8550SxLT1(SOT 23)

WILLAS
FM120-M
8550SxLT1THRU
FM1200-M
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Prod
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT-23
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
TRANSISTORoptimize
(PNP) board space.
Low power loss, high efficiency.
•
FEATURES
• High current capability, low forward voltage drop.
z
Pb-Free• High
package
is available
surge capability.
overvoltage
• Guardring
RoHS product
for for
packing
codeprotection.
suffix ”G”
• Ultra high-speed switching.
Halogen• Silicon
free product
for packing code suffix “H”
epitaxial planar chip, metal silicon junction.
z
Collector
current:
IC=0.5A
parts
meet environmental standards of
• Lead-free
/228 1
z
MoistureMIL-STD-19500
Sensitivity Level
• RoHS product for packing code suffix "G"
MARKING : Halogen
2TY free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
0.071(1.8)
0.056(1.4)
3. COLLECTOR
Mechanical data
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
• Epoxy : UL94-V0 rated flame retardant
Symbol• Case : Molded plastic, SOD-123HParameter
,
• Terminals
:Plated terminals,
Collector-Base
Voltagesolderable per MIL-STD-750
VCBO
0.040(1.0)
0.024(0.6)
Value
0.031(0.8) Typ.
-40
V
-25
V
-5
V
-0.5
A
0.3
W
150
℃
-55-150
℃
Method 2026
VCEO
Collector-Emitter Voltage
• Polarity : Indicated by cathode band
Emitter-Base Voltage
Position : Any
• Mounting
Collector
Current0.011
-Continuous
• Weight : Approximated
gram
VEBO
IC
PC
Dimensions in inches and (millimeters)
Collector Power Dissipation
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Tj
Junction Temperature
Ratings at 25℃ ambient temperature unless otherwise specified.
Storage
Single phase half
wave, Temperature
60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Tstg
Unit 0.031(0.8) Typ.
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise
specified)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
RATINGS
SYMBOL FM120-MH
Marking Code
Parameter
Maximum
Recurrent Peak Reverse Voltage
12
20
VRRM Symbol
Maximum RMS Voltage
VRMS
Collector-base
breakdown voltage
Maximum DC Blocking Voltage
VDC
14
V(BR)CBO
20
IO
V(BR)CEO
IFSM
Maximum Average Forward Rectified Current
Collector-emitter
breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
Emitter-base
breakdown
voltagemethod)
superimposed
on rated load (JEDEC
V(BR)EBO
CJ
ICBO
TJ
Operating Temperature Range
Collector
current
Storagecut-off
Temperature
Range
TSTG
21
28
16
60
35
ICEO
18
10
Min 80
42
I30
C = -100μA, IE=0
40
50
-40
60
Max
100
56
70
80
100
IE= -100μA, IC=0
V CB= -40V, IE=0
-55 to +125
120
200
105
140
150
200
V
-0.1
μA
-55 to +150
- 65 to +175
VCE= -20V, IB=0
115
V
-5
40
120
Unit
150
V
1.0
-25
30
IC =-1mA, IB=0
RΘJA
Typical Thermal Resistance (Note 2)
Collector
Typicalcut-off
Junction current
Capacitance (Note 1)
13
14
15
30 Test conditions
40
50
FM1200
-0.1
μA
CHARACTERISTICS
Emitter cut-off current
FM130-MH
FM140-MH
FM1150-MH FM1200SYMBOL IFM120-MH
VEB= -3V,
IC=0 FM150-MH FM160-MH FM180-MH FM1100-MH
-0.1
μA
EBO
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DCgain
Blocking Voltage
DC current
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector-emitter saturation voltage
2- Thermal Resistance From Junction to Ambient
Base-emitter
saturation voltage
Transition frequency
IR
0.50
0.70
0.9
0.85
0.5
120
0.92
hFE(1)
VCE= -1V, IC= -50mA
400
hFE(2)
VCE= -1V, IC= -500mA
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
VBE(sat)
IC=-500mA, IB= -50mA
-1.2
V
10
fT
VCE= -6V, IC= -20mA
f=30MHz
50
150
MHz
CLASSIFICATION OF hFE(1)
Rank2012-06
Range
2012-0
L
120-200
H WILLAS ELECTRONIC CO
200-350
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
THRU
8550SxLT1
FM1200-M
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Typical
Characteristics
• Batch process design, excellent power dissipation offers
Features
VCE
IC —— current
better reverse leakage
and thermal resistance.
application in order to
• Low profile surface mounted
-400uA
COMMON
-90
optimize board space.
-80
hFE
EMITTER
Ta=100℃
-360uA
T =25℃
• Low power loss, high efficiency.
-70
-320uA
voltage drop.
• High current capability, low forward
-280uA
-60
• High surge capability.
-240uA
-50• Guardring for overvoltage protection.
-200uA
• Ultra high-speed switching.
-40
silicon junction.
• Silicon epitaxial planar chip, metal-160uA
-30• Lead-free parts meet environmental standards of
-120uA
hFE
DC CURRENT GAIN
IC
(mA)
a
COLLECTOR CURRENT
IC SOD-123H
——
500
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=25℃
100
0.071(1.8)
0.056(1.4)
-80uA
• RoHS product for packing code suffix "G"
-20
IB=-40uA
Halogen free product for packing code suffix
"H"
-10
Mechanical data
COMMON EMITTER
VCE=-1V
-0
-0
-2
-4
10
-6
-8
-10
-12
-1
-10
V
(V)
UL94-V0 rated VOLTAGE
flame retardant
• Epoxy :COLLECTOR-EMITTER
• Case : Molded plastic, SOD-123H
VBEsat ——
IC
,
-1200• Terminals :Plated terminals, solderable per MIL-STD-750
-500
-100
COLLECTOR CURRENT
CE
0.031(0.8) Typ.
VCEsat
IC
-500
0.040(1.0)
0.024(0.6)
(mA)
0.031(0.8) Typ.
IC
——
a
=1
00 ℃
Dimensions in inches and (millimeters)
-100
T
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS 100 ℃
a
T a=
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
-100
COLLECTOR CURRENT
IC
-500
Maximum Recurrent Peak Reverse
Voltage
I —— V
C
-500
Maximum
RMS Voltage
BE
(mA)
Maximum DC Blocking Voltage
IC
T =2
5℃
a
T =1
00 ℃
a
COLLECTOR CURRENT
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
VRMS
14
VDC
20
IO
IFSM
Maximum
Average Forward Rectified Current
-100
VRRM
12
20
(mA)
RΘJA
Typical-10
Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-1
-0
-600
Maximum Forward Voltage
at 1.0A DC
BASE-EMMITER
VOLTAGE
-900
Rated DC
50 Blocking Voltage
——
400
14
40
-100
COLLECTOR
15 CURRENT
16
21
28
50
fT —— 60
IC
35
42
30
40
50
IC
-500
(mA)
18
10
100
115
150
120
200
56
70
105
140
80
100
150
200
80
60
1.0
30
100
40
120
-55 to +125
-55 to +150
- 65 toCOMMON
+175 EMITTER
VCE=-6V
Ta=25℃
10
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
VF
VBE (mV)
Maximum Average Reverse Current at @T A=25℃
Cob/Cib
13
30
-10
COMMON EMITTER
VCE=-1V
CHARACTERISTICS
-300
-1
(MHz)
Marking Code
β=10
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH -10
-10
fT
-1
℃
25
T a=
β=10
RATINGS
-400
TRANSITION FREQUENCY
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
-800
2 5℃
T=
• Weight : Approximated
0.011 gram
-1
-1200
0.50
-10
COLLECTOR 0.70
CURRENT
IR
VCB/VEB
@T A=125℃
PC
400
——
Ta
IC
0.85
(mA)
-100
0.9
0.5
0.92
10
COLLECTOR POWER DISSIPATION
PC (mW)
NOTES:
1- Measured at 1 MHZ and applied
C reverse voltage of 4.0 VDC.
C
10
Cob
CAPACITANCE
(pF)
ib
2- Thermal Resistance From Junction to Ambient
f=1MHz
IE=0/IC=0
100
WILLAS ELECTRONIC COR
0
-1
REVERSE VOLTAGE
2012-0
200
Ta=25 ℃
2012-06
1
-0.1
300
-10
V
(V)
-20
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
8550SxLT1
FM1200-M
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Outline Drawing
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.063(1.60)
.047(1.20)
• Epoxy : UL94-V0 rated flame retardant
.122(3.10)
• Case : Molded plastic, SOD-123H
,
.106(2.70)
• Terminals :Plated terminals, solderable
per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
.080(2.04)
Maximum Average Forward
Rectified Current
.070(1.78)
Maximum DC Blocking Voltage
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
10
100
80
100
.008(0.20)
56
70
1.0
30
18
80
.003(0.08)
40
120
-55 to +125
115
150
120
200
105
140
150
200
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.020(0.50)
.012(0.30)
2- Thermal Resistance From Junction to Ambient
2012-06
0.70
0.85
0.9
0.5
IR
0.50
10
Dimensions in inches and (millimeters)
WILLAS ELECTRONIC COR
Rev.D
2012-0
0.92
.055(1.40)
.035(0.89)
Maximum Forward Voltage at 1.0A DC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
8550SxLT1
FM1200-M+
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOD-123H
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Ordering
Information:
• High current capability, low forward voltage drop.
• High surge capability.
Device PN Packing • Guardring for overvoltage
(2)
(1)protection.
8550S x switching.
LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Ultra high-speed
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500
(2) CLASSIFICATION OF h
FE RANK /228
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
contained are intended to provide a product description only. "Typical" parameters V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
superimposed
on rated load (JEDEC method)
use of any product or circuit. ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating
Temperature Range
TJ
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
applications where a failure or malfunction of component or circuitry may directly V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DC
Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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