WILLAS FM120-M+ 8550HXLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • Low power loss, high efficiency. • High current capability, low forward voltage drop. surge capability. • High FEATURE for overvoltage • Guardring ƽHigh current capacity inprotection. compact package. switching. • Ultra Ihigh-speed C =1.5A. • Silicon epitaxial planar chip, metal silicon junction. ƽEpitaxial planar type. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ƽPNP complement: MIL-STD-19500 /228 8550H ƽWe product for packing suffixof "G" declare that thecode material product compliance with RoHS requirements. • RoHS SOT–23 Pb-Free package is available Halogen free product for packing code suffix "H" Mechanical data RoHS product for packing code suffix ”G” COLLECTOR 0.040(1.0) 0.024(0.6) 3 Halogen freerated product forretardant packing code suffix “H” : UL94-V0 flame • Epoxy Moisture Sensitivity Level 1 • Case : Molded plastic, SOD-123H DEVICE MARKING AND ORDERING INFORMATION, • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ry Device Method 2026 0.031(0.8) Typ. 1 BASE Shipping Marking 8550HQLT1 1HD Polarity : Indicated by cathode band 3000/Tape&Reel Dimensions in inches and (millimeters) 2 EMITTER im ina • Position : Any • Mounting Y2 8550HRLT1 • Weight : Approximated 0.011 gram 3000/Tape&Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Single phaseCollector-Emitter half wave, 60Hz,Voltage resistive of inductive load. VCEO For capacitive load, derate current Collector-Base Voltageby 20% VCBO Maximum Recurrent Peak Reverse Voltage THERMAL CHARACTERISTICS Maximum RMS Voltage Characteristic Maximum DC Blocking Voltage VRMS VDC TotalForward Device Rectified Dissipation FR-5 Board,(1) IO Maximum Average Current TA=25°C Peak Forward Surge Current 8.3 ms single half sine-wave Derate above 25°Cmethod) superimposed on rated load (JEDEC 14 21 28 20 Symbol 30 R θJ A Total Device Dissipation Operating Temperature Range PD to +125 -55 Alumina Substrate,(2) TA=25°C Storage Temperature Range Derate above 25°C CHARACTERISTICS TJ 225 mW 1.8 mW/°C 556 °C/W 56 70 105 140 Volts 80 100 150 200 Volts 1.0 30 40 120 300 Amps Amps ℃/W PF -55 to +150 TSTG ℃ mW- 65 to +175 2.4 mW/°C 417 0.70 °C/W ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Thermal Resistance,Junction to Ambient VF Maximum Average Reverse Currentand at Storage @T A=25℃ Operating Junction Temperature Rated DC Blocking Voltage 42 PD IFSM CJ 35 40Max 50 Unit60 Typical ThermalThermal Resistance (Note 2) Resistance,Junction to AmbientRΘJA Typical Junction Capacitance (Note 1) Unit 25 V 40 V VEBO FM130-MH FM140-MH 5 V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM150-MH SYMBOL FM120-MH C I 1500 mAdc 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Volts VRRM Pr el Emitter-Base Voltage RATINGS Collector Current-continuoun Marking Code Max @T A=125℃ IR R θJ A T j,T St g 0.50 -55 to +150 °C 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-07 2012-06 WILLASWILLAS ELECTRONIC CORP. CORP. ELECTRONIC WILLAS FM120-M+ 8550HXLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application(T inA=25°C order to • Low ELECTRICAL CHARACTERISTICS unless otherwise noted) optimize board space. Characteristic Symbol loss, high efficiency. • Low power current capability, low forward voltage drop. • High OFF CHARACTERISTICS • High surge capability. for overvoltage protection. • Guardring Collector-Emitter Breakdown Voltage V(BR)CEO • Ultra high-speed switching. (I C=1.0mA) • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental • Lead-free Emitter-Base Breakdown Voltage standards of Min Typ Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 25 – – V(BR)EBO 5 – – V(BR)CBO 40 – – UL94-V0 rated flame retardant • Epoxy(I:C=100µΑ) : MoldedCutoff plastic, SOD-123H • Case Collector Current (VCB=35V) ICBO , • Terminals :Plated terminals, solderable per MIL-STD-750 – – 150 0.031(0.8) Typ. nA – 150 nA MIL-STD-19500 /228 for packing code suffix "G" • RoHS (Iproduct E=100µΑ) V 0.071(1.8) 0.056(1.4) V Halogen free product for packing code suffix "H" Emitter Cutoff Current (VEB=4V) Method 2026 0.031(0.8) Typ. V 0.040(1.0) 0.024(0.6) ry Collector-Base Breakdown Voltage Mechanical data IEBO – ON CHARACTERISTICS im ina ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Position : Any • Mounting Characteristic Symbol Min Typ Max Unit • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DC Current Gain Ratings at 25℃ ambient temperature unless otherwise specified. CE=1V =100mA,V hFE Single phase halfICwave, 60Hz, resistive of inductive load. - 600 For capacitive load, derate current bySaturation 20% Collector-Emitter Voltage RATINGS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 21 28 35 42 56 VDC 20 30 40 50 60 80 Pr el (IC=800mA,IB=80mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VCE(S) 12 13 20 30 Marking Code Maximum DC Blocking Voltage 120 NOTE : Maximum Average Forward Rectified Current * 4 Peak Forward Surge Current 8.3 hFms E single half sine-wave IO R 200~400 IFSM Typical Thermal Resistance (Note 2) RΘJA 150~300 superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 - 16 60 0.5 18 80 10 100 V 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-07 2012-06 WILLASWILLAS ELECTRONIC CORP. CORP. ELECTRONIC WILLAS FM120-M+ 8550HXLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. SOT-23 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) .122(3.10) Halogen free product for packing code suffix "H" .106(2.70) • RoHS product for packing code suffix "G" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS Marking Code .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Pr el Maximum Recurrent Peak Reverse Voltage .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ .020(0.50) TSTG .012(0.30) Operating Temperature Range Storage Temperature Range CHARACTERISTICS -55 to +125 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .083(2.10) 0.031(0.8) Typ. ry 0.031(0.8) Typ. .110(2.80) MIL-STD-19500 /228 0.012(0.3) Typ. 0.50 0.70 IR Dimensions in inches and (millimeters) @T A=125℃ 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-07 ELECTRONIC WILLASWILLAS ELECTRONIC CORP. CORP. WILLAS FM120-M+ 8550HXLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Ordering Information: optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.012(0.3) Typ. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (2) (1) capability. LT1 G ‐WS • High surge 8550H x Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.071(1.8) high-speed switching. • Ultra 0.056(1.4) epitaxial planar chip, metal silicon junction. • Silicon (2) CLASSIFICATION OF hFE RANK • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ Pr el im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-07 2012-06 WILLASWILLAS ELECTRONIC CORP. CORP. ELECTRONIC