BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Product WILLAS Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon optimize board space. • Low profile surface mounted application in order to • • loss, highLevel: efficiency. • Low power Moisture Sensitivity 1 High current capability, low forward voltage drop. • ESD Rating – Human Body Model: >4000 V • High surge capability. ESD Ratingfor – Machine Model: >400 V overvoltage protection. • Guardring 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. declare that the material of product compliance with RoHS requirements. • We• Ultra high-speed switching. 0.071(1.8) 0.056(1.4) Pb-Free is available epitaxial planar chip, metal silicon junction. • Siliconpackage RoHS productparts for packing code suffix ”G” meet environmental standards of • Lead-free MIL-STD-19500 /228 Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data MAXIMUM UL94-V0 rated flame retardant • Epoxy : RATINGS 0.040(1.0) 0.024(0.6) Rating Value plastic, SOD-123H Symbol • Case : Molded , Collector–Emitter Voltage VCEO • Terminals :Plated terminals, solderable per MIL-STD-750 65 45 30 BC846 Method 2026 BC847,BC850 Polarity : Indicated by cathode BC848 band • • Mounting Position Collector–Base Voltage: Any • Weight : ApproximatedBC846 0.011 gram VCBO 80 50 30 BC847,BC850 BC848 SOT–23 Unit 0.031(0.8) Typ. 0.031(0.8) Typ. Vdc 3 COLLECT OR Dimensions in inches and (millimeters) Vdc 1 B ASE 2 EMIT T ER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Emitter–Base Voltage VEBO specified. Ratings at 25℃ ambient temperature unless otherwise BC846 6.0 Single phase half wave, 60Hz, resistive of inductive load. BC847,BC850 6.0 For capacitive load, derate currentBC848 by 20% 5.0 RATINGS Collector Current – Continuous Vdc FM130-MH IC SYMBOL FM120-MH 100 mAdc FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 V VRRM Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current THERMAL CHARACTERISTICS IO Characteristic Symbol Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on ratedDissipation load (JEDECFR–5 method) Total Device Board PD (Note 1.) Typical Thermal Resistance (Note 2) RΘJA TA = 25°C Typical Junction Capacitance (Note 1) CJ Derate above 25°C Operating Temperature Range TJ Resistance, RqJATSTG StorageThermal Temperature Range Junction to Ambient (Note 1.) Total DeviceCHARACTERISTICS Dissipation A Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR @T A=125℃ Thermal Resistance, NOTES: Junction to Ambient (Note 2.) RqJA 1- Measured at 1 MHZ applied reverse voltage of 4.0 Junction and and Storage T ,VDC. T Range 2- Thermal Temperature Resistance From Junction to Ambient Unit 225 mW 1.8 556 40 120 mW/°C -55 to +125 °C/W A A ℃ -55 to +150 - 65 to +175 PDSYMBOL FM120-MH 300 mW FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U FM130-MH V 0.9 0.92 VF 0.50 0.70 0.85 Substrate (NoteDC 2.) Maximum Alumina Forward Voltage at 1.0A T = 25°C Derate above 25°C Max 1.0 30 J stg 2.4 mW/°C 417 °C/W –55 to +150 °C 0.5 10 m 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Produc WILLAS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Features Package outline Symbol Min Typ Characteristic Max Unit V • Batch process design, excellent power dissipation offers OFF CHARACTERISTICS better reverse leakage current and thermal resistance. Collector–Emitter Breakdown Voltage BC846A,B • Low profile surface mounted application in order to (IC = 10 mA) BC847A,B,C,BC850B,C optimize board space. BC848A,B,C • Low power loss, high efficiency. Collector–Emitter Breakdown Voltage BC846A,B capability, low forward voltage drop. • High current (IC =• 10 µA,surge VEB =capability. 0) BC847A,B,C,BC850B,C High BC848A,B,C • Guardring for overvoltage protection. Ultra high-speed switching. • Collector–Base Breakdown Voltage BC846A,B Silicon silicon junction. (IC =• 10 mA) epitaxial planar chip, metal BC847A,B,C,BC850B,C BC848A,B,C standards of • Lead-free parts meet environmental MIL-STD-19500 /228 Emitter–Base Breakdown Voltage BC846A,B "G" • RoHS product for packing code suffix (IE = 1.0 mA) BC847A,B,C,BC850B,C Halogen free product for packingBC848A,B,C code suffix "H" V(BR)CEO 65 45 30 SOD-123H – – – 0.146(3.7) – – – V(BR)CES 80 50 30 0.130(3.3) – – – – – – V(BR)CBO 80 50 30 – – – – – – V(BR)EBO 6.0 6.0 5.0 – – – – – – ICBO – – – – 15 5.0 Mechanical data Collector Cutoff Current (VCB = 30 V) • Epoxy : UL94-V0 rated flame(Vretardant CB = 30 V, TA = 150°C) • Case : Molded plastic, SOD-123H ON CHARACTERISTICS • Terminals :Plated terminals, solderable per MIL-STD-750 DC Current Gain BC846A,BC847A,BC848A hFE 110 200 180 290 220 450 420 520 800 VCE(sat) – – – – 0.25 0.6 V VBE(sat) – – 0.7 0.9 – – V V14 BE(on) 15 580 16 – 60 40 50 660 18 – 80 VRRM 12 20 13 30 Maximum RMS Voltage SMALL–SIGNAL CHARACTERISTICS VRMS 14 21 28 35 42 56 Maximum DC Blocking VoltageProduct Current–Gain – Bandwidth VDC 20 30 40 f T 50 100 60 80 (IC = 10 mA, VCE = 5.0Rectified Vdc, f = Current 100 MHz) Maximum Average Forward Output Capacitance (VCB = 10 V, f = 1.0 MHz) Peak Forward Surge Current 8.3 ms single half sine-wave Noise Figureon(Irated superimposed loadmA, (JEDEC method) C = 0.2 IO IFSM Cobo NF (V = 5.0 Vdc, R = 2.0 kΩ f = 1.0 kHz, BW = 200 Hz) CEThermal Resistance S Typical (Note 2) BC846A,B,BC847A,B,C,BC848A,B,C RΘJA BC850B,C Typical Junction Capacitance (Note 1) CJ DEVICE -55 to +125 OperatingMARKING Temperature AND RangeORDERING INFORMATION TJ Device Range Storage Temperature BC846ALT1 Marking CHARACTERISTICS Maximum Forward Voltage at 1.0A DC BC846BLT1 TSTG 1A BC847ALT1 Rated DC Blocking Voltage 1B VF 1E @T A=125℃ BC847BLT1 NOTES: 1F BC847CLT1 1- Measured at 1 MHZ and applied reverse voltage1G of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient – – 1.0 – 30 – – 40 – – 120 mV 115 150 120 200 105 140 MHz150 200 70 – 100 4.5 10 4.0 pF dB -55 to +150 Package - 65 to +175 Shipping SOT-23 3000/Tape&Reel IR SOT-230.50 3000/Tape&Reel 0.70 SOT-23 0.5 3000/Tape&Reel 10 3000/Tape&Reel SOT-23 3000/Tape&Reel SOT-23 BC848ALT1 1J SOT-23 3000/Tape&Reel BC848BLT1 1K SOT-23 3000/Tape&Reel BC848CLT1 1L SOT-23 3000/Tape&Reel BC850BLT1 2F SOT-23 3000/Tape&Reel BC850CLT1 2012-06 2G SOT-23 3000/Tape&Reel 2012- 700 10 770100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ 0.031(0.8) Typ. Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) Maximum Recurrent Peak Reverse Voltage nA µA 0.040(1.0) 0.024(0.6) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Base–Emitter Marking Code Voltage (IC = 2.0 mA, VCE = 5.0 V) V – 90 – – – 150 – – – Dimensions in 270 inches and (millimeters) CHARACTERISTICS Collector–Emitter Saturation Voltage (Iunless mA, IB = 0.5 mA) Ratings at 25℃ ambient temperature specified. C = 10 otherwise Collector–Emitter Saturation Voltage (ICof= inductive 100 mA, Iload. B = 5.0 mA) Single phase half wave, 60Hz, resistive For capacitive Saturation load, derate current(IC by=20% Base–Emitter Voltage 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) RATINGS V 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. , (IC = 10 µA, VCE =Method 5.0 V) 2026 BC846B,BC847B,BC848B • Polarity : Indicated by cathodeBC847C,BC848C band Mounting Position (IC =• 2.0 mA, VCE = 5.0 V): Any BC846A,BC847A,BC848A BC846B,BC847B,BC848B, • Weight : Approximated 0.011 gram BC850B BC847C, MAXIMUM RATINGS AND BC848C,BC850C ELECTRICAL V 0.012(0.3) Typ. 0.85 0.9 0.92 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Produc WILLAS Package outline Features 1.5 1.0 0.8 0.6 0.4 0.3 0.2 optimize board space. VCE = 10 V • Low power loss, high efficiency. TA = 25°C drop. • High current capability, low forward voltage • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of TA = 25°C 0.9 0.8 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.7 0.5 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 • Epoxy : UL94-V0 rated flame retardant 50 100 200 0.2 1.0 2.0 20 5.0 10 plastic, SOD-123H • Case0.5: Molded IC, COLLECTOR CURRENT (UAdc) , • Terminals :Plated terminals, solderable per MIL-STD-750 RATINGS Figure 2. “Saturation” and “On” Voltages -55°C to +125°C 1.2 Maximum 0.4 Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 0.02 1.6 2.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum 0 DC Blocking Voltage 0.1 1.0 IB, BASE CURRENT (UA) VDC IO Maximum Average Forward Rectified Current 10 20 20 2.4 13 30 2.8 21 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 30 40 50 150 100 200 IFSM Figure 3. Collector Saturation Region Peak Forward Surge Current 8.3 ms single half sine-wave TJ TTSTG A = 25°C Operating Temperature Range C, CAPACITANCE (pF) 7.0 Temperature Range Storage 5.0 Cib CHARACTERISTICS Maximum 3.0 Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage CobA=125℃ @T IR 2.0 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 2012-06 2012- 40 120 -55 to +150 - 65 to +175 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 60 80 100 10 1.0 1.0 IC, COLLECTOR CURRENT (UA) 400 -55 to +125 300 CJ 10 Junction Capacitance (Note 1) Typical fă, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) RΘJA Typical Thermal Resistance (Note 2) 0.2 Figure 4. Base–Emitter 30 Temperature Coefficient superimposed on rated load (JEDEC method) 50 70 100 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.031(0.8) Typ. IC, COLLECTOR CURRENT (UAdc) Dimensions in inches and (millimeters) IC = 200 UA Ratings at 25℃ ambient temperature unless otherwise specified. 1.2 Single phase half load. IC =wave, IC =60Hz, IC =resistive 50 UA of inductive IC = 100 UA For capacitive10 load, UA derate 20 UA current by 20% 0.8 0.040(1.0) 0.024(0.6) 0 0.1 1.0 θVB, TEMPERATURE COEFFICIENT (UV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 0.071(1.8) 0.056(1.4) 0.4 Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any TA = 25°C • Weight : Approximated 0.011 gram 0.012(0.3) Typ. VBE(on) @ VCE = 10 V 0.6 Halogen free product for packing code suffix "H" 1.6 0.146(3.7) 0.130(3.3) VBE(sat) @ IC/IB = 10 FigureMethod 1. Normalized DC Current Gain 2026 2.0 SOD-123H 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 • Batch process design, excellent power dissipation offers BC847,BC848,BC850 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to 20 40 100 80 0.50 0.70 0.5 10 60 0.85 V = 10 V 0.9 CE TA = 25°C 0.92 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (UAdc) 30 50 Figure 6. Current–Gain – Bandwidth Product WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Produc WILLAS Features Package outline BC846 • Batch process design, excellent power dissipation offers SOD-123H 1.0 optimize board space. TA = 25°C = 5 V loss, high efficiency. power • LowVCE TA current = 25°C capability, low forward voltage drop. • High 2.0 • High surge capability. • Guardring for overvoltage protection. 1.0 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • 0.5 Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.2 Halogen free product for packing code suffix "H" 0.012(0.3) Typ. VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.071(1.8) 0.056(1.4) 0.4 0.2 VCE(sat) @ IC/IB = 10 Mechanical data 0 rated flame • Epoxy 10 retardant100 0.1 0.2 : UL94-V0 1.0 IC,plastic, COLLECTOR CURRENT (UA) SOD-123H • Case : Molded • Terminals :Plated solderable Figureterminals, 7. DC Current Gainper MIL-STD-750 0.5 0.2 2.0 1.0 20 10 5.0 50 I , COLLECTOR CURRENT (UA) 0.031(0.8)CTyp. , 0.040(1.0) 0.024(0.6) 100 200 0.031(0.8) Typ. Figure 8. “On” Voltage TA = 25°C 1.6 RATINGS -1.4 -1.8 θVB for VBE Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 0.4 V DC 10 0.02 0.05 0.1 0.2 1.0 2.0 0.5 5.0 Maximum Average Forward Rectified Current (UA) IO IB, BASE CURRENT Peak Forward Surge Current ms single half sine-wave Region Figure 9. 8.3 Collector Saturation IFSM 20 20 13 -2.6 30 21 -3.0 30 superimposed on rated load (JEDEC method) C, CAPACITANCE (pF) Storage Temperature Range TSTG Cib CHARACTERISTICS VF 10 Maximum Average Reverse Current at @T A=25℃ 6.0 NOTES: @T A=125℃ IR C 4.0 ob of 4.0 VDC. 1- Measured at 1 MHZ and applied reverse voltage 2- Thermal Resistance From Junction to Ambient 2.0 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 2012-06 2012- 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 0.5 50 60 80 100 150 10 20 50 100 200 0.2 1.0 2.0 5.0 1.0 IC, COLLECTOR CURRENT (UA) Figure 10. Base–Emitter30 Temperature Coefficient 200 40 120 500 -55 to +150 VCE = 5 V TA = 25°C - 65 to +175 SYMBOL FM120-MH FM130-MH 200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 -55 to +125 TAT=J25°C Operating Temperature Range fă, T CURRENT-GAIN - BANDWIDTH PRODUCT CJ Typical40Junction Capacitance (Note 1) 14 40 RΘJA Typical Thermal Resistance (Note 2) 20 -55°C to 125°C -2.2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0 DC Blocking Voltage Maximum Dimensions in inches and (millimeters) -1.0 MAXIMUM AND ELECTRICAL CHARACTERISTICS 100 UA 200 UA 20 UA 50RATINGS UA Ratings 1.2 at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate IC =current by 20% 0.8 10 UA Marking Code θVB, TEMPERATURE COEFFICIENT (UV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Method 2026 • Polarity : Indicated by cathode band 2.0 • Mounting Position : Any • Weight : Approximated 0.011 gram 50 100 0.50 100 0.70 0.85 0.9 0.92 0.5 10 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (UA) Figure 12. Current–Gain – Bandwidth Product WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Product WILLAS Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .122(3.10) junction. • Silicon epitaxial planar chip, metal silicon of • Lead-free parts meet environmental standards .106(2.70) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .083(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .004(0.10)MAX. Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 .020(0.50) IO .012(0.30) Peak Forward Surge Current 8.3 ms single half sine-wave Maximum Average Forward Rectified Current IFSM superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 15 50 16 60 18 80 35 42 50 60 TJ Operating Temperature Range Storage Temperature Range 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 40 120 Dimensions CJin inches and (millimeters) Typical Junction Capacitance (Note 1) 10 100 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC86A/BLT1 FM120-M+ BC87A/B/CLT1 WILLAS THRU BC88A/B/CLT1 FM1200-M 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • HighPart Number G Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.