WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) FEATURE • High current capability, low forward voltage drop. 0.012(0.3) Typ. High surge that capability. •We declare the material of product compliance with RoHS requirements. Guardring for overvoltage protection. •Pb-Free package is available • Ultra high-speed switching. product for packing code suffix ”G” Silicon epitaxial planar chip, metal silicon junction. •RoHS product for packing code suffix of “H” Lead-freefree parts meet environmental standards •Halogen 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228Level 1 Moisture Sensitivity product for packing code suffix "G" • RoHS MARKING DEVICE AND ORDERING INFORMATION Halogen free product for packing code suffix "H" Marking Device Mechanical data Shipping SOT– 23 3000/Tape&Reel 8550PLT1 85P retardant • Epoxy : UL94-V0 rated flame 8550QLT1 1YD • Case : Molded plastic, SOD-123H 3000/Tape&Reel , • Terminals :Plated terminals, solderable per MIL-STD-750 8550RLT1 1YF 3000/Tape&Reel Method 2026 0.031(0.8) Typ. • Polarity : Indicated by cathode band Mounting Position : Any • MAXIMUM RATINGS • WeightRating : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) Symbol Value Unit Collector-Emitter Voltage V CEO 25 V MAXIMUM CHARACTERISTICS Collector-Base voltage RATINGS AND ELECTRICAL V CBO 40 V Emitter-base Voltagetemperature unless otherwiseVspecified. 5 V Ratings at 25℃ ambient EBO Collector current-continuoun IC 800 mAdc Single phase half wave, 60Hz, resistive of inductive load. 0.040(1.0) 0.024(0.6) COLLECTOR 3 1 BASE For capacitive load, derate current by 20% THERMAL CHARACTERISTICS 2 CharacteristicRATINGS SymbolFM120-MH Max Unit FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL EMITTER (1) Total Device Dissipation FR5 Board P D Marking Code 12 13 14 15 16 18 10 115 120 T A =Recurrent 25 °C 20 225 30 mW40 50 60 80 100 150 200 Maximum Peak Reverse Voltage VRRM Derate above 25 °C 14 1.8 21 mW /°C 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Thermal Resistance, Junction to Ambient R θJA 556 °C/W Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Total Device Dissipation PD Maximum Average Forward Rectified Current IO 1.0 Alumina Substrate, (2) T A = 25 °C 300 mW Derate above 25 °C 2.4 mW /°C Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM ThermalonResistance, Junction to Ambient R θJA 417 °C/W superimposed rated load (JEDEC method) Junction and Storage Temperature T -55 to +150 °C J , T stg 40 Typical Thermal Resistance (Note 2) RΘJA DEVICE MARKING 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 8550QLT1 = 1YD -55 to +150 Operating Temperature Range8550PLT1 =85P TJ ELECTRICAL CHARACTERISTICS (T A = 25TSTG °C unless otherwise noted) Storage Temperature Range Characteristic CHARACTERISTICS OFFCHARACTERISTICS Maximum Forward Voltage at 1.0A DCVoltage Collector-Emitter Breakdown Symbol VF @T A=125℃ RatedEmitter-Base DC Blocking Voltage Breakdown Voltage (I E = 100µA) NOTES: Collector-Base Breakdown voltage 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (I C= 100µA) 2- Thermal Resistance From Junction to Ambient Collector Cutoff Current (VCB = 35 V) Emitter Cutoff Current (VEB =4V) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-2012-06 Typ Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum 1.0mA) Reverse Current at @T A=25℃ (I C =Average - 65 to +175 Min IR 0.50 V (BR)CEO 25 V (BR)EBO 5 – V (BR)CBO 40 I CBO I EBO 0.70 – 0.5 10 – 0.85 V – V – – V – – 150 nA – – 150 nA 0.9 0.92 ELECTRONIC WILLASWILLAS ELECTRONIC CORP.COR WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ON CHARACTERISTICS • Low profile surface mounted application in order to optimize board space. Characteristic Symbol Low • DC Currentpower Gain loss, high efficiency. h FE • High current capability, low forward voltage drop. (I C =100mA V CE=1V) • High surge capability. Collector-Emitter Saturation Voltage V CE(S) • Guardring for overvoltage protection. (I C =800mA I B=80mA) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 P NOTE: * Q R for packing code suffix "G" • RoHS product hFE 100~200 150~300 200~400 Halogen free product for packing code suffix "H" SOD-123H Min Typ 100 – – – Max Unit 0.146(3.7) 0.130(3.3) 400 0.012(0.3) Typ. 0.5 V 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 8550xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. SOT-23 junction. • Silicon epitaxial planar chip, metal silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 .006(0.15)MIN. • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .063(1.60) .047(1.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H.122(3.10) , • Terminals :Plated terminals, solderable per MIL-STD-750 .106(2.70) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 VRMS 14 21 28 35 VDC 20 30 40 50 .080(2.04) Maximum Recurrent Peak Reverse Voltage .070(1.78) Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 15 50 .008(0.20) 16 18 60 80 .003(0.08) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 10 100 115 150 120 200 42 56 70 105 140 60 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF .020(0.50) IR .012(0.30) @T A=125℃ Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Dimensions in inches and (millimeters) 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 8550xLT1 THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (2) (1) 8550 x LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, • Silicon (2) CLASSIFICATION OF h FE metal RANK silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.