2N7002DW1T1(SOT 363)

WILLAS
FM120-M+
THRU
2N7002DW1T1
FM1200-M+
Small Signal MOSFET 115 mAmps,60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
N–Channel SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
declare
that the material of product are Halogen Free and
optimize
space.
• Weboard
loss, high
efficiency.
• Low power
compliance
with
RoHS requirements.
• High current capability, low forward voltage drop.
• ESD Protected:1000V
• High surge capability.
•
Pb-Free
package is available
for overvoltage protection.
• Guardring
switching.
• Ultra high-speed
RoHS product
for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
product for RATINGS
packing code suffix "G"
• RoHSMAXIMUM
Halogen free product for packing code suffix "H"
Rating
Mechanical data
Symbol
Drain−Source
Voltage
VDSS
: UL94-V0 rated
flame retardant
• Epoxy
Voltage SOD-123H
(RGS = 1.0 M)
VDGR
: Molded plastic,
• CaseDrain−Gate
,
Drain :Plated
Current terminals, solderable per MIL-STD-750
ID
• Terminals
ID
− Continuous
TC = 25°C (Note 1)
Method 2026
− Continuous TC = 100°C (Note 1)
Polarity−: Pulsed
Indicated
by2)
cathode band
(Note
IDM
•
PositionVoltage
: Any
• Mounting
Gate−Source
Continuous
• Weight −: Approximated
0.011 gram
Value
Unit
60
Vdc
60
Vdc
± 115
± 75
± 800
mAdc
0.031(0.8) Typ.
± 20
± 40
VGS
VGSM
Vdc
Vpk
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derateCHARACTERISTICS
current by 20%
THERMAL
RATINGS
Characteristic
Marking Code
Total Device Dissipation
Maximum Recurrent
Reverse Voltage
PerPeak
Device
FR−5 Board (Note 1)
Maximum RMS Voltage
Maximum Average Forward Rectified Current
Thermal Resistance,
RJA
Junction
Peak Forward Surge
Current to
8.3Ambient
ms single half sine-wave
superimposed onJunction
rated load
(JEDEC
method)
and
Storage
Temperature
Range
Typical Thermal Resistance
(Note
2)
D2
G1
1
0.040(1.0)
0.024(0.6)
S1
0.031(0.8) Typ.
S2
G2
D1
4
5
6
SymbolSYMBOL FM120-MH
Max FM130-MH FM140-MH
Unit FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115
120
PD
380
mW
20
30
40
50
60
80
100
150
200
Volts
VRRM
250
TA = 25°C
Maximum DC Blocking
Voltage
Derate Above 25°C
2
Dimensions in inches and (millimeters)
− Non−repetitive (tp ≤ 50 s)
3
TJ, Tstg
Typical Junction
Capacitance
1. FR−5
= 1.0 x(Note
0.75 1)
x 0.062 in
Operating Temperature Range
Storage Temperature Range
ORDERING INFORMATION
VRMS
14
21
28
35
42
VDC
20
3.0
30
40
mW/°C
50
60 Device80
1.0
2N7002DW1T1
30
IO
IFSM
RΘJA
CJ
TJ
328
°C/W
−55 to +150
°C
56
40
120
-55 to +125
70
100
Marking
702
140
Volts
150 Shipping
200
Volts
105
PF
℃
- 65 to +175
TSTG
Amps
℃/W
-55 to +150
Amps
3000 Tape & Reel
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002DW1T1
FM1200-M+
Small Signal MOSFET 115 mAmps,60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
(TA = 25°C unless
ELECTRICAL
CHARACTERISTICS
process design,
excellent power dissipation
offers otherwise noted)
• Batch
better reverse leakage current and thermal resistance.
Characteristic
SOD-123H Typ
Min
Symbol
• Low profile surface mounted application in order to
optimize
board space.
OFF CHARACTERISTICS
• Low power loss, high efficiency.
Drain–Source Breakdown Voltage
capability, low forward voltage drop.
• High(Vcurrent
GS = 0, ID = 10 µAdc)
capability.
• High surge
Zero Gatefor
Voltage
Drain Current
TJ = 25°C
overvoltage
protection.
• Guardring
60 Vdc)
TJ = 125°C
GS = 0, VDS =
switching.
• Ultra(Vhigh-speed
epitaxial
planar
chip, metal
silicon junction.
• Silicon
Gate–Body
Leakage
Current,
Forward
meet environmental standards of
• Lead-free
20 Vdc)
(VGS = parts
0.146(3.7)
V(BR)DSS
MIL-STD-19500 /228
= –product
(VGSfree
20 Vdc)for packing code suffix "H"
Halogen
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Method 2026
Static Drain–Source
• Polarity
: Indicated byOn–State
cathodeVoltage
band
(VGS = 10 Vdc, ID = 500 mAdc)
• Mounting
(VGS =Position
5.0 Vdc, I:DAny
= 50 mAdc)
• Weight
: Approximated 0.011 gram
Static Drain–Source On–State Resistance
TC = 25°C
(VGS = 10 V, ID = 500 mAdc)
MAXIMUM RATINGS AND
125°C
TC =ELECTRICAL
(VGSambient
= 5.0 Vdc,
ID = 50 mAdc)
Ratings at 25℃
temperature
unless T
otherwise
C = 25°C specified.
TC = 125°C
Single phase half wave, 60Hz, resistive of inductive
load.
Forward
For capacitive
load, Transconductance
derate current by 20%
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC
Marking Code
RATINGS
CHARACTERISTICS
IGSSF
–
–
1
µAdc
IGSSR
–
–
-1
µAdc
VGS(th)
1.0
–
500
–
CHARACTERISTICS
gFS
12
20
13
30
14
21
VDC
20
30
Storage Temperature Range
BODY–DRAIN DIODE RATINGS
Diode Forward
On–Voltage
CHARACTERISTICS
(IS =Voltage
11.5 mAdc,
VGS
Maximum Forward
at 1.0A
DC= 0 V)
Maximum Average
at @T A=25℃
SourceReverse
CurrentCurrent
Continuous
(Body
Diode)
Rated DC Blocking
Voltage
NOTES:
@T A=125℃
16
60
28
15
50
Ciss
35
40
50oss
C
60
42
2.0
–
Vdc
mA
–
–
–
–
–
–
–
–
7.5
13.5
7.5
13.5
80
–
–
TSTG
–
18
80
Vdc
Ohms
mmhos
56
10
– 100
70
50 150
105
120
pF200
140
–
80
– 100
25 150
pF200
1.0
–
30
Crss
CJ , I ^ 500 mAdc, (V DD = 25 Vdc
D
TLJ = 50 Ω, Vgen =-55
RG = 25 Ω, R
10to
V)+125
Operating Temperature
Range
Turn–Off Delay
Time
14
40
IO
IFSM
SWITCHING
(Note
2.)
Typical Thermal
ResistanceCHARACTERISTICS
(Note 2)
RΘJA
Typical Junction
Capacitance
(Note 1)
Turn–On
Delay Time
0.040(1.0)
0.024(0.6)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRMS
superimposed on rated load (JEDEC method)
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
rDS(on)
Maximum DC
Blocking
Voltage
Output
Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
µAdc
0.012(0.3) Typ.
VDS(on)
Dimensions in inches and (millimeters)
–
–
3.75
–
–
0.375
Maximum RMS(V
Voltage
DS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Peak Forward Surge Current 8.3 ms single half sine-wave
1.0
500
–
–
ID(on)
VRRM
Vdc
–
–
0.031(0.8) Typ.
Maximum Recurrent
Peak Reverse Voltage
Input Capacitance
(VDSForward
= 25 Vdc,
VGS = Current
0, f = 1.0 MHz)
Maximum Average
Rectified
–
–
Mechanical
data (Note 2.)
ON CHARACTERISTICS
UL94-V0Voltage
rated flame retardant
• Epoxy
Gate :Threshold
=
V
,
I
µAdc)
(V
GS plastic,
D = 250 SOD-123H
• Case :DSMolded
,
On–State:Plated
Drain Current
• Terminals
terminals, solderable per MIL-STD-750
Unit
600.130(3.3)
IDSS
Gate–Body
Current,
Reverse
productLeakage
for packing
code suffix
"G"
• RoHS
Max
td(on)
td(off)
40
120
–
–
- 65 to +175
115
Volts
Volts
Volts
Amps
–
5.0
pF
Amps
℃/W
–
20
-55 to +150
–
40
ns
PF
ns
℃
℃
FM1150-MH
FM1200-MH UNIT
VSD FM160-MH
– FM180-MH FM1100-MH
–
–1.5
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
VF
IR
Source Current Pulsed
0.50
0.70
0.85
0.9
0.92
IS
0.5–
10
–
–115
mAdc
ISM
–
–
–800
mAdc
Volts
mAmps
2.atPulse
Pulse Width
300 µs,
Duty
Cycle ≤ 2.0%.
1- Measured
1 MHZTest:
and applied
reverse≤voltage
of 4.0
VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002DW1T1
FM1200-M+
Small Signal MOSFET 115 mAmps,60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TYPICAL
CHARACTERISTICSSOD-123H
in orderELECTRICAL
to
• Low profile surface mounted application
optimize board space.
MIL-STD-19500
/228
1.0
• RoHS product for packing code suffix "G"
0.8
Halogen free product for packing code suffix "H"
0.6
Mechanical
data
VDS = 10 V
6V
5V
125°C
0.6
0.4
0.040(1.0)
0.024(0.6)
0.2
0.031(0.8) Typ.
10
0
1.0
Marking Code
9.0
10
1.2
RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
1.0
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
1.4
1.2
1.0
0.8
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
0.4
superimposed on rated
-o60 load (JEDEC
-o20method) +o20
+o60
(°C)
Typical Thermal Resistance (Note 2) T, TEMPERATURE R
ΘJA
Maximum Average Forward Rectified Current
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.2ambient temperature unless otherwise specified.
Ratings at 25℃
VGS =60Hz,
10 V resistive of inductive load.
Single phase half
2.0 wave,
ID = 200 mA
For capacitive load, derate current by 20%
1.8
1.6
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
•
Figure 1. Ohmic Region
• Mounting Position : Any
• Weight : Approximated 0.011 gram
25°C
-o55°C
0.071(1.8)
0.056(1.4)
MethodV2026
DS, DRAIN SOURCE VOLTAGE (VOLTS)
Polarity : Indicated by cathode band
2.4MAXIMUM
0.012(0.3) Typ.
0.8
7V
0.4: UL94-V0 rated flame retardant
• Epoxy
4V
: Molded plastic, SOD-123H
• Case0.2
3 V,
0
• Terminals
terminals,
solderable
per MIL-STD-750
0 :Plated
1.0 2.0
3.0 4.0
5.0
6.0
7.0 8.0 9.0
0.146(3.7)
0.130(3.3)
1.0
ID, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• High 2.0
TA = 25°C
surge capability.
• High 1.8
for overvoltage protection.
• Guardring
1.6
VGS = 10 V
• Ultra high-speed switching.
1.4
9V
• Silicon epitaxial planar chip, metal silicon junction.
1.2
• Lead-free parts meet environmental standards of
8V
0.6
CJ
Typical Junction Capacitance (Note 1)
+o100
14
0.95
40
0.9
28
0.85
40
0.8
0.75
0.7
+o140
Figure 3. Temperature versus Static -55 to +125
Operating Temperature Range
TJ
Drain–Source On–Resistance
Storage Temperature Range
15
50
16
60
18
80
10
100
115
150
120
200
Volts
35
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
1.0
30
-o60
-o20
+o20
+o60
(°C)
T, TEMPERATURE
40
120
Figure
versus Gate
4. Temperature
-55 to +150
Amps
Amps
+o100
+o140
℃/W
PF
℃
Threshold Voltage
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002DW1T1
FM1200-M+
Small Signal MOSFET 115 mAmps,60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOD-123H
SOT−363
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.087(2.20)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.071(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.030(0.75)
• Terminals :Plated terminals, solderable
per MIL-STD-750
.021(0.55)
Method 2026
.071(1.80)
.096(2.45)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
• Polarity : Indicated by cathode band
.056(1.40)
• Mounting Position : Any
.047(1.20)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.016(0.40)
12
20
VRRM
.004(0.10)
13
30
VRMS
14
21
VDC
20
30
16
60
18
80
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
Amps
℃/W
PF
℃
- 65 to +175
0.50
0.0197
CHARACTERISTICS
Amps
-55 to +150
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.50
0.70
0.85
0.5
IR
0.65
0.025
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
40
120
TJ
Storage Temperature Range
1.0
30
SOLDERING -55
FOOTPRINT*
to +125
Operating Temperature Range
Rated DC Blocking Voltage
15
50
IO
IFSM
CJ
Typical Junction Capacitance (Note 1)
14
40
Dimensions in inches and (millimeters)
RΘJA
Typical Thermal Resistance (Note 2)
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature
unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
10
0.9
0.92
Volts
mAmps
0.65
0.025
2- Thermal Resistance From Junction to Ambient
0.40
0.0157
1.9
0.0748
2012-06
2012-0
SCALE 20:1
mm inches
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Small Signal MOSFET 115 mAmps,60 Volts
2N7002DW1T1
Ordering Information: Device PN 2N7002DW1T1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0
WILLAS ELECTRONIC CORP.
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