BC85xxLT1(SOT 23)

BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
BC858A/B/CLT1
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
PNP Silicon
•
•
•
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
capability.
• High surge
Moisture
Sensitivity
Level: 1
Guardring for overvoltage protection.
•
ESD Rating – Human Body Model: >4000 V
• Ultra high-speed switching.
ESD Rating – Machine Model: >400 V
• Silicon epitaxial planar chip, metal silicon junction.
We• Lead-free
declare that
the
material
of product
compliance
with
parts
meet
environmental
standards
of
MIL-STD-19500
/228
RoHS
requirements.
for packing code suffix "G"
• RoHS product
Pb-Free
package
is available
Halogen free product for packing code suffix "H"
RoHS
product for packing
Mechanical
data code suffix ”G”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
1
2
Halogen
product for packing code suffix “H”
: UL94-V0 rated flame retardant
• Epoxyfree
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
SOT–23
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
• Mounting Position : Any
Rating
Symbol
Value
• Weight : Approximated 0.011 gram
Collector-Emitter Voltage
BC856
VCEO
–65
BC857
–45
MAXIMUM RATINGS AND ELECTRICAL
BC858
–30
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector-Base
Voltage
BC856
VCBO
–80
Single
phase half wave,
60Hz, resistive
of inductive
load.
BC857
–50
For capacitive load, derate current by 20%
BC858
–30
RATINGS
3
COLLECT OR
Dimensions in inches and (millimeters)
1
B ASE
Unit
V
2
EMIT T ER
CHARACTERISTICS
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Emitter–Base Voltage
VEBO
IC
VRRM
–5.0
12
–100
20
V
13
mAdc
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Marking Code
Collector Current – Continuous
Maximum Recurrent Peak Reverse Voltage
THERMAL
CHARACTERISTICS
Maximum
Average
Forward Rectified Current
Characteristic
IO
Symbol
IFSM
PD
RΘJA
Peak Forward Surge Current 8.3 ms single half sine-wave
Total Device
Dissipation
FR–5
Board,
superimposed
on rated
load (JEDEC
method)
1.) Resistance
TA = 25°C (Note 2)
Typical(Note
Thermal
Derate above 25°C
CJ
RqJATJ
Typical Junction Capacitance (Note 1)
Thermal
Resistance,
Operating
Temperature
Range
Junction to Ambient
Storage Temperature Range
0.040(1.0)
0.024(0.6)
mW mW/°C
556
°C/W
-55
to +125
40
120
-55 to +150
- 65 to +175
mW
FM120-MH FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL 300
VF
@T A=125℃
Junction and Storage Temperature
NOTES:
225
1.8
PD
Thermal
Resistance,
Maximum
Average
Reverse Current at @T A=25℃ RqJA
Unit
TSTG
Total Device Dissipation Alumina
Substrate, (Note
2.) TA = 25°C
CHARACTERISTICS
Derate
above
25°Cat 1.0A DC
Maximum
Forward
Voltage
Junction
to Ambient
Rated DC
Blocking
Voltage
Max
1.0
30
IR
TJ, Tstg
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2.4
417
mW/°C 0.50
°C/W
0.70
0.85
0.9
0.92
0.5
10
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2- Thermal
Resistance
2. Alumina
= 0.4 From
x 0.3 Junction
x 0.024 to
in.Ambient
99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
General
Purpose
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKYTransistors
BARRIER RECTIFIERS -20V- 200V
BC858A/B/CLT1
SOD-123+ PACKAGE
WILLAS
Pb Free Product
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Features
Package outline
excellent power dissipation offers
• Batch process design,Characteristic
better reverse leakage current and thermal resistance.
OFF CHARACTERISTICS
• Low profile surface mounted application in order to
Collector–Emitter
Breakdown
BC856 Series
optimize board
space.Voltage
(IC• =Low
–10power
mA) loss, high efficiency.
BC857 Series
BC858,Series
drop.
• High current capability, low forward voltage
capability.Voltage
• High surgeBreakdown
Collector–Emitter
BC856 Series
(IC• =Guardring
–10 µA, VEB
0)
for =overvoltage
protection. BC857 Series
BC858,Series
• Ultra high-speed switching.
Silicon
epitaxial
planar
chip,
metal
silicon
junction.
•
Collector–Base Breakdown Voltage
BC856
Series
of
(IC• =Lead-free
–10 mA) parts meet environmental standards
BC857 Series
MIL-STD-19500 /228
BC858,Series
• RoHS product for packing code suffix "G"
Emitter–Base
Voltage
BC856
HalogenBreakdown
free product
for packing code suffix
"H" Series
(IE = –1.0 mA)
BC857 Series
Mechanical data
BC858,Series
Epoxy : UL94-V0 rated flame retardant
•
Collector Cutoff Current (VCB = –30 V)
: Molded
• Case
Collector
Cutoff
Currentplastic,
(VCB =SOD-123H
–30 V, TA = 150°C)
RATINGS
Max
Unit
–
–
–
–
–
–
V
–80
–50
–30
–
–
–
–
–
–
V(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
V(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
ICBO
–
–
–
–
–15
–4.0
SOD-123H
V(BR)CEO
–65
–45
–30
0.031(0.8) Typ.
,
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
V
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
nA
µA
0.031(0.8) Typ.
hFE
–
Dimensions
in inches
125
180 and (millimeters)
250
VCE(sat)
CHARACTERISTICS
VBE(sat)
VBE(on)
14
15
40
50
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
Maximum
Current
(IC =Average
–10 mA,Forward
VCE = Rectified
–5.0 Vdc,
f = 100 MHz)
Output
Capacitance
Peak
Forward
Surge Current 8.3 ms single half sine-wave
(VCB = –10 V, f = 1.0 MHz)
superimposed
on rated load (JEDEC method)
IO
IFSM
RΘJA
(I
=
–0.2
mA,
V
=
–5.0
Vdc,
R
=
2.0
kΩ,
f
=
1.0
kHz,
BW
=
200
Hz)
C
CE
S
Typical Junction Capacitance (Note 1)
CJ
BC856,BC857,BC858 Series -55 to +125
Operating Temperature Range
TJ
Storage Temperature Range
fT
Cob
Noise
FigureResistance (Note 2)
Typical
Thermal
Typ
220
420
290
520
475
800
–
–
–
–
–0.3
–0.65
–
–
–0.7
–0.9
–
–
V
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Base–Emitter On Voltage
Marking
(ICCode
= –2.0 mA, VCE = –5.0 V)
Maximum
(IC =Recurrent
–10 mA, Peak
VCE Reverse
= –5.0 V)Voltage
Min
V(BR)CES
• Terminals :Plated terminals, solderable per MIL-STD-750
ON CHARACTERISTICS
DC Current Gain Method 2026
: Indicated
byV)cathode
band
(IC• =Polarity
–2.0 mA,
VCE = –5.0
BC856A,BC857A,BC858A
• Mounting Position : Any BC856B,BC857B,BC858B
BC857C,BC858C
• Weight : Approximated 0.011 gram
Collector–Emitter Saturation Voltage
(IC = –10 mA,
IB = –0.5 mA)
MAXIMUM
RATINGS AND ELECTRICAL
(IC = –100 mA, IB = –5.0 mA)
Ratings at 25℃ ambient temperature unless otherwise specified.
Base–Emitter
Voltage
Single
phase halfSaturation
wave, 60Hz,
resistive of inductive load.
(IC = –10 mA, IB = –0.5 mA)
For capacitive load, derate current by 20%
(IC = –100 mA, IB = –5.0 mA)
Symbol
TSTG
–0.616
– 60
– 18
– 80
35
42
56
70
50
60
80
100
–
100
–
NF
– 1.0
30
40
120
–
10
–0.75
100
–0.82
–
4.5
–
V
115
150
120
200
105
140
150
MHz
200
pF
dB
10
-55 to +150
- 65 to +175
DEVICE MARKING AND ORDERING INFORMATION
DeviceCHARACTERISTICS
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking SYMBOL FM120-MH FM130-MH
Package
Shipping
0.9
0.92
VF
0.50
0.70
0.85
BC856ALT1
3A
SOT-23
3000/Tape&Reel
0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DCBC856BLT1
Blocking Voltage
3B
SOT-23
3000/Tape&Reel
Maximum Forward Voltage at 1.0A DC
NOTES: BC857ALT1
3E
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
3000/Tape&Reel
BC857BLT1
3F
SOT-23
3000/Tape&Reel
BC857CLT1
3G
SOT-23
3000/Tape&Reel
BC858ALT1
3J
SOT-23
3000/Tape&Reel
BC858BLT1
3K
SOT-23
3000/Tape&Reel
BC858CLT1
3L
SOT-23
3000/Tape&Reel
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
SOT-23
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
BC857A/B/CLT1THRU
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- BC858A/B/CLT1
200V
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
BC857/ BC858
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
0.5
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
–1.0
T A = 25°C
–0.9
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
optimize board space.
•2.0Low power loss, high efficiency.
capability, low forward voltage drop.
•1.5High Vcurrent
= –10 V
CE
capability.
• High Tsurge
= 25°C
A
•1.0Guardring for overvoltage protection.
• Ultra high-speed switching.
•0.7Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
SOD-123H
–0.8
–0.7
–0.5
–0.4
–0.3
V CE(sat) @ I C /I B = 10
–0.1
•0.2Epoxy : UL94-V0 rated flame retardant
–0.2
–1.0 plastic,
–2.0
–5.0
–10
–20
–50
–100
–200
:–0.5
Molded
SOD-123H
• Case
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
I , COLLECTOR CURRENT (mAdc)
–0.1
–0.2
I C= –200 mA
I C= –20 mA
–0.4
VRRM
20
Maximum RMS Voltage
VRMS
14
0
–0.02
–0.1
VDC
–1.0
I B , BASE CURRENT (mA)
3. 8.3
Collector
Saturation
Region
Peak Forward SurgeFigure
Current
ms single
half sine-wave
superimposed on rated load (JEDEC method)
–20
–50
–100
0.031(0.8) Typ.
1.0
–55°C to +125°C
1.2
IO
10.0
T A=25°C
CHARACTERISTICS
302.8
40
50
60
80
100
150
200
21
28
35
42
56
70
105
140
40
50
60
80
100
150
200
30
–0.2
–1.0
–10
1.0
I C , COLLECTOR
CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
30
300
-55 to +125
40
120
400
–100
-55 to +150
- 65 to +175
200
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
100
VF
Maximum Forward Voltage at 1.0A DC
Maximum3.0Average Reverse Current at @TC
A=25℃
ob
@T A=125℃
Rated DC Blocking Voltage
2.0
IFSM
TSTG
7.0
5.0
20
–20
TJ
C ib
Storage Temperature Range
–10
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
1.6
RΘJA
Typical Thermal Resistance (Note 2)
V, VOLTAGE (VOLTS)
–10
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
2.4
I C= –100 mA
12
13
14
15
16
18
10
115
120
Maximum Average Forward Rectified Current
IR
2.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
RATINGS
–10 mA
I C= –50 mA
Maximum Recurrent Peak Reverse Voltage
NOTES:
–5.0
I C , COLLECTOR CURRENT (mAdc)
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
VCE, COLLECTOR– EMITTER VOLTAGE (V)
IC=
Maximum DC Blocking Voltage
–2.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
–1.2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
–0.5
–1.0
0.031(0.8) Typ.
Figure 2. “Saturation” and “On” Voltages
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
•–2.0Mounting Position : Any
• Weight : Approximated 0.011 gram
T A = 25°C
Marking Code
0.040(1.0)
0.024(0.6)
0
C
–0.8
0.071(1.8)
0.056(1.4)
V BE(on) @ V CE = –10 V
–0.6
2026 DC Current Gain
FigureMethod
1. Normalized
0.012(0.3) Typ.
V BE(sat) @ I C /I B=10
–0.2
0.3
Mechanical
data
–1.6
0.146(3.7)
0.130(3.3)
2- Thermal Resistance From Junction to Ambient
80
0.50
V CE =–10V
0.85
T A = 25°C
0.70
0.5
0.9
0.92
10
60
40
30
20
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
2012-06
2012-
–20 –30 –40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
BC858A/B/CLT1
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•0.5
Halogen free product for packing code suffix "H"
Mechanical
0.2
data
–1.0
–0.8
–0.4
–0.2
VCE(sat) @ I C /I B= 10
0
–0.2
θVB , TEMPERATURE COEFFICIENT (mV/°C)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
–1.0
–1.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
–1.8
Single–1.2
phase half wave, 60Hz, resistive of inductive load.
θ VB for V BE
For capacitive load, derate current by 20%
–55°C to 125°C
–0.8
–2.2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
–0.4
Maximum
Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS
TJVoltage
= 25°C
VRMS
14
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
Maximum Average Forward Rectified Current
, BASE
CURRENT
(mA)
Peak Forward Surge CurrentI B8.3
ms single
half sine-wave
Collector
Saturation
superimposed on Figure
rated load9.(JEDEC
method)
20
VDC
–5.0 –10 –20
IO
IFSM
Region
40
C, CAPACITANCE (pF)
Storage Temperature Range
20
TSTG
T
= 25°C
J
C ib
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
NOTES:
6.0
IR
C ob
4.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2.0
–0.1–0.2 –0.5
2012-06
2012-
–1.0 –2.0
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30–3.0 40
50
60
80
100
150
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
1.0
I C , COLLECTOR CURRENT (mA)
30
200
Figure 10. Base–Emitter Temperature Coefficient
40
120
500
-55 to +150
VCE= –5.0 V
- 65 to +175
SYMBOL FM120-MH FM130-MH
200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
10
8.0
16
60
-55 to +125
TJ
Operating Temperature Range
15
50
CJ
Typical Junction Capacitance (Note 1)
14
40
RΘJA
Typical Thermal Resistance (Note 2)
13
30–2.6
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
0 Blocking Voltage
Maximum DC
–50 –100
–200
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Marking Code
–5.0 –10 –20
Figure 8. “On” Voltage
• Polarity : Indicated by cathode band
• Mounting Position : Any
–2.0
• Weight : Approximated 0.011 gram
IC =
–100mA –200mA
–20mA
–50mA
Ratings at 25℃
ambient temperature unless otherwise specified.
–10 mA
–0.5
–1.0 –2.0
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
0.071(1.8)
0.056(1.4)
VBE @VCE= –5.0 V
I C , COLLECTOR CURRENT (mA)
Method 2026
0.012(0.3) Typ.
VBE(sat) @ I C/I B= 10
–0.6
• Epoxy : UL94-V0 rated flame retardant
–0.1–0.2
–1.0–2.0
: Molded
plastic,–5.0–10–20
SOD-123H –50–100–200
• Case
,
• Terminals :Plated terminals, solderable per MIL-STD-750
–1.6
0.146(3.7)
0.130(3.3)
T J= 25°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
optimize board space.
• Low power loss, high efficiency.
capability, low forward voltage drop.
• High current
V CE = –5.0V
capability.
• High surge
T A = 25°C
for overvoltage protection.
• Guardring
2.0
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
1.0
• Lead-free parts meet environmental standards of
SOD-123H
BC856
–5.0 –10 –20
–50 –100
0.50
0.70
0.85
0.9
0.92
0.5
100
10
50
20
–1.0
–10
–100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
BC858A/B/CLT1
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
• Low profile surface mounted application in order to
1.0 optimize board space.
0.7• Low
power loss, high efficiency.
D=0.5
0.5• High current capability, low forward voltage drop.
0.2 surge capability.
• High
0.3• Guardring for overvoltage protection.
0.2• Ultra high-speed switching.
SINGLE PULSE
0.05
epitaxial planar chip, metal silicon junction.
• Silicon0.1
0.1• Lead-free parts meet environmental standards of
SINGLE PULSE
0.07 MIL-STD-19500 /228
RoHS
product
for
packing
code
suffix "G"
•
0.05
Halogen free product for packing code suffix "H"
0.03Mechanical data
0.02
• Epoxy : UL94-V0 rated flame retardant
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
0.040(1.0)
T J(pk) – T C = P (pk) R θJC 0.024(0.6)
(t)
P(pk)
t1
t2
DUTY CYCLE, D = t 1 /t 2
0.01• Case : Molded plastic, SOD-123H
0.2 :Plated
0.5terminals,
1.0
2.0
5.0
10
20 ,
•0.1
Terminals
solderable
per MIL-STD-750
–200
0.012(0.3) Typ.
0.031(0.8) Typ.
50
100
Method 2026
t, TIME (ms)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Figure 13. Thermal Response
0.031(0.8) Typ.
200
500
1.0k 2.0k
5.0k
10k
Dimensions in inches and (millimeters)
The safe operating area curves indicate I C –V CE limits of the
1s AND ELECTRICAL
3 ms
MAXIMUM RATINGS
CHARACTERISTICS
transistor that must be observed for reliable operation. Collector
I C , COLLECTOR CURRENT (mA)
–100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
resistiveTof=inductive
load.
25°C
TA= 25°C
–50 phase half wave, 60Hz,
J
For capacitive load, derate current by 20%
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is
variable
depending upon conditions. Pulse curves are valid for
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
BC558
duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcuMarking Code
12
13
14
15
16
18
10
115
120
BC557
lated
the data50
in Figure
or ambient
–10 Recurrent Peak Reverse Voltage
20
30 from 40
6013. At high
80 case100
150
200
Maximum
VRRM
BC556
temperatures, thermal limitations will reduce the power that can
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
be handled to values less than the limitations imposed by the sec–5.0
BONDING WIRE LIMIT
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
ondary breakdown.
THERMAL LIMIT
Maximum Average Forward
Rectified
Current
I
O
1.0
SECOND BREAKDOWN LIMIT
–2.0
Peak Forward
ms single
half sine-wave
–1.0 Surge Current 8.3
–0.5
–10
–30 IFSM
–45 –65 –100
30
superimposed on rated load (JEDEC method)
, COLLECTOR–EMITTER
VOLTAGE
(V)
Typical ThermalVResistance
(Note 2)
RΘJA
CE
Figure
14. Active
Region
Safe Operating
Typical Junction
Capacitance
(Note
1)
CJ Area
TJ
Operating Temperature Range
Storage Temperature Range
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
BC858A/B/CLT1
WILLAS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.106(2.70)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
.110(2.80)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.083(2.10)
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
.080(2.04)
• Weight : Approximated
0.011 gram
.070(1.78)
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
.020(0.50)
IO
.012(0.30)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
14
40
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
IFSM
15
50
16
60
18
80
35
42
50
60
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
40
120
RΘJA
Dimensions
in inches and (millimeters)
Typical Thermal Resistance (Note 2)
10
100
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BC856A/BLT1
FM120-M+
THRU
BC857A/B/CLT1
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
BC858A/B/CLT1
WILLAS
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability, low
(1) forward voltage drop.
‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• High Part Number G
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
TypicalWILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55
to
+125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range
TSTG
or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures
. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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