9014xLT1(SOT 23)

WILLAS
FM120-M+
9014xLT1 THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
NPN
Silicon
surface mounted application in order to
• Low profile
optimize board space.
• Low power loss, high efficiency.
FEATURE
• High current capability, low forward voltage drop.
• High surge capability.
ƽComplementary to 9015.
• Guardring for overvoltage protection.
ƽ• We
declare
that the
material of product compliance with RoHS requirements.
Ultra
high-speed
switching.
Pb-Free
package
is
chip, metal silicon junction.
• Silicon epitaxial planaravailable
Lead-free
partsfor
meet
environmental
standards
of
• RoHS
product
packing
code suffix
”G”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
• RoHS product for packing code suffix "G"
SOT– 23
Moisture
Sensitivity
1 code suffix "H"
Halogen free
product forLevel
packing
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
DEVICE MARKING AND ORDERING INFORMATION
• Case : Molded plastic, SOD-123H
Device :Plated terminals,
Marking
Shipping ,
• Terminals
solderable per MIL-STD-750
9014QLT1 Method 2026
14Q
0.031(0.8) Typ.
3
3000/Tape&Reel
• Polarity : Indicated by cathode band
9014RLT1
14R
• Mounting Position : Any
9014SLT1
14S
• Weight
: Approximated 0.011 gram
9014TLT1
COLLECTOR
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
1
3000/Tape&Reel
BASE
2
EMITTER
3000/Tape&Reel
14T
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SingleMAXIMUM
phase half wave,RATINGS
60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Rating
SYMBOLValue
FM120-MH FM130-MH
Symbol
UnitFM140-MH FM150-MH FM160-MH
Marking Code
VRRM
13
V
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Collector-Base
Maximum
RMS Voltage Voltage
VCBO VRMS
5014
21 V
28
35
42
56
70
105
140
Maximum
DC Blocking Voltage
Emitter-Base
Voltage
VEBO VDC
520
30 V
40
50
60
80
100
150
200
Collector-Emitter Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Rectified Current
Collector current-continuoun
VCEO
IO
IC
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
THERMAL
CHARATEERISTICS
superimposed
on rated load
(JEDEC method)
100
CJ
Typical Junction Capacitance
(Note 1)
Characteristic
Total Device Dissipation FR-5 Board, (1) TJ
Operating Temperature Range
Storage Temperature Range
TSTG
o
Symbol
PD
TA=25 C
CHARACTERISTICS
o
-55 to +125
Rated DC
Blocking
Voltage
Total
Device
Dissipation
@T A=125℃
IR
0.50
R©JA
Unit
-55 to +150
mW
556
mW/ C
o
0.70
C/W
Substrate, (2) TA=25 oC
Derate above 25oC
2- Thermal Resistance From Junction to Ambient
0.85
0.9
0.92
0.5
10
PD
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
300
mW
2.4
mW/oC
Thermal Resistance, Junction to Ambient
R©JA
417
Junction and Storage Temperature
TJ ,Tstg
-55 to +150
2012-06
40
120
- 65 to +175
1.8
VF
Thermal
Junction
Ambient
Maximum
AverageResistance,
Reverse Current
at @Tto
A=25℃
2012-
Max
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
o
Maximum Forward Voltage at 1.0A DC
NOTES:Alumina
mA
225
Derate above 25 C
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
45
20
o
C/W
o
C
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
9014xLT1 THRU
FM1200-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
to
• Low profile surface mounted application in order
o
ELECTRICAL
CHARACTERISTICS
(TA=25 C unless otherwise noted)
optimize
board space.
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
OFF CHARACTERISTICS
• High surge capability.
for overvoltage protection.
• GuardringCharacteristic
Symbol
• Ultra high-speed switching.
Collector-Emitter
Voltage
V(BR)CEO
epitaxial planar
chip, metal silicon junction.
• SiliconBreakdown
Lead-free
parts
meet
environmental
standards
of
•
(I =1.0mA)
C
0.012(0.3) Typ.
Min
Typ
Max
Unit
45
-
-
V
V(BR)EBO
5
-
-
V(BR)CBO
50
-
-
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
product for
packing code suffix "G"
• RoHS
Emitter-Base
Breakdown
Voltage
V
Halogen free product for packing code suffix "H"
(IE=100­A)
Mechanical
data
Collector-Base
Breakdown
: UL94-V0Voltage
rated flame retardant
• Epoxy
• Case : Molded plastic, SOD-123H
(IC=100­A)
• Terminals :Plated terminals, solderable per MIL-STD-750
I
Collector Cutoff Current (V =40V)
CB
Emitter Cutoff
Current
(VEB=3V)
• Polarity
: Indicated
by cathode band
V
0.031(0.8) Typ.
,
-
CBO
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-
IEBO
100
nA
100
nA
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
ON CHARACTERISTICS
DC Current Gain
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(IC=1mA,
VCE
Ratings
at =5V)
25℃ ambient temperature unless otherwise specified.HFE
150
-
1000
-
-
0.3
Single phase half
wave, 60Hz,
resistive of inductive load.
Collector-Emitter
Saturation
Voltage
For capacitive load, derate current by 20%
(IC =100mA,IB=5mA)
VCE
RATINGS
Marking Code
VRRM
R
Maximum Recurrent Peak
NOTE:
* Reverse Voltage
Q
Maximum RMS Voltage
HFE
Maximum DC Blocking Voltage
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
150~300
VRMS
200~400
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VDC
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
13
30
14
21
20
30
300~600
14
T40
15
50
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
400~1000
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
12
20 S
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
9014xLT1 THRU
FM1200-M+
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
STATIC
CHARACTERISTIC
current
capability, low forward voltage drop.
• High
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
DC CURRENT GAIN
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
BASE-EMITTER SATURATION VOLTAGE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
CURRENT GAIN-BANDWIDTH PRODUCT
COLLECTOR-EMITTER SATURATION VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
9014xLT1 THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
optimize board space.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
of
• Lead-free parts meet environmental standards
.106(2.70)
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
Mechanical data
.110(2.80)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.008(0.20)
.080(2.04)
.070(1.78)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.020(0.50)
TSTG
.012(0.30)
Storage Temperature Range
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
1.0
30
.055(1.40)
.035(0.89)
.083(2.10)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
Dimensions in inches and (millimeters)
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
9014xLT1 THRU
FM1200-M+
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(2)
(1)
9014 x
LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring for overvoltage protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
epitaxial planar chip,
• Silicon
(2) CLASSIFICATION OF h
FE metal
RANK silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related 65
to
+175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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