A733(SOT 23)

WILLAS
FM120-M
A733
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
THRU
FM1200-M
Pb Free Prod
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
power loss, high efficiency.
• Low
TRANSISTOR
(PNP)
• High current capability, low forward voltage drop.
• High surge capability.
FEATURE
• Guardring for overvoltage protection.
z
Collector-Base
Voltage switching.
• Ultra high-speed
Silicon
epitaxial
planar chip, metal silicon junction.
•
z
Pb-Free package is available
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228 code suffix ”G”
RoHS product
for packing
• RoHS product for packing code suffix "G"
Halogen Halogen
free product
for packing code suffix “H”
free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. EMITTER
3. COLLECTOR
Moisture
Sensitivity Level
1
Mechanical
data
z
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case : Molded
Symbol
Parameter
Value
Unit
,
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
VCBO
-60
V
Collector-Base Voltage
Method 2026
VCEO
-50
V
-5
V
-150
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Collector-Emitter Voltage
IC
• Polarity : Indicated by cathode band
Emitter-Base
Voltage : Any
• Mounting Position
Collector
Current
-Continuous
• Weight : Approximated
0.011 gram
PC
VEBO
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Tj
Tstg
Ratings at 25℃ ambient temperature unless otherwise specified.
Storage
Temperature
-55-150
Single
phase half
wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃ SYMBOL
unlessFM120-MH
otherwise
specified)
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
RATINGS
Marking Code
13
14
15
16
50 Min 60
Maximum RMS
Voltage
Collector-base
breakdown
voltage
-5uA,IE=21
0
V(BR)CBOVRMS IC= 14
28
Collector-emitter breakdown voltage
V(BR)CEO
35 -60 42
50
60
Emitter-base
breakdown voltage
V(BR)EBO Parameter
Maximum
Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol
VRRM
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on current
rated load (JEDEC method)
Collector
cut-off
Typical Thermal Resistance (Note 2)
ICBO
IO
IFSM
RΘJA
Emitter cut-off current
IEBO
DC current
Operatinggain
Temperature Range
hFE TJ
Typical Junction Capacitance (Note 1)
Storage Temperature Range
CJ
12
Test
20 conditions
30
40
20
30
IC= -1mA , IB= 0
40
IE= -50uA, IC= 0
10
56
70
80
100
1.0
30
-5
VCB
=
= -60 V , IE 0
115
120
200
V
105
140
V
150
200
V
40
120
VEB
=
= -5 V , IC 0
+125
VCE= -6=
V,-55
IC to-1mA
TSTG
-50
18
Typ 80 Max 100 Unit 150
120 - 65 to +175
-0.1
uA
-0.1
uA
-55 to +150
475
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltageCHARACTERISTICS
FM130-MH
FM160-MH
FM180-MH
FM1100-MH
SYMBOLVFM120-MH
= -1.0mAFM140-MH FM150-MH
-0.58
-0.62
-0.68
V FM1150-MH FM1200VBE(on)
CE=-6V,IC
Maximum Forward Voltage at 1.0A DC
Transition
frequency
f
Maximum Average Reverse Current at @T A=25℃ T
Rated DC
Blocking
Voltage
Collector
output
capacitance
VF
@T A=125℃
Cob
IR
NOTES:
Noise
figure at 1 MHZ and applied reverse voltage of 4.0NF
1- Measured
VDC.
IC= -100mA, IB= - 10mA
0.50
=
VCE=-6V,IC -10mA
VCB=-10V,IE=0,f=1MHZ
-0.18
0.70
50
-0.3
0.85
0.5
104.5
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
6
V
MHz
7
pF
20
dB
0.9
0.92
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
Rank
Range
2012-06
MARKING
2012-0
L
H
120-220
220-475
CS
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
A733
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Features
Static Characteristic
dissipation offers
• Batch process design, excellent powerCOMMON
Mechanical data
V
Method 2026
• Polarity : Indicated by cathode band
T =100℃
• Mounting Position : Any
℃
• Weight : Approximated 0.011T =25
gram
a
a
-30
0
-0.1
VBEsat
-10
-100 -150
-30
IC
(mA)
IC
——
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-0.8
0.031(0.8) Typ.
Ta=25℃
Dimensions in inches and (millimeters)
Ta=100℃
-0.4
IC
β=10
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Peak Forward
Surge Current 8.3 ms single half sine-wave
-3
superimposed on rated load (JEDEC method)T =25℃
a
RΘJA
CJ
Typical Junction Capacitance (Note 1)
-0.3
-0.2
-0.4
-0.8
BASE-EMMITER VOLTAGE VBE (V)
CHARACTERISTICS
300
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IC
(mA)
(MHz)
40
50
42
56
60
80
Cib
115
150
120
200
70
105
140
100
150
200
Ta=25℃
1.0
30
40
120
-55 to +150
- 65 to +175
1
-0.1
-1
-3
REVERSE VOLTAGE
V
-0.3
0.50
PC 0.70
—— Ta
IR
Ta=25℃
fT
COLLECTOR CURRENT
30
250
TRANSITION FREQUENCY
2012-06
-30
-10
35
VCE=-6V
2- Thermal Resistance From Junction to Ambient
-3
28
10
f=1MHz
100
IE=0/IC=0
-10
-20
(V)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
200
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
-1
(mA)
18
80
-1.0
NOTES:
100
21
3
VF
Maximum Forward Voltage at 1.0A
fT DC
—— IC
Rated DC Blocking Voltage
IC
16
60
Cob
TSTG
-0.6
15
50
-55 to +125
TJ
Operating Temperature Range
Storage-0.1Temperature Range
IO
IFSM
14
40
C
Maximum Average Forward Rectified Current
10
CAPACITANCE
IC
Ta=100℃
13
30
20
COLLECTOR POWER DISSIPATION
PC (mW)
(mA)
CE
-30
-1
-100 -150
-30
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Cob/ Cib ——
VCB/ VEB
—— VBE
Typical Thermal Resistance (Note 2)
-10
COLLECTOR CURRENT
VRRM
-10
-3
-1
-0.5
(mA)
(pF)
IC
COMMON EMITTER
-100
COLLECTOR CURRENT
-3
-1
-0.3
COLLECTOR CURRENT
-0.0
-0.2
Maximum Recurrent
Peak Reverse Voltage
V =-6V
2012-0
0.071(1.8)
0.056(1.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
COLLECTOR CURRENT
0.012(0.3) Typ.
100
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
Single -10
phase half wave, 60Hz, resistive of inductive load.
-0.3
-3
-30
-1
-10
-100 -150
For capacitive load, derate current by 20%
0.146(3.7)
0.130(3.3)
Ta=25℃
I
RATINGS
200
(V)
-100
Marking
Code
-150
Ta=100℃
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
——
VCE
C
COMMON EMITTER
VCE=-6V
-1.2
rated flameCretardant
• Epoxy : UL94-V0 CEsat
• Case : Molded plastic, SOD-123H
-300
,
• Terminals :Plated terminals, solderable per MIL-STD-750
-500
FE
SOD-123H
DC CURRENT GAIN
IC
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE
FM1200-M
Package
outline
h
—— I
300
hFE
(mA)
EMITTER
better reverse leakage current and thermal
resistance.
Ta=25℃
in order to
• Low profile surface mounted application
-20uA
-3
optimize board space.
-18uA
• Low power loss, high efficiency. -16uA
voltage drop.
• High current capability, low forward
-14uA
-2
-12uA
• High surge capability.
• Guardring for overvoltage protection.-10uA
-8uA
• Ultra high-speed switching.
-6uA
-1
junction.
• Silicon epitaxial planar chip, metal silicon
-4uA
of
• Lead-free parts meet environmental standards
MIL-STD-19500 /228
IB=-2uA
for packing code suffix "G"
•-0 -0RoHS product
-2
-4
-6
-8
-10
Halogen free product for packing code suffix "H"
THRU
Pb Free Prod
SOD-123+ PACKAGE
Typical Characterisitics
-4
FM120-M
0.9
0.85
0.5
0.92
10
200
150
100
50
0
-100
0
25
50
75
AMBIENT TEMPERATURE
100
125
150
WILLAS
ELECTRONIC CO
T (℃ )
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
A733 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOT-23
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
MIL-STD-19500 /228
.063(1.60)
.047(1.20)
"G"
• RoHS product for packing code suffix
.122(3.10)
Halogen free product for packing code suffix "H"
Mechanical data
0.012(0.3) Typ.
.106(2.70)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.080(2.04)
Marking Code
Maximum Recurrent Peak Reverse Voltage
.070(1.78)
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
18
10
.003(0.08)
80
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.083(2.10)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.110(2.80)
Method 2026
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
@T A=125℃
IR
.020(0.50)
NOTES:
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
0.50
.055(1.40)
.035(0.89)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.5
0.92
10
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.D
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
A733 THRU
FM1200-M
SOT-23 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(3) (1) (2)
‐T G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• HighA733 x
Guardring for overvoltage protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
• (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
(3)
CLASSIFICATION OF h
FE RANK MIL-STD-19500
/228
Ordering Information: • RoHS product for packing code suffix "G"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single
phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
which may be included on WILLAS data sheets and/ or specifications can 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating
Temperature Range
TJ
life‐saving implant or other applications intended for life‐sustaining or other related 65
to
+175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
or indirectly cause injury or threaten a life without expressed written approval 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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