WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H RoHSsurface product for packing codeinsuffix "G" mounted application order to • Lowƽprofile optimize board space. Halogen free product for packing code . suffix "H" loss, high efficiency. • Low power Moisture Sensitivity Level 1 • High current capability, low forward voltage drop. MARKING High surge capability.AND ORDERING INFORMATION • DEVICE for protection. Package • Guardring Device overvoltage Marking Shipping • Ultra high-speed switching. MMBTA42LT1 1Dmetal silicon SOT-23 epitaxial planar chip, junction. 3000/Tape&Reel • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 MMBTA43LT1 /228 M1E • RoHS product for packing code suffix "G" SOT-23 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 3000/Tape&Reel SOT–23 Halogen freeRATINGS product for packing code suffix "H" MAXIMUM Mechanical data Value Rating rated flame retardant Symbol MMBTA42 MMBTA43 • Epoxy : UL94-V0 Collector–Emitter Voltage 300 200 : Molded plastic, SOD-123H V CEO • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector–Base Voltage V CBO 300 200 Method 2026 Emitter–Base Voltage V EBO Polarity : Indicated by cathode band Collector Current — Continuous IC Mounting Position : Any 0.012(0.3) Typ. 6.0 • • CHARACTERISTICS • THERMAL Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 3 Unit Vdc COLLECTOR 0.031(0.8) Typ. 0.031(0.8) Typ. Vdc 6.0 1 BASE Vdc 500 Dimensions in inches and (millimeters) 2 EMITTER mAdc Characteristic Symbol Max Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Totalambient Device Dissipation 5 Board, (1) specified. Ratings at 25℃ temperatureFR– unless otherwise 225 mW PD T A = 25°C Single phase half wave, 60Hz, resistive of inductive load. Derate 1.8 mW/°C For capacitive load, above derate25°C current by 20% Thermal Resistance, Junction to Ambient R θJA 556 °C/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Total Device Dissipation 300 Marking Code 12P D 13 14 15mW 16 18 10 115 120 Alumina Substrate, (2) TA = 25°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Derate above 25°C 2.4 mW/°C Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS Thermal Resistance, Junction to Ambient R θJA 417 °C/W Volts Maximum DC Junction Blocking Voltage 20J , T stg 30 –55 to40+150 50 °C 60 80 100 150 200 VDC and Storage Temperature T Maximum Average Forward Rectified Current IO ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Peak Forward Surge Current 8.3 ms single half sine-wave Characteristic superimposed on rated load (JEDEC method) OFF CHARACTERISTICS Typical Thermal Resistance (Note 2) IFSM RΘJA Typical Junction Capacitance (Note 1) Collector–Emitter Breakdown Voltage(3) CJ Operating Temperature Range I B = 0) (I C = 1.0 mAdc, TJ MMBTA42 Storage Temperature Range TSTG MMBTA43 Collector–Base Breakdown Voltage CHARACTERISTICS µAdc, I E= 0) (I C= 100 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Emitter–Base Breakdown Voltage Rated DC Blocking Voltage (I E= 100 µAdc, I C= 0) @T A=125℃ ( V CB= 160Vdc, I E= 0) 2- Thermal Resistance From Junction to Ambient 40 120 V (BR)CEO -55 to +125 IR V (BR)EBO 300 200 Unit Amps ℃/W Vdc PF -55 to +150 — ℃ - 65 to +175 — 6.0 0.5 — 10 ℃ MMBTA43 Emitter Cutoff Current Vdc mAmp µAdc I CBO 200Vdc, I E= 0) voltage of 4.0 VDC. MMBTA42 ( V CB= and 1- Measured at 1 MHZ applied reverse Min Amps V (BR)CBO Vdc FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH300 MMBTA42 — Volts 0.9 0.92 VF 0.50 0.70 — 0.85 MMBTA43 200 Collector Cutoff Current NOTES: Symbol 1.0 Max 30 — 0.1 — 0.1 µAdc I EBO ( V EB= 6.0Vdc, I C= 0) MMBTA42 — 0.1 ( V EB= 4.0Vdc, I C= 0) MMBTA43 — 0.1 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) profile surface mounted application in order to • Low optimize board space.Characteristic Symbol loss, high efficiency. • Low ONpower CHARACTERISTICS (3) capability, • High current DC Current Gain low forward voltage drop. capability. • High surge (I C = 1.0 mAdc, V CE = 10 Vdc) Both Types for overvoltage protection. • Guardring (I C = 10 mAdc, V CE = 10 Vdc) Both Types • Ultra high-speed switching. MMBTA42 • Silicon epitaxial planar chip, metal silicon junction. (I C = 30 mAdc, V CE = 10 Vdc) MMBTA43 parts meet environmental standards of • Lead-free Min Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. hFE –– 25 40 40 40 — — — — — — 0.5 0.5 — 0.9 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Saturation Voltage product for packing code suffix "G" • RoHS Collector–Emitter VCE(sat) (I Cfree = 20product mAdc, Ifor 2.0 mAdc) Halogen code suffix "H" B =packing Mechanical data 0.040(1.0) Saturation : UL94-V0 rated flameVoltage retardant • EpoxyBase–Emitter (I C = 20 mAdc, I B= 2.0 mAdc) • Case : Molded plastic, SOD-123H , SMALL–SIGNAL CHARACTERISTICS • Terminals :Plated terminals, solderable per MIL-STD-750 • • • Vdc MMBTA42 MMBTA43 Current –Gain–Bandwidth Product Method 2026 = 20 Vdc, I = 10mA, f = 100 MHz) (V CE C Polarity : Indicated by cathode band Collector – Base Capacitance Mounting Position : Any (V CB= 20 Vdc, I E = 0, f = 1.0 MHz) Weight : Approximated 0.011 gram V 0.024(0.6) Vdc BE(sat) 0.031(0.8) Typ. 0.031(0.8) Typ. fT 50 — MHz Dimensions in inches and (millimeters) C cb pF MMBTA42 MMBTA43 — — 3.0 4.0 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile 200 optimize board V =space. 10Vdc CE • Low power loss, high efficiency. forward voltage drop. • High current capability,Tlow = 125°C J 100 capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. 25°C silicon junction. • Silicon epitaxial planar chip, metal 50 • Lead-free parts meet environmental standards of hFE , DC CURRENT GAIN 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 55°C "G" • RoHS product for packing code–suffix 30 Halogen free product for packing code suffix "H" Mechanical data 20 1.0 2.0 retardant 3.0 5.0 7.0 10 20 rated flame • Epoxy : UL94-V0 • Case : Molded plastic, SOD-123H I C , COLLECTOR CURRENT (mA)Typ. 0.031(0.8) , • Terminals :Plated terminals, solderable per MIL-STD-750 Figure 8. DC Current Gain 30 0.040(1.0) 70 0.024(0.6) 50 100 0.031(0.8) Typ. Method 2026 100 20 10 100 C eb Ratings at 25℃ ambient temperature unless otherwise specified. Single phase5.0half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 2.0 70 50 0.2 Maximum RMS Voltage 0.5 1.0 2.0 12 20 VRRM 5.0 10 20 VRMS 50 100 14 Maximum DC Blocking Voltage 20 DC V R, REVERSE VOLTAGEV(VOLTS) 13 30 200 30 f = 20 MHz 20 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.4 Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC V, VOLTAGE (VOLTS) 1.2 1.0 30 15 50 28 2.0 16 60 Volts 105 140 Volts 60 80 100 150 I C50 , COLLECTOR CURRENT (mA) 1.0 Figure 3. Current–Gain — Bandwidth Product 30 200 Volts 3.0 35 5.0 7.0 -55 to +125 TJ 10 10 100 20 56 40 120 T J = 25°C CJ 18 80 42 RΘJA 30 70 115 150 50 70 100 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG 0.8 ℃ V BE(sat) @ I C /I B = 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.6 VF @T A=125℃ V BE(on) @ 0.50 V CE = 10 V 0.70 0.85 0.5 IR 5.0 0.9 0.92 Volts 10 mAmps 0.2 V CE(sat) @ I C /I B = 10 NOTES: 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.0 2- Thermal Resistance From Junction to Ambient 14 10 40 1.0 40 IFSM Maximum Average Reverse Current at @T A=25℃ 0.4 120 200 21 Maximum Average Forward Rectified Current IO Figure 2. Capacitance Rated DC Blocking Voltage T J = 25°C V CE = 20 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT C cb 1.0 Maximum Recurrent Peak Reverse Voltage Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) • Polarity : Indicated by cathode band 50 Position : Any • Mounting • Weight : Approximated 0.011 gram 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY High Voltage Transistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) of • Lead-free parts meet environmental standards .106(2.70) 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .080(2.04) 0.040(1.0) 0.024(0.6) .083(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Halogen free product for packing code suffix "H" Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .004(0.10)MAX. VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .020(0.50) IFSM .012(0.30) RΘJA Typical Thermal Resistance (Note 2) .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 40 120 Dimensions in inches-55and (millimeters) to +125 TJ CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor Pb Free Product SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. Part Number G(1)‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Ultra high-speed switching. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCand do vary in different applications and actual performance may vary over time. Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ of WILLAS. Customers using or selling WILLAS components for use in IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.