WILLAS FM120-M+ THRU SE8810 FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER MOSFETS RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. N-Channel MOSFET capability, low forward voltage drop. • High current • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. DESCRIPTION • Silicon epitaxial planar chip, metal silicon junction. Lead-free partsuse meet environmental standards of •The SE8810 advanced trench technology to provide excellent 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 1. GATE Mechanical data 2. SOURCE and low gate charge. It is ESD protected. This device is suitable RDS(ON) Halogen free product for packing code suffix "H" for use as a uni-directional or bi-directional load switch,facilitated by its • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded common-drain configuration. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 3. DRAIN ina ry 0.031(0.8) Typ. Method 2026 MARKING: 8810 by cathode band • Polarity : Indicated • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Gate-source voltage Marking Code Value Unit VDS 20 V SYMBOL FM120-MH FM130-MH FM1200-MH UNIT VGS FM140-MH FM150-MH FM160-MH ±12 FM180-MH FM1100-MH FM1150-MH V VRRM 12 20 13 ID 30 14 40 15 50 16 607 18 80 10 100 115 A 150 120 200 Volts Maximum RMSDrain Voltage Pulsed Current VRMS 14 21 IDM 28 35 42 30 56 70 105 A 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Pr el Maximum Recurrent Peak Reverse Voltage Continuous drain current Power dissipation* IO Maximum Average Forward Rectified Current Symbol im Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Single phase half wave, 60Hz, resistive of inductive load. Drain-source For capacitive load, voltage derate current by 20% Thermal resistance from junction to ambient Peak Forward Surge Current 8.3 ms single half sine-wave Junction temperature superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Storage temperature CJ Typical Junction Capacitance (Note 1) PD 0.3 1.0 RθJA 417 TJ 150 40 120 -55~ +150 -55 to +125 * Repetitive rating : Pulse width limited by junction temperature. Operating Temperature Range TJ Storage Temperature Range Amps ℃/W 30 Tstg W Amps ℃ ℃/W ℃ PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE8810 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ELECTRICAL (T =25℃ unless otherwise noted) surface mounted applicationain order to • Low profileCHARACTERISTICS SOD-123H optimize board space. Parameter Symbol Test Condition loss, high efficiency. • Low power • High current capability, low forward voltage drop. STATIC PARAMETERS • High surge capability. for overvoltage • Guardring Drain-source breakdown voltageprotection.V (BR) DSS VGS = 0V, ID =250µA • Ultra high-speed switching. Zero gate voltage drain current IDSS VDS =16V,VGS = 0V junction. • Silicon epitaxial planar chip, metal silicon • Lead-free parts meet environmental standards of VGS =±4.5V, VDS = 0V MIL-STD-19500 /228 Gate-body leakage current Min0.146(3.7)Typ 0.130(3.3) 20 V 0.071(1.8) 0.056(1.4) VGS =±8V, VDS = 0V Halogen free product for packing code suffix "H" Gate threshold voltage (note 1) VGS(th) Mechanical data VDS =VGS, ID =250µA Forward tranconductance (note 1) • Polarity : Indicated by cathode band Diode forward voltage(note 1) • Mounting Position : Any SWITCHING • WeightPARAMETERS(note : Approximated 0.011 2) gram Turn-on delay time gFS VSD tr Q Vgs RRM Maximum RMS Charge Voltage Gate-Drain VRMS Q gd VDC 20 mΩ mΩ 0.031(0.8) Typ. 35 mΩ S 1 V 6.5 ns 12.5 ns 51.5 ns 16 ns 115 nC 150 120 200 Volts 56 4 70 105 nC 140 Volts 100 150 200 Volts 14 21 28 35 42 20 30 40 50 60 IFSM Guaranteed by design, not subject to production testing. CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 80 1.0 30 superimposed on rated load (JEDEC method) RΘJA nC 10 100 Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. Typical Thermal Resistance (Note 2) 20 18 80 1 Peak Forward Surge Current 8.3 ms single half sine-wave 2. V 16 60 IO Maximum Average Forward Rectified Current 1. 12 13 14 15 V20 DS =10V,V 30GS =4.5V,I 40 D =7A 50 Pr el Qg Gate-Source Charge Maximum Recurrent Peak Reverse Voltage Notes : 1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum DC Blocking Voltage V =5V,V =10V, tf Total Gate Charge Marking Code µA IS=1A, VGS = 0V GS DS Ratings at 25℃ ambient temperature unless otherwise specified. R =1.35Ω,R L GEN=3Ω Turn-off delay d(off) Single phase halftime wave, 60Hz, resistive of inductive tload. For capacitive load, derate current by 20% RATINGS ±10 Dimensions in inches and (millimeters) td(on) Turn-off fall time µA 9 VDS =5V, ID =7A im ±1 26 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Turn-on rise time µA 0.040(1.0) 0.024(0.6) ina ry Method 2026 1 0.4 VGS =10V, ID =7A • Epoxy : UL94-V0 rated flame retardant Drain-source 1) RDS(on) VGS =2.5V, ID =5.5A Molded plastic,(note SOD-123H • Case : on-resistance , VGS =1.8V, ID =5A • Terminals :Plated terminals, solderable per MIL-STD-750 Unit 0.012(0.3) Typ. IGSS • RoHS product for packing code suffix "G" Max 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE8810 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Outline Drawing SOT-23 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) .110(2.80) .063(1.60) .047(1.20) .122(3.10) .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.012(0.3) Typ. .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .080(2.04) Marking Code .070(1.78) Maximum Recurrent Peak Reverse Voltage .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM 12 20 13 30 14 40 15 50 16 60 18 80 VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .083(2.10) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 10 115 .003(0.08) 100 150 120 200 Volts 105 140 Volts 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.92 0.5 Volts mAmps 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.D 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE8810 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) (2) capability. • High surge SE8810 ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Packing code, Tape & Reel Packing Ultra high-speed switching. •Note: (1) epitaxial planar chip, metal silicon junction. • Silicon(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Codefor any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Amps Maximum Average Forward Rectified Current IO 1.0 Peak ForwardWILLAS does not assume any liability arising out of the application or Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) use of any product or circuit. ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ WILLAS products are not designed, intended or authorized for use in medical, Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% Storage Temperature Range TSTG - 65 to +175 ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.