DC I C = 0.5 mA 0.92 VF 0.50 0.70 0.85 8 6 SOURCE RESISTANCE =1.0k Maximum Average Reverse Current at @T A=25℃ I C = 50µA @T A=125℃ Rated DC Blocking Voltage NOTES: 4 IR 2 SOURCE RESISTANCE=500Ω 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. I C = 100 µA 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.5 6 I C = 100 µA mAmps 10 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 9. Figure 10. 100 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offersh PARAMETERS better reverse leakage current and thermal resistance. (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power 300 loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring 200 for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free 100 parts meet environmental standards of hoe , OUTPUT ADMITTANCE (m mhos) hfe, CURRENT • 0.146(3.7) 0.130(3.3) 100 MIL-STD-19500 /228 70 RoHS product for packing code suffix "G" Halogen 50 free product for packing code suffix "H" Mechanical data rated flame retardant • Epoxy : UL94-V0 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 plastic, SOD-123H • Case : Molded , I C , COLLECTOR CURRENT (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 20 0.071(1.8) 0.056(1.4) 10 5 2 0.040(1.0) 0.024(0.6) 1 0.1 0.2 RATINGS 3.0 5.0 10 0.031(0.8) Typ. Dimensions in inches and (millimeters) 10 7.0 5.0 0.2 12 20 VRRM 13 30 0.3 0.5 1.0 10 Figure 13. Input Impedance Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 Typical Thermal Resistance (Note 2) 14 15 50 40 0.5 21 28 30 40 0.1 0.2 35 16 60 0.3 CJ TJ Operating Temperature Range Storage Temperature1.0Range TSTG 0.7 CHARACTERISTICS 18 80 0.5 10 100 1.0 42 2.0 56 3.0 70 115 150 5.0 CURRENT (mA) 50I C , COLLECTOR 60 80 100 Figure 14. Voltage Feedback Ratio 1.0 120 200 Volts 105 140 Volts 150 200 Volts 10 Amps IFSM 2.0 Typical Junction Capacitance (Note 1) T J = +125°C -55 to +125 30 Amps 40 120 ℃/W PF -55 to +150 V CE = 1.0 V ℃ - 65 to +175 +25°C ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT –55°C Volts 0.9 0.92 VF 0.50 0.70 0.85 0.5 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 0.5 IR @T A=125℃ 0.3 Voltage 0.7 TYPICAL STATIC CHARACTERISTICS RΘJA superimposed on rated load (JEDEC method) Rated DC Blocking 2.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 2.0 3.0 5.0 14 V RMS I , COLLECTOR CURRENT (mA) Maximum DC Blocking Voltage C 20 VDC h FE, DC CURRENT GAIN (NORMALIZED) h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) hie, INPUT IMPEDANCE (kΩ) 0.5 0.1 Maximum RMS Voltage NOTES: 2.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3.0 2.0 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 1.0 For capacitive load, derate current by 20% 1.0 I C , COLLECTOR CURRENT (mA) 5.0 0.2Peak Reverse Voltage Maximum Recurrent 0.5 Figure 12. Output Admittance • Polarity 20 : Indicated by cathode band • Mounting Position : Any 10 • Weight : Approximated 0.011 gram Marking Code 0.3 0.031(0.8) Typ. Figure 11. Current Gain Method 2026 0.012(0.3) Typ. 50 mAmps 10 0.2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. 1.0 current capability, low forward voltage drop. • High • High surge capability. for overvoltage protection. • Guardring 0.8 I C = 1.0 mA 10 mA • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon 0.6 • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. T J = 25°C 30 mA 100 mA 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 0.4 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Mechanical data 0.2 • Epoxy : UL94-V0 rated flame retardant 0 : Molded plastic, SOD-123H • Case , 0.01 0.02 0.03 0.05 0.07 0.1 0.2 • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.3 0.5 0.7 0.031(0.8) Typ. 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 1.2 Dimensions in inches and (millimeters) Figure 16. Collector Saturation Region 1.0 T J = 25°C V, VOLTAGE (VOLTS) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS @ I C /I B =10 V BE(sat) 0.5 0.6 RATINGS 12 20 Maximum Recurrent Peak Reverse Voltage V CE(sat) @ I C /I BV=10 RRM 13 30 Maximum RMS 0.2 Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 IO 50 Peak Forward Surge Current 8.3 ms single half sine-wave I , COLLECTOR CURRENTIFSM (mA) Maximum +25°C TO +125°C θ VC FOR V CE(sat) 0 –55°C TO +25°C –0.5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT +25°C TO +125°C Marking Code0.4 0 Average 1.0 COEFFICIENT(mV/°C) 1.0 Ratings at 25℃ ambient temperature unless otherwise specified. 0.8half wave, 60Hz, resistive of inductive load. Single phase V BE @ V CE =1.0 V For capacitive load, derate current by 20% Forward Rectified Current 2.0 3.0 5.0 10 20 14 –1.0 –1.5 28 35θ 40 50 –2.0 100 200 0 C superimposed on rated load (JEDEC method) Figure 17. “ON” Voltages RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 15 50 40 20 16 60 VB 18 80 FOR V42 BE(sat) 60 10 100 56 80 120 200 Volts 70 105 140 Volts 100 150 200 Volts 1.0 80 100 120 140 160 30 I C , COLLECTOR CURRENT (mA) 40 115 150 –55°C TO +25°C 60 180 Amps 200 Amps Figure 18. Temperature Coefficients 40 120 -55 to +125 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop.SOT-23 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .122(3.10) .106(2.70) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .083(2.10) .063(1.60) .047(1.20) • RoHS product for packing code suffix "G" 0.012(0.3) Typ. .006(0.15)MIN. MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .080(2.04) .070(1.78) .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .004(0.10)MAX. superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ .020(0.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .012(0.30) Volts 0.9 0.92 VF 0.50 0.70 0.85 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IR 0.5 10 mAmp Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3904LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) • High current capability, low forward (1) voltage drop. MMBT3904LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.