BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • • • • Low power loss, high efficiency. • High current capability, low forward voltage drop. capability. • High surge Moisture Sensitivity Level: 1 Guardring for overvoltage protection. • ESD Rating – Human Body Model: >4000 V • Ultra high-speed switching. ESD Rating – Machine Model: >400 V • Silicon epitaxial planar chip, metal silicon junction. We• Lead-free declare that the material of product compliance with parts meet environmental standards of MIL-STD-19500 /228 RoHS requirements. for packing code suffix "G" • RoHS product Pb-Free package is available Halogen free product for packing code suffix "H" RoHS product for packing Mechanical data code suffix ”G” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 3 1 2 Halogen product for packing code suffix “H” : UL94-V0 rated flame retardant • Epoxyfree • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 SOT–23 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band MAXIMUM RATINGS (TA = 25°C unless otherwise noted) • Mounting Position : Any Rating Symbol Value • Weight : Approximated 0.011 gram Collector-Emitter Voltage BC856 VCEO –65 BC857 –45 MAXIMUM RATINGS AND ELECTRICAL BC858 –30 Ratings at 25℃ ambient temperature unless otherwise specified. Collector-Base Voltage BC856 VCBO –80 Single phase half wave, 60Hz, resistive of inductive load. BC857 –50 For capacitive load, derate current by 20% BC858 –30 RATINGS 3 COLLECT OR Dimensions in inches and (millimeters) 1 B ASE Unit V 2 EMIT T ER CHARACTERISTICS V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Emitter–Base Voltage VEBO IC VRRM –5.0 12 –100 20 V 13 mAdc 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Marking Code Collector Current – Continuous Maximum Recurrent Peak Reverse Voltage THERMAL CHARACTERISTICS Maximum Average Forward Rectified Current Characteristic IO Symbol IFSM PD RΘJA Peak Forward Surge Current 8.3 ms single half sine-wave Total Device Dissipation FR–5 Board, superimposed on rated load (JEDEC method) 1.) Resistance TA = 25°C (Note 2) Typical(Note Thermal Derate above 25°C CJ RqJATJ Typical Junction Capacitance (Note 1) Thermal Resistance, Operating Temperature Range Junction to Ambient Storage Temperature Range 0.040(1.0) 0.024(0.6) mW mW/°C 556 °C/W -55 to +125 40 120 -55 to +150 - 65 to +175 mW FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL 300 VF @T A=125℃ Junction and Storage Temperature NOTES: 225 1.8 PD Thermal Resistance, Maximum Average Reverse Current at @T A=25℃ RqJA Unit TSTG Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C CHARACTERISTICS Derate above 25°Cat 1.0A DC Maximum Forward Voltage Junction to Ambient Rated DC Blocking Voltage Max 1.0 30 IR TJ, Tstg 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.4 417 mW/°C 0.50 °C/W 0.70 0.85 0.9 0.92 0.5 10 –55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in 2- Thermal Resistance 2. Alumina = 0.4 From x 0.3 Junction x 0.024 to in.Ambient 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V BC858A/B/CLT1 SOD-123+ PACKAGE WILLAS Pb Free Product ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Features Package outline excellent power dissipation offers • Batch process design,Characteristic better reverse leakage current and thermal resistance. OFF CHARACTERISTICS • Low profile surface mounted application in order to Collector–Emitter Breakdown BC856 Series optimize board space.Voltage (IC• =Low –10power mA) loss, high efficiency. BC857 Series BC858,Series drop. • High current capability, low forward voltage capability.Voltage • High surgeBreakdown Collector–Emitter BC856 Series (IC• =Guardring –10 µA, VEB 0) for =overvoltage protection. BC857 Series BC858,Series • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • Collector–Base Breakdown Voltage BC856 Series of (IC• =Lead-free –10 mA) parts meet environmental standards BC857 Series MIL-STD-19500 /228 BC858,Series • RoHS product for packing code suffix "G" Emitter–Base Voltage BC856 HalogenBreakdown free product for packing code suffix "H" Series (IE = –1.0 mA) BC857 Series Mechanical data BC858,Series Epoxy : UL94-V0 rated flame retardant • Collector Cutoff Current (VCB = –30 V) : Molded • Case Collector Cutoff Currentplastic, (VCB =SOD-123H –30 V, TA = 150°C) RATINGS Max Unit – – – – – – V –80 –50 –30 – – – – – – V(BR)CBO –80 –50 –30 – – – – – – V V(BR)EBO –5.0 –5.0 –5.0 – – – – – – V ICBO – – – – –15 –4.0 SOD-123H V(BR)CEO –65 –45 –30 0.031(0.8) Typ. , 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. V 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) nA µA 0.031(0.8) Typ. hFE – Dimensions in inches 125 180 and (millimeters) 250 VCE(sat) CHARACTERISTICS VBE(sat) VBE(on) 14 15 40 50 VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product Maximum Current (IC =Average –10 mA,Forward VCE = Rectified –5.0 Vdc, f = 100 MHz) Output Capacitance Peak Forward Surge Current 8.3 ms single half sine-wave (VCB = –10 V, f = 1.0 MHz) superimposed on rated load (JEDEC method) IO IFSM RΘJA (I = –0.2 mA, V = –5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) C CE S Typical Junction Capacitance (Note 1) CJ BC856,BC857,BC858 Series -55 to +125 Operating Temperature Range TJ Storage Temperature Range fT Cob Noise FigureResistance (Note 2) Typical Thermal Typ 220 420 290 520 475 800 – – – – –0.3 –0.65 – – –0.7 –0.9 – – V V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Base–Emitter On Voltage Marking (ICCode = –2.0 mA, VCE = –5.0 V) Maximum (IC =Recurrent –10 mA, Peak VCE Reverse = –5.0 V)Voltage Min V(BR)CES • Terminals :Plated terminals, solderable per MIL-STD-750 ON CHARACTERISTICS DC Current Gain Method 2026 : Indicated byV)cathode band (IC• =Polarity –2.0 mA, VCE = –5.0 BC856A,BC857A,BC858A • Mounting Position : Any BC856B,BC857B,BC858B BC857C,BC858C • Weight : Approximated 0.011 gram Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) MAXIMUM RATINGS AND ELECTRICAL (IC = –100 mA, IB = –5.0 mA) Ratings at 25℃ ambient temperature unless otherwise specified. Base–Emitter Voltage Single phase halfSaturation wave, 60Hz, resistive of inductive load. (IC = –10 mA, IB = –0.5 mA) For capacitive load, derate current by 20% (IC = –100 mA, IB = –5.0 mA) Symbol TSTG –0.616 – 60 – 18 – 80 35 42 56 70 50 60 80 100 – 100 – NF – 1.0 30 40 120 – 10 –0.75 100 –0.82 – 4.5 – V 115 150 120 200 105 140 150 MHz 200 pF dB 10 -55 to +150 - 65 to +175 DEVICE MARKING AND ORDERING INFORMATION DeviceCHARACTERISTICS FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking SYMBOL FM120-MH FM130-MH Package Shipping 0.9 0.92 VF 0.50 0.70 0.85 BC856ALT1 3A SOT-23 3000/Tape&Reel 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DCBC856BLT1 Blocking Voltage 3B SOT-23 3000/Tape&Reel Maximum Forward Voltage at 1.0A DC NOTES: BC857ALT1 3E 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 3000/Tape&Reel BC857BLT1 3F SOT-23 3000/Tape&Reel BC857CLT1 3G SOT-23 3000/Tape&Reel BC858ALT1 3J SOT-23 3000/Tape&Reel BC858BLT1 3K SOT-23 3000/Tape&Reel BC858CLT1 3L SOT-23 3000/Tape&Reel 2- Thermal Resistance From Junction to Ambient 2012-06 2012- SOT-23 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ BC857A/B/CLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- BC858A/B/CLT1 200V WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers BC857/ BC858 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to 0.5 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" –1.0 T A = 25°C –0.9 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN optimize board space. •2.0Low power loss, high efficiency. capability, low forward voltage drop. •1.5High Vcurrent = –10 V CE capability. • High Tsurge = 25°C A •1.0Guardring for overvoltage protection. • Ultra high-speed switching. •0.7Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOD-123H –0.8 –0.7 –0.5 –0.4 –0.3 V CE(sat) @ I C /I B = 10 –0.1 •0.2Epoxy : UL94-V0 rated flame retardant –0.2 –1.0 plastic, –2.0 –5.0 –10 –20 –50 –100 –200 :–0.5 Molded SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 I , COLLECTOR CURRENT (mAdc) –0.1 –0.2 I C= –200 mA I C= –20 mA –0.4 VRRM 20 Maximum RMS Voltage VRMS 14 0 –0.02 –0.1 VDC –1.0 I B , BASE CURRENT (mA) 3. 8.3 Collector Saturation Region Peak Forward SurgeFigure Current ms single half sine-wave superimposed on rated load (JEDEC method) –20 –50 –100 0.031(0.8) Typ. 1.0 –55°C to +125°C 1.2 IO 10.0 T A=25°C CHARACTERISTICS 302.8 40 50 60 80 100 150 200 21 28 35 42 56 70 105 140 40 50 60 80 100 150 200 30 –0.2 –1.0 –10 1.0 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 30 300 -55 to +125 40 120 400 –100 -55 to +150 - 65 to +175 200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 100 VF Maximum Forward Voltage at 1.0A DC Maximum3.0Average Reverse Current at @TC A=25℃ ob @T A=125℃ Rated DC Blocking Voltage 2.0 IFSM TSTG 7.0 5.0 20 –20 TJ C ib Storage Temperature Range –10 CJ Typical Junction Capacitance (Note 1) Operating Temperature Range 1.6 RΘJA Typical Thermal Resistance (Note 2) V, VOLTAGE (VOLTS) –10 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 2.4 I C= –100 mA 12 13 14 15 16 18 10 115 120 Maximum Average Forward Rectified Current IR 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. θVB , TEMPERATURE COEFFICIENT (mV/ °C) RATINGS –10 mA I C= –50 mA Maximum Recurrent Peak Reverse Voltage NOTES: –5.0 I C , COLLECTOR CURRENT (mAdc) fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR– EMITTER VOLTAGE (V) IC= Maximum DC Blocking Voltage –2.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. –1.2 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% –0.5 –1.0 0.031(0.8) Typ. Figure 2. “Saturation” and “On” Voltages Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band •–2.0Mounting Position : Any • Weight : Approximated 0.011 gram T A = 25°C Marking Code 0.040(1.0) 0.024(0.6) 0 C –0.8 0.071(1.8) 0.056(1.4) V BE(on) @ V CE = –10 V –0.6 2026 DC Current Gain FigureMethod 1. Normalized 0.012(0.3) Typ. V BE(sat) @ I C /I B=10 –0.2 0.3 Mechanical data –1.6 0.146(3.7) 0.130(3.3) 2- Thermal Resistance From Junction to Ambient 80 0.50 V CE =–10V 0.85 T A = 25°C 0.70 0.5 0.9 0.92 10 60 40 30 20 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 2012-06 2012- –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to MIL-STD-19500 /228 RoHS product for packing code suffix "G" •0.5 Halogen free product for packing code suffix "H" Mechanical 0.2 data –1.0 –0.8 –0.4 –0.2 VCE(sat) @ I C /I B= 10 0 –0.2 θVB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) –1.0 –1.4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS –1.8 Single–1.2 phase half wave, 60Hz, resistive of inductive load. θ VB for V BE For capacitive load, derate current by 20% –55°C to 125°C –0.8 –2.2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS –0.4 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS TJVoltage = 25°C VRMS 14 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 Maximum Average Forward Rectified Current , BASE CURRENT (mA) Peak Forward Surge CurrentI B8.3 ms single half sine-wave Collector Saturation superimposed on Figure rated load9.(JEDEC method) 20 VDC –5.0 –10 –20 IO IFSM Region 40 C, CAPACITANCE (pF) Storage Temperature Range 20 TSTG T = 25°C J C ib CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage NOTES: 6.0 IR C ob 4.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2.0 –0.1–0.2 –0.5 2012-06 2012- –1.0 –2.0 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30–3.0 40 50 60 80 100 150 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 1.0 I C , COLLECTOR CURRENT (mA) 30 200 Figure 10. Base–Emitter Temperature Coefficient 40 120 500 -55 to +150 VCE= –5.0 V - 65 to +175 SYMBOL FM120-MH FM130-MH 200 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 10 8.0 16 60 -55 to +125 TJ Operating Temperature Range 15 50 CJ Typical Junction Capacitance (Note 1) 14 40 RΘJA Typical Thermal Resistance (Note 2) 13 30–2.6 fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 0 Blocking Voltage Maximum DC –50 –100 –200 0.031(0.8) Typ. Dimensions in inches and (millimeters) Marking Code –5.0 –10 –20 Figure 8. “On” Voltage • Polarity : Indicated by cathode band • Mounting Position : Any –2.0 • Weight : Approximated 0.011 gram IC = –100mA –200mA –20mA –50mA Ratings at 25℃ ambient temperature unless otherwise specified. –10 mA –0.5 –1.0 –2.0 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain 0.071(1.8) 0.056(1.4) VBE @VCE= –5.0 V I C , COLLECTOR CURRENT (mA) Method 2026 0.012(0.3) Typ. VBE(sat) @ I C/I B= 10 –0.6 • Epoxy : UL94-V0 rated flame retardant –0.1–0.2 –1.0–2.0 : Molded plastic,–5.0–10–20 SOD-123H –50–100–200 • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 –1.6 0.146(3.7) 0.130(3.3) T J= 25°C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) optimize board space. • Low power loss, high efficiency. capability, low forward voltage drop. • High current V CE = –5.0V capability. • High surge T A = 25°C for overvoltage protection. • Guardring 2.0 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 1.0 • Lead-free parts meet environmental standards of SOD-123H BC856 –5.0 –10 –20 –50 –100 0.50 0.70 0.85 0.9 0.92 0.5 100 10 50 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) • Low profile surface mounted application in order to 1.0 optimize board space. 0.7• Low power loss, high efficiency. D=0.5 0.5• High current capability, low forward voltage drop. 0.2 surge capability. • High 0.3• Guardring for overvoltage protection. 0.2• Ultra high-speed switching. SINGLE PULSE 0.05 epitaxial planar chip, metal silicon junction. • Silicon0.1 0.1• Lead-free parts meet environmental standards of SINGLE PULSE 0.07 MIL-STD-19500 /228 RoHS product for packing code suffix "G" • 0.05 Halogen free product for packing code suffix "H" 0.03Mechanical data 0.02 • Epoxy : UL94-V0 rated flame retardant 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 0.040(1.0) T J(pk) – T C = P (pk) R θJC 0.024(0.6) (t) P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 0.01• Case : Molded plastic, SOD-123H 0.2 :Plated 0.5terminals, 1.0 2.0 5.0 10 20 , •0.1 Terminals solderable per MIL-STD-750 –200 0.012(0.3) Typ. 0.031(0.8) Typ. 50 100 Method 2026 t, TIME (ms) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Figure 13. Thermal Response 0.031(0.8) Typ. 200 500 1.0k 2.0k 5.0k 10k Dimensions in inches and (millimeters) The safe operating area curves indicate I C –V CE limits of the 1s AND ELECTRICAL 3 ms MAXIMUM RATINGS CHARACTERISTICS transistor that must be observed for reliable operation. Collector I C , COLLECTOR CURRENT (mA) –100 Ratings at 25℃ ambient temperature unless otherwise specified. Single resistiveTof=inductive load. 25°C TA= 25°C –50 phase half wave, 60Hz, J For capacitive load, derate current by 20% load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS BC558 duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcuMarking Code 12 13 14 15 16 18 10 115 120 BC557 lated the data50 in Figure or ambient –10 Recurrent Peak Reverse Voltage 20 30 from 40 6013. At high 80 case100 150 200 Maximum VRRM BC556 temperatures, thermal limitations will reduce the power that can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS be handled to values less than the limitations imposed by the sec–5.0 BONDING WIRE LIMIT Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC ondary breakdown. THERMAL LIMIT Maximum Average Forward Rectified Current I O 1.0 SECOND BREAKDOWN LIMIT –2.0 Peak Forward ms single half sine-wave –1.0 Surge Current 8.3 –0.5 –10 –30 IFSM –45 –65 –100 30 superimposed on rated load (JEDEC method) , COLLECTOR–EMITTER VOLTAGE (V) Typical ThermalVResistance (Note 2) RΘJA CE Figure 14. Active Region Safe Operating Typical Junction Capacitance (Note 1) CJ Area TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .122(3.10) • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .106(2.70) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .083(2.10) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram .070(1.78) Dimensions in inches and (millimeters) .008(0.20) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current .020(0.50) IO .012(0.30) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IFSM 15 50 16 60 18 80 35 42 50 60 CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 40 120 RΘJA Dimensions in inches and (millimeters) Typical Thermal Resistance (Note 2) 10 100 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V BC858A/B/CLT1 WILLAS Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, low (1) forward voltage drop. ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High Part Number G Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 TypicalWILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range TSTG or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures . NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.