SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low figure-of-merit Ron x Qg 0.07 Qg max. (nC) 216 • 100 % avalanche tested Qgs (nC) 39 • Ultra low gate charge Qgd (nC) 57 • Ultra low Ron Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D APPLICATIONS TO-247AC • PFC power supply stages • Hard switching topologies G • Solar inverters • UPS S D • Motor control S G • Server telecom N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG47N60S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID 140 Avalanche Energy (repetitive) EAR 0.42 Single Pulse Avalanche Energy b EAS 1800 3.3 Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s V 47 30 IDM Linear Derating Factor UNIT A W/°C mJ PD 417 W TJ, Tstg -55 to +150 °C dV/dt 37 8.5 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 Ω, IAS = 7 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N60S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.3 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.7 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance a RDS(on) VDS = 600 V, VGS = 0 V - - 1 VDS = 600 V, VGS = 0 V, TJ = 150 °C - - 10 VGS = 10 V - 0.057 0.07 Ω S ID = 24 A gfs VDS = 8 V, ID = 3 A - 7.5 - VGS = 0 V, VDS = 100 V, f = 1 MHz - 6630 - - 220 - - 7 - - 180 216 - 39 - μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 20 A, VDS = 400 V Gate-Drain Charge Qgd - 57 - Turn-On Delay Time td(on) - 30 60 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg pF nC VDD = 380 V, ID = 47 A, Rg = 4.4 Ω, VGS = 13 V - 12 25 - 115 175 - 9 20 f = 1 MHz, open drain - 0.62 - - - 47 - - 140 - - 1.2 - 750 1125 ns - 18 36 μC - 39 80 A ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D G A S TJ = 25 °C, IS = 47 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 25 V V Note a. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N60S www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 160 3 15V 14V 13V 12V 11V 10V 9.0V 8.0V 7.0V 6.0V BOTYTOM 5.0V ID , Drain-to-Source Current (A) 120 100 80 RDS(on), Drain-to-Source On Resistance (Normalized) TOP 140 TJ =25 °C 60 40 20 2,5 ID=47A 2 1,5 1 0,5 VGS=10V 5.0V 0 0 Įķı ıġ Ķġ IJıġ IJĶġ Įĵı Įijı ı ijı ĵı ķı Ĺı IJıı IJijı IJĵı IJķı ijıġ TJ , Junction Temperature (°C) V DS , Drain-to-Source Voltage (V) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics (TO-247) 100 000 100 TOP 15V 14V 13V 12V 11V 10V 9.0V 8.0V 7.0V 6.0V BOTYTOM 5.0V 60 TJ=150°C 10 000 C - Capacitance (pF) ID , Drain-to-Source Current (A) 80 40 5.0V 20 Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd Coss 1000 100 10 Crss 0 1 ıġ Ķġ IJıġ IJĶġ ijıġ 0 100 V DS , Drain-to-Source Voltage (V) 300 400 500 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics (TO-247) 24 160 140 VGS, Gate to Source Voltage (V) 100 80 60 TJ=150°C 40 TJ=25°C 20 Ķġ IJıġ IJĶġ ijıġ VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0983-Rev. F, 27-Apr-15 16 12 8 4 0 ıġ VDS=480V VDS=300V VDS=120V I D=47A 20 120 ID , Drain-to-Source Current (A) 200 VDS - Drain-to-Source Voltage (V) ijĶġ 0 0 50 100 150 200 250 300 350 QG, Total gate charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91341 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N60S www.vishay.com Vishay Siliconix IJııı 1000 ŊŅ ĭġŅųŢŪůĮŵŰĮŔŰŶųŤŦġńŶųųŦůŵġĩłĪ ŐőņœłŕŊŐŏġŊŏġŕʼnŊŔġłœņł ōŊŎŊŕņŅġŃŚġœ ŅŔĩŐŏĪ ISD , Reverse Drain Current (A) 100 TJ=150°C 10 TJ=25°C 1 IJıı IJı 100μŴŦŤ IJġŮġŴŦŤ IJ IJıġŮġŴŦŤ VGS=0V ŕń ľġijĶġɗ ŕŋ ľġIJĶıġɗ ŔŪůŨŭŦġőŭŶŴŦ 0,1 ıĭij ıĭĵ ıĭķ ıĭĹ IJ IJĭij ıĭIJ IJĭĵ IJ VSD , Source -to-Drain Voltage (V) IJı IJıı IJııı ŗŅŔ ĭġŅųŢŪůĮŵŰĮŔŰŶųŤŦġŗŰŭŵŢŨŦġĩŗĪ Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 Thermal Response (ZthJC) 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.01 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-247AC) VDS VGS RD 15 V D.U.T. RG + - VDD L VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % D.U.T. RG IAS Fig. 10 - Switching Time Test Circuit 20 V VDS tp 90 % Driver + A - VDD A 0.01 Ω Fig. 12 - Unclamped Inductive Test Circuit 10 % VGS t d(on) tr t d(off) t f Fig. 11 - Switching Time Waveforms S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N60S www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. V DS 50 kΩ tp 12 V 0.2 µF 0.3 µF D.U.T. + V - DS VGS 3 mA I AS IG ID Current sampling resistors Fig. 13 - Unclamped Inductive Waveforms Fig. 15 - Gate Charge Test Circuit QG VGS QGS QGD VG Charge Fig. 14 - Basic Gate Charge Waveform S15-0983-Rev. F, 27-Apr-15 Document Number: 91341 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG47N60S www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 16 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. 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