WILLAS FM120-M+ SESD099-04BT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. •DESCRIPTIONS • High current capability, low forward voltage drop. SESD099-04BT1 is a 4-channel ultra low capacitance rail High surge capability. •The protection diodes array. Each channel consists of ESD for Guardring overvoltage protection. •clamp high-speed switching. •a Ultra that steer positive or negative ESD current pair of ESD diodes • Silicon epitaxial planar chip, metal silicon junction. positive negative rail. standards A zener diode to either theparts meetorenvironmental of is integrated • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 6 /228 the positive and negative supply rails. inMIL-STD-19500 to the array between 1 • RoHS product for packing code suffix "G" 2 In the typical applications, the negative rail pin (assigned as GND) Halogen free product for packing code suffix "H" is connected with system Mechanical data ground. The Positive ESD current is 5 4 3 SOT-363 the ground through an ESD diode and Zener diode and Epoxy to : UL94-V0 rated flame retardant •steered positive ESDplastic, voltageSOD-123H is clamped to the zener voltage. Case : Molded •the , SESD099-04BT1 is idea to protectper high speed data lines. •The Terminals :Plated terminals, solderable MIL-STD-750 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method type2026 is provided for easy PCB layout. Three package • Polarity : Indicated by cathode band • Mounting Position : Any •FEATURES Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) APPLICATIONS * 4 channels of ESD protection; * HDMI / DVI ports; MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Provides ESD protectionunless to IEC61000-4-2 level 4 Ratings at*25℃ ambient temperature otherwise specified. Single phase-half wave, 60Hz, resistive of inductive load. ±15kV air discharge For capacitive load, derate current by 20% * Display Port interface; * 10M / 100M / 1G Ethernet; - ±8kV contact discharge; RATINGS * USB 2.0 interface; SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH * Channel I/O to GND capacitance: 0.9pF(Max) Marking Code * VGA interface 12 * Channel I/O to I/O capacitance: 0.45pF(Max) 20 Maximum Recurrent Peak Reverse Voltage VRRM 13 30 14 40 * Set-top box; 50 60 15 16 115 150 120 200 V VRMS 14 21 28 * Flat Monitors56 / TVs; 35 panel42 70 105 140 V * Low operating Maximum DC Blocking Voltagevoltage; VDC 20 30 40 * PC book 50 / Note60 100 150 200 V IO * Optimized for half easy high speed data lines PCB layout; Peak Forward Surge Currentpackage 8.3 ms single sine-wave IFSM available RΘJA Typical Junction Capacitance 1) J RoHS product(Note for packing code suffixC”G” Operating Temperature TJ suffix “H” Halogen Range free product for packing code Storage Temperature Range TSTG Sensitivity Level 1 * Moisture package * Pb-Free Typical Thermal Resistance (Note 2)is CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ NOTES: IR @T A=125℃ Package SESD099-04BT1 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U MaximumORDERING Forward VoltageINFORMATION at 1.0A DC Rated DC Blocking Voltage Part No. 80 1.0 30 * RoHS superimposed on ratedcompliant. load (JEDEC method) 10 100 * Low clamping voltage; Maximum RMS Voltage Maximum Average Forward Rectified Current * Improved zener structure; 18 80 SOT-363 0.50 0.70 0.85 0.9 0.5 0.92 V Marking Material10 Shipping C96 Halogen 3000Tape&Reel m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04BT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features Batch process design, excellent power dissipation offers PIN• CONFIGURATION better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOT-363 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , ABSOLUTE RATINGS • TerminalsMAXIMUM :Plated terminals, solderable per MIL-STD-750 Method 2026 Characteristics 0.031(0.8) Typ. Symbol Ratings Unit 150 W IPP 5 A ESD per IEC 61000-4-2(Air) VESD1 ±15kV kV ESD per IEC 61000-4-2(Contact) VESD2 ±8kV kV Topr -55 ~ +125 °C Tstg -55 ~ +150 °C • Polarity : Indicated by cathode band Peak Pulse Power(8/20μs) • Mounting Position : Any Peak Pulse Current(8/20μs) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) PPP MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive Operating Temperature Range of inductive load. For capacitive load, derate current by 20% Storage Temperature Range RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 21 28 35 42 56 70 105 140 Vo 20 30 VTest DC Conditions 40 50 Typ.60 80 Max. 100 150 200 Vo Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 12 20 ELECTRICAL CHARACTERISTICS(Tamb=25°C)14 Maximum DC Blocking Voltage Characteristics Symbol Reverse Working superimposed on rated load (JEDEC method) Reverse Breakdown VBR Typical Thermal Resistance (Note 2) Voltage Typical Junction Capacitance (Note 1) Reverse Leakage Operating Temperature Range IR Storage Temperature Range Current CHARACTERISTICS Positive Clamping Maximum Forward Voltage at 1.0A DC Voltage Rated DC Blocking Voltage Negative Clamping NOTES: Voltage t =1mA; RΘJA AnyCJI/O pin to GND TSTG Any I/O Between Channel Junction Capacitance Between I/O And GND 2012-06 2012-09 A V A 1 ℃ V P -55 to +150 - 65 to +175 ℃ μA ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Positive pulse; VF 0.50 8.5 0.70 VC2 IR Negative pulse; CJ1 CJ2 12.0 0.85 V 0.5 Any I/O pin to GND 0.9 0.92 Vo mA 10 @T A=125℃ I =1A, t =8/20μS; PP P 2- Thermal Resistance From Junction to Ambient Junction Capacitance pin to GND 5 40 120 6 -55 to +125 VRWM TJ =5V, T=25°C; 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Any 1.0 30 Unit IPP=1A, tP=8/20Μs; VC1 Maximum Average Reverse Current at @T A=25℃ Min. IO VRWM Any I/O pin to GND Peak Forward Surge Current 8.3 ms single half sine-wave Voltage IFSM Maximum Average Forward Rectified Current 0.031(0.8) Typ. 1.8 V I/O pin to GND VR=0V, f=1MHz; Between I/O pins VR=0V, f=1MHz; Any I/O pin to GND 0.35 0.45 pF 0.9 pF WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04BT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H TYPICAL ELECTRICAL CHARACTERISTICS surface mounted application in order to CURVE • Low profile optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04BT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V PACKAGE 4-CHANNEL LOW CAPACITANCE ESDSOD-123+ PROTECTION DIODES ARRAY Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. TYPICAL ELECTRICAL CHARACTERISTICS CURVE • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04BT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-363 • Low power loss, high efficiency. • High current capability, low forward voltage drop. .087(2.20) • High surge capability. • Guardring for overvoltage protection. .071(1.80) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .054(1.35) .045(1.15) .004(0.10)MIN. optimize board space. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .030(0.75) .071(1.80) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) Method.021(0.55) 2026 • Polarity : Indicated by cathode band Any • Mounting Position :.056(1.40) • Weight : Approximated 0.011 gram .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM Maximum Recurrent Peak Reverse Voltage VRMS .016(0.40) .004(0.10)VDC Maximum RMS Voltage Maximum DC Blocking Voltage 12 20 14 20 IO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 40 120 CJ Dimensions in inches and-55 (millimeters) to +125 TJ Storage Temperature Range CHARACTERISTICS - 65 to +175 0.5 mm (min) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.65 mm 0.65 mm Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage -55 to +150 TSTG NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.4 mm (min) 15 50 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range 14 40 IFSM Peak Forward Surge Current 8.3 ms single half sine-wave Typical Thermal Resistance (Note 2) 13 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 0.9 0.92 10 m 1.9 mm 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD099-04BT1 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Ordering Information: Device PN SESD099‐04BT1 ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09 WILLAS ELECTRONIC CORP.