BC84x(50)xLT1(SOT 23)

BC86A/BLT1
FM120-M+
BC87A/B/CLT1
THRU
BC88A/B/CLT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Product
WILLAS
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
NPN
Silicon
optimize
board space.
• Low profile surface mounted application in order to
•
•
loss, highLevel:
efficiency.
• Low power
Moisture
Sensitivity
1
High current capability, low forward voltage drop.
•
ESD Rating – Human Body Model: >4000 V
• High surge capability.
ESD
Ratingfor
– Machine
Model: >400 V
overvoltage protection.
• Guardring
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
declare
that the material of product compliance with RoHS requirements.
• We• Ultra
high-speed switching.
0.071(1.8)
0.056(1.4)
Pb-Free
is available
epitaxial planar chip, metal silicon junction.
• Siliconpackage
RoHS
productparts
for packing
code suffix ”G”
meet environmental
standards of
• Lead-free
MIL-STD-19500
/228
Halogen
free product
for packing code suffix “H”
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM
UL94-V0 rated flame retardant
• Epoxy : RATINGS
0.040(1.0)
0.024(0.6)
Rating
Value
plastic, SOD-123H Symbol
• Case : Molded
,
Collector–Emitter
Voltage
VCEO
• Terminals :Plated
terminals, solderable
per MIL-STD-750
65
45
30
BC846
Method 2026
BC847,BC850
Polarity : Indicated by cathode
BC848 band
•
• Mounting Position
Collector–Base
Voltage: Any
• Weight : ApproximatedBC846
0.011 gram
VCBO
80
50
30
BC847,BC850
BC848
SOT–23
Unit
0.031(0.8) Typ.
0.031(0.8) Typ.
Vdc
3
COLLECT OR
Dimensions in inches and (millimeters)
Vdc
1
B ASE
2
EMIT T ER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Emitter–Base
Voltage
VEBO specified.
Ratings
at 25℃ ambient
temperature unless otherwise
BC846
6.0
Single phase half wave, 60Hz, resistive of inductive load.
BC847,BC850
6.0
For capacitive load, derate currentBC848
by 20%
5.0
RATINGS
Collector Current
– Continuous
Vdc
FM130-MH
IC SYMBOL FM120-MH
100
mAdc FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
V
VRRM
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum
Average Forward
Rectified Current
THERMAL
CHARACTERISTICS
IO
Characteristic
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
superimposed
on ratedDissipation
load (JEDECFR–5
method)
Total Device
Board
PD
(Note 1.)
Typical Thermal
Resistance (Note 2)
RΘJA
TA = 25°C
Typical Junction
Capacitance (Note 1)
CJ
Derate above 25°C
Operating Temperature Range
TJ
Resistance,
RqJATSTG
StorageThermal
Temperature
Range
Junction to Ambient (Note 1.)
Total DeviceCHARACTERISTICS
Dissipation
A
Maximum Average
Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
@T A=125℃
Thermal Resistance,
NOTES: Junction to Ambient (Note 2.)
RqJA
1- Measured
at 1 MHZ
applied reverse voltage of 4.0
Junction
and and
Storage
T ,VDC.
T
Range
2- Thermal Temperature
Resistance From
Junction to Ambient
Unit
225
mW
1.8
556
40
120
mW/°C
-55 to +125
°C/W
A
A
℃
-55 to +150
- 65 to +175
PDSYMBOL FM120-MH
300
mW FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
FM130-MH
V
0.9
0.92
VF
0.50
0.70
0.85
Substrate
(NoteDC
2.)
Maximum Alumina
Forward Voltage
at 1.0A
T = 25°C
Derate above 25°C
Max
1.0
30
J
stg
2.4
mW/°C
417
°C/W
–55 to
+150
°C
0.5
10
m
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC86A/BLT1
FM120-M+
BC87A/B/CLT1
THRU
BC88A/B/CLT1
FM1200-M
1.0A SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Produc
WILLAS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Features
Package
outline
Symbol
Min
Typ
Characteristic
Max
Unit
V
• Batch process design, excellent power dissipation offers
OFF CHARACTERISTICS
better reverse leakage current and thermal resistance.
Collector–Emitter Breakdown Voltage BC846A,B
• Low profile surface mounted application in order to
(IC = 10 mA)
BC847A,B,C,BC850B,C
optimize board space.
BC848A,B,C
• Low power loss, high efficiency.
Collector–Emitter
Breakdown
Voltage
BC846A,B
capability,
low forward
voltage drop.
• High current
(IC =• 10
µA,surge
VEB =capability.
0)
BC847A,B,C,BC850B,C
High
BC848A,B,C
• Guardring for overvoltage protection.
Ultra
high-speed
switching.
•
Collector–Base Breakdown Voltage
BC846A,B
Silicon
silicon junction.
(IC =• 10
mA) epitaxial planar chip, metal
BC847A,B,C,BC850B,C
BC848A,B,C
standards of
• Lead-free parts meet environmental
MIL-STD-19500 /228
Emitter–Base Breakdown Voltage
BC846A,B
"G"
• RoHS product for packing code suffix
(IE = 1.0 mA)
BC847A,B,C,BC850B,C
Halogen free product for packingBC848A,B,C
code suffix "H"
V(BR)CEO
65
45
30
SOD-123H
–
–
–
0.146(3.7)
–
–
–
V(BR)CES
80
50
30
0.130(3.3)
–
–
–
–
–
–
V(BR)CBO
80
50
30
–
–
–
–
–
–
V(BR)EBO
6.0
6.0
5.0
–
–
–
–
–
–
ICBO
–
–
–
–
15
5.0
Mechanical data
Collector Cutoff Current (VCB = 30 V)
• Epoxy : UL94-V0 rated flame(Vretardant
CB = 30 V, TA = 150°C)
• Case : Molded plastic, SOD-123H
ON CHARACTERISTICS
• Terminals :Plated terminals, solderable
per MIL-STD-750
DC Current Gain
BC846A,BC847A,BC848A
hFE
110
200
180
290
220
450
420
520
800
VCE(sat)
–
–
–
–
0.25
0.6
V
VBE(sat)
–
–
0.7
0.9
–
–
V
V14
BE(on) 15 580 16
– 60
40
50
660 18
– 80
VRRM
12
20
13
30
Maximum RMS Voltage
SMALL–SIGNAL
CHARACTERISTICS
VRMS
14
21
28
35
42
56
Maximum
DC Blocking
VoltageProduct
Current–Gain
– Bandwidth
VDC
20
30
40 f
T
50 100 60
80
(IC = 10
mA, VCE
= 5.0Rectified
Vdc, f = Current
100 MHz)
Maximum
Average
Forward
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Peak Forward Surge Current 8.3 ms single half sine-wave
Noise Figureon(Irated
superimposed
loadmA,
(JEDEC method)
C = 0.2
IO
IFSM
Cobo
NF
(V
= 5.0 Vdc, R = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
CEThermal Resistance
S
Typical
(Note 2)
BC846A,B,BC847A,B,C,BC848A,B,C RΘJA
BC850B,C
Typical Junction Capacitance (Note 1)
CJ
DEVICE
-55 to +125
OperatingMARKING
Temperature AND
RangeORDERING INFORMATION
TJ
Device Range
Storage Temperature
BC846ALT1
Marking
CHARACTERISTICS
Maximum
Forward Voltage at 1.0A DC
BC846BLT1
TSTG
1A
BC847ALT1
Rated DC Blocking Voltage
1B
VF
1E
@T A=125℃
BC847BLT1
NOTES:
1F
BC847CLT1
1- Measured
at 1 MHZ and applied reverse voltage1G
of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
–
–
1.0
–
30
–
–
40 –
–
120
mV 115
150
120
200
105
140
MHz150
200
70
– 100
4.5
10
4.0
pF
dB
-55 to +150
Package
- 65 to +175
Shipping
SOT-23
3000/Tape&Reel
IR
SOT-230.50
3000/Tape&Reel
0.70
SOT-23
0.5
3000/Tape&Reel
10
3000/Tape&Reel
SOT-23
3000/Tape&Reel
SOT-23
BC848ALT1
1J
SOT-23
3000/Tape&Reel
BC848BLT1
1K
SOT-23
3000/Tape&Reel
BC848CLT1
1L
SOT-23
3000/Tape&Reel
BC850BLT1
2F
SOT-23
3000/Tape&Reel
BC850CLT1
2012-06
2G
SOT-23
3000/Tape&Reel
2012-
700 10
770100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
0.031(0.8) Typ.
Base–Emitter
Voltage
(IC
= 10 mA,
VCE = 5.0 V)
Maximum
Recurrent
Peak
Reverse
Voltage
nA
µA
0.040(1.0)
0.024(0.6)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Base–Emitter
Marking
Code Voltage (IC = 2.0 mA, VCE = 5.0 V)
V
–
90
–
–
–
150
–
–
–
Dimensions
in 270
inches and (millimeters)
CHARACTERISTICS
Collector–Emitter
Saturation
Voltage (Iunless
mA, IB = 0.5
mA)
Ratings
at 25℃ ambient
temperature
specified.
C = 10 otherwise
Collector–Emitter
Saturation
Voltage
(ICof= inductive
100 mA, Iload.
B = 5.0 mA)
Single
phase half wave,
60Hz,
resistive
For
capacitive Saturation
load, derate
current(IC
by=20%
Base–Emitter
Voltage
10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
RATINGS
V
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
,
(IC = 10 µA, VCE =Method
5.0 V) 2026
BC846B,BC847B,BC848B
• Polarity : Indicated by cathodeBC847C,BC848C
band
Mounting
Position
(IC =• 2.0
mA, VCE
= 5.0 V): Any
BC846A,BC847A,BC848A
BC846B,BC847B,BC848B,
• Weight : Approximated 0.011 gram
BC850B
BC847C,
MAXIMUM RATINGS
AND BC848C,BC850C
ELECTRICAL
V
0.012(0.3) Typ.
0.85
0.9
0.92
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
BC86A/BLT1
FM120-M+
BC87A/B/CLT1
THRU
BC88A/B/CLT1
FM1200-M
1.0A SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Produc
WILLAS
Package outline
Features
1.5
1.0
0.8
0.6
0.4
0.3
0.2
optimize board space.
VCE = 10 V
• Low power loss, high efficiency.
TA = 25°C
drop.
• High current capability, low forward voltage
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
TA = 25°C
0.9
0.8
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.7
0.5
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
• Epoxy : UL94-V0 rated flame retardant
50 100 200
0.2
1.0 2.0
20
5.0 10
plastic, SOD-123H
• Case0.5: Molded
IC, COLLECTOR CURRENT (UAdc)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
RATINGS
Figure 2. “Saturation” and “On” Voltages
-55°C to +125°C
1.2
Maximum
0.4 Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
0.02
1.6
2.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum
0 DC Blocking Voltage
0.1
1.0
IB, BASE CURRENT (UA)
VDC
IO
Maximum Average Forward Rectified Current
10
20
20
2.4
13
30
2.8
21
14
40
15
50
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
30
40
50
150
100
200
IFSM
Figure 3. Collector Saturation Region
Peak Forward Surge Current 8.3 ms single half sine-wave
TJ
TTSTG
A = 25°C
Operating Temperature Range
C, CAPACITANCE (pF)
7.0 Temperature Range
Storage
5.0
Cib
CHARACTERISTICS
Maximum
3.0 Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
CobA=125℃
@T
IR
2.0
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
2012-06
2012-
40
120
-55 to +150
- 65 to +175
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
60
80
100
10
1.0
1.0
IC, COLLECTOR
CURRENT (UA)
400 -55
to +125
300
CJ
10 Junction Capacitance (Note 1)
Typical
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
RΘJA
Typical Thermal Resistance (Note 2)
0.2
Figure 4. Base–Emitter 30
Temperature Coefficient
superimposed on rated load (JEDEC method)
50 70 100
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
0.031(0.8) Typ.
IC, COLLECTOR CURRENT (UAdc)
Dimensions in inches and (millimeters)
IC = 200 UA
Ratings at 25℃ ambient temperature unless otherwise specified.
1.2
Single phase half
load.
IC =wave,
IC =60Hz,
IC =resistive
50 UA of inductive
IC = 100 UA
For capacitive10
load,
UA derate
20 UA current by 20%
0.8
0.040(1.0)
0.024(0.6)
0
0.1
1.0
θVB, TEMPERATURE COEFFICIENT (UV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.071(1.8)
0.056(1.4)
0.4
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any
TA = 25°C
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
VBE(on) @ VCE = 10 V
0.6
Halogen free product for packing code suffix "H"
1.6
0.146(3.7)
0.130(3.3)
VBE(sat) @ IC/IB = 10
FigureMethod
1. Normalized
DC Current Gain
2026
2.0
SOD-123H
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
• Batch process design, excellent power dissipation offers
BC847,BC848,BC850
better reverse leakage current and thermal
resistance.
• Low profile surface mounted application in order to
20
40
100
80
0.50
0.70
0.5
10
60
0.85 V = 10 V 0.9
CE
TA = 25°C
0.92
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (UAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
BC86A/BLT1
FM120-M+
BC87A/B/CLT1
THRU
BC88A/B/CLT1
FM1200-M
1.0A SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Produc
WILLAS
Features
Package outline
BC846
• Batch process design, excellent power dissipation offers
SOD-123H
1.0
optimize board space.
TA = 25°C
= 5 V loss, high efficiency.
power
• LowVCE
TA current
= 25°C capability, low forward voltage drop.
• High
2.0 • High surge capability.
• Guardring for overvoltage protection.
1.0 • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
•
0.5 Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.2 Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.071(1.8)
0.056(1.4)
0.4
0.2
VCE(sat) @ IC/IB = 10
Mechanical data
0
rated flame
• Epoxy
10 retardant100
0.1
0.2 : UL94-V0
1.0
IC,plastic,
COLLECTOR
CURRENT (UA)
SOD-123H
• Case : Molded
• Terminals :Plated
solderable
Figureterminals,
7. DC Current
Gainper MIL-STD-750
0.5
0.2
2.0
1.0
20
10
5.0
50
I , COLLECTOR CURRENT (UA)
0.031(0.8)CTyp.
,
0.040(1.0)
0.024(0.6)
100
200
0.031(0.8) Typ.
Figure 8. “On” Voltage
TA = 25°C
1.6
RATINGS
-1.4
-1.8
θVB for VBE
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
0.4
V
DC
10
0.02 0.05 0.1 0.2
1.0 2.0
0.5
5.0
Maximum Average Forward Rectified
Current (UA)
IO
IB, BASE CURRENT
Peak Forward Surge
Current
ms single half
sine-wave Region
Figure
9. 8.3
Collector
Saturation
IFSM
20
20
13
-2.6
30
21
-3.0
30
superimposed on rated load (JEDEC method)
C, CAPACITANCE (pF)
Storage Temperature Range
TSTG
Cib
CHARACTERISTICS
VF
10
Maximum Average Reverse Current at @T A=25℃
6.0
NOTES:
@T A=125℃
IR
C
4.0
ob of 4.0 VDC.
1- Measured
at 1 MHZ and applied reverse voltage
2- Thermal Resistance From Junction to Ambient
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
2012-06
2012-
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
0.5
50
60
80
100
150
10 20
50
100 200
0.2
1.0 2.0
5.0
1.0
IC, COLLECTOR
CURRENT (UA)
Figure 10. Base–Emitter30
Temperature Coefficient
200
40
120
500
-55 to +150
VCE = 5 V
TA = 25°C
- 65 to +175
SYMBOL FM120-MH FM130-MH
200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
15
50
-55 to +125
TAT=J25°C
Operating Temperature Range
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT
CJ
Typical40Junction Capacitance (Note 1)
14
40
RΘJA
Typical Thermal Resistance (Note 2)
20
-55°C to 125°C
-2.2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0 DC Blocking Voltage
Maximum
Dimensions in inches and (millimeters)
-1.0
MAXIMUM
AND ELECTRICAL
CHARACTERISTICS
100 UA
200 UA
20 UA
50RATINGS
UA
Ratings
1.2 at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate
IC =current by 20%
0.8
10 UA
Marking Code
θVB, TEMPERATURE COEFFICIENT (UV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Method 2026
• Polarity : Indicated by cathode band
2.0
• Mounting Position : Any
• Weight : Approximated 0.011 gram
50
100
0.50
100
0.70
0.85
0.9
0.92
0.5
10
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (UA)
Figure 12. Current–Gain – Bandwidth Product
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
BC86A/BLT1
FM120-M+
BC87A/B/CLT1
THRU
BC88A/B/CLT1
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Product
WILLAS
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
junction.
• Silicon epitaxial planar chip, metal silicon
of
• Lead-free parts meet environmental standards
.106(2.70)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
.080(2.04)
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.083(2.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.110(2.80)
Mechanical data
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
.020(0.50)
IO
.012(0.30)
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum Average Forward Rectified Current
IFSM
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
14
40
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
15
50
16
60
18
80
35
42
50
60
TJ
Operating Temperature Range
Storage Temperature Range
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
40
120
Dimensions
CJin inches and (millimeters)
Typical Junction Capacitance (Note 1)
10
100
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC86A/BLT1
FM120-M+
BC87A/B/CLT1
WILLAS
THRU
BC88A/B/CLT1
FM1200-M
1.0A SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Transistors
%&%&/7
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability, (1)
‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• HighPart Number G
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
life‐saving implant or other applications intended for life‐sustaining or other related Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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