WILLAS FM120-M+ SOTxxC THRU FM1200-M+ Dual Transient Voltage Suppressors Array for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H General Description optimize board space. Features Low power loss, high •The SOTxxC is aefficiency. dual monolithic voltage • High current capability, low forward voltage drop. suppressor designed to protect components which • High surge capability. are •connected data and transmission lines Guardring fortoovervoltage protection. Ultra high-speed switching. • against ESD. It clamps the voltage just above the • Silicon epitaxial planar chip, metal silicon junction. logic• level supply positive transients and to Lead-free partsfor meet environmental standards of a MIL-STD-19500 /228 diode drop below ground for negative transients. It • RoHS product for packing code suffix "G" can also work as bidirectional suppressor by Halogen free product for packing code suffix "H" z 0.146(3.7) 2 Unidirectional Transil functions 0.130(3.3) z Low leakage current: IR max< 20 μA at VRM z 300W peak pulse power(8/20μs) z Transient protection for data lines as per z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical connecting only pin1 data and 2. z Moisture Sensitivity Level 1 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Complies with the following standards • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. Applications , IEC61000-4-2 • Terminals :Plated terminals, solderable per MIL-STD-750 z Computers Level 4 15 kV (air discharge) Method 2026 z Printers Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band 8 kV(contact discharge) z Communication systems • Mounting Position : Any MIL STD 883E - Method 3015-7 Class 3 • Weight : Approximated 0.011 gram 25 kV HBM (Human Body Model) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Functional diagram For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 12 20 VRRM Maximum Recurrent Peak Reverse Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) SOT-23 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Absolute Ratings (Tamb=25°C ) Storage Temperature Range Symbol PPP 1.0 30 RΘJA Typical Thermal Resistance (Note 2) -55 to +125 F temperature Vfor ℃ -55 to +150 - 65 to +175 Value Units 2600.85 °C -55 to +155 °C -40 to +125 °C 150 °C IEC61000-4-2 air discharge 15 kV IEC61000-4-2 contact discharge 8 TL Maximum lead T Storage Temperature RangeIR @T A=125℃ Top A (tp = 8/20μs) 350 FM1100-MHW FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH soldering Rated DCstg Blocking Voltage NOTES: TSTG Maximum Average Reverse Current at @T A=25℃ A 40 120 Parameter Peak Pulse Power CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Operating Temperature Range Tj at 1 MHZ Maximum junction 1- Measured and applied reverse voltagetemperature of 4.0 VDC. 13 30 during0.50 10s 0.70 0.5 10 0.9 0.92 U V m 2- Thermal Resistance From Junction to Ambient 2014-01 Electrostatic discharge VPP 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SOTxxC THRU FM1200-M+ Dual Transient Voltage Suppressors Array for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Electrical Parameter • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Symbol Parameter capability, low forward voltage drop. • High current Maximum Reverse Peak Pulse IPP surge capability. • High Current • Guardring for overvoltage protection. V Clamping Voltage @ IPP C high-speed switching. • Ultra epitaxial planar chip, metal silicon junction. •VSilicon Working Peak Reverse Voltage RWM • Lead-free parts meet environmental standards of Maximum MIL-STD-19500 /228 Reverse Leakage Current IR @ V RoHS product for packing code suffix "G" RWM • Halogen free product for packing code suffix "H" IT Test Current 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data VBR Breakdown Voltage @ IT • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Electrical Characteristics • Polarity : Indicated by cathode band VBR • Mounting Position : Any : Approximated Part• Weight Numbers Min. 0.011 gram Typ. Dimensions in inches and (millimeters) IT Max. VRWM IR Ratings at 25℃ ambient temperature unless otherwise specified. Single SOT05C phase half wave, 60Hz, load. 7.4 6.0resistive of inductive 6.7 For capacitive load, derate current by 20% 13.3 SOT12C 1).8/20 waveform Marking Code 14.0 RATINGS used. (see fig2.) Typ. 0v bias MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V V V mA V C 14.7 µA pF 1 5.0 1 30 1 12.0 1 25 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Typical Characteristics Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 IR 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Fig1. Peak Pulse Power VS Pulse Time 2014-01 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SOTxxC THRU FM1200-M+ Dual Transient Voltage Suppressors Array for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) Pulse Fig3.Power Derating Curve 0.024(0.6) UL94-V0 ratedWaveform flame retardant • Epoxy : Fig2. Application Note plastic, SOD-123H • Case : Molded 0.031(0.8) Typ. 0.031(0.8) Typ. , •Electrostatic Terminals :Plated terminals, solderable per MIL-STD-750 discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Method 2026 Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band transient to a low enough level such that damage to the protected semiconductor is prevented. • Mounting Position : Any Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel • Weight : Approximated 0.011 gram protection elements, connected between the signal line to ground. As the transient rises above the operating MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground. Ratings at 25℃ ambient temperature unless otherwise specified. The SOTxxC array is the ideal board evel protection Single phase half wave, 60Hz, resistive of inductive load. The tiny package allows design flexibility For capacitive load,SOT-23 derate current by 20% of ESD sensitive semiconductor components. in the design of high density boards where the space saving is at a premium. the routing and contributes to hardening against ESD. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGSThis enables to shorten Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2014-01 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SOTxxC THRU FM1200-M+ Dual Transient Voltage Suppressors Array for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 mechanical data loss, high efficiency. • Low power 0.146(3.7) 0.130(3.3) .106(2.70) Halogen free product for packing code suffix "H" 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .080(2.04) .086(2.20) Mechanical data 0.071(1.8) 0.056(1.4) .110(2.80) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .004(0.10)MAX. Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO .020(0.50) .013(0.35) IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 40 120 Dimensions in inches (millimeters) -55 and to +125 TJ Operating Temperature Range Storage Temperature Range A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Marking SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: Type number @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. SOT05C 2- Thermal Resistance From Junction to Ambient 2014-01 SOT12 C 2012-06 0.50 0.70 0.85 0.5 IR Marking code 0.9 0.92 V 10 m 05C/2AC 12C/4AC WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SOTxxC Dual Transient Voltage Suppressors Array for ESD Protection Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014-01 WILLAS ELECTRONIC CORP.