A1015(SOT 23)

WILLAS
FM120-M
A1015 THRU
FM1200-M
SOT-23
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
process
design, excellent power dissipation offers
TRANSISTOR• Batch
(PNP
)
better reverse leakage current and thermal resistance.
SOD-123H
SOT-23
profile surface mounted application in order to
FEATURES • Low
optimize board space.
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• Highand
High voltage
high current
• High surge capability.
Excellent• Guardring
hFE Linearity
for overvoltage protection.
• Ultra high-speed switching.
Low niose
• Silicon epitaxial planar chip, metal silicon junction.
Pb-Free •package
is available
Lead-free parts
meet environmental standards of
z
z
z
z
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. EMITTER
MIL-STD-19500
/228code suffix ”G”
RoHS product
for packing
3. COLLECTOR
• RoHS product for packing code suffix "G"
Halogen free
product
for packing
suffix
Halogen
free product
for packingcode
code suffix
"H" “H”
Moisture Mechanical
Sensitivity Level
1
data
z
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
MARKING: BA
• Case : Molded plastic, SOD-123H
,
• Terminals(T:Plated
terminals,
pernoted)
MIL-STD-750
unless solderable
otherwise
MAXIMUM RATINGS
a=25℃
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Symbol
VCBO
VCEO
Parameter
• Polarity : Indicated by cathode band
Position : Any
• Mounting
Collector-Base
Voltage
• Weight : Approximated 0.011 gram
VEBO
TJ
V
Collector-Emitter Voltage
-50
V
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS
Emitter-Base
Voltage
-5
V
150
mA
200
mW
125
℃ FM1150-MH FM1200FM180-MH FM1100-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Junction
Temperature
RATINGS
Marking Code
Tstg
-50
Ratings at 25℃Collector
ambient temperature
unless otherwise specified.
Current -Continuous
Single phase half wave, 60Hz, resistive of inductive load.
Collector
For capacitive load,
deratePower
currentDissipation
by 20%
IC
PC
Value in inches and (millimeters)
Unit
Dimensions
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
VDC
20
13
30
14
40
14
21 specified)
28
ELECTRICAL
CHARACTERISTICS
(Ta=25℃ unless
otherwise
Maximum RMS
Voltage
VRMS
Maximum DC Blocking Voltage
Symbol
IO
Parameter
Maximum
Average Forward Rectified Current
30
40
Test conditions
15
50
16
-55-125
Min
V(BR)CEO
IC=
= -0.1mA, IB 0
-50
Emitter-base
breakdown
voltage
Typical Junction
Capacitance
(Note 1)
V(BR)EBO
CJ
IE= =
-100 u A, IC 0
-5
-55 to +125
Operating
Temperature
Collector
cut-off
currentRange
ICBOTJ
=
VCB= -50V ,IE 0
Collector
cut-off current
ICEO
V=
CE= -50V , IB 0
Storage Temperature Range
TSTG
CHARACTERISTICS
Emitter cut-off current
SYMBOL
=
VEB= - 5V, IC 0
IEBO
DC current
gain
Maximum
Average Reverse Current at @T A=25℃
hFE
Rated DC Blocking Voltage
VF
@T A=125℃
NOTES:
Base-emitter
saturation voltage
105
140
100
150
1.0Typ
200
Max
V
V
-55 to +150
- 65 to +175
V
30
40
120
Unit
-0.1
uA
-0.1
uA
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
Collector-emitter
saturation voltage
70
80
42
60
superimposed onbreakdown
rated load (JEDEC
method)
Collector-emitter
voltage
56
35
-50
RΘJA
120
200
50
IC= =
-100u A,IE 0
Typical Thermal Resistance (Note 2)
115
150
18
80
V(BR)CBO
Collector-base
voltage
Peak Forwardbreakdown
Surge Current 8.3
ms single half sine-wave
IFSM
10℃
100
60
IR
0.50
VCE= -6V,IC= -2mA
VCE(sat)
IC=-100 mA, IB= -10mA
VBE(sat)
IC=-100 mA, IB= -10mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
fT
Transition
frequency
VCE= -10V,IC= -1mA
f=30MHz
-0.1
0.70
130
0.85
0.5
10
80
uA
0.9
400
0.92
-0.3
V
-1.1
V
MHz
CLASSIFICATION OF hFE
Rank
Range
2012-0
2012-06
L
H
130-200
200-400
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
A1015 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
13
30
14
40
15
50
16
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
VRRM
12
20
CHARACTERISTICS
80
100
80
100
.003(0.08)
56
70
115
150
120
200
105
140
150
200
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
TSTG
.004(0.10)MAX.
.008(0.20)
18
10
1.0
30
@T A=125℃
IR
NOTES:
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
0.70
0.85
0.9
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.92
10
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC
COR
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
A1015 THRU
FM1200-M
SOT-23
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing capability, low forward voltage drop.
• High current
(3)
(1)
(2)
surge capability.
• High
A1015 x
‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape & Reel Packing high-speed switching.
• Ultra
Silicon epitaxial planar chip, metal silicon junction.
•(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
(3)
CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single
phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking
Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
V
RRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum
Average Forward Rectified Current
IO
1.0
Peak use of any product or circuit. Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum
Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage
NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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