8550HxLT1(SOT 23)

WILLAS
FM120-M+
8550HXLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
PNP
Silicon
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
surge capability.
• High
FEATURE
for overvoltage
• Guardring
ƽHigh current
capacity inprotection.
compact package.
switching.
• Ultra Ihigh-speed
C =1.5A.
• Silicon epitaxial planar chip, metal silicon junction.
ƽEpitaxial planar type.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
ƽPNP complement:
MIL-STD-19500
/228 8550H
ƽWe
product
for packing
suffixof
"G"
declare
that thecode
material
product compliance with RoHS requirements.
• RoHS
SOT–23
Pb-Free
package
is available
Halogen
free product
for packing
code suffix "H"
Mechanical
data
RoHS product
for packing code suffix ”G”
COLLECTOR
0.040(1.0)
0.024(0.6)
3
Halogen
freerated
product
forretardant
packing code suffix “H”
: UL94-V0
flame
• Epoxy
Moisture Sensitivity Level 1
• Case : Molded plastic, SOD-123H
DEVICE MARKING AND ORDERING INFORMATION,
• Terminals
:Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ry
Device Method 2026
0.031(0.8) Typ.
1
BASE
Shipping
Marking
8550HQLT1
1HD
Polarity
: Indicated by cathode band
3000/Tape&Reel
Dimensions in inches and (millimeters) 2
EMITTER
im
ina
•
Position : Any
• Mounting
Y2
8550HRLT1
• Weight : Approximated 0.011 gram
3000/Tape&Reel
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
RATINGS
Ratings at 25℃ ambient
temperature unless otherwise specified.
Rating
Symbol
Single phaseCollector-Emitter
half wave, 60Hz,Voltage
resistive of inductive load.
VCEO
For capacitive
load, derate current
Collector-Base
Voltageby 20%
VCBO
Maximum Recurrent Peak Reverse Voltage
THERMAL CHARACTERISTICS
Maximum RMS Voltage
Characteristic
Maximum DC Blocking Voltage
VRMS
VDC
TotalForward
Device Rectified
Dissipation
FR-5 Board,(1) IO
Maximum Average
Current
TA=25°C
Peak Forward Surge Current 8.3 ms single half sine-wave
Derate
above
25°Cmethod)
superimposed on
rated load
(JEDEC
14
21
28
20 Symbol
30
R θJ A
Total Device
Dissipation
Operating Temperature
Range
PD to +125
-55
Alumina
Substrate,(2) TA=25°C
Storage Temperature
Range
Derate above 25°C
CHARACTERISTICS
TJ
225
mW
1.8
mW/°C
556
°C/W
56
70
105
140
Volts
80
100
150
200
Volts
1.0
30
40
120
300
Amps
Amps
℃/W
PF
-55 to +150
TSTG
℃
mW- 65 to +175
2.4
mW/°C
417
0.70
°C/W
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward
Voltage
at 1.0A DC
Thermal
Resistance,Junction
to Ambient VF
Maximum Average
Reverse
Currentand
at Storage
@T A=25℃
Operating
Junction
Temperature
Rated DC Blocking Voltage
42
PD
IFSM
CJ
35
40Max 50 Unit60
Typical ThermalThermal
Resistance
(Note 2)
Resistance,Junction
to AmbientRΘJA
Typical Junction Capacitance (Note 1)
Unit
25
V
40
V
VEBO FM130-MH FM140-MH
5
V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
FM150-MH
SYMBOL FM120-MH
C
I
1500
mAdc
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Volts
VRRM
Pr
el
Emitter-Base
Voltage
RATINGS
Collector
Current-continuoun
Marking Code
Max
@T A=125℃
IR
R θJ A
T j,T St g
0.50
-55 to +150
°C
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-07
2012-06
WILLASWILLAS
ELECTRONIC
CORP. CORP.
ELECTRONIC
WILLAS
FM120-M+
8550HXLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
profile surface
mounted application(T
inA=25°C
order to
• Low
ELECTRICAL
CHARACTERISTICS
unless otherwise noted)
optimize board space.
Characteristic
Symbol
loss, high efficiency.
• Low power
current capability, low forward voltage drop.
• High
OFF CHARACTERISTICS
• High surge capability.
for overvoltage
protection.
• Guardring
Collector-Emitter
Breakdown
Voltage
V(BR)CEO
• Ultra high-speed switching.
(I
C=1.0mA)
• Silicon epitaxial planar chip, metal silicon junction.
parts meet
environmental
• Lead-free
Emitter-Base
Breakdown
Voltage standards of
Min
Typ
Max
Unit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
25
–
–
V(BR)EBO
5
–
–
V(BR)CBO
40
–
–
UL94-V0 rated flame retardant
• Epoxy(I:C=100µΑ)
: MoldedCutoff
plastic,
SOD-123H
• Case Collector
Current
(VCB=35V)
ICBO
,
• Terminals :Plated terminals, solderable per MIL-STD-750
–
–
150
0.031(0.8) Typ.
nA
–
150
nA
MIL-STD-19500 /228
for packing code suffix "G"
• RoHS (Iproduct
E=100µΑ)
V
0.071(1.8)
0.056(1.4)
V
Halogen free product for packing code suffix "H"
Emitter Cutoff Current (VEB=4V)
Method 2026
0.031(0.8) Typ.
V
0.040(1.0)
0.024(0.6)
ry
Collector-Base
Breakdown Voltage
Mechanical
data
IEBO
–
ON CHARACTERISTICS
im
ina
ELECTRICAL
CHARACTERISTICS
(TA=25°C unless otherwise noted) Dimensions in inches and (millimeters)
• Polarity
: Indicated
by cathode band
Position
:
Any
• Mounting
Characteristic
Symbol
Min
Typ
Max
Unit
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DC Current Gain
Ratings at 25℃ ambient temperature unless otherwise specified.
CE=1V
=100mA,V
hFE
Single phase halfICwave,
60Hz,
resistive of inductive load.
-
600
For capacitive load,
derate current bySaturation
20%
Collector-Emitter
Voltage
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
VDC
20
30
40
50
60
80
Pr
el
(IC=800mA,IB=80mA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VCE(S)
12
13
20
30
Marking Code
Maximum DC Blocking Voltage
120
NOTE :
Maximum Average Forward Rectified
Current
*
4
Peak Forward Surge Current 8.3
hFms
E single half sine-wave
IO R
200~400
IFSM
Typical Thermal Resistance (Note 2)
RΘJA
150~300
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
-
16
60
0.5
18
80
10
100
V
115
150
120
200
Volts
70
105
140
Volts
100
150
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-07
2012-06
WILLASWILLAS
ELECTRONIC
CORP. CORP.
ELECTRONIC
WILLAS
FM120-M+
8550HXLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
SOT-23
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
.063(1.60)
.047(1.20)
.122(3.10)
Halogen free product for packing code suffix "H"
.106(2.70)
• RoHS product for packing code suffix "G"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
im
ina
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.080(2.04)
.070(1.78)
RATINGS
Marking Code
.008(0.20)
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Pr
el
Maximum Recurrent Peak Reverse Voltage
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
.020(0.50)
TSTG
.012(0.30)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
-55 to +125
40
120
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
.083(2.10)
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
.110(2.80)
MIL-STD-19500 /228
0.012(0.3) Typ.
0.50
0.70
IR
Dimensions
in inches and (millimeters)
@T A=125℃
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-07
ELECTRONIC
WILLASWILLAS
ELECTRONIC
CORP. CORP.
WILLAS
FM120-M+
8550HXLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Ordering Information: optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.012(0.3) Typ.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(2)
(1)
capability. LT1 G ‐WS • High surge 8550H x
Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.071(1.8)
high-speed switching.
• Ultra
0.056(1.4)
epitaxial
planar
chip,
metal
silicon
junction.
• Silicon
(2) CLASSIFICATION OF hFE RANK • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amps
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge
Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
Pr
el
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmps
10
@T
A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-07
2012-06
WILLASWILLAS
ELECTRONIC
CORP. CORP.
ELECTRONIC
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