9013xLT1(SOT 23)

WILLAS
FM120-M+
9013xLT1 THRU
FM1200-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
NPN Silicon
Features
• Batch process design, excellent power dissipation offers
FEATURE
reverse
leakage
currentcompliance
and thermal
resistance.
We declarebetter
that the
material
of product
with
RoHS requirements.
Low profile
surface mounted application in order to
Pb-Free •package
is available
SOD-123H
optimize board space.
RoHS product
for packing
code suffix ”G”
loss, high efficiency.
• Low power
Halogen •free
product
for
packing
suffix “H”
High current capability, code
low forward
voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Moisture •Sensitivity
1
High surgeLevel
capability.
DEVICE•MARKING
ORDERING
INFORMATION
Guardring forAND
overvoltage
protection.
SOT-23
• Ultra high-speed switching.
Device
Marking
Shipping
• Silicon epitaxial planar chip, metal silicon junction.
9013PLT1
13P
3000/Tape&Reel
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
9013Q LT1
13Q
3000/Tape&Reel
• RoHS product for packing code suffix "G"
9013RLT1
3000/Tape&Reel
Halogen free product 13R
for packing code suffix
"H"
data
13S
3000/Tape&Reel
ry
9013SMechanical
LT1
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic, SOD-123H
• Case
MAXIMUM
RATINGS
,
• Terminals
solderable per
MIL-STD-750
Symbol
Value
Unit
Rating :Plated terminals,
ina
20
V
40
V
5
V
500
mAdc
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
1
BASE
Dimensions
in inches and (millimeters)
im
Method 2026
Collector-Emitter Voltage
VCEO
• Polarity : Indicated by cathode band
Collector-Base Voltage
VCBO
• Mounting Position : Any
Emitter-Base Voltage
VEBO
• Weight : Approximated 0.011 gram
Collector current-continuoun
IC
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
THERMAL CHARATEERISTICS
Ratings at 25℃ Characteristic
ambient temperature unless otherwise
specified.
Symbol
Single
phase
half
wave,
60Hz,
resistive
of
inductive
load.
Total Device Dissipation FR-5 Board, (1)
PD
For ocapacitive load, derate current by 20%
TA=25
C
Pr
el
o
Derate above 25 C
Marking Code
Max
RATINGS
225
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
o
1.8
Thermal
Resistance,
Junction
to Ambient
Maximum
Recurrent Peak
Reverse
Voltage
θ JA
VRRRM
12
20
556 30
Total
DeviceRMS
Dissipation
Maximum
Voltage
PD
VRMS
14
21
o
Maximum
DC Blocking
Alumina
Substrate,
(2) TVoltage
A=25 C
VDC
20 300 30
Maximum
Average
Derate
above
25 C Forward Rectified Current
IO
R θJA
IFSM
o
Thermal
Resistance, Junction to Ambient
Peak Forward Surge Current 8.3 ms single half sine-wave
Junction
and Storage
superimposed
on rated Temperature
load (JEDEC method)
Tj ,Tstg
DEVICE
MARKING
Typical Thermal
Resistance (Note 2)
RΘJA
Typical
Junction Capacitance
(Note 1)
9013QLT1=13Q
9013RLT1=13R
Operating Temperature Range
Unit
C
40/W
14
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
mW
50
60
80
100
150
200
Vo
o
1.0
30
mW/oC
2.4
o
C/ W
417
o
C
-55 to +150
CJ
9013SLT1=13S
TJ
mW/ C
13
Characteristic
CHARACTERISTICS
OFF CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Emitter Cutoff Current (VEB=4V)
2012-
-55 to +125
Min
PF
-55 to +150
Symbol
℃/
℃
- 65 to +175
Typ
℃
Max
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Collector-Emitter Breakdown Voltage
Maximum Average Reverse Current at @T A=25℃
IR
(IC=1.0mA)
@T A=125℃
Rated DC Blocking Voltage
Emitter-Base
Breakdown
Voltage
(IENOTES:
=100µA)
Collector-Base
Breakdown
Voltage
1- Measured at 1
MHZ and applied
reverse voltage of 4.0 VDC.
(IC2=100µA)
Thermal Resistance From Junction to Ambient
Collector
Cutoff Current (VCB=35V)
Am
40
120
o
Storage Temperature
Range
TSTG
C unless otherwise noted)
ELECTRICAL
CHARACTERISTICS
(TA=25
Am
V(BR)CEO
0.50
0.70
20
-
0.5
V(BR)EBO
5
-
V(BR)CBO
40
-
ICBO
IEBO
-
-
10
-
0.85
V
0.9
0.92
Vo
mA
-
V
-
V
150
nA
150
nA
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
9013xLT1 THRU
FM1200-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
ON CHARACTERISTICS
better reverse leakage current and thermal resistance.
DC Current
profile surface mounted application in order to
• LowGain
optimize
board space.
(IC=50mA,
VCE=1V)
Low power loss, high efficiency.
•
Collector-Emitter Saturation Voltage
• High current capability, low forward voltage drop.
(IC=500mA,IB=50mA)
• High surge capability.
• Guardring for overvoltage protection.
switching.
• Ultra high-speed
NOTE:
*
P
Q
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts
HFE meet environmental
100~200 standards
150~300
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Hfe
100
-
600
0.146(3.7)
0.130(3.3)
VCE(S)
-
R
-
0.012(0.3) Typ.
0.6
V
0.071(1.8)
0.056(1.4)
S
200~400
300~600
ry
Mechanical data
SOD-123H
• Epoxy : UL94-V0 rated flame retardant
SOT-23
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
.006(0.15)MIN.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
im
.063(1.60)
.047(1.20)
• Polarity : Indicated by cathode band
.122(3.10)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.106(2.70)
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Recurrent Peak Reverse Voltage
.080(2.04)
Maximum Average Forward Rectified
Current
.070(1.78)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature.004(0.10)MAX.
Range
115
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
Amp
30
40
120
-55 to +125
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
10
100
.008(0.20)
TSTG
CHARACTERISTICS
18
80
.003(0.08)
1.0
IO
IFSM
IR
@T A=125℃.020(0.50)
.012(0.30)
NOTES:
0.50
.055(1.40)
.035(0.89)
.110(2.80)
Pr
el
.083(2.10)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.70
0.85
0.9
0.92
0.5
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
Dimensions in inches and (millimeters)
WILLAS ELECTRONIC CORP.
Volt
mAm
WILLAS
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
9013xLT1 THRU
FM1200-M
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low powerDevice PN Packing 0.130(3.3)
low
forward
voltage
drop.
• High current capability,
(2)
(1)
LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• High9013 x
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• (2)
CLASSIFICATION OF h
FE RANK Silicon
epitaxial planar chip,
metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
0.012(0.3) Typ.
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single
phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
life‐saving implant or other applications intended for life‐sustaining or other related Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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