8550xLT1(SOT 23)

WILLAS
FM120-M+
8550xLT1 THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
PNP
Silicon
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
FEATURE
• High current capability, low forward voltage drop.
0.012(0.3) Typ.
High
surge that
capability.
•We
declare
the material of product compliance with RoHS requirements.
Guardring for overvoltage protection.
•Pb-Free
package is available
• Ultra high-speed switching.
product for packing code suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
•RoHS
product
for packing code
suffix of
“H”
Lead-freefree
parts
meet environmental
standards
•Halogen
0.071(1.8)
0.056(1.4)
MIL-STD-19500
/228Level 1
Moisture
Sensitivity
product for packing code suffix "G"
• RoHS MARKING
DEVICE
AND ORDERING INFORMATION
Halogen free product for packing code suffix "H"
Marking
Device
Mechanical
data
Shipping
SOT– 23
3000/Tape&Reel
8550PLT1
85P
retardant
• Epoxy : UL94-V0 rated flame
8550QLT1
1YD
• Case : Molded plastic, SOD-123H
3000/Tape&Reel
,
• Terminals :Plated terminals,
solderable per MIL-STD-750
8550RLT1
1YF
3000/Tape&Reel
Method 2026
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Mounting
Position : Any
•
MAXIMUM
RATINGS
• WeightRating
: Approximated 0.011 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Symbol
Value
Unit
Collector-Emitter Voltage
V CEO
25
V
MAXIMUM
CHARACTERISTICS
Collector-Base
voltage RATINGS AND ELECTRICAL
V CBO
40
V
Emitter-base
Voltagetemperature unless otherwiseVspecified.
5
V
Ratings
at 25℃ ambient
EBO
Collector
current-continuoun
IC
800
mAdc
Single
phase half
wave, 60Hz, resistive of inductive load.
0.040(1.0)
0.024(0.6)
COLLECTOR
3
1
BASE
For capacitive
load,
derate current by 20%
THERMAL
CHARACTERISTICS
2
CharacteristicRATINGS
SymbolFM120-MH
Max
Unit
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL
EMITTER
(1)
Total
Device
Dissipation
FR5
Board
P
D
Marking Code
12
13
14
15
16
18
10
115
120
T A =Recurrent
25 °C
20 225 30 mW40
50
60
80
100
150
200
Maximum
Peak Reverse Voltage
VRRM
Derate above 25 °C
14 1.8 21 mW /°C
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Thermal Resistance, Junction to Ambient
R θJA
556
°C/W
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Total Device Dissipation
PD
Maximum Average Forward Rectified Current
IO
1.0
Alumina Substrate, (2) T A = 25 °C
300
mW
Derate
above
25
°C
2.4
mW
/°C
Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
ThermalonResistance,
Junction
to Ambient
R θJA
417
°C/W
superimposed
rated load (JEDEC
method)
Junction
and
Storage
Temperature
T
-55
to
+150
°C
J , T stg
40
Typical Thermal Resistance (Note 2)
RΘJA
DEVICE
MARKING
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
8550QLT1
= 1YD
-55 to +150
Operating
Temperature
Range8550PLT1 =85P
TJ
ELECTRICAL
CHARACTERISTICS (T A = 25TSTG
°C unless otherwise noted)
Storage
Temperature Range
Characteristic
CHARACTERISTICS
OFFCHARACTERISTICS
Maximum
Forward Voltage
at 1.0A DCVoltage
Collector-Emitter
Breakdown
Symbol
VF
@T A=125℃
RatedEmitter-Base
DC Blocking Voltage
Breakdown Voltage
(I E = 100µA)
NOTES:
Collector-Base Breakdown voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(I C= 100µA)
2- Thermal Resistance From Junction to Ambient
Collector Cutoff Current
(VCB = 35 V)
Emitter Cutoff Current
(VEB =4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-2012-06
Typ
Max
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
1.0mA) Reverse Current at @T A=25℃
(I C =Average
- 65 to +175
Min
IR
0.50
V (BR)CEO
25
V (BR)EBO
5
–
V (BR)CBO
40
I
CBO
I EBO
0.70
–
0.5
10
–
0.85
V
–
V
–
–
V
–
–
150
nA
–
–
150
nA
0.9
0.92
ELECTRONIC
WILLASWILLAS
ELECTRONIC
CORP.COR
WILLAS
FM120-M+
8550xLT1 THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ON CHARACTERISTICS
• Low profile surface mounted application in order to
optimize board space.
Characteristic
Symbol
Low
•
DC Currentpower
Gain loss, high efficiency.
h FE
• High current capability, low forward voltage drop.
(I C =100mA V CE=1V)
• High surge capability.
Collector-Emitter Saturation Voltage
V CE(S)
• Guardring for overvoltage protection.
(I C =800mA I B=80mA)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228 P
NOTE:
*
Q
R
for packing code suffix "G"
• RoHS product
hFE
100~200
150~300
200~400
Halogen free product for packing code suffix "H"
SOD-123H
Min
Typ
100
–
–
–
Max
Unit
0.146(3.7)
0.130(3.3)
400
0.012(0.3) Typ.
0.5
V
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
8550xLT1 THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
SOT-23
junction.
• Silicon epitaxial planar chip, metal silicon
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
.006(0.15)MIN.
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.063(1.60)
.047(1.20)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H.122(3.10)
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
.106(2.70)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
VRRM
12
20
13
30
VRMS
14
21
28
35
VDC
20
30
40
50
.080(2.04)
Maximum Recurrent Peak Reverse Voltage
.070(1.78)
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
15
50
.008(0.20)
16
18
60
80
.003(0.08)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
10
100
115
150
120
200
42
56
70
105
140
60
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
.020(0.50)
IR
.012(0.30)
@T A=125℃
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Dimensions in inches and (millimeters)
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
8550xLT1 THRU
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(2)
(1)
8550 x
LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring for overvoltage protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
epitaxial planar chip,
• Silicon
(2) CLASSIFICATION OF h
FE metal
RANK silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related 65
to
+175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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