WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch (PNP ) better reverse leakage current and thermal resistance. SOD-123H SOT-23 profile surface mounted application in order to FEATURES • Low optimize board space. • Low power loss, high efficiency. current capability, low forward voltage drop. • Highand High voltage high current • High surge capability. Excellent• Guardring hFE Linearity for overvoltage protection. • Ultra high-speed switching. Low niose • Silicon epitaxial planar chip, metal silicon junction. Pb-Free •package is available Lead-free parts meet environmental standards of z z z z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. BASE 2. EMITTER MIL-STD-19500 /228code suffix ”G” RoHS product for packing 3. COLLECTOR • RoHS product for packing code suffix "G" Halogen free product for packing suffix Halogen free product for packingcode code suffix "H" “H” Moisture Mechanical Sensitivity Level 1 data z 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant MARKING: BA • Case : Molded plastic, SOD-123H , • Terminals(T:Plated terminals, pernoted) MIL-STD-750 unless solderable otherwise MAXIMUM RATINGS a=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Symbol VCBO VCEO Parameter • Polarity : Indicated by cathode band Position : Any • Mounting Collector-Base Voltage • Weight : Approximated 0.011 gram VEBO TJ V Collector-Emitter Voltage -50 V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Emitter-Base Voltage -5 V 150 mA 200 mW 125 ℃ FM1150-MH FM1200FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Junction Temperature RATINGS Marking Code Tstg -50 Ratings at 25℃Collector ambient temperature unless otherwise specified. Current -Continuous Single phase half wave, 60Hz, resistive of inductive load. Collector For capacitive load, deratePower currentDissipation by 20% IC PC Value in inches and (millimeters) Unit Dimensions Storage Temperature Maximum Recurrent Peak Reverse Voltage VRRM 12 20 VDC 20 13 30 14 40 14 21 specified) 28 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise Maximum RMS Voltage VRMS Maximum DC Blocking Voltage Symbol IO Parameter Maximum Average Forward Rectified Current 30 40 Test conditions 15 50 16 -55-125 Min V(BR)CEO IC= = -0.1mA, IB 0 -50 Emitter-base breakdown voltage Typical Junction Capacitance (Note 1) V(BR)EBO CJ IE= = -100 u A, IC 0 -5 -55 to +125 Operating Temperature Collector cut-off currentRange ICBOTJ = VCB= -50V ,IE 0 Collector cut-off current ICEO V= CE= -50V , IB 0 Storage Temperature Range TSTG CHARACTERISTICS Emitter cut-off current SYMBOL = VEB= - 5V, IC 0 IEBO DC current gain Maximum Average Reverse Current at @T A=25℃ hFE Rated DC Blocking Voltage VF @T A=125℃ NOTES: Base-emitter saturation voltage 105 140 100 150 1.0Typ 200 Max V V -55 to +150 - 65 to +175 V 30 40 120 Unit -0.1 uA -0.1 uA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Forward Voltage at 1.0A DC Collector-emitter saturation voltage 70 80 42 60 superimposed onbreakdown rated load (JEDEC method) Collector-emitter voltage 56 35 -50 RΘJA 120 200 50 IC= = -100u A,IE 0 Typical Thermal Resistance (Note 2) 115 150 18 80 V(BR)CBO Collector-base voltage Peak Forwardbreakdown Surge Current 8.3 ms single half sine-wave IFSM 10℃ 100 60 IR 0.50 VCE= -6V,IC= -2mA VCE(sat) IC=-100 mA, IB= -10mA VBE(sat) IC=-100 mA, IB= -10mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient fT Transition frequency VCE= -10V,IC= -1mA f=30MHz -0.1 0.70 130 0.85 0.5 10 80 uA 0.9 400 0.92 -0.3 V -1.1 V MHz CLASSIFICATION OF hFE Rank Range 2012-0 2012-06 L H 130-200 200-400 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range VRRM 12 20 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC COR Rev.D WILLAS ELECTRONIC CORP. WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing capability, low forward voltage drop. • High current (3) (1) (2) surge capability. • High A1015 x ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. •(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V RRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 Peak use of any product or circuit. Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.